المؤلفون: Gibis, R, Kizuki, H, Albrecht, P, Harde, P, Urmann, G, Kaiser, R, Künzel, H

المصدر: Journal of Crystal Growth ; volume 209, issue 2-3, page 463-470 ; ISSN 0022-0248

الاتاحة: https://doi.org/10.1016/s0022-0248(99)00599-0
https://api.elsevier.com/content/article/PII:S0022024899005990?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024899005990?httpAccept=text/plain

المؤلفون: Bach, H.-G., Mekonnen, G.G., Kunkel, R., Schmidt, D., Gibis, R., Ebert, W., Seeger, A., Stollberg, M., Schlaak, W.

Time: 621

Relation: Optical Fiber Communication Conference (OFC) 2004; Optical Fiber Communication Conference, Technical Digest. CD; https://publica.fraunhofer.de/handle/publica/347210

الاتاحة: https://publica.fraunhofer.de/handle/publica/347210

المؤلفون: Kunzel, H., Ebert, S., Gibis, R., Harde, P., Kaiser, R., Kizuki, H., Malchow, S.

المصدر: Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) ; volume 28, page 571-574

الاتاحة: http://dx.doi.org/10.1109/iciprm.1998.712656
http://xplorestaging.ieee.org/ielx4/5679/15205/00712656.pdf?arnumber=712656

المؤلفون: Kaiser, R., Hamacher, M., Heidrich, H., Albrecht, P., Ebert, W., Gibis, R., Kunzel, H., Loffler, R., Malchow, S., Mohrle, M., Rehbein, W., Schroeter-Janssen, H.

المصدر: Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) ; volume 2, page 431-434

الاتاحة: http://dx.doi.org/10.1109/iciprm.1998.712496
http://xplorestaging.ieee.org/ielx4/5679/15205/00712496.pdf?arnumber=712496

المؤلفون: Kunzel, H., Gibis, R., Kaiser, R., Malchow, S., Schelhase, S.

المصدر: Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ; page 551-554

الاتاحة: http://dx.doi.org/10.1109/iciprm.2001.929208
http://xplorestaging.ieee.org/ielx5/7389/20085/00929208.pdf?arnumber=929208

المؤلفون: Kunzel, H., Albrecht, P., Ebert, S., Gibis, R., Harde, P., Kaiser, R., Kizuki, H., Malchow, S.

المصدر: Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials ; page 432-435

الاتاحة: http://dx.doi.org/10.1109/iciprm.1997.600186
http://xplorestaging.ieee.org/ielx3/4783/13228/00600186.pdf?arnumber=600186

المؤلفون: Kunzel, H., Gibis, R., Kaiser, R., Malchow, S., Schelhase, S.

مصطلحات موضوعية: chemical beam epitaxial growth, iii-v semiconductors, indium compounds, semiconductor epitaxial layers, semiconductor growth, monolithic integration, InP optoelectronic device, selective mombe deposition, selective infill growth, selective area growth, butt coupling, active laser device, electro-optic waveguide device, passive waveguide device, photonic integrated circuit, inp

Time: 621

Relation: International Conference on Indium Phosphide and Related Materials (IPRM) 2001; International Conference on Indium Phosphide and Related Materials, 13th IPRM 2001. Conference proceedings; https://publica.fraunhofer.de/handle/publica/338946

الاتاحة: https://publica.fraunhofer.de/handle/publica/338946
https://doi.org/10.1109/ICIPRM.2001.929208

المؤلفون: Kaiser, R., Hamacher, M., Heidrich, H., Albrecht, P., Ebert, W., Gibis, R., Künzel, H., Löffler, R., Malchow, S., Möhrle, M., Rehbein, W., Schroeter-Janssen, H.

مصطلحات موضوعية: iii-v semiconductors, indium compounds, integrated optics, integrated optoelectronics, optical communication equipment, transceivers, wavelength division multiplexing, monolithically integrated transceivers, photonic integrated circuits, generic integration concept, wdm transceiver modules, inp

Time: 621

Relation: International Conference on Indium Phosphide and Related Materials (IPRM) 1998; Tenth International Conference on Indium Phosphide and Related Materials 1998. Conference proceedings; https://publica.fraunhofer.de/handle/publica/331755

الاتاحة: https://publica.fraunhofer.de/handle/publica/331755
https://doi.org/10.1109/ICIPRM.1998.712496

المؤلفون: Kunzel, H., Ebert, S., Gibis, R., Harde, P., Kaiser, R., Kizuki, H., Malchow, S.

مصطلحات موضوعية: chemical beam epitaxial growth, gallium arsenide, gallium compounds, iii-v semiconductors, indium compounds, iron, optical planar waveguides, secondary ion mass spectra, semiconductor epitaxial layers, semiconductor growth, semiconductor lasers, surface cleaning, selective area mombe regrowth, laser/waveguide integration, photonic ic, selective deposition, passive optical waveguide structures, butt coupling, active laser waveguide, masked laser surfaces, v/iii ratio, lateral interface, growth temperature, semi-insulating fe doped waveguides, sims, indiffusion, fabry-perot lasers, threshold current, 485 degc

Time: 621

Relation: International Conference on Indium Phosphide and Related Materials (IPRM) 1998; Tenth International Conference on Indium Phosphide and Related Materials 1998. Conference proceedings; https://publica.fraunhofer.de/handle/publica/331756

الاتاحة: https://publica.fraunhofer.de/handle/publica/331756
https://doi.org/10.1109/ICIPRM.1998.712656

المؤلفون: Kunzel, H., Ebert, S., Gibis, R., Kaiser, R., Kizuki, H., Malchow, S.

مصطلحات موضوعية: desorption, etching, gallium arsenide, iii-v semiconductors, indium compounds, integrated optics, interface structure, joining processes, masks, molecular beam epitaxial growth, optical couplers, optical fabrication, optical waveguides, semiconductor growth, semiconductor lasers, selective mombe growth, lateral interface, waveguide/laser butt-joints, InP-GaInAsP optical waveguide structure, butt coupling, double heterostructure laser, growth temperature, sinx mask, laser mesa, native oxide desorption, growth conditions, v/iii-ratio, undercut etching, uniform waveguide deposition, mesa edge

Time: 621

Relation: European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques (EW MOVPE) 1997; EW MOVPE VII, 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques 1997. Workshop booklet; https://publica.fraunhofer.de/handle/publica/329545

الاتاحة: https://publica.fraunhofer.de/handle/publica/329545

المؤلفون: Kunzel, H., Albrecht, P., Ebert, S., Gibis, R., Harde, P., Kaiser, R., Kizuki, H., Malchow, S.

مصطلحات موضوعية: chemical beam epitaxial growth, doping profiles, electrical resistivity, gallium arsenide, iii-v semiconductors, indium compounds, integrated optics, iron, optical fabrication, optical losses, optical waveguides, photoluminescence, secondary ion mass spectra, semiconductor doping, semiconductor growth, integrated photonic devices, mombe growth, semi-insulating GaInAsP, effusion cell, growth temperature, doping concentration, electrical properties, optical properties, high optical quality, excitonic emission, resistivities, sims measurements, homogeneous incorporation behaviour, fe doping, GaInAsP/InP waveguide structures

Time: 621

Relation: International Conference on Indium Phosphide and Related Materials (IPRM) 1997; International Conference on Indium Phosphide and Related Materials, IPRM, 1997. Conference proceedings; https://publica.fraunhofer.de/handle/publica/329536

الاتاحة: https://publica.fraunhofer.de/handle/publica/329536

المؤلفون: Gibis, R., Schelhase, S., Steingrüber, R., Urmann, G., Kunzel, H., Thiel, S., Stier, O., Bimberg, D.

مصطلحات موضوعية: electron beam lithography, gallium arsenide, iii-v semiconductors, indium compounds, molecular beam epitaxial growth, photoluminescence, scanning electron microscopy, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum dots, sputter etching, quantum dot formation, quantum wells, epitaxial infill regrowth, hole array, reactive ion etching, metalorganic molecular beam epitaxy, selective infill growth, vertical growth rate, coherent growth effects, edge effects, SEM, 30 to 100 nm, InP-(gain)As

Time: 621, 548

Relation: International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE) 1999; Journal of Crystal Growth; https://publica.fraunhofer.de/handle/publica/198418

الاتاحة: https://publica.fraunhofer.de/handle/publica/198418
https://doi.org/10.1016/S0022-0248(99)00605-3

المؤلفون: Harde, P., Gibis, R., Kaiser, R., Kizuki, H., Kunzel, H.

مصطلحات موضوعية: buried layers, chemical beam epitaxial growth, gallium arsenide, gallium compounds, iii-v semiconductors, indium compounds, iron, scanning electron microscopy, secondary ion mass spectra, semiconductor doping, semiconductor growth, semiconductor lasers, waveguide junctions, Fe spatial distribution, metalorganic MBE, laterally resolved sims, laterally resolved secondary ion mass spectra, selective regrowth, selective epitaxy, MOMBE, metal-organic molecular beam epitaxy, SEM, Fe incorporation, waveguide structure, buried heterostructure laser, epitaxial layers

Time: 621, 548

Relation: International Conference on Molecular Beam Epitaxy 1998; Journal of Crystal Growth; https://publica.fraunhofer.de/handle/publica/196110

الاتاحة: https://publica.fraunhofer.de/handle/publica/196110
https://doi.org/10.1016/S0022-0248(98)01454-7

المؤلفون: Kunzel, H., Albrecht, P., Ebert, S., Gibis, R., Harde, P., Kaiser, R., Kizuki, H., Malchow, S.

مصطلحات موضوعية: chemical beam epitaxial growth, electrical resistivity, gallium arsenide, gallium compounds, iii-v semiconductors, indium compounds, integrated optoelectronics, iron, optical losses, optical waveguides, secondary ion mass spectra, semiconductor doping, semiconductor growth, metalorganic molecular beam epitaxial growth, mombe, integrated photonic devices, iron doping, elemental source material, effusion cell, semi-insulating optical waveguides, secondary ion mass spectroscopy, incorporation behaviour, resistivities, doping levels, GaInAsP/InP waveguide structures, 1.05 mum, 1e9 ohmcm, 485 c, 5e7 ohmcm

Time: 621

Relation: Applied Physics Letters; https://publica.fraunhofer.de/handle/publica/193913

الاتاحة: https://publica.fraunhofer.de/handle/publica/193913
https://doi.org/10.1063/1.121537

المؤلفون: Schelhase, S., Bottcher, J., Gibis, R., Harde, P., Paraskevopoulos, A., Kunzel, H.

مصطلحات موضوعية: buried layers, chemical beam epitaxial growth, heterojunction bipolar transistors, iii-v semiconductors, indium compounds, semiconductor epitaxial layers, semiconductor growth, silicon, metalorganic molecular beam epitaxy, buried collector double heterostructure bipolar transistor, selective infill growth, substrate groove, reactive ion etching, lateral interface, stack morphology, embedded subcollector, MBE regrowth, facet formation

Time: 621, 533

Relation: Journal of vacuum science and technology B. Microelectronics and nanometer structures; https://publica.fraunhofer.de/handle/publica/193902

الاتاحة: https://publica.fraunhofer.de/handle/publica/193902
https://doi.org/10.1116/1.589781

المؤلفون: Kuenzel, H., Ebert, S., Gibis, R., Kaiser, R., Kizuki, H., Malchow, S., Urmann, G.

مصطلحات موضوعية: chemical beam epitaxial growth, gallium arsenide, gallium compounds, iii-v semiconductors, indium compounds, optical planar waveguides, scanning electron microscopy, semiconductor epitaxial layers, semiconductor growth, waveguide lasers, indium phosphide, passive optical waveguide structure, butt coupling, active laser waveguide, selective deposition, organic molecular beam epitaxy regrowth, oxide desorption, growth temperature, temperature dependence, growth rate, threshold current, photonic integration, sem, 485 c, 980 micron, InP-GaInAsP

Time: 621, 548

Relation: Journal of Crystal Growth; https://publica.fraunhofer.de/handle/publica/193919

الاتاحة: https://publica.fraunhofer.de/handle/publica/193919
https://doi.org/10.1016/S0022-0248(98)00429-1

المؤلفون: Kuenzel, H., Gibis, R., Kizuki, H., Albrecht, P., Ebert, S., Harde, P., Malchow, S., Kaiser, R.

مصطلحات موضوعية: chemical beam epitaxial growth, etching, gallium arsenide, iii-v semiconductors, indium compounds, integrated optics, iron, optical waveguides, photoluminescence, scanning electron microscopy, secondary ion mass spectra, semiconductor doping, semiconductor epitaxial layers, semiconductor lasers, surface structure, x-ray diffraction, mombe, metal-organic molecular beam epitaxy, integrated photonic ic, waveguide layer structures, crystalline properties, optical properties, optical losses, dry etching, doping, selective area deposition, growth temperature, masked laser layer stack, sem, xrd

Time: 621, 548

Relation: International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE) 1997; Journal of Crystal Growth; https://publica.fraunhofer.de/handle/publica/193926

الاتاحة: https://publica.fraunhofer.de/handle/publica/193926

المؤلفون: Künzel, H, Gibis, R, Kizuki, H, Albrecht, P, Ebert, S, Harde, P, Malchow, S, Kaiser, R

المصدر: Journal of Crystal Growth ; volume 188, issue 1-4, page 281-287 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/s0022-0248(98)00042-6
https://api.elsevier.com/content/article/PII:S0022024898000426?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024898000426?httpAccept=text/plain

المؤلفون: Schelhase, S., Boettcher, J., Gibis, R., Kuenzel, H., Paraskevopoulos, A.

مصطلحات موضوعية: chemical beam epitaxial growth, gallium arsenide, iii-v semiconductors, indium compounds, interface structure, scanning electron microscopy, semiconductor doping, semiconductor epitaxial layers, semiconductor growth, silicon, surface topography, selective infill growth, MOMBE, large area regrowth, temperature dependence, v iii ratio effects, surface morphology, growth optimization, growth boundaries, orientation dependent diffusion, facet formation

Time: 621, 548

Relation: International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE) 1995; Journal of Crystal Growth; https://publica.fraunhofer.de/handle/publica/189504

الاتاحة: https://publica.fraunhofer.de/handle/publica/189504
https://doi.org/10.1016/0022-0248(95)01063-7

المؤلفون: Kuenzel, H., Albrecht, P., Gibis, R., Hamacher, M., Schelhase, S.

مصطلحات موضوعية: chemical beam epitaxial growth, etching, gallium arsenide, iii-v semiconductors, indium compounds, infrared spectra, optical planar waveguides, photoluminescence, semiconductor epitaxial layers, semiconductor growth, spectral line breadth, MOMBE growth, waveguide applications, band gap equivalent emission wavelength, growth temperature, temperature dependence, optical quality, lateral uniformity, x ray diffraction, linewidth, dry etching, optical propagation losses, 1.05 to 1.7 mum, 465 to 500 c, ga0.11in0.89as0.23p0.77

Time: 621, 548

Relation: International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE) 1995; Journal of Crystal Growth; https://publica.fraunhofer.de/handle/publica/189505

الاتاحة: https://publica.fraunhofer.de/handle/publica/189505