المؤلفون: Muhea, Wondwosen Eshetu

المساهمون: University/Department: Universitat Rovira i Virgili. Departament d'Enginyeria Electrònica, Elèctrica i Automàtica

Thesis Advisors: Iñiguez Nicolau, Benjamin

المصدر: TDX (Tesis Doctorals en Xarxa)

مصطلحات موضوعية: Modelatge compacte, TFT, HEMTs, Soroll de Flicker, Modelo Compacto, Ruido de Flicker, Compact Modeling, Flicker Noise, Enginyeria i arquitectura

Time: 621.3

وصف الملف: application/pdf

URL الوصول: http://hdl.handle.net/10803/668270

المؤلفون: Hao Lu, Meng Zhang, Ling Yang, Bin Hou, Rafael Perez Martinez, Minhan Mi, Jiale Du, Longge Deng, Mei Wu, Srabanti Chowdhury, Xiaohua Ma, Yue Hao

المصدر: Fundamental Research, Vol 5, Iss 1, Pp 315-331 (2025)

مصطلحات موضوعية: 5G, Gallium nitride, High frequency, High linearity, GaN-on-Si HEMTs, Science (General), Q1-390

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2667325823003023; https://doaj.org/toc/2667-3258

URL الوصول: https://doaj.org/article/97d8398f5d614835b83bf5a23999bfbd

المؤلفون: Yicong Dong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, Shaloo Rakheja

المصدر: IEEE Journal of the Electron Devices Society, Vol 13, Pp 54-65 (2025)

مصطلحات موضوعية: Gallium nitride, HEMTs, thermodynamic transport, TCAD simulations, drain-current transients, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10836823/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/a48b097ae408438d866e8d899287ebcd

المؤلفون: Li, Junjie, 1995, Bergsten, Johan, 1988, Pourkabirian, Arsalan, 1983, Grahn, Jan, 1962

المصدر: IEEE Journal of the Electron Devices Society. 12:243-248

مصطلحات موضوعية: low-noise amplifier (LNA), HEMTs, Noise measurement, InP high-electronmobility transistor (HEMT), indium channel, Gain, Drain noise temperature, Indium phosphide, Logic gates, III-V semiconductor materials, Indium, qubit amplification

وصف الملف: electronic

URL الوصول: https://research.chalmers.se/publication/540756
https://research.chalmers.se/publication/540756/file/540756_Fulltext.pdf

المؤلفون: Marcello Cioni, Giovanni Giorgino, Alessandro Chini, Antonino Parisi, Giacomo Cappellini, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Ferdinando Iucolano

المصدر: Electronic Materials, Vol 5, Iss 3, Pp 132-144 (2024)

مصطلحات موضوعية: GaN, HEMTs, hot-electrons, VTH drift, RON-degradation, Instruments and machines, QA71-90

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2673-3978/5/3/9; https://doaj.org/toc/2673-3978

URL الوصول: https://doaj.org/article/0f17b224cb82418483bf3855ee71d1b7

المؤلفون: Junfeng Yu, Jihong Ding, Tao Wang, Yukai Huang, Wenzhang Du, Jiao Liang, Hongping Ma, Qingchun Zhang, Liang Li, Wei Huang, Wei Zhang

المصدر: Nanomaterials, Vol 14, Iss 24, p 1984 (2024)

مصطلحات موضوعية: DCFL inverters, trapping mechanism, p-GaN HEMTs, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/14/24/1984; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/aac7f574561443429b3758b793c200a7

المؤلفون: Jong-Uk Kim, Do-Yeon Park, Byeong-Jun Park, Sung-Ho Hahm

المصدر: Technologies, Vol 12, Iss 12, p 262 (2024)

مصطلحات موضوعية: superjunction, current aperture vertical electron transistor (CAVET), vertical HEMTs, breakdown voltage (BV), reverse transfer capacitance (Crss), Technology

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2227-7080/12/12/262; https://doaj.org/toc/2227-7080

URL الوصول: https://doaj.org/article/f6e0fdeb211041bbb41ee48f7f718b63

المؤلفون: Íñiguez-De-La-Torre, Ignacio, Paz-Martínez, Gaudencio, García-Sánchez, Sergio, Artillan, Philippe, González, Tomás, Mateos, Javier

المساهمون: Universidad de Salamanca España = University of Salamanca Spain, Departamento de Fisica Aplicada Salamanca, Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes (CROMA), Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)

المصدر: European Microwave Conference (EuMC) in European Microwave Week (EuMW) ; https://hal.science/hal-04712801 ; European Microwave Conference (EuMC) in European Microwave Week (EuMW), IEEE, 2024, ⟨10.23919/EuMIC61603.2024.10732260⟩

مصطلحات موضوعية: Small Signal Equivalent-circuit, Zero-bias detector, GaN high electron mobility transistors (HEMTs) Millimeter wave (mmWave) detection Monte Carlo simulations Small Signal Equivalent-circuit Zero-bias detector, GaN high electron mobility transistors (HEMTs), Millimeter wave (mmWave) detection, Monte Carlo simulations, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

الاتاحة: https://hal.science/hal-04712801
https://hal.science/hal-04712801v1/document
https://hal.science/hal-04712801v1/file/EuMW2024%20-%20Analysis%20of%20mm-Wave%20Detection%20with%20AlGaNGaN.pdf
https://doi.org/10.23919/EuMIC61603.2024.10732260

المؤلفون: Chia Hao Yu, Wei Hsiang Chiang, Yi-Ho Chen, Seiji Samukawa, Dong Sing Wuu, Chin-Han Chung, Ching-Lien Hsiao, Ray Hua Horng

المصدر: Materials Today Advances, Vol 23, Iss , Pp 100519- (2024)

مصطلحات موضوعية: GaN HEMTs, Gate recess, Neutral beam etching, Multi-frequency C–V, Interface defects, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2590049824000560; https://doaj.org/toc/2590-0498

URL الوصول: https://doaj.org/article/f68c5c76581d4074bd8a0755f3da6f39

المؤلفون: Hae-Chan Park, Myeong-Jun Cha, Seon-Ho Jeon, Rae-Young Kim

المصدر: IEEE Access, Vol 12, Pp 7540-7550 (2024)

مصطلحات موضوعية: Wide bandgap (WBG), device under test (DUT), SiC MOSFETs, GaN HEMTs, double pulse test (DPT), fault under load (FUL), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10385085/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/5ef7d0c3da7e402393b7ba4cb6c12e2d

المؤلفون: Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Min Xu

المصدر: IEEE Access, Vol 12, Pp 16089-16094 (2024)

مصطلحات موضوعية: AlGaN/GaN MIS-HEMTs, border traps, current collapse, plasma alternately treated gate dielectric, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10375390/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/04e1f1e0df6d4795934cd79e7a46f822

المؤلفون: Yuanting Lyu, Zhichun Li, Ao Zhang, Jianjun Gao

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 113-120 (2024)

مصطلحات موضوعية: Device modeling, HEMTs, correlation noise matrix, noise parameters, noise measurement, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10418161/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/7890ff518e3a4b1995e715862bf2eeb4

المؤلفون: Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 268-274 (2024)

مصطلحات موضوعية: AlGaN/GaN HEMTs on SiC, Cu metallization, minimum noise figure, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10478115/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/82a72b4f519240c1b0f2654aa4860ff0

المؤلفون: Ken Kikuchi, Antonio Raffo, Valeria Vadala, Gianni Bosi, Giorgio Vannini, Hiroshi Yamamoto

المصدر: IEEE Access, Vol 12, Pp 72721-72729 (2024)

مصطلحات موضوعية: Electromagnetic simulations, GaN HEMTs, microwave semiconductor devices, microwave measurements, on-wafer measurements, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10534794/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/7387aa710ea848328616e4b848920203

المؤلفون: Fan Li, Shiqiang Wu, Ang Li, Yuhao Zhu, Miao Cui, Jiangmin Gu, Ping Zhang, Yinchao Zhao, Huiqing Wen, Wen Liu

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 457-463 (2024)

مصطلحات موضوعية: GaN HEMTs, ASM model, hydrogen plasma treatment, DCFL circuit, capacitance, dynamic performance, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10543269/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/4bef0561b2914d218ada4b5452e27080

المؤلفون: Myeongsu Chae, Ho-Young Cha, Hyungtak Kim

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 581-586 (2024)

مصطلحات موضوعية: p-GaN gate HEMTs, threshold voltage instability, positive bias temperature instability (PBTI), temperature dependence, trapping, de-trapping, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10620298/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/ab1ad5f573de4b1e8a372aaca85675e0

المؤلفون: Rafael Perez Martinez, Masaya Iwamoto, Kelly Woo, Zhengliang Bian, Roberto Tinti, Stephen Boyd, Srabanti Chowdhury

المصدر: IEEE Access, Vol 12, Pp 123224-123235 (2024)

مصطلحات موضوعية: ASM-HEMT, compact model, derivative-free optimization, device modeling, diamond Schottky diode, GaN HEMTs, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10662920/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/0dcf7a2591e947b6bcf6640c37b61d9e

المؤلفون: Qiang Chen, Y. Q. Chen, Chang Liu, Zhiyuan He, Yuan Chen, K. W. Geng, Y. J. He, W. Y. Chen

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 698-702 (2024)

مصطلحات موضوعية: Low temperature, AlGaN/GaN HEMTs, LFN, traps, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10643171/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/e246a3fb2ead4f2f88be27115a184085

المؤلفون: Ahmad Khusro, Saddam Husain, Mohammad S. Hashmi

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 723-737 (2024)

مصطلحات موضوعية: GaN HEMTs, artificial intelligence, ANFIS, behavioral device modeling, fuzzy logic, neural networks, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10680392/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/c3c6bd73d51e4d78b39e7fe3034c7dba

المؤلفون: Hussain Sayed, Harish S. Krishnamoorthy

المصدر: IEEE Open Journal of Power Electronics, Vol 5, Pp 1720-1734 (2024)

مصطلحات موضوعية: E-mode GaN HEMTs, reliability assessment, accelerated thermal cycling, junction temperature estimation, thermal modeling, and $R_{\rm{DSon}}$ thermal coefficient, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10717423/; https://doaj.org/toc/2644-1314

URL الوصول: https://doaj.org/article/e2cf1c46bea6488fa87c0f6c6e7095b3