المؤلفون: Povolný V., Laposa A., Kroutil J., Voves J., Ashcheulov P., Hazdra P.

مصطلحات موضوعية: gas sensor array, inkjet, IPL, microheater, PET

وصف الملف: application/pdf

Relation: NANOCON 2023 Conference Proceedings; info:eu-repo/grantAgreement/Czech Science Foundation/GA/GA22-04533S/CZ/Printed heterogeneous gas sensor arrays with enhanced sensitivity and selectivity/; Nanocon 2023; V3S-374937; POVOLNÝ, V., et al. EVALUATION OF INKJET PRINTED HEATERS ARRAY FOR CHEMO-RESISTIVE GAS SENSOR. In: NANOCON 2023 Conference Proceedings. Nanocon 2023, Brno, 2023-10-18/2023-10-20. Ostrava: TANGER, 2024. p. 52-57. NANOCON Conference Proceedings - International Conference on Nanomaterials. ISSN 2694-930X. ISBN 978-80-88365-15-0. DOI 10.37904/nanocon.2023.4770.; 2694-930X (print); http://hdl.handle.net/10467/114356; 2-s2.0-85191146175

الاتاحة: http://hdl.handle.net/10467/114356
https://doi.org/10.37904/nanocon.2023.4770

المؤلفون: Hazdra, Pavel, Kracek, Jan, Lonsky, Tomas

مصطلحات موضوعية: Physics - Classical Physics

URL الوصول: http://arxiv.org/abs/1804.05876

المؤلفون: Povolný V., Laposa A., Kroutil J., Voves J., Davydova M., Hazdra P.

مصطلحات موضوعية: Inkjet, gas sensor array, PET, Polyimide, IPL

وصف الملف: application/pdf

Relation: NANOCON Conference Proceedings - International Conference on Nanomaterials; info:eu-repo/grantAgreement/Czech Science Foundation/GA/GA22-04533S/CZ/Printed heterogeneous gas sensor arrays with enhanced sensitivity and selectivity/; Nanocon 2022; V3S-366171; POVOLNÝ, V., et al. EVALUATION OF PRINTED INTERDIGITAL ELECTRODES ARRAY FOR CHEMO-RESISTIVE GAS SENSOR APPLICATION. In: NANOCON Conference Proceedings - International Conference on Nanomaterials. Nanocon 2022, Brno, 2022-10-19/2022-10-21. Ostrava: TANGER, 2022. p. 45-51. ISSN 2694-930X. ISBN 978-80-88365-09-9. DOI 10.37904/nanocon.2022.4588.; 2694-930X (print); http://hdl.handle.net/10467/108076; 2-s2.0-85151324190

الاتاحة: http://hdl.handle.net/10467/108076
https://doi.org/10.37904/nanocon.2022.4588

المؤلفون: Capek, Miloslav, Hazdra, Pavel, Masek, Michal, Losenicky, Vit

مصطلحات موضوعية: Physics - Classical Physics

URL الوصول: http://arxiv.org/abs/1509.02825

المؤلفون: Capek, Miloslav, Jelinek, Lukas, Hazdra, Pavel

مصطلحات موضوعية: Physics - Classical Physics

URL الوصول: http://arxiv.org/abs/1411.5821

المؤلفون: Jelinek, L., Capek, M., Hazdra, P., Eichler, J.

المصدر: IET Microwaves, Antennas & Propagation, Vol. 9, pp. 1096-1103, 2015

مصطلحات موضوعية: Physics - Classical Physics

URL الوصول: http://arxiv.org/abs/1311.1750

المؤلفون: Capek, M., Jelinek, L., Hazdra, P., Eichler, J.

المصدر: IEEE T. Antenn. Propag., Vol. 62, 2014

مصطلحات موضوعية: Physics - Classical Physics

URL الوصول: http://arxiv.org/abs/1309.6122

المؤلفون: Hazdra, P., Voves, J., Oswald, J., Kuldova, K., Hospodkova, A., Hulicius, E., Pangrac, J.

المصدر: Dans European Nano Systems Worshop - ENS 2006, Paris : France (2006)

مصطلحات موضوعية: Condensed Matter - Materials Science

URL الوصول: http://arxiv.org/abs/0708.1468

المؤلفون: Hazdra P., Laposa A., Šobáň Z., Alam M., Povolný V., Mortet V.

مصطلحات موضوعية: diamond, Schottky diode, vertical, boron doped

وصف الملف: application/pdf

Relation: Diamond and Related Materials; info:eu-repo/grantAgreement/Czech Science Foundation/GA/GA20-11140S/CZ/Essential Elements of Diamond Power Electronics/; info:eu-repo/grantAgreement/Ministry of Education, Youth and Sports/LM/90251/CZ/CzechNanoLab II - Výzkumná infrastruktura CzechNanoLab - LM2023051 (2023–2026)/CzechNanoLab II; V3S-375042; HAZDRA, P., et al. Vertical Schottky diode on (113) oriented homoepitaxial diamond. Diamond and Related Materials. 2024, 146 ISSN 1879-0062. DOI 10.1016/j.diamond.2024.111180. Available from: https://www.sciencedirect.com/science/article/pii/S0925963524003935; 0925-9635 (print); 1879-0062 (online); http://hdl.handle.net/10467/114396

الاتاحة: http://hdl.handle.net/10467/114396
https://doi.org/10.1016/j.diamond.2024.111180

المؤلفون: Hazdra P., Laposa A., Šobáň Z., Povolný V., Voves J., Lambert N., Taylor A., Mortet V.

مصطلحات موضوعية: diamond, Schottky diode, (113) orientation, molybdenum, platinum, ruthenium

وصف الملف: application/pdf

Relation: ISPS'23 PROCEEDINGS; info:eu-repo/grantAgreement/Czech Science Foundation/GA/GA20-11140S/CZ/Essential Elements of Diamond Power Electronics/; info:eu-repo/grantAgreement/Ministry of Education, Youth and Sports/LM/90110/CZ/CzechNanoLab - Výzkumná infrastruktura CzechNanoLab - LM2018110 (2020–2022)/CzechNanoLab; 16th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS; V3S-368435; HAZDRA, P., et al. Power Diode Structures Realized on (113) oriented Boron Doped Diamond. In: BENDA, V. and H.-J. SCHULZE, eds. ISPS'23 PROCEEDINGS. 16th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS, Praha, 2023-08-30/2023-09-01. PRaha: České centrum Institution of Engineering and Technology, 2023. p. 69-74. 1. vol. 1. ISBN 978-80-01-07198-4.; http://hdl.handle.net/10467/111867

الاتاحة: http://hdl.handle.net/10467/111867

المؤلفون: Hazdra P., Laposa A., Šobáň Z., Kroutil J., Lambert N., Povolný V., Taylor A., Mortet V.

مصطلحات موضوعية: boron doping, contacts, diamonds, ruthenium, Schottky diodes

وصف الملف: application/pdf

Relation: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE; info:eu-repo/grantAgreement/Czech Science Foundation/GA/GA20-11140S/CZ/Essential Elements of Diamond Power Electronics/; info:eu-repo/grantAgreement/Ministry of Education, Youth and Sports/LM/90251/CZ/CzechNanoLab II - Výzkumná infrastruktura CzechNanoLab - LM2023051 (2023–2026)/CzechNanoLab II; V3S-368808; HAZDRA, P., et al. Pseudo-vertical Schottky diode with ruthenium contacts on (113) boron-doped homoepitaxial diamond layers. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2023, ISSN 1862-6300. DOI 10.1002/pssa.202300508.; 1862-6300 (print); 1862-6319 (online); http://hdl.handle.net/10467/112316

الاتاحة: http://hdl.handle.net/10467/112316
https://doi.org/10.1002/pssa.202300508

المؤلفون: Hazdra P., Laposa A., Šobáň Z., Taylor A., Lambert N., Povolný V., Kroutil J., Gedeonová Z., Hubík P., Mortet V.

مصطلحات موضوعية: Diamond, Schottky diodes, Boron-doping, Molybdenum

وصف الملف: application/pdf

Relation: Diamond and Related Materials; info:eu-repo/grantAgreement/Czech Science Foundation/GA/GA20-11140S/CZ/Essential Elements of Diamond Power Electronics/; info:eu-repo/grantAgreement/Ministry of Education, Youth and Sports/LM/90110/CZ/CzechNanoLab - Výzkumná infrastruktura CzechNanoLab - LM2018110 (2020–2022)/CzechNanoLab; V3S-358002; HAZDRA, P., et al. Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers. Diamond and Related Materials. 2022, 126 ISSN 1879-0062. DOI 10.1016/j.diamond.2022.109088. Available from: https://www.sciencedirect.com/science/article/pii/S0925963522002709; 0925-9635 (print); 1879-0062 (online); http://hdl.handle.net/10467/100659

الاتاحة: http://hdl.handle.net/10467/100659
https://doi.org/10.1016/j.diamond.2022.109088

المؤلفون: Hazdra P., Laposa A., Šobáň Z., Voves J., Lambert N., Davydova M., Povolný V., Taylor A., Mortet V.

مصطلحات موضوعية: Diamond, Contacts, Boron-doping, Chemical vapor deposition, Contact resistance

وصف الملف: application/pdf

Relation: Diamond and Related Materials; info:eu-repo/grantAgreement/Czech Science Foundation/GA/GA20-11140S/CZ/Essential Elements of Diamond Power Electronics/; info:eu-repo/grantAgreement/Ministry of Education, Youth and Sports/LM/90110/CZ/CzechNanoLab - Výzkumná infrastruktura CzechNanoLab - LM2018110 (2020–2022)/CzechNanoLab; V3S-355201; HAZDRA, P., et al. Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers. Diamond and Related Materials. 2022, 121 ISSN 0925-9635. DOI 10.1016/j.diamond.2021.108797.; 0925-9635 (print); 1879-0062 (online); http://hdl.handle.net/10467/100694; 000787823400002; 2-s2.0-85121898882

الاتاحة: http://hdl.handle.net/10467/100694
https://doi.org/10.1016/j.diamond.2021.108797

المؤلفون: Mortet V., Taylor A., Davydova M., Jiránek J., Fekete L., Klimša L., Šimek D., Lambert N., Sedláková S., Kopeček J., Hazdra P.

مصطلحات موضوعية: Diamond, Boron-doping, Substrate crystallographic orientation, Plasma-enhanced chemical vapor deposition

وصف الملف: application/pdf

Relation: Diamond and Related Materials; info:eu-repo/grantAgreement/Czech Science Foundation/GA/GA20-11140S/CZ/Essential Elements of Diamond Power Electronics/; info:eu-repo/grantAgreement/Ministry of Education, Youth and Sports/LM/90110/CZ/CzechNanoLab - Výzkumná infrastruktura CzechNanoLab - LM2018110 (2020–2022)/CzechNanoLab; V3S-357708; MORTET, V., et al. Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth. Diamond and Related Materials. 2022, 122 ISSN 0925-9635. DOI 10.1016/j.diamond.2022.108887.; 0925-9635 (print); 1879-0062 (online); http://hdl.handle.net/10467/100536; 2-s2.0-85124102278

الاتاحة: http://hdl.handle.net/10467/100536
https://doi.org/10.1016/j.diamond.2022.108887

المؤلفون: Vobecky, J., Voves, J., Hazdra, P., Adamcik, I.

وصف الملف: text; 6-9; application/pdf

Relation: Radioengineering; http://www.radioeng.cz/fulltexts/1993/93_01_02.pdf; Radioengineering. 1993, vol. 2, č. 1, s. 6-9. ISSN 1210-2512; http://hdl.handle.net/11012/58596

الاتاحة: http://hdl.handle.net/11012/58596

المؤلفون: Hazdra, P., Voves, J., Oswald, J., Kuldova, K., Hospodkova, A., Hulicius, E., Pangrac, J.

المساهمون: Department of Microelectronics Prague, Czech Technical University in Prague (CTU), Institute of Physics Prague, Czech Academy of Sciences Prague (CAS)

المصدر: European Nano Systems Worshop ; ENS 2006 ; https://hal.archives-ouvertes.fr/hal-00166756 ; ENS 2006, Dec 2006, Paris, France. pp.9-13

مصطلحات موضوعية: InAs, GaAs, quantum dots, photomodulated reflectance spectroscopy, photoluminescence, electronic states, PACS : 85.35.-p, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

جغرافية الموضوع: Paris, France

Relation: info:eu-repo/semantics/altIdentifier/arxiv/0708.1468; hal-00166756; https://hal.archives-ouvertes.fr/hal-00166756; https://hal.archives-ouvertes.fr/hal-00166756/document; https://hal.archives-ouvertes.fr/hal-00166756/file/OCM9.pdf; ARXIV: 0708.1468

الاتاحة: https://hal.archives-ouvertes.fr/hal-00166756
https://hal.archives-ouvertes.fr/hal-00166756/document
https://hal.archives-ouvertes.fr/hal-00166756/file/OCM9.pdf

المؤلفون: Hazdra P., Smrkovský P., Popelka S.

مصطلحات موضوعية: lifetime control, p-i-n diodes, radiation defects, silicon carbide

وصف الملف: application/pdf

Relation: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE; info:eu-repo/grantAgreement/Ministry of Education, Youth and Sports/LM/90056/CZ/CANAM II - Centrum urychlovačů a jaderných analytických metod - LM2015056 (2016–2019)/CANAM II; http://hdl.handle.net/10467/98920; 000665848600001

الاتاحة: http://hdl.handle.net/10467/98920
https://doi.org/10.1002/pssa.202100218

المؤلفون: Hazdra P., Smrkovský P., Vobecký J., Mihaila A.

مصطلحات موضوعية: Neutrons, p-i-n diodes, radiation effects, silicon, silicon carbide

وصف الملف: application/pdf

Relation: IEEE Transactions on Electron Devices; https://ieeexplore.ieee.org/document/9286904; http://hdl.handle.net/10467/92399; 000602689000016

الاتاحة: http://hdl.handle.net/10467/92399
https://doi.org/10.1109/TED.2020.3038713

المؤلفون: Mortet V., Taylor A., Lambert N., Gedeonová Z., Fekete L., Lorinčík J., Klimša L., Kopeček J., Hubík P., Šobáň Z., Laposa A., Davydova M., Voves J., Pošta A., Povolný V., Hazdra P.

مصطلحات موضوعية: Boron-doped diamond, Electrical properties, (113) oriented epitaxial diamond

وصف الملف: application/pdf

Relation: Diamond and Related Materials; https://www.sciencedirect.com/science/article/pii/S0925963520307780; info:eu-repo/grantAgreement/Czech Science Foundation/GA/GA20-11140S/CZ/Essential Elements of Diamond Power Electronics/; http://hdl.handle.net/10467/92339; 000612811800009

الاتاحة: http://hdl.handle.net/10467/92339
https://doi.org/10.1016/j.diamond.2020.108223

المؤلفون: Oswald, J, Hazdra, P, Kuldová, K, Hospodková, A, Hulicius, E, Pangrác, J, Vyskočil, J

المصدر: Journal of Physics: Conference Series ; volume 245, page 012080 ; ISSN 1742-6596

الاتاحة: http://dx.doi.org/10.1088/1742-6596/245/1/012080
http://stacks.iop.org/1742-6596/245/i=1/a=012080/pdf