المؤلفون: Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter

المصدر: Frontiers in Materials, Vol 12 (2025)

مصطلحات موضوعية: sputter epitaxy, transition metal nitrides, group III-nitrides, x-ray diffraction, vertical GaN on Si electronics, Technology

وصف الملف: electronic resource

Relation: https://www.frontiersin.org/articles/10.3389/fmats.2025.1507123/full; https://doaj.org/toc/2296-8016

URL الوصول: https://doaj.org/article/c69d132d25854384af8a6cefab84c588

المؤلفون: Armakavicius, Nerijus, Kühne, Philipp, Papamichail, Alexis, Zhang, Hengfang, Knight, Sean, Persson, Axel, Stanishev, Vallery, Chen, Jr Tai, Paskov, Plamen, Schubert, Mathias, Darakchieva, Vanya

المصدر: Materials NanoLund: Centre for Nanoscience. 17(13)

مصطلحات موضوعية: aluminum gallium nitride, aluminum nitride, electrical properties, free charge carriers, gallium nitride, group-III nitrides, HEMT, high-electron-mobility transistor, optical Hall effect, terahertz, Naturvetenskap, Fysik, Den kondenserade materiens fysik, Natural Sciences, Physical Sciences, Condensed Matter Physics

URL الوصول: https://lup.lub.lu.se/record/eefcf85e-145a-4296-8b37-275802cc4a63
http://dx.doi.org/10.3390/ma17133343

المؤلفون: Cardoso, José Pedro de Sousa

مصطلحات موضوعية: Group III-Nitrides, Light-emitting devices, AlGaN, Nanowires, Europium, Ion implantation, InGaN, Quantum Wells, Swift-heavy ions, Ion irradiation, Photoluminescence, Raman spectroscopy

وصف الملف: application/pdf

الاتاحة: http://hdl.handle.net/10773/41507

المؤلفون: Xinye Fan, Jiawang Shi, Yiren Chen, Guoqing Miao, Hong Jiang, Hang Song

المصدر: Micromachines, Vol 15, Iss 10, p 1188 (2024)

مصطلحات موضوعية: light-emitting diodes, group-III nitrides, micro-LEDs, nano-LEDs, luminescence, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/15/10/1188; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/3438a115333d4f36a5ffabb43245186f

المؤلفون: Zhang, Huafan

Thesis Advisors: Ooi, Boon S., Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division, Alshareef, Husam N., Ohkawa, Kazuhiro, Mi, Zetian

مصطلحات موضوعية: Group-III-Nitrides, Nanowires, Membrane, Photoelectrochemistry, Piezotronics

Relation: N/A

الاتاحة: http://hdl.handle.net/10754/691040

المؤلفون: Katharina Lorenz

المصدر: Physics, Vol 4, Iss 2, Pp 548-564 (2022)

مصطلحات موضوعية: group III nitrides, non-polar GaN, nanowires, ion implantation, doping, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2624-8174/4/2/36; https://doaj.org/toc/2624-8174

URL الوصول: https://doaj.org/article/4c17f7b278d24391a1266f289b825c88

المؤلفون: Wooje Cho (4413013), Zirui Zhou (8903816), Ruiming Lin (8049983), Justin C. Ondry (5503673), Dmitri V. Talapin (1235877)

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Microbiology, Molecular Biology, Biotechnology, Ecology, Chemical Sciences not elsewhere classified, physical vapor transport, great technological importance, enable cost reductions, based device integration, 300 ° c, organic surface ligands, group iii nitrides, organic solvent mixtures, molten salt phase, producing crystalline iii, gan nanocrystals produced, biphasic molten salt, biphasic molten, molten salt, crystalline gan, solvent mixture, nitride nanocrystals, colloidal gan, aln nanocrystals, work demonstrates, widely manufactured, viable option

Relation: https://figshare.com/articles/journal_contribution/Synthesis_of_Colloidal_GaN_and_AlN_Nanocrystals_in_Biphasic_Molten_Salt_Organic_Solvent_Mixtures_under_High-Pressure_Ammonia/21841362

الاتاحة: https://doi.org/10.1021/acsnano.2c09552.s001

المؤلفون: Sławomir P. Łepkowski

المصدر: Nanomaterials; Volume 13; Issue 15; Pages: 2212

مصطلحات موضوعية: quantum spin Hall effect, topological insulators, group-III nitrides, coupled quantum wells

وصف الملف: application/pdf

Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano13152212

الاتاحة: https://doi.org/10.3390/nano13152212

المؤلفون: Valentin Jmerik, Vladimir Kozlovsky, Xinqiang Wang

المصدر: Nanomaterials; Volume 13; Issue 14; Pages: 2080

مصطلحات موضوعية: ultraviolet C emission, electron-beam-pumped ultraviolet (UV)C emitters, AlGaN group III-nitrides, low dimensional structures, 2D quantum wells

وصف الملف: application/pdf

Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano13142080

الاتاحة: https://doi.org/10.3390/nano13142080

المؤلفون: Ngo, Thi Huong, Comyn, Rémi, Chenot, Sébastien, Brault, Julien, Nemoz, Maud, Vennéguès, Philippe, Damilano, Benjamin, Vézian, S., Frayssinet, Eric, Cozette, Flavien, Defrance, N., Lecourt, François, Labat, Nathalie, Maher, Hassan, Cordier, Yvon

المساهمون: Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA), Université Côte d'Azur (UniCA), Institut Interdisciplinaire d'Innovation Technologique Sherbrooke (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies et Nanosystèmes Sherbrooke (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), OMMIC, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), This work was supported by French technology facility network RENATECH and the French National Research Agency (ANR) through the projects ED-GaN (ANR-16-CE24-0026) and the “Investissements d’Avenir” program GaNeX (ANR-11-LABX-0014)., Renatech Network, CMNF, ANR-16-CE24-0026,ED-GaN,Co-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération(2016), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)

المصدر: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://hal.science/hal-03741626 ; Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩.

مصطلحات موضوعية: Selective sublimation, Local area epitaxy, Group III-nitrides, High electron mobility transistors, [SPI]Engineering Sciences [physics]

Relation: hal-03741626; https://hal.science/hal-03741626; https://hal.science/hal-03741626/document; https://hal.science/hal-03741626/file/ThiHuongNgo_JCrystalGrowth_AAM_2022.pdf

الاتاحة: https://hal.science/hal-03741626
https://hal.science/hal-03741626/document
https://hal.science/hal-03741626/file/ThiHuongNgo_JCrystalGrowth_AAM_2022.pdf
https://doi.org/10.1016/j.jcrysgro.2022.126779

المؤلفون: Sławomir P. Łepkowski, Abdur Rehman Anwar

المصدر: Nanomaterials; Volume 12; Issue 14; Pages: 2418

مصطلحات موضوعية: topological phase transition, topological insulators, group-III nitrides, double quantum wells

وصف الملف: application/pdf

Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano12142418

الاتاحة: https://doi.org/10.3390/nano12142418

المؤلفون: Armakavicius, Nerijus, Kühne, Philipp, Papamichail, Alexis, Zhang, Hengfang, Knight, Sean, Persson, Axel, Stanishev, Vallery, Chen, Jr-Tai, Paskov, Plamen, Schubert, Mathias, Darakchieva, Vanya

المصدر: Department of Electrical and Computer Engineering: Faculty Publications

مصطلحات موضوعية: electrical properties, free charge carriers, optical Hall effect, terahertz, group-III nitrides, gallium nitride, aluminum nitride, aluminum gallium nitride, high-electron-mobility transistor, HEMT, Computer Engineering, Electrical and Computer Engineering

وصف الملف: application/pdf

Relation: https://digitalcommons.unl.edu/electricalengineeringfacpub/749; https://digitalcommons.unl.edu/context/electricalengineeringfacpub/article/1748/viewcontent/Schubert_MATERIALS_2024_Electronic_properties.pdf

الاتاحة: https://digitalcommons.unl.edu/electricalengineeringfacpub/749
https://digitalcommons.unl.edu/context/electricalengineeringfacpub/article/1748/viewcontent/Schubert_MATERIALS_2024_Electronic_properties.pdf

المؤلفون: Cardoso, José Pedro de Sousa

المساهمون: Correia, Maria do Rosário Pimenta, Sedrine, Nabiha Ben

مصطلحات موضوعية: Group III-Nitrides, Light-emitting devices, AlGaN, Nanowires, Europium, Ion implantation, InGaN, Quantum Wells, Swift-heavy ions, Ion irradiation, Photoluminescence, Raman spectroscopy

Relation: info:eu-repo/grantAgreement/FCT//PD%2FBD%2F142780%2F2018/PT; info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDP%2F50025%2F2020/PT; info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F50025%2F2020/PT; info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/LA%2FP%2F0037%2F2020/PT; info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC%2FCTM-CTM%2F3553%2F2020/PT; EdtlB.18-DFis/2022_8242; EdtlB.38-DFis/2022_30302; http://hdl.handle.net/10773/41507

الاتاحة: http://hdl.handle.net/10773/41507

المؤلفون: Knauer, Arne, Mogilatenko, Anna, Weinrich, Jonas, Hagedorn, Sylvia, Walde, Sebastian, Kolbe, Tim, Cancellara, Leonardo, Weyers, Markus

مصطلحات موضوعية: dislocations, group-III nitrides, substrate curvature, UV LED

Time: 540, 660

وصف الملف: application/pdf

الاتاحة: https://oa.tib.eu/renate/handle/123456789/6492
https://doi.org/10.34657/5539

المؤلفون: Kirste, Ronny, Mohn, Stefan, Wagner, Markus R., Reparaz, Juan S., Hoffmann, Axel

مصطلحات موضوعية: 530 Physik, phonon-plasmon-coupling, ternary group-III-nitrides, Raman spectroscopy

وصف الملف: application/pdf

Relation: https://depositonce.tu-berlin.de/handle/11303/10854; http://dx.doi.org/10.14279/depositonce-9749

الاتاحة: https://depositonce.tu-berlin.de/handle/11303/10854
https://doi.org/10.14279/depositonce-9749

المؤلفون: Papadimitriou, Dimitra N.

مصطلحات موضوعية: 530 Physik, group-III nitrides, polarization fields, PIN-Diodes, electroreflectance, electroluminescence

وصف الملف: application/pdf

Relation: https://depositonce.tu-berlin.de/handle/11303/10806; http://dx.doi.org/10.14279/depositonce-9699

الاتاحة: https://depositonce.tu-berlin.de/handle/11303/10806
https://doi.org/10.14279/depositonce-9699

المؤلفون: Fernandez-Garrido, Sergio, Ramsteiner, Manfred, Galves, Lauren A., Sinito, Chiara, Corfdir, Pierre, Schiaber, Ziani de Souza, Lopes, Joao Marcelo J., Geelhaar, Lutz, Brandt, Oliver, Chyi, J. I., Fujioka, H., Morkoc, H.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: group-III nitrides, III-V semiconductors, nanowire, polarity junction, polarity inversion, polarity-induced selective area epitaxy

Relation: Gallium Nitride Materials And Devices Xiii; http://dx.doi.org/10.1117/12.2288233; Gallium Nitride Materials And Devices Xiii. Bellingham: Spie-int Soc Optical Engineering, v. 10532, 11 p., 2018.; http://hdl.handle.net/11449/186320; WOS:000452798100018

الاتاحة: http://hdl.handle.net/11449/186320
https://doi.org/10.1117/12.2288233

المؤلفون: Aiyoshi Inoue, Kosuke Yamamoto, Makoto Miyoshi, Sakura Tanaka, Takashi Egawa, 三好 実人, 井上 暁喜, 山本 皓介, 江川 孝志, 田中 さくら

المصدر: JSAP Annual Meetings Extended Abstracts. 2021, :2439

المؤلفون: Akiyoshi Inoue, Hiroki Harada, Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, 三好 実人, 井上 暁喜, 原田 紘希, 山中 瑞樹, 江川 孝志

المصدر: JSAP Annual Meetings Extended Abstracts. 2021, :2438

المؤلفون: Dimitra N. Papadimitriou

المصدر: Applied Sciences; Volume 10; Issue 1; Pages: 232

مصطلحات موضوعية: group-III nitrides, polarization fields, PIN-Diodes, electroreflectance, electroluminescence

جغرافية الموضوع: agris

وصف الملف: application/pdf

Relation: Optics and Lasers; https://dx.doi.org/10.3390/app10010232

الاتاحة: https://doi.org/10.3390/app10010232