المؤلفون: Jian-Hong Ke, Ching-Sung Lee, Han-Yin Liu, Jung-Hui Tsai, Wei-Chou Hsu

المصدر: IEEE Access, Vol 12, Pp 50177-50183 (2024)

مصطلحات موضوعية: Symmetrically-graded channel, wide-gap AlGaN channel, InAlN back-barrier, MOS-HFET, Al₂O₃, ultrasonic spray pyrolysis deposition, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10488413/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/6fb213d6d9ba4f258f3b1441c4e031e3

المؤلفون: Yatexu Patel, Pouya Valizadeh

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 338-344 (2024)

مصطلحات موضوعية: InAlN/GaN, heterostructure field effect transistor (HFET), lattice-matched, low frequency noise (LFN), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10506227/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/3856d928e0984a0bb473abe30dce2a50

المؤلفون: Yatexu Patel, Pouya Valizadeh

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 525-533 (2024)

مصطلحات موضوعية: InAlN/GaN, heterostructure field effect transistor (HFET), lattice-matched, source access resistance, transconductance linearity, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10599155/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/c34221d098044f9b9824c3b217190e5a

المؤلفون: Yatexu Patel, Pouya Valizadeh

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 645-650 (2024)

مصطلحات موضوعية: InAlN/GaN, heterostructure field effect transistor (HFET), lattice-matched, on-state breakdown voltage, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10646346/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/fe7e899f8df24168be9a6cf23a251629

المؤلفون: Jian-Hong Ke, Ching-Sung Lee, Yu-Xuan Li, Wei-Chou Hsu

المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 421-425 (2023)

مصطلحات موضوعية: P-channel, GaN, MOS-HFET, non-vacuum ultrasonic spray pyrolysis deposition, Al₂O₃, drain field-plate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10182302/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/8bf1891360e8421eb672a4748a8a7521

المؤلفون: Ching-Sung Lee, Chih-Tsung Cheng, Jian-Hong Ke, Wei-Chou Hsu

المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 256-261 (2023)

مصطلحات موضوعية: Wide-gap AlGaN channel, InAlGaN barrier, MOS-HFET, Al₂O₃, non-vacuum ultrasonic spray pyrolysis deposition, drain field-plate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10107908/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/32d57cba5e4a4109afc9f96437d4b0f2

المؤلفون: J. Mehta, I. Abid, R. Elwaradi, Y. Cordier, F. Medjdoub

المصدر: e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100263- (2023)

مصطلحات موضوعية: HFET, AlGaN, UWBG, High Voltage Power Electronics, AlN, HEMT, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2772671123001584; https://doaj.org/toc/2772-6711

URL الوصول: https://doaj.org/article/d3011ed469e44a1b9fd41453f96cfcc8

المؤلفون: Xiuyang Tan, Huiqing Sun, Yuan Li, Xiaoyu Xia, Fan Xia, Miao Zhang, Jiancheng Ma, Liang Xu, Zhiyou Guo

المصدر: Results in Physics, Vol 37, Iss , Pp 105508- (2022)

مصطلحات موضوعية: Super HFET, Polarization Junctions, GaN, High breakdown-voltage, Physics, QC1-999

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2211379722002492; https://doaj.org/toc/2211-3797

URL الوصول: https://doaj.org/article/3799146036b240588a7fee229c799c0c

المؤلفون: Ching-Sung Lee, Chia-Lun Li, Wei-Chou Hsu, Cheng-Yang You, Han-Yin Liu

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 1003-1008 (2021)

مصطلحات موضوعية: Widegap AlGaN channel, MOS-HFET, enhancement-mode, Al₂O₃, non-vacuum ultrasonic spray pyrolysis deposition, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9581294/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/103530f8aa1f40ad9108068d3e36fed6

المؤلفون: Ching-Sung Lee, Yan-Ting Shen, Wei-Chou Hsu, Yi-Ping Huang, Cheng-Yang You

المصدر: IEEE Journal of the Electron Devices Society, Vol 8, Pp 9-14 (2020)

مصطلحات موضوعية: AlₓGa₁−ₓN, MOS-HFET, symmetrically-graded, widegap channel, Al₂O₃, non-vacuum ultrasonic spray pyrolysis deposition, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8917644/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/812282a59cad4d8c953ba22fe3bd85cf

المؤلفون: Băjenescu, Titu-Marius I.

المصدر: Journal of Engineering Science (Chişinău), Vol XXVI, Iss 4, Pp 67-77 (2019)

مصطلحات موضوعية: gan, sic, si vs sic, igbt, mosfet, hemt, hfet, fet, diamond power devices, Engineering (General). Civil engineering (General), TA1-2040, Electronic computers. Computer science, QA75.5-76.95

وصف الملف: electronic resource

Relation: https://jes.utm.md/wp-content/uploads/sites/20/2020/01/JES-2019-4_67-77.pdf; https://doaj.org/toc/2587-3474; https://doaj.org/toc/2587-3482

URL الوصول: https://doaj.org/article/d733b4738ca14653b43ab13b31b4dca8

المؤلفون: Aroop K. Behera (11403389), Charles Thomas Harris (6594371), Douglas V. Pete (3915605), Collin J. Delker (3694765), Per Erik Vullum (1452517), Marta B. Muniz (11403392), Ozhan Koybasi (11403395), Takashi Taniguchi (331592), Kenji Watanabe (75040), Branson D. Belle (9515100), Suprem R. Das (1477630)

مصطلحات موضوعية: Medicine, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Information Systems not elsewhere classified, reduced contact resistance, hexagonal boron nitride, dimensional heterostructure field, atomically thin channels, enhanced carrier mobility, dimensional electrical contacts, dependent transport behavior, dimensional edge contacts, demonstrate ultralow noise, electrical transport, surface contacts, mobility hfet, edge contacts, dependent study, ballistic transport, noise two, noise graphene, noise characteristics, frequency noise, ≈ 10, study provides, single atomic, modeling based, hooge parameter, extremely limited

Relation: https://figshare.com/articles/journal_contribution/High-Performance_and_Ultralow-Noise_Two-Dimensional_Heterostructure_Field-Effect_Transistors_with_One-Dimensional_Electrical_Contacts/16583672

الاتاحة: https://doi.org/10.1021/acsaelm.1c00595.s001

المؤلفون: Ching-Sung Lee, Xue-Cheng Yao, Yi-Ping Huang, Wei-Chou Hsu

المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 430-434 (2019)

مصطلحات موضوعية: MOS-HFET, InAlN/AlN/GaN, Al₂O₃, ultrasonic spray pyrolysis deposition, UV detection, spectral responsivity, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8671702/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/cd340f9eecde4efdad5773c86532f593

المؤلفون: Mehta, Jash

المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université de Lille, Farid Medjdoub

المصدر: https://hal.science/tel-04666870 ; Micro and nanotechnologies/Microelectronics. Université de Lille, 2024. English. ⟨NNT : 2024ULILN018⟩.

مصطلحات موضوعية: AlN, Uwbg, Hemt, AlGaN, Hfet, Haute Tension, Transistor à électron à haute mobilité, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: NNT: 2024ULILN018

الاتاحة: https://hal.science/tel-04666870
https://hal.science/tel-04666870v1/document
https://hal.science/tel-04666870v1/file/These_MEHTA_Jash.pdf

المؤلفون: Aiyoshi Inoue, Kosuke Yamamoto, Makoto Miyoshi, Sakura Tanaka, Takashi Egawa, 三好 実人, 井上 暁喜, 山本 皓介, 江川 孝志, 田中 さくら

المصدر: JSAP Annual Meetings Extended Abstracts. 2021, :2439

المؤلفون: Akiyoshi Inoue, Hiroki Harada, Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, 三好 実人, 井上 暁喜, 原田 紘希, 山中 瑞樹, 江川 孝志

المصدر: JSAP Annual Meetings Extended Abstracts. 2021, :2438

المؤلفون: Ching-Sung Lee, Xue-Cheng Yao, Yi-Ping Huang, Wei-Chou Hsu

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1142-1146 (2018)

مصطلحات موضوعية: MOS-HFET, InAlN/AlN/GaN, Al₂O₃/TiO₂, ultrasonic spray pyrolysis deposition, RF sputtering, on/off current ratio, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8470934/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/7ab9b3f25e0a471b8da70b7aef89ff5c

المؤلفون: Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Yu-Chang Chen

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 68-73 (2018)

مصطلحات موضوعية: InAlN/AlN/GaN, MOS-HFET, Al₂O₃, non-vacuum ultrasonic spray pyrolysis deposition, backside metal-trench, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8094232/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/ab7923b0c87444eabca0c5b05b9c28fe

المؤلفون: Yuangang Wang, Yuanjie Lv, Xingye Zhou, Jiayun Yin, Tingting Han, Guodong Gu, Xubo Song, Xin Tan, Shaobo Dun, Hongyu Guo, Yulong Fang, Zhihong Feng, Shujun Cai

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 106-109 (2018)

مصطلحات موضوعية: E-mdoe, high current density, high-uniformity threshold voltage, GSG HFET, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8121975/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/bc190b0f916c46cd893c94c6197b5505

المؤلفون: Ferhat Bayram, Durga Gajula, Digangana Khan, Goutam Koley

المصدر: Micromachines; Volume 11; Issue 9; Pages: 875

مصطلحات موضوعية: microcantilever, VO 2, metal insulator transition (MIT), AlGaN/GaN, heterojunction field effect transistors (HFET), deflection transducer, strain sensor, MEMS

وصف الملف: application/pdf

Relation: A：Physics; https://dx.doi.org/10.3390/mi11090875

الاتاحة: https://doi.org/10.3390/mi11090875