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1Academic Journal
المؤلفون: Im, Ki-Sik, An, Sung Jin, Theodorou, Christoforos, Ghibaudo, Gérard, Cristoloveanu, Sorin, Lee, Jung-Hee
المساهمون: Kumoh National Institute of Technology Gumi, Kumoh National Institute of Technology Gyeongsangbuk-do, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Université Grenoble Alpes (UGA)
المصدر: ISSN: 0741-3106 ; IEEE Electron Device Letters ; https://hal.science/hal-02969750 ; IEEE Electron Device Letters, 2020, 41 (6), pp.832-835. ⟨10.1109/LED.2020.2991164⟩.
مصطلحات موضوعية: GaN, Junctionless, Nanochannel, FinFET, Low-frequency noise, generation-recombination noise, Current collapse, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON]Engineering Sciences [physics]/Electronics
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2
المؤلفون: L. M. Almeida, Maria Glória Caño de Andrade, Marc Aoulaiche, Cor Claeys, Eddy Simoen, Malgorzata Jurczak, Christian Caillat
المصدر: Journal of Integrated Circuits and Systems. 8:71-77
مصطلحات موضوعية: Materials science, Silicon, business.industry, Infrasound, Silicon on insulator, chemistry.chemical_element, Substrate (electronics), Threshold voltage, Generation–recombination noise, chemistry, Optoelectronics, Electrical and Electronic Engineering, business, NMOS logic, Noise (radio)
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3Academic Journal
المؤلفون: Simoen, E., Cretu, Bogdan, Fang, W, Aoulaiche, M., Routoure, Jean-Marc, Carin, Régis, Luo, J, Zhao, Chao, Claeys, Cor
المساهمون: IMEC (IMEC), Catholic University of Leuven = Katholieke Universiteit Leuven (KU Leuven), Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS), Chinese Academy of Sciences Changchun Branch (CAS)
المصدر: ISSN: 0377-6883 ; Solid State Phenomena ; GADEST’2015 (Gettering and Defect Engineering in Semiconductor Technology 2015 ; https://hal.science/hal-01196556 ; Solid State Phenomena, 2016, 242, pp.449. ⟨10.4028/www.scientific.net/SSP.242.449⟩.
مصطلحات موضوعية: Random Telegraph Signal, silicon-on-insulator, gate oxide trap, metal-oxide- semiconductor field-effect transistor, generation-recombination noise, [SPI.TRON]Engineering Sciences [physics]/Electronics
جغرافية الموضوع: Germany
Time: Bad Staffelstein, Germany
Relation: hal-01196556; https://hal.science/hal-01196556; https://hal.science/hal-01196556/document; https://hal.science/hal-01196556/file/2016_SolidStatePhenomena_242_449_Simoen.pdf
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4
المؤلفون: Ki-Sik Im, Sung Jin An, Jung-Hee Lee, Christoforos G. Theodorou, Gerard Ghibaudo, Sorin Cristoloveanu
المساهمون: Kumoh National Institute of Technology [Gumi], Kumoh National Institute of Technology, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)
المصدر: IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2020, 41 (6), pp.832-835. ⟨10.1109/LED.2020.2991164⟩مصطلحات موضوعية: Materials science, Infrasound, Gate length, Nanochannel, Trapping, 01 natural sciences, Noise (electronics), Junctionless, law.invention, GaN, Superposition principle, Generation–recombination noise, Low-frequency noise, law, 0103 physical sciences, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, generation-recombination noise, business.industry, Transistor, Thermal conduction, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, FinFET, Current collapse, Optoelectronics, business
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5Dissertation/ Thesis
المؤلفون: Tataridou, Angeliki
المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Université Grenoble Alpes (UGA), Université Grenoble Alpes 2020-., Gérard Ghibaudo
المصدر: https://theses.hal.science/tel-04220712 ; Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes [2020-.], 2022. English. ⟨NNT : 2022GRALT038⟩.
مصطلحات موضوعية: Generation-Recombination noise, Random telegraph noise, Low-Frequency noise, Bruit de génération-Recombinaison, Bruit à basses fréquences, Bruit telegraphique, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Relation: NNT: 2022GRALT038
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6Dissertation/ Thesis
المؤلفون: Tataridou, Angeliki
المساهمون: Université Grenoble Alpes, Ghibaudo, Gérard
مصطلحات موضوعية: Bruit de génération-Recombinaison, Bruit à basses fréquences, Bruit telegraphique, Generation-Recombination noise, Random telegraph noise, Low-Frequency noise
Time: 620
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7Academic Journal
المساهمون: Universidade Estadual Paulista (UNESP)
مصطلحات موضوعية: 3D devices, Bulk, FinFET, Flicker noise, Generation-recombination noise, Low-frequency noise
وصف الملف: 122-125
Relation: Microelectronic Engineering; 0,604; http://dx.doi.org/10.1016/j.mee.2015.04.047; Microelectronic Engineering, v. 147, p. 122-125.; http://hdl.handle.net/11449/177340; 2-s2.0-84928490927; 2-s2.0-84928490927.pdf
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8
المؤلفون: Yue-Ming Hsin, Shih-Sheng Yang
المصدر: 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
مصطلحات موضوعية: Noise power, Materials science, Noise measurement, business.industry, Infrasound, Transconductance, Transistor, law.invention, Generation–recombination noise, law, Optoelectronics, Flicker noise, business, Noise (radio)
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9Conference
المؤلفون: Bordin, A., Cretu, B., Carin, R., Simoen, Eddy, Hellings, G., Linten, D., Claeys, C.
المصدر: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Proceedings ; ISSN: 2330-5738 ; ISSN: 2472-9132 ; ISBN: 9781728187662 ; ISBN: 9781728187655
مصطلحات موضوعية: Physics and Astronomy, GAA NW FET, low frequency noise, generation-recombination noise, low frequency noise spectroscopy
وصف الملف: application/pdf
Relation: https://biblio.ugent.be/publication/8708507; http://hdl.handle.net/1854/LU-8708507; http://dx.doi.org/10.1109/eurosoi-ulis49407.2020.9365281; https://biblio.ugent.be/publication/8708507/file/8708509
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10
المؤلفون: Enrico Caruso, D. Pin, Pierpaolo Palestri, L. Del Linz, M. Segatto, F. Bettetti
مصطلحات موضوعية: 1/f modeling, Semiconductor device modeling, Tunneling, Numerical models, Infrasound, Lorenzian, Random telegraph noise, Noise spectrum, Trap parameters, Noise (electronics), Modelling, Semiconductor device models, Generation–recombination noise, MOSFET, Low-frequency noise, Border traps, Traps distributions, Fluctuations, Quantum tunnelling, Physics, TCAD, 1/f noise, Lorenzian noise, Capacitance-voltage characteristics, III-V MOSFET, TCAD results, Computational physics, Computer Science::Other, Low-frequency noise spectrum, Nonlocal tunneling, Generation-recombination noise, Semiconductor device noise, Multifrequency C-V measurements, 1/f, Technology CAD (electronics), Noise
وصف الملف: application/pdf
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11
المؤلفون: El beyrouthy, Johnny
المساهمون: Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Montpellier, Fabien Pascal, Bruno Sagnes
المصدر: Acoustics [physics.class-ph]. Université Montpellier, 2020. English. ⟨NNT : 2020MONTS099⟩
مصطلحات موضوعية: Transistor bipolaire à hétérojonction SiGe, [SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], Bruit de Génération-Recombinaison, X-Ray and Gamma irradiations, 1/f noise, Compact models, Bruit en 1/f, Heterojunction bipolar transistor SiGe, Bruit basse fréquence, Irradiations X et Gamma, Modèles compact, Generation-Recombination noise, Low-Frequency noise
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12
المؤلفون: N.B. Lukyanchikova
المصدر: Noise Research in Semiconductor Physics
مصطلحات موضوعية: Physics, Generation–recombination noise, Semiconductor, business.industry, Optoelectronics, business
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13
المؤلفون: Juozas Vyšniauskas, Jonas Matukas, Justinas Glemža, Sandra Pralgauskaitė, Vilius Palenskis
المصدر: Infrared Physics & Technology. 91:101-106
مصطلحات موضوعية: 010302 applied physics, Materials science, Laser diode, business.industry, 02 engineering and technology, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Laser, 01 natural sciences, Noise (electronics), Atomic and Molecular Physics, and Optics, Spectral line, Electronic, Optical and Magnetic Materials, law.invention, Generation–recombination noise, law, 0103 physical sciences, Optoelectronics, Charge carrier, 0210 nano-technology, business, Diode
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14
المؤلفون: de Rooij, Steven A. H., Baselmans, Jochem J. A., Murugesan, Vignesh, Thoen, David J., de Visser, Pieter J.
مصطلحات موضوعية: Generation-Recombination Noise, Superconducting Resonator, Quasiparticle Trapping, Phonon Trapping
Relation: https://arxiv.org/abs/arXiv:2103.04777; https://zenodo.org/communities/sron; https://doi.org/10.5281/zenodo.4580356; https://doi.org/10.5281/zenodo.4590731; oai:zenodo.org:4590731
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15
المؤلفون: Ferdinand Grüneis
المصدر: Physica A: Statistical Mechanics and its Applications. 586:126512
مصطلحات موضوعية: Statistics and Probability, Physics, Generation–recombination noise, Semiconductor, Condensed matter physics, business.industry, Statistical and Nonlinear Physics, business
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16Conference
المؤلفون: Simoen, Eddy, Claeys, Cor, Oliveira, Alberto, Agopian, Paula, Martino, Joao, Hsu, Brent, Eneman, Geert, Rosseel, Eric, Loo, Roger, Arimura, Hiroaki, Horiguchi, Naoto, Wen, Wei-Chen, Nakashima, Hiroshi
المساهمون: Universidade Estadual Paulista (UNESP)
مصطلحات موضوعية: Deep-Level Transient Spectroscopy, Extended Defects, FinFETs, Generation-Recombination noise, Germanium-on-silicon, leakage current, MOScap, p-n junction diode, Threading Dislocations
Relation: SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices; http://dx.doi.org/10.1109/SBMicro.2019.8919472; SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.; http://hdl.handle.net/11449/198334; 2-s2.0-85077205701
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17Conference
المؤلفون: Caruso, Enrico, Bettetti, F., Del Linz, L., Pin, D., Segatto, M., Palestri, Pierpaolo
مصطلحات موضوعية: 1/f noise, MOSFET, Semiconductor device models, Semiconductor device noise, Technology CAD (electronics), III-V MOSFET, Random telegraph noise, Nonlocal tunneling, TCAD results, Trap parameters, Low-frequency noise spectrum, Traps distributions, Lorenzian noise, 1/f modeling, Generation-recombination noise, Multifrequency C-V measurements, Tunneling, Numerical models, Capacitance-voltage characteristics, Fluctuations, Semiconductor device modeling, Low-frequency noise, Lorenzian, 1/f, Border traps, Modelling, TCAD, Noise
وصف الملف: application/pdf
Relation: https://ieeexplore.ieee.org/document/8870548; Caruso, E., Bettetti, F., Linz, L. D., Pin, D., Segatto, M. and Palestri, P. (2019) 'Modeling 1/f and Lorenzian noise in III-V MOSFETs', 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. doi:10.1109/SISPAD.2019.8870548; http://hdl.handle.net/10468/9167
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18
المؤلفون: Blom, Anders
مصطلحات موضوعية: Mathematical and general theoretical physics, generation-recombination noise, THz laser, classical mechanics, relativity, quantum mechanics, statistisk fysik, gravitation, relativitet, kvantmekanik, klassisk mekanik, Matematisk och allmän teoretisk fysik, thermodynamics, termodynamik, statistical physics, donor energies, Si/SiGe quantum well, central-cell effect, impurity absorption, Fysicumarkivet A:2003:Blom, Resonant states, impurity levels, Naturvetenskap, Fysik, Den kondenserade materiens fysik, Natural Sciences, Physical Sciences, Condensed Matter Physics
وصف الملف: electronic
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19
المؤلفون: Anjan Chakravorty, Klaus Aufinger, Chhandak Mukherjee, Josef Boeck, Cristell Maneux, Thomas Jacquet, Thomas Zimmer
المصدر: Microelectronics Reliability
مصطلحات موضوعية: 010302 applied physics, Engineering, business.industry, Bipolar junction transistor, Electrical engineering, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Signal, Noise (electronics), Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Safe operating area, Generation–recombination noise, Reliability (semiconductor), 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, Safety, Risk, Reliability and Quality, business, Common emitter
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20
المؤلفون: Christoforos G. Theodorou, Gerard Ghibaudo
المساهمون: Theodorou, Christoforos, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)
المصدر: Noise in Nanoscale Semiconductor Devices ISBN: 9783030374990
Noise in Nanoscale Semiconductor Devices
Noise in Nanoscale Semiconductor Devices, 2020
HALمصطلحات موضوعية: 010302 applied physics, Circuit noise, Materials science, Infrasound, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Noise (electronics), Engineering physics, Noise characterization, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Generation–recombination noise, Verilog-A, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Simulation methods, ComputingMilieux_MISCELLANEOUS
وصف الملف: application/pdf