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1Academic Journal
المؤلفون: Hou, Q, Fonseka, HA, Martelli, F, Paci, B, Gustafsson, A, Gott, JA, Yang, H, Huo, S, Yu, X, Chen, L, Chu, Y, Zha, C, Zhang, Z, Zhang, L, Shang, F, Fang, W, Cheng, Z, Sanchez, AM, Liu, H, Zhang, Y
المصدر: ACS Applied Nano Materials , 6 (13) pp. 11465-11471. (2023)
مصطلحات موضوعية: Science & Technology, Technology, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Science & Technology - Other Topics, Si doping, zinc blende structure, wurtzitestructure, nanowire, doping efficiency, crystal-phase devices, N-TYPE, EMISSION
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/10175504/1/Liu_Si%20doping-ACS%20Applied%20Nano%20Materials-final.pdf; https://discovery.ucl.ac.uk/id/eprint/10175504/
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2Academic Journal
المؤلفون: Chen, C, Chu, Y, Zhang, L, Lin, H, Fang, W, Zhang, Z, Zha, C, Wang, K, Yang, H, Yu, X, Gott, JA, Aagesen, M, Cheng, Z, Huo, S, Liu, H, Sanchez, AM, Zhang, Y
المصدر: Journal of Physical Chemistry Letters , 14 (19) pp. 4433-4439. (2023)
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/10171033/1/acs.jpclett.3c00484.pdf; https://discovery.ucl.ac.uk/id/eprint/10171033/
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3Academic Journal
المؤلفون: Boras, G, Yu, X, Fonseka, HA, Davis, G, Velichko, AV, Gott, JA, Zeng, H, Wu, S, Parkinson, P, Xu, X, Mowbray, D, Sanchez, AM, Liu, H
المصدر: The Journal of Physical Chemistry C (2021) (In press).
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/10130347/7/acs.jpcc.1c03680.pdf; https://discovery.ucl.ac.uk/id/eprint/10130347/
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4Academic Journal
المؤلفون: Zhang, Y, Velichko, AV, Fonseka, HA, Parkinson, P, Gott, JA, Davis, G, Aagesen, M, Sanchez, AM, Mowbray, D, Liu, H
المصدر: Nano Letters (2021) (In press).
مصطلحات موضوعية: axially stacked quantum dots, carrier confinement, defect-free crystal, exciton−biexciton splitting, long-term stability, nanowire
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/10105445/7/Huo_Defect-Free%20Axially%20Stacked%20GaAs%3AGaAsP%20Nanowire%20Quantum%20Dots%20with%20Strong%20Carrier%20Confinement_AOP.pdf; https://discovery.ucl.ac.uk/id/eprint/10105445/
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5Academic Journal
المؤلفون: Fonseka, HA, Zhang, Y, Gott, JA, Beanland, R, Liu, H, Sanchez, AM
المصدر: Nano Research (2020) (In press).
مصطلحات موضوعية: compound semiconductor alloys, radial segregations, three-fold symmetry, surface chemical potential
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/10111993/1/Fonseka2020_Article_MultipleRadialPhosphorusSegreg.pdf; https://discovery.ucl.ac.uk/id/eprint/10111993/
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6Academic Journal
المؤلفون: Gott, JA, Beanland, R, Fonseka, HA, Peters, JJP, Zhang, Y, Liu, H, Sanchez, AM
المصدر: Nano Letters , 19 (7) pp. 4574-4580. (2019)
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/10080694/10/Zhang%20Gott%20et%20al_NL_SubmitVersion.pdf; https://discovery.ucl.ac.uk/id/eprint/10080694/5/Zhang%20Gott%20et%20al_NL_SI_SubmitVersion.pdf; https://discovery.ucl.ac.uk/id/eprint/10080694/
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7Academic Journal
المؤلفون: Fonseka, HA, Velichko, AV, Zhang, Y, Gott, JA, Davis, GD, Beanland, R, Liu, H, Mowbray, DJ, Sanchez, AM
المصدر: Nano Letters , 19 (6) pp. 4158-4165. (2019)
مصطلحات موضوعية: nanowire quantum wires, nanowire quantum dots, GaAsP nanowires
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/10080695/1/Fonseka_Self%20formed%20Q%20structures-2.pdf; https://discovery.ucl.ac.uk/id/eprint/10080695/7/SI-Fonseka_Self%20formed%20Q%20structures.pdf; https://discovery.ucl.ac.uk/id/eprint/10080695/
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8Academic Journal
المؤلفون: Zhang, Y, Davis, G, Fonseka, HA, Velichko, A, Gustafsson, A, Godde, T, Saxena, D, Aagesen, M, Parkinson, PW, Gott, JA, Huo, S, Sanchez, AM, Mowbray, DJ, Liu, H
المصدر: ACS Nano , 13 (5) pp. 5931-5938. (2019)
مصطلحات موضوعية: III−V−V, carrier collection, carrier confinement, laser, nanowire, quantum well
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/10074089/1/acsnano.9b01775%20%281%29.pdf; https://discovery.ucl.ac.uk/id/eprint/10074089/
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9Academic Journal
المؤلفون: Zhang, Y, Sanchez, AM, Aagesen, M, Huo, S, Fonseka, HA, Gott, JA, Kim, D, Yu, X, Chen, X, Xu, J, Li, T, Zeng, H, Boras, G, Liu, H
المصدر: Small , 15 (3) , Article 1803684. (2019)
مصطلحات موضوعية: Contacts, devices, nanowires, photovoltaics, radial p-i-n junctions
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/10065120/3/Zhang%20Growth%20and%20fabrication%20of%20high-quality%20single%20nanowire%20devices%20with%20radial%20published.pdf; https://discovery.ucl.ac.uk/id/eprint/10065120/
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10Report
المؤلفون: Fonseka, HA, Velichko, AV, Zhang, Y, Davis, GD, Gott, JA, Godde, T, Sanchez, AM, Beanland, R, Liu, H, Mowbray, DJ
المصدر: In: Proceedings of SPIE - Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII. SPIE: San Francisco, CA, USA. (2020)
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/10097383/1/112910J.pdf; https://discovery.ucl.ac.uk/id/eprint/10097383/
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11Academic Journal
المؤلفون: Sanchez, AM, Gott, JA, Fonseka, HA, Zhang, Y, Liu, H, Beanland, R
المصدر: Nano Letters , 18 (5) pp. 3081-3087. (2018)
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/10059742/1/Stable%20Defects%20in%20Semiconductor%20Nanowires.pdf; https://discovery.ucl.ac.uk/id/eprint/10059742/
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12Academic Journal
المؤلفون: Zhang, Y, Fonseka, HA, Aagesen, M, Gott, JA, Sanchez, AM, Wu, J, Kim, D, Jurczak, P, Huo, S, Liu, H
المصدر: Nano Letters , 17 (8) pp. 4946-4950. (2017)
مصطلحات موضوعية: beryllium doping, Nanowire, pure zinc-blende, self−catalyzed, shell
وصف الملف: text
Relation: https://discovery.ucl.ac.uk/id/eprint/1575632/1/acs.nanolett.7b02063.pdf; https://discovery.ucl.ac.uk/id/eprint/1575632/
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13Academic Journal
المؤلفون: Gott, JA, Liley, DTJ, Hobson, JA
Relation: Gott, J. A., Liley, D. T. J. & Hobson, J. A. (2017). Towards a Functional Understanding of PGO Waves. FRONTIERS IN HUMAN NEUROSCIENCE, 11, https://doi.org/10.3389/fnhum.2017.00089.; http://hdl.handle.net/11343/257260
الاتاحة: http://hdl.handle.net/11343/257260
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14Academic Journal
المؤلفون: Pogue-Geile, KL, Gott, JA, Greenberger, JS
المصدر: Leukemia ; volume 12, issue 1, page 4-12 ; ISSN 0887-6924 1476-5551
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