نتائج البحث - "H. Fukutome"

1

Academic Journal

28p-ZG-6 1次元Hubbardモデルにおける平均場ソリトンとポーラロンのU依存性 / 28p-ZG-6 U dependence of the mean fleld soliton and polaron in the 1-D Hubbard model

المؤلفون: H. FUKUTOME, Y. SHIMOI, 下位幸弘, 福留秀雄

المصدر: Meeting Abstracts of the Physical Society of Japan. 1991, :326

View record in JSTAGE

2

Academic Journal

28p-ZG-7 A topological defect connecting SDW to CDW:HALFON / 28p-ZG-7 SDWとCDWを結ぶトポロジカルな欠陥:HALFON

المؤلفون: H. Fukutome, N. Tomita, 富田憲一, 福留秀雄

المصدر: Meeting Abstracts of the Physical Society of Japan. 1991, :326

View record in JSTAGE

3

Academic Journal

12a-B-6 Resonating Hartree-Fock Studies on Excited States in the 1D Bond Alternated Hubbrd Model / 12a-B-6 共鳴ハートリー・フォック法による一次元結合交代ハバードモデルにおける励起状態の研究

المؤلفون: A. Ikawa, H. Fukutome, N. Tomita, 井川淳, 富田憲一, 福留秀雄

المصدر: Meeting Abstracts of the Physical Society of Japan. 1993, :347

View record in JSTAGE

4

Academic Journal

1a-B-5 ドープされたポリアセチレンの非磁性的電気伝導のSuperdefect model (II) / Superdefect model for Non-Magnetic Electric Conduction in Doped Polyacetylene

المؤلفون: A. Ikawa, A. Yamashiro, H. Fukutome, 井川淳, 山城敦, 福留秀雄

المصدر: Meeting Abstracts of the Physical Society of Japan. 1993, :338

View record in JSTAGE

5

Academic Journal

5a-C-11 Electronic and Lattice Structure of a Se_<1-X>Te_X chain / 5a-C-11 Se-Te混合鎖の電子-格子構造

المؤلفون: A. Ikawa, H. Fukutome, 井川淳志, 福留秀雄

المصدر: Meeting Abstracts of the Physical Society of Japan. 1989, :162

View record in JSTAGE

6

Academic Journal

Te,Se金属相のvector charge density waveモデルII / Vector charge density wave model of metallic Te and Se II

المؤلفون: H. FUKUTOME, Y. SHIMOI, 下位幸弘, 福留秀雄

المصدر: Meeting Abstracts of the Physical Society of Japan. 1990, :189

View record in JSTAGE

7

Academic Journal

4a-N-8 Te, Se金属相のvector charge density waveモデル / 4a-N-8 Vector charge density wave model of metallic Te and Se

المؤلفون: H. FUKUTOME, Y. SHIMOI, 下位幸弘, 福留秀雄

المصدر: Meeting Abstracts of the Physical Society of Japan. 1989, :165

View record in JSTAGE

8

Academic Journal

30a-E-9 Applications of the Resonating Hartree-Fock method to the Hubbard model with a bond alternation / 30a-E-9 共鳴ハートリー・フォック法による結合交代ハバードモデルにおける量子揺らぎの研究

المؤلفون: A. Ikawa, H. Fukutome, N. Tomita, 井川淳, 富田憲一, 福留秀雄

المصدر: Meeting Abstracts of the Physical Society of Japan. 1993, :485

View record in JSTAGE

9

Academic Journal

3p-C-7 Ionic States of m-Triphenyldicarbene III / 3p-C-7 メタトリフェニルジカルベンのイオン状態 III

المؤلفون: A. Ikawa, H. Fukutome, H. Mizouchi, 井川淳志, 溝内秀男, 福留秀雄

المصدر: Meeting Abstracts of the Physical Society of Japan. 1996, :407

View record in JSTAGE

10

Academic Journal

3p-C-8 Interchain Transfer Integrals and Electronic and Lattice Structures in Highly Sodium Doped Polyacetylene / 3p-C-8 高濃度 Na ドープポリアセチレンの鎖間トランスファと電子格子状態

المؤلفون: A. Ikawa, A. Yamashiro, H. Fukutome, 井川淳志, 山城敦, 福留秀雄

المصدر: Meeting Abstracts of the Physical Society of Japan. 1996, :407

View record in JSTAGE

11

Academic Journal

30p-G-10 1次元拡張ハバードモデルにおける大振巾量子のゆらぎの解析的研究 / Analytical Study for Large Quantum Fluctuation in 1-d Extended Hubbard Model

المؤلفون: A. Takahashi, H. Fukutome, 福留秀雄, 高橋聡

المصدر: Meeting Abstracts of the Physical Society of Japan. 1990, :317

View record in JSTAGE

12

Academic Journal

30p-G-11 ポリアセチレン金属相の超ソリトンモデル / Supersoliton Model for Metallic Phase of Polyacetylene

المؤلفون: A. Takahashi, H. Fukutome, S. Yamamoto, 山本昌司, 福留秀雄, 高橋聡

المصدر: Meeting Abstracts of the Physical Society of Japan. 1990, :317

View record in JSTAGE

13

Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint

المؤلفون: H. Fukutome, K. Suh, W. Kim, Y. Moriyama, S. Kang, B. Eom, J. Kim, C. Yoon, W. Kwon, Y. Chung, Y. Nam, Y. Kim, S. Park, J. Park, H. -J. Cho, K. Rim, S. D. Kwon

المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::81bbff4ad49553aa1ea0b27d0dd1cd8f
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830184

View record in OpenAIRE

14

Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications

المؤلفون: H.-J. Cho, H.S. Oh, K.J. Nam, Y.H. Kim, K.H. Yeo, W.D. Kim, Y.S. Chung, Y.S. Nam, S.M. Kim, W.H. Kwon, M.J. Kang, I.R. Kim, H. Fukutome, C.W. Jeong, H.J. Shin, Y.S. Kim, D.W. Kim, S.H. Park, J.H. Jeong, S.B. Kim, D.W. Ha, J.H. Park, H.S. Rhee, S.J. Hyun, D.S. Shin, D.H. Kim, H.Y. Kim, S. Maeda, K.H. Lee, M.C. Kim, Y.S. Koh, B. Yoon, K. Shin, N.I. Lee, S.B. Kangh, K.H. Hwang, J.H. Lee, J.-H. Ku, S.W. Nam, S.M. Jung, H.K. Kang, J.S. Yoon, E.S. Jung

المصدر: 2016 IEEE Symposium on VLSI Technology.

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Contact resistance, Doping, Gate stack, Electrical engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Fin (extended surface), Power (physics), 0103 physical sciences, Optoelectronics, Node (circuits), Static random-access memory, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d8be10c587190525d0b9456ac1b7f5ca
https://doi.org/10.1109/vlsit.2016.7573359

View record in OpenAIRE

15

Direct observation of sintering mechanics of a single grain boundary

المؤلفون: Masato Sone, Yutaka Shinoda, T. Misaki, H. Fukutome, Takashi Akatsu, N. Kobayashi, Fumihiro Wakai, Yuji Higo

المصدر: Acta Materialia. 60:507-516

مصطلحات موضوعية: Surface diffusion, Materials science, Polymers and Plastics, Misorientation, Metals and Alloys, Sintering, Mechanics, Electronic, Optical and Magnetic Materials, Grain growth, Ceramics and Composites, Effective diffusion coefficient, Grain boundary diffusion coefficient, Grain boundary, Grain boundary strengthening

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db82fa5b1be68261b39f8443a3fa8aa5
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100630200

View record in OpenAIRE

16

Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs

المؤلفون: Y. Momiyama, Y. Tagawa, H. Fukutome, Tomohiro Kubo, Takayuki Aoyama, Hiroshi Arimoto

المصدر: IEEE Transactions on Electron Devices. 53:2755-2763

مصطلحات موضوعية: Surface diffusion, Materials science, business.industry, Analytical chemistry, Surface finish, Line edge roughness, Electronic, Optical and Magnetic Materials, law.invention, Ion implantation, Nanoelectronics, law, MOSFET, Electrical performance, Optoelectronics, Electrical and Electronic Engineering, Scanning tunneling microscope, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::bbd982a9a963ec29512fe191c4bb9bce
https://doi.org/10.1109/ted.2006.882784

View record in OpenAIRE

17

Effects of Gate Line Width Roughness on Threshold-Voltage Fluctuation Among Short-Channel Transistors at High Drain Voltage

المؤلفون: S. Satoh, M. Tajima, K. Hosaka, H. Fukutome, E. Yoshida, Y. Momiyama

المصدر: IEEE Electron Device Letters. 31:240-242

مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, High voltage, Drain-induced barrier lowering, Surface finish, Electronic, Optical and Magnetic Materials, law.invention, Threshold voltage, law, Electrode, MOSFET, Optoelectronics, Electrical and Electronic Engineering, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8b390dae2aaeb22f3805f3316650a647
https://doi.org/10.1109/led.2009.2039022

View record in OpenAIRE

18

Sub-30-nm FUSI CMOS Transistors Fabricated by Simple Method Without Additional CMP Process

المؤلفون: H. Ohta, K. Kawamura, Y. Uchino, T. Aoyama, H. Fukutome, K. Hosaka, S. Akiyama

المصدر: IEEE Electron Device Letters. 29:765-767

مصطلحات موضوعية: Materials science, business.industry, International Electron Devices Meeting, Transistor, Nanotechnology, Electronic, Optical and Magnetic Materials, law.invention, chemistry.chemical_compound, chemistry, CMOS, law, Etching (microfabrication), Chemical-mechanical planarization, Logic gate, Silicide, Optoelectronics, Electrical and Electronic Engineering, business, Layer (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::afdf4d5b02f4f8b113ff2b9e72fcbdd1
https://doi.org/10.1109/led.2008.2000915

View record in OpenAIRE

19

Design of Donor Oligomers To Produce Parallel Spins upon Electron Transfer

المؤلفون: H. Fukutome, Hideo Mizouchi, A. Ikawa

المصدر: Journal of the American Chemical Society. 117:3260-3269

مصطلحات موضوعية: Electron transfer, Colloid and Surface Chemistry, Spins, Chemical physics, Chemistry, General Chemistry, Photochemistry, Biochemistry, Catalysis

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::aead2046ff84cdecf75fc01bdaa1e8da
https://doi.org/10.1021/ja00116a030

View record in OpenAIRE

20

Comprehensive extensibility of 20nm low power/high performance technology platform featuring scalable high-k/metal gate planar transistors with reduced design corner

المؤلفون: H. Fukutome, Shigenobu Maeda, K. Cheon, S. D. Kwon, Jae Gon Lee, U. J. Roh, D. K. Sohn, Jongchol Kim, Seungwon Cha, Jong Pyo Kim

المصدر: 2012 International Electron Devices Meeting.

مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, Extensibility, Capacitance, Threshold voltage, law.invention, law, Low-power electronics, MOSFET, Optoelectronics, business, Metal gate, High-κ dielectric

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c8c5c1963bca9fc929cd2c3c5b6e1174
https://doi.org/10.1109/iedm.2012.6478973

View record in OpenAIRE

تنقيح النتائج