المؤلفون: Ruizhe Zhao, Ke Gao, Rongjiang Zhu, Zhuoran Zhang, Qiang He, Ming Xu, Niannian Yu, Hao Tong, Xiangshui Miao

المصدر: InfoMat, Vol 6, Iss 9, Pp n/a-n/a (2024)

مصطلحات موضوعية: Ge2Sb2Te5, octahedral configuration, phase change memory, TiO2 dielectric interface, Materials of engineering and construction. Mechanics of materials, TA401-492, Information technology, T58.5-58.64

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2567-3165

URL الوصول: https://doaj.org/article/f999f0cb92214bd78a82d13ea09cf76a

المؤلفون: Qiang Wang, Yachuan Wang, Yankun Wang, Luyue Jiang, Jinyan Zhao, Zhitang Song, Jinshun Bi, Libo Zhao, Zhuangde Jiang, Jutta Schwarzkopf, Shengli Wu, Bin Zhang, Wei Ren, Sannian Song, Gang Niu

المصدر: InfoMat, Vol 6, Iss 8, Pp n/a-n/a (2024)

مصطلحات موضوعية: electronic synapses, neuromorphic computing, PCRAM, Ru‐doped Ge2Sb2Te5, Materials of engineering and construction. Mechanics of materials, TA401-492, Information technology, T58.5-58.64

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2567-3165

URL الوصول: https://doaj.org/article/c1e51ddd2fca4efe8267741d1d054829

المؤلفون: Chen Kai, Song Wenju, Li Zhaolin, Wang Zihao, Ma Junqing, Wang Xinjie, Sun Tao, Guo Qinglei, Shi Yanpeng, Qin Wei-Dong, Song Aimin, Chen Hou-Tong, Zhang Yifei

المصدر: Nanophotonics, Vol 13, Iss 12, Pp 2101-2105 (2024)

مصطلحات موضوعية: 6g, terahertz, ge2sb2te5, non-volatile, reconfigurable intelligent surface, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2192-8614

URL الوصول: https://doaj.org/article/b6cb2454bd0a4bd882bad03bdcc362d1

المؤلفون: Bel-Hadj, Ibrahim, Guerboub, Mohammed, Lambrecht, Achille, Ori, Guido, Massobrio, Carlo, Martin, Évelyne

المساهمون: Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube), École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), ANR-17-EURE-0024,QMAT,Quantum Science and Nanomaterials(2017), ANR-11-LABX-0058,NIE,Nanostructures en Interaction avec leur Environnement(2011), ANR-10-IDEX-0002,UNISTRA,Par-delà les frontières, l'Université de Strasbourg(2010), European Project: 847471,H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions / H2020-EU.1.3.4. - Increasing structural impact by co-funding activities,10.3030/847471,QUSTEC(2019)

المصدر: ISSN: 0022-3727 ; EISSN: 1361-6463.

مصطلحات موضوعية: Molecular dynamics, Nanoscale, Thermal conductivity, Phase-change materials, Crystalline Ge2Sb2Te5, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: info:eu-repo/grantAgreement//847471/EU/International, interdisciplinary and intersectoral doctoral programme in Quantum Science and Technologies/QUSTEC

الاتاحة: https://hal.science/hal-04495079
https://hal.science/hal-04495079v1/document
https://hal.science/hal-04495079v1/file/Bel-Hadj%2Bet%2Bal_2024_J._Phys._D%20_Appl._Phys._10.1088_1361-6463_ad316b.pdf
https://doi.org/10.1088/1361-6463/ad316b

المؤلفون: Rujun Zhou, Si Luo, Jingyi Tian, Yusheng Zhang, Chenning Tao, Qiang Ling, Daru Chen

المصدر: Results in Physics, Vol 52, Iss , Pp 106901- (2023)

مصطلحات موضوعية: Ge2Sb2Te5, Metasurface, Bound state in the continuum, Sensing, Optical switch, Physics, QC1-999

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2211379723006940; https://doaj.org/toc/2211-3797

URL الوصول: https://doaj.org/article/aec9a348b2a741069e9560e6d6e9b456

المؤلفون: Zifeng Qiu, Gui Jin, Bin Tang

المصدر: Photonics, Vol 11, Iss 3, p 272 (2024)

مصطلحات موضوعية: metamaterial, phase change materials, Ge2Sb2Te5, perfect absorber, near-field imaging, Applied optics. Photonics, TA1501-1820

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2304-6732/11/3/272; https://doaj.org/toc/2304-6732

URL الوصول: https://doaj.org/article/0ef7eea8eb544ba195ac5dec0aca10bf

المؤلفون: Gong, Qingmei, Jiang, Haihong, Perrin-Toinin, Jacques, Peterlechner, Martin, Putero, Magali, Portavoce, Alain, Divinski, Sergiy, Wilde, Gerhard

المساهمون: Westfälische Wilhelms-Universität Münster = University of Münster (WWU), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Karlsruhe Institute of Technology = Karlsruher Institut für Technologie (KIT)

المصدر: ISSN: 1359-6454 ; Acta Materialia ; https://hal.science/hal-04275442 ; Acta Materialia, 2023, 257, ⟨10.1016/j.actamat.2023.119146⟩.

مصطلحات موضوعية: Phase change materials Ge 2 Sb 2 Te 5 Diffusion Amorphous, Phase change materials Ge2Sb2Te5 diffusion amorphous, Phase change materials, Ge2Sb2Te5, diffusion, amorphous, [PHYS]Physics [physics]

Relation: hal-04275442; https://hal.science/hal-04275442; https://hal.science/hal-04275442/document; https://hal.science/hal-04275442/file/Te_self-diffuison_in_amorphous_Ge2Sb2Te5-arxiv.pdf

الاتاحة: https://hal.science/hal-04275442
https://hal.science/hal-04275442/document
https://hal.science/hal-04275442/file/Te_self-diffuison_in_amorphous_Ge2Sb2Te5-arxiv.pdf
https://doi.org/10.1016/j.actamat.2023.119146

المؤلفون: Zhao Kang, Han Weina, Han Zihao, Zhang Xiaobin, Zhang Xingyi, Duan Xiaofeng, Wang Mengmeng, Yuan Yanping, Zuo Pei

المصدر: Nanophotonics, Vol 11, Iss 13, Pp 3101-3113 (2022)

مصطلحات موضوعية: ge2sb2te5, grayscale identification, integrated property–structure modulation, multifunctional and multilevel rewritable storage, ultrafast laser, visual structural color, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2192-8614

URL الوصول: https://doaj.org/article/68b873d76aaf468484b5238230d6eb8e

المؤلفون: Qiang Wang, Gang Niu, Ruobing Wang, Ren Luo, Zuo-Guang Ye, Jinshun Bi, Xi Li, Zhitang Song, Wei Ren, Sannian Song

المصدر: Journal of Materiomics, Vol 8, Iss 2, Pp 382-391 (2022)

مصطلحات موضوعية: Programmable synapse, Synaptic simulation, PCRAM, C-doped Ge2Sb2Te5, Electronic synapse, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2352847821001210; https://doaj.org/toc/2352-8478

URL الوصول: https://doaj.org/article/09ece65b6d5b410982e9c12afd5ec63b

المؤلفون: Roland, Guillaume, Portavoce, Alain, Bertoglio, Maxime, Descoins, Marion, Remondina, Jacopo, Lorut, Frédéric, Putero, Magali

المساهمون: Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics

المصدر: ISSN: 2589-1529 ; Materialia ; https://hal.science/hal-04275455 ; Materialia, 2023, 32, ⟨10.1016/j.mtla.2023.101885⟩.

مصطلحات موضوعية: Ge2Sb2Te5, Phase change material, Phase change random access memory, [PHYS]Physics [physics]

Relation: hal-04275455; https://hal.science/hal-04275455; https://hal.science/hal-04275455/document; https://hal.science/hal-04275455/file/Materialia32_101885.pdf

الاتاحة: https://hal.science/hal-04275455
https://hal.science/hal-04275455/document
https://hal.science/hal-04275455/file/Materialia32_101885.pdf
https://doi.org/10.1016/j.mtla.2023.101885

المؤلفون: Hernandez, Gerardo Rodriguez

المساهمون: Bhaskaran, Harish

مصطلحات موضوعية: 621.381, Phase change memory, Optoelectronics, Nano fabrication, GST, GST(225), Nano-devices, Ge2Sb2Te5, Phase Change Materials, Mixed mode electro-optic operation

URL الوصول: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.729156

المؤلفون: Kai Guo, Xiaoyu Li, Huifang Ai, Xiya Ding, Lulu Wang, Wei Wang, Zhongyi Guo

المصدر: Results in Physics, Vol 34, Iss , Pp 105269- (2022)

مصطلحات موضوعية: Mid-infrared wave, Metasurface, Ge2Sb2Te5 (GST), Physics, QC1-999

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2211379722000687; https://doaj.org/toc/2211-3797

URL الوصول: https://doaj.org/article/fbf102c6b4684d31935b4aec32eabe7b

المؤلفون: Bertelli, Marco, Díaz Fattorini, Adriano, De Simone, Sara, Calvi, Sabrina, Plebani, Riccardo, Mussi, Valentina, Arciprete, Fabrizio, Calarco, Raffaella, Longo, Massimo

المساهمون: Bertelli, M, Díaz Fattorini, A, De Simone, S, Calvi, S, Plebani, R, Mussi, V, Arciprete, F, Calarco, R, Longo, M

مصطلحات موضوعية: Ge2Sb2Te5, PCM, crystallization, electrical properties, flexible substrates, sputtering, Settore FIS/03 - FISICA DELLA MATERIA

Relation: info:eu-repo/semantics/altIdentifier/pmid/35745340; info:eu-repo/semantics/altIdentifier/wos/WOS:000819086100001; volume:12; issue:12; numberofpages:9; journal:NANOMATERIALS; https://hdl.handle.net/2108/310999; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85131587563

الاتاحة: https://hdl.handle.net/2108/310999
https://doi.org/10.3390/nano12122001

المؤلفون: Pries, Julian, Weber, Hans, Benke-Jacob, Julia, Kaban, Ivan, Wei, Shuai, Wuttig, Matthias, Lucas, Pierre

المصدر: Pries , J , Weber , H , Benke-Jacob , J , Kaban , I , Wei , S , Wuttig , M & Lucas , P 2022 , ' Fragile-to-Strong Transition in Phase-Change Material Ge 3 Sb 6 Te 5 ' , Advanced Functional Materials , vol. 32 , no. 31 , 2202714 . https://doi.org/10.1002/adfm.202202714

مصطلحات موضوعية: crystallization kinetics, fragile-to-strong transitions, liquid-liquid transitions, phase-change materials, undercooled liquids, CRYSTALLIZATION, TEMPERATURE-DEPENDENCE, VISCOSITY, GE2SB2TE5, LIQUID-PHASE, GLASS, CONNECTION, STRUCTURAL RELAXATION

وصف الملف: application/pdf

الاتاحة: https://pure.au.dk/portal/da/publications/fragiletostrong-transition-in-phasechange-material-ge3sb6te5(554eb132-c48a-4bcd-9d3f-226efafce1e0).html
https://doi.org/10.1002/adfm.202202714
https://pure.au.dk/ws/files/335434443/Adv_Funct_Materials_2022_Pries.pdf
http://www.scopus.com/inward/record.url?scp=85129879556&partnerID=8YFLogxK

المؤلفون: Cheng Liu, Yonghui Zheng, Tianjiao Xin, Yunzhe Zheng, Rui Wang, Yan Cheng

المصدر: Nanomaterials, Vol 13, Iss 3, p 582 (2023)

مصطلحات موضوعية: phase change memory, Ge2Sb2Te5, phase transition, electron transport, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/13/3/582; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/51dec2f63fcd47ae8cd03da991288de0

المؤلفون: Юрий Александрович Петрушин, Алла Валентиновна Марченко, Павел Павлович Серегин

المصدر: Physics of Complex Systems, Vol 2, Iss 2 (2021)

مصطلحات موضوعية: Mössbauer spectroscopy, phase-memory, Ge2Sb2Te5, local structure, X-ray fluorescence analysis, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://physcomsys.ru/index.php/physcomsys/article/view/49; https://doaj.org/toc/2687-153X

URL الوصول: https://doaj.org/article/912b43a696f24f4494885ed8353d0929

المؤلفون: Shalini, Ashawaraya

المساهمون: Hicken, Robert J.

مصطلحات موضوعية: 530, Non-linear optics, ultrafast transition, Ge2Sb2Te5, phonons, Raman scattering

URL الوصول: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.580049

المؤلفون: Hiroyuki Tsuda, Kenta Sakamoto

المصدر: IEICE Electronics Express. 2022, 19(10):20220155

المؤلفون: Luong, Minh, Anh, Cherkashin, Nikolay, Pécassou, Béatrice, Sabbione, Chiara, Mazen, Frédéric, Claverie, Alain

المساهمون: Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

المصدر: ISSN: 2079-4991.

مصطلحات موضوعية: phase change materials, Ge2Sb2Te5, nitrogen, crystallization, strain, kinetics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: hal-03375510; https://hal.science/hal-03375510; https://hal.science/hal-03375510/document; https://hal.science/hal-03375510/file/Nanomaterials-2021_Minh_Cherkashin.pdf

الاتاحة: https://hal.science/hal-03375510
https://hal.science/hal-03375510/document
https://hal.science/hal-03375510/file/Nanomaterials-2021_Minh_Cherkashin.pdf
https://doi.org/10.3390/nano11071729

المؤلفون: Pathak, Ravi, Dadwal, U., Kapoor, A.K., Vallet, M., Claverie, Alain, Singh, R.

المساهمون: Indian Institute of Technology Delhi (IIT Delhi), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 1369-8001 ; Materials Science in Semiconductor Processing ; https://hal.science/hal-03854560 ; Materials Science in Semiconductor Processing, 2021, 134 (7), pp.105998. ⟨10.1016/j.mssp.2021.105998⟩.

مصطلحات موضوعية: phase change materials, Ge2Sb2Te5, nitrogen, crystallization, strain, kinetics, Hydrogen, Implantation, GaSb, Exfoliation, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: hal-03854560; https://hal.science/hal-03854560; https://hal.science/hal-03854560/document; https://hal.science/hal-03854560/file/mansucript.pdf

الاتاحة: https://hal.science/hal-03854560
https://hal.science/hal-03854560/document
https://hal.science/hal-03854560/file/mansucript.pdf
https://doi.org/10.1016/j.mssp.2021.105998