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1Academic Journal
المؤلفون: Sulimov, M. A., Sarychev, M. N., Yakushev, M. V., Márquez-Prieto, J., Forbes, I., Ivanov, V. Y., Edwards, P. R., Mudryi, A. V., Krustok, J., Martin, R. W.
المصدر: Materials Science in Semiconductor Processing
مصطلحات موضوعية: BUFFER LAYERS, CADMIUM SULFIDE, CARRIER MOBILITY, DEFECTS, DOPPLER EFFECT, ELECTRONS, II-VI SEMICONDUCTORS, LIQUEFIED GASES, MOLYBDENUM, OXIDE MINERALS, PHOTOLUMINESCENCE, RADIATION, RED SHIFT, SOLAR CELLS, TEMPERATURE, ZINC OXIDE, EXCITATION INTENSITY, HIGH ENERGY BANDS, PHOTOLUMINESCENCE SPECTRUM, POTENTIAL FLUCTUATIONS, RANDOMLY DISTRIBUTED, SECONDARY DEFECT, TEMPERATURE DEPENDENCIES, VARIABLE TEMPERATURE, IRRADIATION
وصف الملف: application/pdf
Relation: Effects of irradiation of ZnO/CdS/Cu2ZnSnSe4/Mo/glass solar cells by 10 MeV electrons on photoluminescence spectra / M. A. Sulimov, M. N. Sarychev, M. V. Yakushev, J. Márquez-Prieto, et al. — DOI 10.1016/j.mssp.2020.105301 // Materials Science in Semiconductor Processing. — 2021. — Iss. 121. — 105301.; https://doi.org/10.1016/j.mssp.2020.105301; 768874f3-22f4-4ed4-9958-ae8add4da505; http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85088740104; http://elar.urfu.ru/handle/10995/92644; 85088740104; 000585281300005
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2
المؤلفون: M. A. Sulimov, J. Márquez-Prieto, Robert W. Martin, Paul R. Edwards, A. V. Mudryi, V. Yu. Ivanov, Ian Forbes, M. N. Sarychev, Jüri Krustok, M. V. Yakushev
المصدر: Materials Science in Semiconductor Processing
مصطلحات موضوعية: Free electron model, CADMIUM SULFIDE, Materials science, Photoluminescence, ZINC OXIDE, POTENTIAL FLUCTUATIONS, 02 engineering and technology, Electron, RED SHIFT, 01 natural sciences, Molecular physics, Spectral line, 0103 physical sciences, CARRIER MOBILITY, TEMPERATURE DEPENDENCIES, General Materials Science, Irradiation, TEMPERATURE, QC, BUFFER LAYERS, 010302 applied physics, Mechanical Engineering, PHOTOLUMINESCENCE SPECTRUM, VARIABLE TEMPERATURE, SOLAR CELLS, MOLYBDENUM, DEFECTS, Liquid nitrogen, DOPPLER EFFECT, 021001 nanoscience & nanotechnology, Condensed Matter Physics, II-VI SEMICONDUCTORS, OXIDE MINERALS, ELECTRONS, IRRADIATION, HIGH ENERGY BANDS, SECONDARY DEFECT, Mechanics of Materials, RADIATION, Charge carrier, PHOTOLUMINESCENCE, 0210 nano-technology, EXCITATION INTENSITY, RANDOMLY DISTRIBUTED, Excitation, LIQUEFIED GASES
وصف الملف: application/pdf
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3Conference
المؤلفون: P. Palestri, L. Selmi, F. Widdershoven, E. Sangiorgi, PAVESI, Maura
المساهمون: Electron Devices Society, P., Palestri, L., Selmi, Pavesi, Maura, F., Widdershoven, E., Sangiorgi
مصطلحات موضوعية: Monte Carlo, MOS capacitor, high energy bands
وصف الملف: ELETTRONICO
Relation: info:eu-repo/semantics/altIdentifier/isbn/9780780362796; info:eu-repo/semantics/altIdentifier/wos/WOS:000166421700009; ispartofbook:Proc. of International Conference on Simulation of Semiconductor Processes and Devices 2000; International Conference on Simulation of Semiconductor Processes and Devices 2000; firstpage:38; lastpage:41; numberofpages:4; http://hdl.handle.net/11381/2283274; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-0033697683; http://www.sispad.info/browse-proceedings/sispad-2000/