المؤلفون: Zurauskaite, Laura, Abedin, Ahmad, Hellström, Per-Erik, 1970, Östling, Mikael

المصدر: ECS Transactions. :387-393

مصطلحات موضوعية: Germanium compounds, Interface states, Logic gates, Si-Ge alloys, Silica, Silicates, Silicon, Silicon oxides, Thulium compounds, CMOS devices, Epitaxially grown, Gate stacks, Ge surfaces, Interface state density, Interfacial layer, Oxide trap density, Ultra-thin, Passivation

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-285309
https://kth.diva-portal.org/smash/get/diva2:1505880/FULLTEXT01.pdf

المؤلفون: Heyns, M., Bellenger, F., BRAMMERTZ, Guy, Caymax, M., De Gendt, S., De Jaeger, B., Delabie, A., Eneman, G., Groeseneken, G., Houssa, M., Leonelli, D., Lin, D., Martens, K., Merckling, C., MEURIS, Marc, Mitard, J., Penaud, J., Pourtois, G., Scarrozza, M., Simoen, E., Van Elshocht, S., Vandenberghe, W., Vandooren, A., Verhulst, A., Wang, W.-E.

مصطلحات موضوعية: Defect levels, Electrical passivation, Experimental data, Ge surfaces, High mobility channels, New material, Novel devices, Power Consumption, Roadmap, Short channels, Si layer, Supply voltages, Theoretical modeling, Tunnel FET, Defects, Germanium, Heterojunctions, Materials, MOS devices, Passivation, Semiconducting silicon, Carrier mobility

Relation: Materials Research Society Symposium Proceedings, 1194, p. 34 -45; http://hdl.handle.net/1942/31632; 45; 34

الاتاحة: http://hdl.handle.net/1942/31632

المؤلفون: Gianluigi Maggioni, Walter Raniero, D. De Salvador, Virginia Boldrini, Enrico Napolitani, Francesco Sgarbossa, D. R. Napoli, Sara Carturan

مصطلحات موضوعية: Ge surfaces, Secondary ion mass spectrometry, Materials science, Annealing (metallurgy), Analytical chemistry, Ge substrates, chemistry.chemical_element, Germanium, Doping (additives), Mass spectrometry, Radiation detectors, Silicon wafers, Sputtering, Surface defects, Surface morphology, Defect-free surfaces, Diffusion annealing, Diffusion model, Diffusion profiles, Dopant sources, Ge wafer, Diffusion, Antimony diffusion, 02 engineering and technology, 01 natural sciences, Diffusion, Condensed Matter::Materials Science, 0103 physical sciences, General Materials Science, Wafer, 010302 applied physics, Dopant, Mechanical Engineering, Doping, Defect-free surfaces, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Mechanics of Materials, 0210 nano-technology, Surface morphology, Ge wafer

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75ebc285c4584a4874205b1141e54b7d
http://hdl.handle.net/11577/3251035

المؤلفون: Yaacoub, Lama, Schamm-Chardon, Sylvie, Ovsyuk, N.N., Zwick, Antoine, Groenen, Jesse

المساهمون: Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Sobolev Institute of Geology and Mineralogy Novosibirsk, Siberian Branch of the Russian Academy of Sciences (SB RAS), Matériaux Multi-fonctionnels et Multi-échelles (CEMES-M3)

المصدر: ISSN: 1062-8738.

مصطلحات موضوعية: Brillouin scattering, Electromagnetic wave emission, Germanium, Phonons, Thermodynamic stability, Acoustic phonons, Ge surfaces, High frequency acoustics, Interfacial region, Native oxide layer, Photoelastic models, Sub nanometers, Thermal instabilities, Acoustic wave scattering, [PHYS]Physics [physics]

Relation: hal-01720450; https://hal.science/hal-01720450

الاتاحة: https://hal.science/hal-01720450
https://doi.org/10.3103/S1062873815110246

المؤلفون: Gai, Z, Yang, WS, Zhao, RG, Sakurai, T

المساهمون: Yang, WS (reprint author), Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan., Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan., Beijing Univ, Dept Phys, Beijing 100871, Peoples R China., Beijing Univ, Lab Mesoscop Phys, Beijing 100871, Peoples R China.

المصدر: SCI

مصطلحات موضوعية: ORIENTATIONAL PHASE-DIAGRAM, MILLER INDEX SURFACES, SCANNING TUNNELING MICROSCOPY, STEPPED SI(113) SURFACES, ATOMIC-STRUCTURE, SILICON SURFACES, GE SURFACES, ENERGY, RECONSTRUCTIONS, TRICRITICALITY

Relation: PHYSICAL REVIEW B.1999,59,(20),13003-13008.; 1022553; http://hdl.handle.net/20.500.11897/401573; WOS:000080571000042

الاتاحة: https://hdl.handle.net/20.500.11897/401573
https://doi.org/10.1103/PhysRevB.59.13003

المؤلفون: Gai, Z, Zhao, RG, Li, XW, Yang, WS

المساهمون: Gai, Z (reprint author), Peking Univ, Mescosop Phys Lab, Beijing 100871, Peoples R China., Peking Univ, Mescosop Phys Lab, Beijing 100871, Peoples R China., Peking Univ, Dept Phys, Beijing 100871, Peoples R China.

المصدر: SCI

مصطلحات موضوعية: SCANNING-TUNNELING-MICROSCOPY, MILLER INDEX SURFACES, VICINAL SURFACES, ATOMIC-STRUCTURE, EQUILIBRIUM SHAPE, SI(001) SURFACES, SILICON SURFACES, ENERGY BARRIER, GE SURFACES, SI(113)

Relation: PHYSICAL REVIEW B.1998,58,(8),4572-4578.; 789863; http://hdl.handle.net/20.500.11897/390037; WOS:000075772500058

الاتاحة: https://hdl.handle.net/20.500.11897/390037
https://doi.org/10.1103/PhysRevB.58.4572

المؤلفون: Johnson, Brett, Caradonna, P., Pyke, D. J., McCallum, Jeffrey C., Gortmaker, P.

المصدر: Thin Solid Films

مصطلحات موضوعية: Keywords: a-Si layers, Amorphous Si, Crystalline-amorphous interfaces, Device modeling, Dopant concentrations, Effect of hydrogen, Ge surfaces, H diffusion, Hydrogen diffusion, In-diffusion, Order of magnitude, Retarding effect, Si layer, Solid phase epitaxy, Stabl Device modeling

Relation: http://hdl.handle.net/1885/61277; https://openresearch-repository.anu.edu.au/bitstream/1885/61277/7/01_Johnson_Hydrogen_in_amorphous_Si_and_2010.pdf.jpg

الاتاحة: http://hdl.handle.net/1885/61277
https://doi.org/10.1016/j.tsf.2009.09.145
https://openresearch-repository.anu.edu.au/bitstream/1885/61277/7/01_Johnson_Hydrogen_in_amorphous_Si_and_2010.pdf.jpg

المؤلفون: Johnson, Brett, Caradonna, P., Pyke, D. J., McCallum, Jeffrey C., Gortmaker, P.

المصدر: Thin Solid Films

مصطلحات الفهرس: Keywords: a-Si layers; Amorphous Si; Crystalline-amorphous interfaces; Device modeling; Dopant concentrations; Effect of hydrogen; Ge surfaces; H diffusion; Hydrogen diffusion; In-diffusion; Order of magnitude; Retarding effect; Si layer; Solid phase epitaxy; Stabl Device modeling; Hydrogen diffusion; Solid phase epitaxy, Journal article

URL: http://hdl.handle.net/1885/61277