نتائج البحث - "Gu, Chen-Jie"

المساهمون: National Natural Science Foundation of China, National Key Technologies Research and Development Program of China, Shanghai Pujiang Program

المصدر: Nanoscale Research Letters ; volume 13, issue 1 ; ISSN 1931-7573 1556-276X

الاتاحة: http://dx.doi.org/10.1186/s11671-018-2667-2
http://link.springer.com/content/pdf/10.1186/s11671-018-2667-2.pdf
http://link.springer.com/article/10.1186/s11671-018-2667-2/fulltext.html

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4

Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ \overline{2}01 $$\end{document}2¯01) heterojunctions

المؤلفون: Sun, Shun-Ming, Liu, Wen-Jun, Golosov, Dmitriy Anatolyevich, Gu, Chen-Jie, Ding, Shi-Jin

المصدر: Nanoscale Research Letters

مصطلحات موضوعية: β-Ga2O3, Intermediate semiconductor layer, Nano Express, Contacts

URL الوصول: https://explore.openaire.eu/search/publication?articleId=pmid________::59703ae586012ab51c14d1f4e7525933
http://europepmc.org/articles/PMC6694324

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5

Academic Journal

Numerical study on the bubble rising behavior in liquid oxygen under magnetic field

المؤلفون: Zhang, Rui-Ping, Bao, Shi-Ran, Gu, Chen-Jie, Qiu, Li-Min, Zhi, Xiao-Qin, Zhang, Xiao-bin

المساهمون: National Key R&D Program of China, Natural Science Foundation of China

المصدر: Cryogenics ; volume 101, page 43-52 ; ISSN 0011-2275

الاتاحة: http://dx.doi.org/10.1016/j.cryogenics.2019.04.003
https://api.elsevier.com/content/article/PII:S0011227518303898?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0011227518303898?httpAccept=text/plain

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6

Academic Journal

Characteristics and mechanism analysis of Fano resonances in ${\rm{\Pi }}$-shaped gold nano-trimer

المؤلفون: Zhong, Han-Hua, Zhou, Jian-Hong, Gu, Chen-Jie, Wang, Mian, Fang, Yun-Tuan, Xu, Tian, Zhou, Jun

المصدر: Chinese Physics B ; volume 26, issue 12, page 127301 ; ISSN 1674-1056

الاتاحة: http://dx.doi.org/10.1088/1674-1056/26/12/127301
https://iopscience.iop.org/article/10.1088/1674-1056/26/12/127301/pdf
https://iopscience.iop.org/article/10.1088/1674-1056/26/12/127301

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7

Academic Journal

On the evolution of switching oxide traps in the HfO2/TiN gate stack subjected to positive- and negative-bias temperature stressing

المؤلفون: Gao, Yuan, Ang, Diing Shenp, Gu, Chen Jie

المساهمون: School of Electrical and Electronic Engineering

مصطلحات موضوعية: DRNTU::Science::Chemistry::Physical chemistry::Electrochemistry

وصف الملف: application/pdf

Relation: ECS transactions; https://hdl.handle.net/10356/101417; http://hdl.handle.net/10220/18411

الاتاحة: https://hdl.handle.net/10356/101417
http://hdl.handle.net/10220/18411
https://doi.org/10.1149/05303.0205ecst

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8

Academic Journal

Impact of Lanthanum on positive-bias temperature instability - insight from first-principles simulation

المؤلفون: Gu, Chen Jie, Ang, Diing Shenp

المساهمون: School of Electrical and Electronic Engineering

مصطلحات موضوعية: DRNTU::Science::Chemistry::Physical chemistry::Electrochemistry

وصف الملف: application/pdf

Relation: ECS transactions; Gu, C. J., & Ang, D. S. (2013). Impact of Lanthanum on positive-bias temperature instability - insight from first-principles simulation. ECS transactions, 53(3), 193-204.; https://hdl.handle.net/10356/101387; http://hdl.handle.net/10220/18410

الاتاحة: https://hdl.handle.net/10356/101387
http://hdl.handle.net/10220/18410
https://doi.org/10.1149/05303.0193ecst

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