المؤلفون: Koo, June-Mo, Min, Hyung-Seob, Kim, Taeho, Lee, Wonhee, Lee, Jae-Gab, Kim, Jiyoung, Han, Jaeheon

المصدر: Ferroelectrics ; volume 260, issue 1, page 273-278 ; ISSN 0015-0193 1563-5112

الاتاحة: https://doi.org/10.1080/00150190108016029
http://www.tandfonline.com/doi/pdf/10.1080/00150190108016029

المؤلفون: Han, Jaeheon

المصدر: Sensors and Actuators A: Physical ; volume 75, issue 2, page 168-175 ; ISSN 0924-4247

الاتاحة: https://doi.org/10.1016/s0924-4247(98)00352-5
https://api.elsevier.com/content/article/PII:S0924424798003525?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0924424798003525?httpAccept=text/plain

المؤلفون: Han, Jaeheon, Ihm, Jisoon, Cheong, Hyeonsik

المصدر: AIP Conference Proceedings ; page 389-390 ; ISSN 0094-243X

الاتاحة: http://dx.doi.org/10.1063/1.3666417

المؤلفون: Han, Jaeheon, Yoo, Seungjin

المساهمون: Kulchin, Yuri N., Vitrik, Oleg B., Stroganov, Vladimir I.

المصدر: SPIE Proceedings ; Fundamental Problems of Optoelectronics and Microelectronics II ; ISSN 0277-786X

الاتاحة: http://dx.doi.org/10.1117/12.634541

المؤلفون: Han, Jaeheon, Neikirk, Dean P.

المساهمون: Chau, Kevin H., Roop, Ray M.

المصدر: SPIE Proceedings ; Micromachined Devices and Components II ; ISSN 0277-786X

الاتاحة: http://dx.doi.org/10.1117/12.250725

المؤلفون: Han, Jaeheon, Neikirk, Dean P., Clevenger, Marvin B., McDevitt, John T.

المساهمون: Motamedi, M. Edward, Bailey, Wayne

المصدر: SPIE Proceedings ; Microelectronic Structures and MEMS for Optical Processing II ; ISSN 0277-786X

الاتاحة: http://dx.doi.org/10.1117/12.251246

المؤلفون: Han, Jaeheon

المصدر: Journal of the Korean Physical Society; Sep2017, Vol. 71 Issue 6, p355-359, 5p

المؤلفون: Han, Jaeheon, Ryan, Joseph M., Kriman, Alfred M., Ferry, David K.

المساهمون: Eastman, Lester F.

المصدر: SPIE Proceedings ; High-Speed Electronics and Device Scaling ; ISSN 0277-786X

الاتاحة: http://dx.doi.org/10.1117/12.20919
http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=942762

المؤلفون: Ryan, Joseph M., Han, Jaeheon, Kriman, Alfred M., Ferry, David K., Newman, Peter G.

المساهمون: Craighead, Harold G., Gibson, J. M.

المصدر: SPIE Proceedings ; Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors ; ISSN 0277-786X

الاتاحة: http://dx.doi.org/10.1117/12.20771

المؤلفون: Han, Jaeheon, Kim, Jiyoung, Kim, Tae-Song, Kim, Jeong-Seog

المصدر: Sensors and Actuators A: Physical ; volume 79, issue 2, page 162-172 ; ISSN 0924-4247

الاتاحة: http://dx.doi.org/10.1016/s0924-4247(99)00267-8
https://api.elsevier.com/content/article/PII:S0924424799002678?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0924424799002678?httpAccept=text/plain

المؤلفون: Han, Jaeheon, Ferry, David K.

المصدر: Solid-State Electronics ; volume 43, issue 2, page 335-341 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/s0038-1101(98)00247-0
https://api.elsevier.com/content/article/PII:S0038110198002470?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110198002470?httpAccept=text/plain

المؤلفون: Han, Jaeheon

المصدر: Applied Physics Letters ; volume 74, issue 3, page 445-447 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.123056
https://pubs.aip.org/aip/apl/article-pdf/74/3/445/18539043/445_1_online.pdf

المؤلفون: Han, Jaeheon, Ferry, David K.

المصدر: Japanese Journal of Applied Physics ; volume 37, issue 9R, page 4672 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.1143/jjap.37.4672
https://iopscience.iop.org/article/10.1143/JJAP.37.4672
https://iopscience.iop.org/article/10.1143/JJAP.37.4672/pdf

المؤلفون: Han, Jaeheon

المصدر: Journal of the Korean Physical Society; May2014, Vol. 64 Issue 10, p1441-1445, 5p

المؤلفون: Han, Jaeheon, Neikirk, Dean P., Clevenger, Mervyn, John T McDevitt

المصدر: New York University Scholars
Scopus-Elsevier

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d349cef4b7e1cadfa84e9eca7137cb5a
https://nyuscholars.nyu.edu/en/publications/b3512cfb-a0a9-466e-a8de-faeb778bc413

المساهمون: Han, Jaeheon [Department of Electronic Engineering, Kangnam University, 111 Gugal-dong, Giheung-gu, Yongin-city, Gyeonggi-do, Korea 446-702 (Korea, Republic of)]

المصدر: AIP Conference Proceedings; 1399; 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666417; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)

وصف الملف: Medium: X; Size: page(s) 389-390

URL الوصول: http://www.osti.gov/scitech/biblio/21612400