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    Conference

    المؤلفون: Wang, ZL, Zhao, QT, Li, MY, Gong, XJ

    المساهمون: Wang, ZL (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Shantou Univ, Ctr Sci Res, Shantou 515063, Guangdong, Peoples R China.

    المصدر: EI ; SCI

    مصطلحات موضوعية: ion, defect-engineering, leakage current, IMPLANTATION, SILICON, LAYERS

    Relation: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS.1998/2/1,135(280-284).; 790167; http://hdl.handle.net/20.500.11897/152184; WOS:000074395300051