نتائج البحث - "Haidet, Brian"

المساهمون: National Science Foundation, Coastal Fund, University of California, Santa Barbara, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

المصدر: Physical Review Materials ; volume 7, issue 2 ; ISSN 2475-9953

الاتاحة: http://dx.doi.org/10.1103/physrevmaterials.7.024602
https://link.aps.org/article/10.1103/PhysRevMaterials.7.024602
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.7.024602/fulltext

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8

Academic Journal

Epitaxial Integration and Defect Structure of Layered SnSe Films on PbSe/III–V Substrates

المؤلفون: Haidet, Brian B., Hughes, Eamonn, Mukherjee, Kunal

المساهمون: Division of Graduate Education, Division of Materials Research

المصدر: Crystal Growth & Design ; volume 22, issue 6, page 3824-3833 ; ISSN 1528-7483 1528-7505

الاتاحة: http://dx.doi.org/10.1021/acs.cgd.2c00188
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c00188

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9

Academic Journal

Pipe-diffusion-enriched dislocations and interfaces in SnSe/PbSe heterostructures

المؤلفون: Hughes, Eamonn T., Haidet, Brian B., Bonef, Bastien, Cai, Wei, Mukherjee, Kunal

المساهمون: National Science Foundation

المصدر: Physical Review Materials ; volume 5, issue 7 ; ISSN 2475-9953

الاتاحة: http://dx.doi.org/10.1103/physrevmaterials.5.073402
https://link.aps.org/article/10.1103/PhysRevMaterials.5.073402
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.5.073402/fulltext

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10

Academic Journal

Development of Lattice-Mismatched GaInAsP for Radiation Hardness

المؤلفون: France, Ryan M., Espinet-GonzÃ¡lez, Pilar, Haidet, Brian B., Mukherjee, Kunal, Guthrey, Harvey L., Atwater, Harry A., Walker, Don

المصدر: IEEE Journal of Photovoltaics, 10(1), 103-108, (2020-01)

مصطلحات موضوعية: Gallium arsenide, photovoltaic cells, radiation hardening, III-V semiconductor materials

Relation: https://doi.org/10.1109/jphotov.2019.2947555; eprintid:99716

الاتاحة: https://doi.org/10.1109/jphotov.2019.2947555

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11

Academic Journal

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies.

المؤلفون: Reddy, Pramod, Washiyama, Shun, Kaess, Felix, Hayden Breckenridge, M., Hernandez-Balderrama, Luis H., Haidet, Brian B., Alden, Dorian, Franke, Alexander, Sarkar, Biplab, Kohn, Erhard, Collazo, Ramon, Sitar, Zlatko

المصدر: Journal of Applied Physics; 2016, Vol. 119 Issue 14, p145702-1-145702-6, 6p, 1 Diagram, 7 Graphs

مصطلحات موضوعية: SILICON nitride, CHEMICAL vapor deposition, ALUMINUM gallium nitride, PASSIVATION, X-ray photoelectron spectroscopy, FERMI level, HETEROJUNCTIONS

12

Academic Journal

Growth and Magnetotransport in Thin‐Film α‐Sn on CdTe

المؤلفون: Vail, Owen, Taylor, Patrick, Folkes, Patrick, Nichols, Barbara, Haidet, Brian, Mukherjee, Kunal, de Coster, George

المصدر: physica status solidi (b) ; volume 257, issue 1 ; ISSN 0370-1972 1521-3951

الاتاحة: http://dx.doi.org/10.1002/pssb.201800513
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssb.201800513
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800513
https://onlinelibrary.wiley.com/doi/full-xml/10.1002/pssb.201800513

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13

Academic Journal

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN.

المؤلفون: Haidet, Brian B.¹ bhaidet@ncsu.edu, Bryan, Isaac¹, Reddy, Pramod¹, Bryan, Zachary¹, Collazo, Ramón¹, Sitar, Zlatko¹

المصدر: Journal of Applied Physics. 6/28/2015, Vol. 117 Issue 24, p245702-1-245702-5. 5p. 1 Diagram, 5 Graphs.

مصطلحات موضوعية: *ELECTRIC properties of aluminum gallium nitride, *OHMIC contacts, *SAPPHIRES, *ELECTRIC conductivity, *SILICON, *SCHOTTKY barrier

14

Academic Journal

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates.

المؤلفون: Wei Guo, Bryan, Zachary, Jinqiao Xie, Kirste, Ronny, Seiji Mita, Bryan, Isaac, Hussey, Lindsay, Bobea, Milena, Haidet, Brian, Gerhold, Michael, Collazo, Ramón, Sitar, Zlatko

المصدر: Journal of Applied Physics; 2014, Vol. 115 Issue 10, p103108-1-103108-6, 6p, 1 Diagram, 1 Chart, 6 Graphs

مصطلحات موضوعية: SEMICONDUCTOR lasers, QUANTUM well lasers, POWER density, LIGHT emitting diodes, OPTICAL pumping

15

Academic Journal

Interface structure and luminescence properties of epitaxial PbSe films on InAs(111)A.

المؤلفون: Haidet, Brian B., Nordin, Leland, Muhowski, Aaron J., Vallejo, Kevin D., Hughes, Eamonn T., Meyer, Jarod, Simmonds, Paul J., Wasserman, Daniel, Mukherjee, Kunal

المصدر: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Mar2021, Vol. 39 Issue 2, p1-11, 11p

مصطلحات موضوعية: INTERFACE structures, TWIN boundaries, THIN films, THICK films, SURFACE preparation, NARROW gap semiconductors

16

Academic Journal

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

المؤلفون: Sarkar, Biplab, Haidet, Brian B., Reddy, Pramod, Kirste, Ronny, Collazo, Ramon, Sitar, Zlatko

المساهمون: National Science Foundation, Army Research Office

المصدر: Applied Physics Express ; volume 10, issue 7, page 071001 ; ISSN 1882-0778 1882-0786

الاتاحة: http://dx.doi.org/10.7567/apex.10.071001
http://stacks.iop.org/1882-0786/10/i=7/a=071001/pdf
http://stacks.iop.org/1882-0786/10/i=7/a=071001?key=crossref.071ee686be50172926a447b6814ca73d

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17

Academic Journal

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

المؤلفون: Haidet, Brian B., Sarkar, Biplab, Reddy, Pramod, Bryan, Isaac, Bryan, Zachary, Kirste, Ronny, Collazo, Ramon, Sitar, Zlatko

المساهمون: National Science Foundation, Army Research Office

المصدر: Japanese Journal of Applied Physics ; volume 56, issue 10, page 100302 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.7567/jjap.56.100302
http://stacks.iop.org/1347-4065/56/i=10/a=100302/pdf
http://stacks.iop.org/1347-4065/56/i=10/a=100302?key=crossref.dd759cf07da306705e289289867f91f3

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18

Academic Journal

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

المؤلفون: Guo, Wei, Bryan, Zachary, Xie, Jinqiao, Kirste, Ronny, Mita, Seiji, Bryan, Isaac, Hussey, Lindsay, Bobea, Milena, Haidet, Brian, Gerhold, Michael, Collazo, Ramón, Sitar, Zlatko

المساهمون: NSF

المصدر: Journal of Applied Physics ; volume 115, issue 10 ; ISSN 0021-8979 1089-7550

الاتاحة: http://dx.doi.org/10.1063/1.4868678
https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.4868678/15128316/103108_1_online.pdf

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19

Academic Journal

Sapphire decomposition and inversion domains in N-polar aluminum nitride

المؤلفون: Hussey, Lindsay, White, Ryan M., Kirste, Ronny, Mita, Seiji, Bryan, Isaac, Guo, Wei, Osterman, Katherine, Haidet, Brian, Bryan, Zachary, Bobea, Milena, Collazo, Ramón, Sitar, Zlatko

المساهمون: NSF

المصدر: Applied Physics Letters ; volume 104, issue 3 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.4862982
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4862982/13268181/032104_1_online.pdf

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20

Academic Journal

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition.

المؤلفون: Reddy, Pramod, Washiyama, Shun, Mecouch, Will, Hernandez-Balderrama, Luis H., Kaess, Felix, Hayden Breckenridge, M., Sarkar, Biplab, Haidet, Brian B., Franke, Alexander, Kohn, Erhard, Collazo, Ramon, Sitar, Zlatko

المصدر: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Nov2018, Vol. 36 Issue 6, pN.PAG-N.PAG, 5p

مصطلحات موضوعية: CHEMICAL vapor deposition, DIELECTRICS, ARTIFICIAL intelligence, FERMI level, GALVANIC isolation

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