المؤلفون: Stoliar, P., Levy, P., Sánchez, M. J., Leyva, A. G., Albornoz, C. A., Gomez-Marlasca, F., Zanini, A., Salazar, C. Toro, Ghenzi, N., Rozenberg, M. J.

مصطلحات موضوعية: Condensed Matter - Other Condensed Matter

URL الوصول: http://arxiv.org/abs/1310.3613

المؤلفون: Gomez-Marlasca, F., Ghenzi, N., Stoliar, P., Sánchez, M. J., Rozenberg, M. J., Leyva, G., Levy, P.

مصطلحات موضوعية: Condensed Matter - Materials Science

URL الوصول: http://arxiv.org/abs/1102.4554

المؤلفون: Ghenzi, N., Sanchez, M. J., Gomez-Marlasca, F., Levy, P., Rozenberg, M. J.

مصطلحات موضوعية: Condensed Matter - Other Condensed Matter

URL الوصول: http://arxiv.org/abs/1002.3593

المؤلفون: Ghenzi, N., Barella, M., Rubi, D., Acha, C.

المصدر: Applied Physics. 2019, 52 (12)

مصطلحات موضوعية: COMPUTACION, SINAPSIS, MEMORIA

وصف الملف: application/pdf

Relation: Ghenzi, N. et al. Adaptive threshold in TiO2-based synapses [en línea]. Journal of Physics D: Applied Physics. 2019, 52 (12). Disponible en: https://repositorio.uca.edu.ar/handle/123456789/14709; 1361-6463 (online); https://repositorio.uca.edu.ar/handle/123456789/14709

الاتاحة: https://repositorio.uca.edu.ar/handle/123456789/14709
https://doi.org/10.1088/1361-6463/aafdf3

المؤلفون: Ghenzi, N., Rozenberg, M., Pietrobon, L., Llopis, R., Gay, R., Beltrán, M., Knez, M., Hueso, L., Stoliar, P.

المصدر: Applied Physics Letters 2018.113:072108

مصطلحات موضوعية: CIRCUITOS ELECTRONICOS, MICROELECTRONICA, TRANSISTORES

وصف الملف: application/pdf

Relation: Ghenzi N, Rozenberg M, Pietrobon L, Llopis R, Gay R, Beltrán M, Knez M, Hueso L, y P. Stoliar. 2018. One-transistor one-resistor (1T1R) cell for large-area electronics [en línea]. Applied Physics Letters 113, 072108. doi:10.1063/1.5040126 Disponible en: https://repositorio.uca.edu.ar/handle/123456789/8610; 1077-3118 (online); 0003-6951 (print); https://repositorio.uca.edu.ar/handle/123456789/8610

الاتاحة: https://repositorio.uca.edu.ar/handle/123456789/8610
https://doi.org/10.1063/1.5040126

المؤلفون: Ghenzi, N.^1,2 (AUTHOR) nghenzi@snu.ac.kr, Acha, C.^1,3 (AUTHOR)

المصدر: Solid-State Electronics. Jan2025, Vol. 223, pN.PAG-N.PAG. 1p.

مصطلحات موضوعية: *ARTIFICIAL neural networks, *OXYGEN vacancy, *REACTIVE sputtering, *TITANIUM dioxide, *METALLIC oxides

المؤلفون: Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., Levy, P.

المصدر: J Appl Phys 2012;111(8)

مصطلحات موضوعية: High resistance, High-resistance state, Low-resistance state, Model simulation, Multipulses, Nonvolatile memory devices, Oxide interfaces, Resistance state, Resistance values, Resistive switching, Room temperature, Time constants, Computer simulation, Interface states, Manganese oxide, Experiments

وصف الملف: application/pdf

Relation: http://hdl.handle.net/20.500.12110/paper_00218979_v111_n8_p_Ghenzi; http://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=artiaex&d=paper_00218979_v111_n8_p_Ghenzi_oai

الاتاحة: https://hdl.handle.net/20.500.12110/paper_00218979_v111_n8_p_Ghenzi
http://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=artiaex&d=paper_00218979_v111_n8_p_Ghenzi_oai

المؤلفون: Gomez-Marlasca, F., Ghenzi, N., Rozenberg, M. J., Levy, P.

المصدر: Applied Physics Letters ; volume 99, issue 24 ; ISSN 0003-6951 1077-3118

الاتاحة: https://doi.org/10.1063/1.3662855
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3662855/14462576/249902_1_online.pdf

المؤلفون: Linares Moreau, M., Barella, M., López Mir, L., Ghenzi, N., Golmar, F., Granja, L.P., Ocal, C., Levy, P.

المصدر: Materials Today: Proceedings ; volume 14, page 100-103 ; ISSN 2214-7853

الاتاحة: http://dx.doi.org/10.1016/j.matpr.2019.05.062
https://api.elsevier.com/content/article/PII:S2214785319308740?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S2214785319308740?httpAccept=text/plain

المؤلفون: Ghenzi, N., Levy, P.

المصدر: Microelectronic Engineering ; volume 193, page 13-17 ; ISSN 0167-9317

الاتاحة: http://dx.doi.org/10.1016/j.mee.2018.02.017
https://api.elsevier.com/content/article/PII:S0167931718300844?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0167931718300844?httpAccept=text/plain

المؤلفون: Gomez-Marlasca, F.¹, Ghenzi, N.¹, Leyva, A. G.^1,2, Albornoz, C.¹, Rubi, D.^1,2, Stoliar, P.^1,2, Levy, P.¹

المصدر: Journal of Applied Physics. Apr2013, Vol. 113 Issue 14, p144510. 5p. 3 Graphs.

مصطلحات موضوعية: *MANGANITE, *MEMRISTORS, *NANOELECTRONICS, *SIMULATION methods & models, *NONVOLATILE memory

المؤلفون: Blasco, J., Ghenzi, N., Sune, J., Levy, P., Miranda, E.

المصدر: 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014 ; page 281-284

الاتاحة: http://dx.doi.org/10.1109/miel.2014.6842143
http://xplorestaging.ieee.org/ielx7/6828884/6842067/06842143.pdf?arnumber=6842143

المؤلفون: Ghenzi, N., Rozenberg, M.J., Llopis, R., Levy, P., Hueso, L.E., Stoliar, P.

المساهمون: Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 0003-6951.

مصطلحات موضوعية: Deposition, Oxygen, Switching, Switching systems, Temperature distribution, Conductive filaments, Device characteristics, Electrical characteristic, Fabrication parameters, Oxygen vacancy concentration, Resistive switching behaviors, Resistive switching devices, Temperature dependence, Oxygen vacancies, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

الاتاحة: https://hal.science/hal-04882614
https://doi.org/10.1063/1.4916516

المؤلفون: Blasco, J., Ghenzi, N., Suñé, J., Levy, P., Miranda, E.

المصدر: Microelectronics Reliability ; volume 55, issue 1, page 1-14 ; ISSN 0026-2714

الاتاحة: http://dx.doi.org/10.1016/j.microrel.2014.10.017
https://api.elsevier.com/content/article/PII:S0026271414004685?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0026271414004685?httpAccept=text/plain

المؤلفون: Rubi, D., Kalstein, A., Román, W.S., Ghenzi, N., Quinteros, C., Mangano, E., Granell, P., Golmar, F., Marlasca, F.G., Suarez, S., Bernardi, G., Albornoz, C., Leyva, A.G., Levy, P.

المساهمون: CONICET, PICT, CIC—Buenos Aires

المصدر: Thin Solid Films ; volume 583, page 76-80 ; ISSN 0040-6090

الاتاحة: http://dx.doi.org/10.1016/j.tsf.2015.03.048
https://api.elsevier.com/content/article/PII:S0040609015002643?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0040609015002643?httpAccept=text/plain

المؤلفون: Stoliar, P., Levy, P., Sanchez, M.J., Leyva, A.G., Albornoz, C.A., Gomez-Marlasca, F., Zanini, A., Toro Salazar, C., Ghenzi, N., Rozenberg, M.J.

المساهمون: Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 1549-7747 ; EISSN: 1558-3791.

مصطلحات موضوعية: Multilevel cell (MLC) memory, Multilevel resistive switching, Non-volatile memory, Nonvolatile memory devices, Resistive Random Access Memory (ReRAM), Resistive switching, Random access storage, Cells, Cytology, Manganites, Nonvolatile storage, Timing circuits, Transition metal oxides, Transition metals, Arbitrary values, Multi level cell (MLC), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: info:eu-repo/semantics/altIdentifier/arxiv/1310.3613; ARXIV: 1310.3613

الاتاحة: https://hal.science/hal-04882773
https://doi.org/10.1109/TCSII.2013.2290921

المؤلفون: Ghenzi, N., Sánchez, M.J., Rubi, D., Rozenberg, M.J., Urdaniz, C., Weissman, M., Levy, P.

المساهمون: Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 0003-6951.

مصطلحات موضوعية: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

الاتاحة: https://hal.science/hal-04882765
https://doi.org/10.1063/1.4875559

المؤلفون: Ghenzi, N., Rubi, D., Mangano, E., Gimenez, G., Lell, J., Zelcer, A., Stoliar, P., Levy, P.

المصدر: Thin Solid Films ; volume 550, page 683-688 ; ISSN 0040-6090

الاتاحة: http://dx.doi.org/10.1016/j.tsf.2013.11.013
https://api.elsevier.com/content/article/PII:S0040609013018294?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0040609013018294?httpAccept=text/plain

المؤلفون: Rubi, D., Tesler, F., Alposta, I., Kalstein, A., Ghenzi, N., Gomez-Marlasca, F., Rozenberg, M., Levy, P.

المساهمون: Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Ministerio de Ciencia, Tecnología e Innovación Productiva, MINCyT, Universidad Nacional de San Martín, UNSAM, (SJ10/05), Consejo Nacional de Investigaciones Científicas y Técnicas, CONICET, (291, PIPs 047)

المصدر: ISSN: 0003-6951.

مصطلحات موضوعية: Compliant mechanisms, Manganese oxide, Oxygen vacancies, Compliance current, Drift model, Low costs, On/off ratio, Resistive switching, Resistive switching mechanisms, Switching systems, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

الاتاحة: https://hal.science/hal-04882932
https://doi.org/10.1063/1.4826484

المؤلفون: Ghenzi, N., Stoliar, P., Fuertes, M.C., Marlasca, F.G., Levy, P.

المصدر: Physica B: Condensed Matter ; volume 407, issue 16, page 3096-3098 ; ISSN 0921-4526

الاتاحة: http://dx.doi.org/10.1016/j.physb.2011.12.034
https://api.elsevier.com/content/article/PII:S0921452611012270?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0921452611012270?httpAccept=text/plain