المؤلفون: Medina Bailón, Cristina, Sadi, T., Sampedro Matarín, Carlos, Padilla García, José Luis, Donetti, Luca, Georgiev, Vihar, Gámiz Pérez, Francisco Jesús, Asenov, Asen

مصطلحات موضوعية: Gate leakage mechanism, Direct tunneling, Trap assisted tunneling

Relation: info:eu-repo/grantAgreement/EC/FP7/688101; Medina Bailon, C., Sadi, T., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2019) Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator. Lecture Notes in Computer Science, 11189, pp. 273- 280; http://hdl.handle.net/10481/61980

الاتاحة: http://hdl.handle.net/10481/61980
https://doi.org/10.1007/978-3-030-10692-8_30

مصطلحات موضوعية: ta113, Trap assisted tunneling, Direct tunneling, Gate leakage mechanism, FDSOI, MS-EMC

URL الوصول: https://explore.openaire.eu/search/publication?articleId=CSC_________::2b661e38b978bd6cbb8479559237437e
https://doi.org/10.1007/9783030106928_30

المؤلفون: D.M. Sathaiya, Shreepad Karmalkar, Naresh Satyan

المصدر: IEEE Electron Device Letters. 27:87-89

مصطلحات موضوعية: Materials science, Passivation, Analytical chemistry, Algan gan, High-electron-mobility transistor, Semiconducting aluminum compounds, Gate leakage mechanism, Leakage currents, law.invention, Tunnel effect, Trap-assisted tunneling (TT), High electron mobility transistors, law, Electron tunneling, Electrical and Electronic Engineering, Semiconducting gallium compounds, Quantum tunnelling, Leakage (electronics), business.industry, Transistor, Direct tunneling (DT), Wide-bandgap semiconductor, Reverse gate leakage, Computer simulation, Electronic, Optical and Magnetic Materials, Optoelectronics, Gates (transistor), business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::460c5eee7ea2987b9db2ecfaa6eb7533
https://doi.org/10.1109/led.2005.862672