يعرض 1 - 20 نتائج من 271 نتيجة بحث عن '"Goldsman, N"', وقت الاستعلام: 0.62s تنقيح النتائج
  1. 1
    Academic Journal
    Comparison of contact metals evaporated onto monolayer molybdenum disulfide.

    المؤلفون: Mazzoni, A., Burke, R., Chin, M., Najmaei, S., Dubey, M., Goldsman, N., Daniels, K.

    المصدر: Journal of Applied Physics; 12/14/2022, Vol. 132 Issue 22, p1-11, 11p

    مصطلحات موضوعية: CHEMICAL vapor deposition, FIELD-effect devices, MONOMOLECULAR films, FIELD-effect transistors, MOLYBDENUM disulfide, MOLYBDENUM sulfides, METALS


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  2. 2
    Report
    Compact Modeling of 0.35 micron SOI CMOS Technology Node for 4 K DC Operation using Verilog-A

    المؤلفون: Akturk, A., Eng, K., Hamlet, J., Potbhare, S., Longoria, E., Young, R., Peckerar, M., Gurrieri, T., Carroll, M. S., Goldsman, N.

    مصطلحات موضوعية: Condensed Matter - Materials Science

    URL الوصول: http://arxiv.org/abs/1001.3353

    View record in Arxiv

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  3. 3
    Report
    Deformation Potential Carrier-Phonon Scattering in Semiconducting Carbon Nanotube Transistors

    المؤلفون: Pennington, G., Akturk, A., Goldsman, N., Wickenden, A.

    مصطلحات موضوعية: Condensed Matter - Materials Science

    URL الوصول: http://arxiv.org/abs/cond-mat/0610777

    View record in Arxiv

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  4. 4
    Academic Journal
    Effects of Fermi pinning and quantum mechanisms on leakage current of 4H-SiC Schottky diodes.

    المؤلفون: Baum, I., Darmody, C., Cui, Y., Goldsman, N.

    المصدر: Journal of Applied Physics; 1/21/2022, Vol. 131 Issue 3, p1-8, 8p

    مصطلحات موضوعية: SCHOTTKY barrier diodes, FLUX pinning, STRAY currents, ACTIVATION energy, QUANTUM theory, MAGNITUDE (Mathematics)


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  5. 5
    Academic Journal
    Incomplete ionization in aluminum-doped 4H-silicon carbide.

    المؤلفون: Darmody, C.1 (AUTHOR) cdarmody@umd.edu, Goldsman, N.1 (AUTHOR) neil@umd.edu

    المصدر: Journal of Applied Physics. 10/14/2019, Vol. 126 Issue 14, p1-12. 12p. 1 Diagram, 1 Chart, 7 Graphs.

    مصطلحات موضوعية: *IONIZATION energy, *DENSITY of states, *CARBIDES, *HIGH temperatures, *SILICON carbide


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  6. 6
    Academic Journal
    Effects of volumetric and potential energy change on indirect to direct bandgap transition of Ge/Sn alloy.

    المؤلفون: Xiao, Z.1, Goldsman, N.1, Dhar, N. K.2

    المصدر: Journal of Applied Physics. 2019, Vol. 125 Issue 13, pN.PAG-N.PAG. 8p. 4 Charts, 5 Graphs.

    مصطلحات موضوعية: *POTENTIAL energy, *GERMANIUM alloys, *BAND gaps, *DARK currents (Electric), *SIGNAL-to-noise ratio, *ELECTRONIC band structure


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  7. 7
    Academic Journal
    The intrinsic atomic-level surface roughness mobility limit of 4H-SiC.

    المؤلفون: Darmody, C.1, Goldsman, N.1

    المصدر: Journal of Applied Physics. 2018, Vol. 124 Issue 10, pN.PAG-N.PAG. 9p. 3 Diagrams, 2 Charts, 4 Graphs.

    مصطلحات موضوعية: *SURFACE roughness, *SCATTERING (Physics), *SURFACES (Technology), *ATOMIC structure, *ATOMIC physics


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  8. 8
    Book
    Modeling Carbon Nanotube Electron-Phonon Resonances Shows Terahertz Current Oscillations

    المؤلفون: Akturk, A., Goldsman, N., Pennington, G.

    المصدر: Simulation of Semiconductor Processes and Devices 2007 ; page 225-228 ; ISBN 9783211728604

    الاتاحة: https://doi.org/10.1007/978-3-211-72861-1_53
    http://link.springer.com/content/pdf/10.1007/978-3-211-72861-1_53.pdf

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  9. 9
    Book
    Transient Characterization of Interface Traps in 4H-SiC MOSFETs

    المؤلفون: Potbharel, S., Goldsman, N., Pennington, G., Akturk, A., Lelis, A.

    المصدر: Simulation of Semiconductor Processes and Devices 2007 ; page 177-180 ; ISBN 9783211728604

    الاتاحة: https://doi.org/10.1007/978-3-211-72861-1_42
    http://link.springer.com/content/pdf/10.1007/978-3-211-72861-1_42.pdf

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  10. 10
    Academic Journal
    Design and testing of a self-powered 3D integrated SOI CMOS system

    المؤلفون: Dilli, Z., Goldsman, N., Peckerar, M., Akturk, A., Metze, G.

    المصدر: Microelectronic Engineering ; volume 85, issue 2, page 388-394 ; ISSN 0167-9317

    الاتاحة: https://doi.org/10.1016/j.mee.2007.07.013
    https://api.elsevier.com/content/article/PII:S016793170700648X?httpAccept=text/xml
    https://api.elsevier.com/content/article/PII:S016793170700648X?httpAccept=text/plain

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  11. 11
    Report
    Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

    المؤلفون: Lauenstein, J.-M, Goldsman, N, Liu, S, Titus, J, Ladbury, R. L, Kim, H. S, Phan, A. M, Zafrani, M, Sherman, P

    مصطلحات موضوعية: Electronics And Electrical Engineering

    URL الوصول: https://ntrs.nasa.gov/citations/20110007877

    View record in NASA Technical Reports

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  12. 12
    Report
    Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

    المؤلفون: Lauenstein, J. M, Ladbury, R. L, Batchelor, D. A, Goldsman, N, Kim, H. S, Phan, A. M

    المصدر: IEEE Transactions on Nuclear Science. 57(6)

    مصطلحات موضوعية: Spacecraft Design, Testing And Performance

    Relation: Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

    URL الوصول: https://ntrs.nasa.gov/citations/20110015431

    View record in NASA Technical Reports

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  13. 13
    Academic Journal
    Spherical Harmonic Modeling of a 0.05 μmBase BJT: A Comparison with Monte Carloand Asymptotic Analysis

    المؤلفون: Chang, C.-H., Lin, C.-K., Goldsman, N., Mayergoyz, I. D.

    المصدر: VLSI Design ; volume 8, issue 1-4, page 147-151 ; ISSN 1065-514X 1563-5171

    الاتاحة: http://dx.doi.org/10.1155/1998/59191
    http://downloads.hindawi.com/archive/1998/059191.pdf
    https://onlinelibrary.wiley.com/doi/pdf/10.1155/1998/59191

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  14. 14
    Academic Journal
    Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices

    المؤلفون: Akturk, A., McGarrity, J. M., Goldsman, N., Lichtenwalner, D. J., Hull, B., Grider, D., Wilkins, R.

    المصدر: IEEE Transactions on Nuclear Science ; volume 66, issue 7, page 1828-1832 ; ISSN 0018-9499 1558-1578

    الاتاحة: http://dx.doi.org/10.1109/tns.2019.2919334
    http://xplorestaging.ieee.org/ielx7/23/8764676/08723401.pdf?arnumber=8723401

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  15. 15
    Academic Journal
    Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces.

    المؤلفون: Ettisserry, D. P.1 deva@umd.edu, Goldsman, N.1,2, Akturk, A.1,2, Lelis, A. J.3

    المصدر: Journal of Applied Physics. 2014, Vol. 116 Issue 17, p174502-1-174502-7. 7p. 5 Diagrams, 4 Graphs.

    مصطلحات موضوعية: *PASSIVATION, *ANNEALING of metals, *CARBON oxides, *SILICON, *LATTICE theory, *CARBOXYL group, *DENSITY functional theory


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  16. 16
    Academic Journal
    A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors.

    المؤلفون: Ettisserry, D. P.1 deva@umd.edu, Goldsman, N.1, Lelis, A.2

    المصدر: Journal of Applied Physics. 2014, Vol. 115 Issue 10, p103706-1-103706-8. 8p. 2 Diagrams, 2 Charts, 4 Graphs.

    مصطلحات موضوعية: *SILICON carbide, *ELECTRIC properties, *METAL oxide semiconductor field-effect transistors, *DENSITY functional theory, *DRIFT diffusion models, *AB-initio calculations


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  17. 17
    Academic Journal
    Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes

    المؤلفون: Akturk, A., McGarrity, J. M., Goldsman, N., Lichtenwalner, D., Hull, B., Grider, D., Wilkins, R.

    المصدر: IEEE Transactions on Nuclear Science ; volume 65, issue 6, page 1248-1254 ; ISSN 0018-9499 1558-1578

    الاتاحة: http://dx.doi.org/10.1109/tns.2018.2833741
    http://xplorestaging.ieee.org/ielx7/23/8384063/08355686.pdf?arnumber=8355686

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  18. 18
    Academic Journal
    The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface.

    المؤلفون: Salemi, S.1, Goldsman, N.2, Ettisserry, D. P.2, Akturk, A.2, Lelis, A.3

    المصدر: Journal of Applied Physics. Feb2013, Vol. 113 Issue 5, p053703. 6p. 7 Diagrams.

    مصطلحات موضوعية: *SILICON carbide, *SILICA, *SURFACE defects, *INTERFACES (Physical sciences), *DENSITY functionals


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  19. 19
    Academic Journal
    Simulation of electron transport in (0001) and [formula] 4H-SiC inversion layers.

    المؤلفون: Pennington, G.1, Goldsman, N.1

    المصدر: Journal of Applied Physics. Sep2009, Vol. 106 Issue 6, p063701-1-063701-13. 13p. 2 Diagrams, 1 Chart, 14 Graphs.

    مصطلحات موضوعية: *SEMICONDUCTOR research, *FIELD-effect transistors, *SILICON carbide, *ELECTRON transport, *MONTE Carlo method, *SIMULATION methods & models, *PHONONS


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  20. 20
    Academic Journal
    Ion implantation and SiC transistor performance.

    المؤلفون: Gurfinkel, M., Potbhare, S., Xiong, H. D., Suehle, J. S., Shapira, Yoram, Lelis, A. J., Habersat, D., Goldsman, N.

    المصدر: Journal of Applied Physics; Apr2009, Vol. 105 Issue 8, p084511-084515, 4p, 1 Chart, 4 Graphs

    مصطلحات موضوعية: ION implantation, SILICON carbide, TRANSISTORS, ELECTRON mobility, METAL oxide semiconductor field-effect transistors, NITRIC oxide, ANNEALING of crystals


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