المؤلفون: Hongyang Guo, Shengpeng Yang, Ping Zhang, Runxian Xing, Guohao Yu, Shaomeng Wang, Yubin Gong

المصدر: AIP Advances, Vol 14, Iss 4, Pp 045224-045224-9 (2024)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/124fde21bb4c458ea72028e592189839

المؤلفون: Ping Zhang, Yin Dong, Xubo Li, Xinxin Cao, Youfeng Yang, Guohao Yu, Shengpeng Yang, Shaomeng Wang, Yubin Gong

المصدر: Micromachines, Vol 15, Iss 6, p 723 (2024)

مصطلحات موضوعية: surface plasmon polaritons, free electron excitation, lateral radiation, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/15/6/723; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/cafec9a5162b4454a8f9b8e8cfe03cd6

المؤلفون: Bohan Guo, Guohao Yu, Li Zhang, Jiaan Zhou, Zheming Wang, Runxian Xing, An Yang, Yu Li, Bosen Liu, Xiaohong Zeng, Zhongkai Du, Xuguang Deng, Zhongming Zeng, Baoshun Zhang

المصدر: Crystals, Vol 14, Iss 3, p 253 (2024)

مصطلحات موضوعية: GaN, N-polar, GaN/AlGaN MIS-HEMT, chemical–mechanical polishing (CMP), layer transfer technology, Crystallography, QD901-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2073-4352/14/3/253; https://doaj.org/toc/2073-4352

URL الوصول: https://doaj.org/article/fb64bbf0298a4e41a436f7b7124cc3df

المؤلفون: An Yang, Xing Wei, Wenchao Shen, Yu Hu, Tiwei Chen, Heng Wang, Jiaan Zhou, Runxian Xing, Xiaodong Zhang, Guohao Yu, Yaming Fan, Yong Cai, Zhongming Zeng, Baoshun Zhang

المصدر: Crystals, Vol 13, Iss 4, p 620 (2023)

مصطلحات موضوعية: p-GaN/AlGaN/GaN, temperature sensor, semiconductor materials, Crystallography, QD901-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2073-4352/13/4/620; https://doaj.org/toc/2073-4352

URL الوصول: https://doaj.org/article/999c192057d146be94f45928d62fd370

المؤلفون: Yu Li, Guohao Yu, Heng Wang, Jiaan Zhou, Zheming Wang, Runxian Xing, Shaoqian Lu, An Yang, Bingliang Zhang, Yong Cai, Zhongming Zeng, Baoshun Zhang

المصدر: Applied Physics Express, Vol 17, Iss 1, p 011004 (2023)

مصطلحات موضوعية: TMAH, interface states, the AC-CV characteristics, the shift of threshold voltage, the pulse I–V measurement, GaN MIS-HEMT, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1882-0786

URL الوصول: https://doaj.org/article/f0a77c561ce24be281e882fda4a12b9c

المؤلفون: Runze Lin, Desheng Zhao, Guohao Yu, Xiaoyan Liu, Dongdong Wu, Erdan Gu, Xugao Cui, Ran Liu, Baoshun Zhang, Pengfei Tian

المصدر: AIP Advances, Vol 10, Iss 10, Pp 105317-105317-6 (2020)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/6fbb37fd419c4ba7b9c244002a7033de

المؤلفون: Liang Song, Kai Fu, Jie Zhao, Guohao Yu, Ronghui Hao, Xiaodong Zhang, Fu Chen, Yaming Fan, Yong Cai, Baoshun Zhang

المصدر: AIP Advances, Vol 8, Iss 3, Pp 035213-035213-6 (2018)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/5f5e8d99eca24229a9cb8a11b8afa9d1

المؤلفون: Liang Song, Kai Fu, Zhili Zhang, Shichuang Sun, Weiyi Li, Guohao Yu, Ronghui Hao, Yaming Fan, Wenhua Shi, Yong Cai, Baoshun Zhang

المصدر: AIP Advances, Vol 7, Iss 12, Pp 125023-125023-7 (2017)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/4359047cb0e64571ba0de43cfe273c5f

المؤلفون: Fu Chen, Shichuang Sun, Xuguang Deng, Kai Fu, Guohao Yu, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang

المصدر: AIP Advances, Vol 7, Iss 12, Pp 125018-125018-7 (2017)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/7c2cc3d485994287b98d9b39e02a20ab

المؤلفون: Shuiming Li, Yu Zhou, Hongwei Gao, Shujun Dai, Guohao Yu, Qian Sun, Yong Cai, Baoshun Zhang, Sheng Liu, Hui Yang

المصدر: AIP Advances, Vol 6, Iss 3, Pp 035308-035308-5 (2016)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/5e91856f51884e3e871dc7527d24b48e

المؤلفون: Ying Ma, Liang Chen, Zhihua Dong, Yifang Hong, Yang Xiao, Yijie Xin, Bin Zhang, Hua Qin, Ting Zhang, Xiaodong Zhang, Guohao Yu, Zhiqun Cheng, Lingfeng Mao, Yong Cai

المصدر: Electronics; Volume 12; Issue 8; Pages: 1809

مصطلحات موضوعية: AlGaN/GaN heterojunction, CF 4 plasma, polar gas ambient

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics12081809

الاتاحة: https://doi.org/10.3390/electronics12081809

المؤلفون: Xiaoyu Ding, Xu Yuan, Tao Ju, Guohao Yu, Bingliang Zhang, Zhongkai Du, Zhongming Zeng, Baoshun Zhang, Xinping Zhang

المصدر: Electronics; Volume 12; Issue 6; Pages: 1424

مصطلحات موضوعية: p-GaN, AlGaN/GaN HEMT, passivation, hydrogen ion implantation

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics12061424

الاتاحة: https://doi.org/10.3390/electronics12061424

المؤلفون: Xiaodong Zhang, Xing Wei, Peipei Zhang, Hui Zhang, Li Zhang, Xuguang Deng, Yaming Fan, Guohao Yu, Zhihua Dong, Houqiang Fu, Yong Cai, Kai Fu, Baoshun Zhang

المصدر: Electronics, Vol 11, Iss 895, p 895 (2022)

مصطلحات موضوعية: AlGaN/GaN, interface state, MIS-HEMT, SiN x /SiON, threshold voltage, Electronics, TK7800-8360

Relation: https://www.mdpi.com/2079-9292/11/6/895; https://doaj.org/toc/2079-9292; https://doaj.org/article/aa555f5e3aac470e854ae4f7c2a76c02

الاتاحة: https://doi.org/10.3390/electronics11060895
https://doaj.org/article/aa555f5e3aac470e854ae4f7c2a76c02

المؤلفون: Bosen Liu, Guohao Yu, Huimin Jia, Jingyuan Zhu, Jiaan Zhou, Yu Li, Bingliang Zhang, Zhongkai Du, Bohan Guo, Lu Wang, Qizhi Huang, Leifeng Jiang, Zhongming Zeng, Zhipeng Wei, Baoshun Zhang

المصدر: Semiconductor Technology / Bandaoti Jishu; Jul2024, Vol. 45 Issue 7, p1-6, 6p

المؤلفون: Jiaan Zhou, Wenxin Tang, Tao Ju, Heng Wang, Guohao Yu, Xin Zhou, Li Zhang, Kun Xu, Xuan Zhang, Zhongming Zeng, Xinping Zhang, Baoshun Zhang

المصدر: ACS Applied Materials & Interfaces. 15:26159-26165

مصطلحات موضوعية: General Materials Science

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::50cdaf0a7b88afa289d94a0db45a80fe
https://doi.org/10.1021/acsami.3c02840

المؤلفون: Xing Wei, Wenchao Shen, Xin Zhou, Wenbo Tang, Yongjian Ma, Tiwei Chen, Dawei Wang, Houqiang Fu, Xiaodong Zhang, Wenkui Lin, Guohao Yu, Yong Cai, Baoshun Zhang

المصدر: IEEE Electron Device Letters. 44:13-16

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5da6c4e666b72fae09ef1116167a1d31
https://doi.org/10.1109/led.2022.3220600

المؤلفون: Shaoqian Lu^1,2, Guohao Yu², Yingfei Sun³, Xu Yuan³, Zhongkai Du⁴, Bingliang Zhang⁴, Lu Wang², Yu Li², Dongdong Wu², Zengli Huang², Zhongming Zeng², Xulei Qin¹ qxl@cust.edu.cn, Baoshun Zhang² bszhang2006@sinano.ac.cn

المصدر: Physica Status Solidi - Rapid Research Letters. Apr2024, Vol. 18 Issue 4, p1-6. 6p.

مصطلحات موضوعية: *MODULATION-doped field-effect transistors, *TWO-dimensional electron gas, *GALLIUM nitride, *NITRIDATION, *X-ray photoelectron spectroscopy, *NITROGEN plasmas

المؤلفون: Weining Liu, Guohao Yu, Jiaan Zhou, Zicheng Yu, Xing Wei, Wenxin Tang, Li Zhang, Baoshun Zhang

المصدر: ACS Applied Electronic Materials. 4:897-902

مصطلحات موضوعية: Materials Chemistry, Electrochemistry, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f63fe5856861ad16a30ce322fd2f8234
https://doi.org/10.1021/acsaelm.1c01267

المؤلفون: Yiqiong Zhang, Guohao Yu

المصدر: Application of Big Data, Blockchain, and Internet of Things for Education Informatization ISBN: 9783031239496

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::eefe829b90e19ecac8c9ab371f7ad4de
https://doi.org/10.1007/978-3-031-23950-2_6

المؤلفون: Tiwei Chen, Kai Fu, Wenbo Tang, Baoshun Zhang, Guohao Yu, Yong Cai, Weining Liu, Xin Zhou, Xiaodong Zhang, Yongjian Ma, Xing Wei, Wenxin Tang, Yaming Fan

المصدر: IEEE Sensors Journal. 21:22459-22463

مصطلحات موضوعية: Materials science, Analytical chemistry, Sensitivity (control systems), Plasma, Electrical and Electronic Engineering, Current (fluid), Instrumentation, Current density, Variable-range hopping, Anode, Diode, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c599549fdf9787be61c9c70f76a3d1e2
https://doi.org/10.1109/jsen.2021.3109915