نتائج البحث - "Ganguly, Swaroop"

1

Academic Journal

Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis.

المؤلفون: Rai, Narendra, Sarkar, Ritam, Mahajan, Ashutosh, Laha, Apurba, Saha, Dipankar, Ganguly, Swaroop

المصدر: Journal of Applied Physics; 10/28/2024, Vol. 136 Issue 16, p1-13, 13p

مصطلحات موضوعية: MODULATION-doped field-effect transistors, CONDUCTION bands, THRESHOLD voltage, GALLIUM nitride

2

Academic Journal

Analytical model and experimental validation of critical dependency of pGaN gated AlGaN/GaN enhancement-mode high electron mobility transistor characteristics on trap-assisted tunneling.

المؤلفون: Jeyakumar, Ranie S., James, J. J., Ganguly, Swaroop, Saha, Dipankar

المصدر: Journal of Applied Physics; 10/21/2024, Vol. 136 Issue 15, p1-9, 9p

مصطلحات موضوعية: MODULATION-doped field-effect transistors, TWO-dimensional electron gas, ENERGY levels (Quantum mechanics), FERMI energy, POWER electronics

3

Academic Journal

On-demand performance optimization of AlGaN/GaN high electron mobility transistors using stoichiometric variation of dielectric alloy AlxTayO.

المؤلفون: Surapaneni, Sreenadh¹ (AUTHOR), Ganguly, Swaroop¹ (AUTHOR), Saha, Dipankar¹ (AUTHOR) dipankarsaha@iitb.ac.in

المصدر: Journal of Applied Physics. 10/14/2024, Vol. 136 Issue 14, p1-13. 13p.

مصطلحات موضوعية: *ENERGY dissipation, *OXIDE coating, *X-ray photoelectron spectroscopy, *BREAKDOWN voltage, *DIELECTRIC breakdown, *TANTALUM

4

Report

India's Rise in Nanoelectronics Research

المؤلفون: Ganguly, Udayan, Lashkare, Sandip, Ganguly, Swaroop

مصطلحات موضوعية: Electrical Engineering and Systems Science - Systems and Control

URL الوصول: http://arxiv.org/abs/2011.11251

View record in Arxiv

5

Academic Journal

Enhanced UV Photodetector Efficiency with a ZnO/Ga 2 O 3 Heterojunction

المؤلفون: Pandey, Shashi, Ganguly, Swaroop, Shukla, Alok, Tripathi, Anurag

المساهمون: Indian Institute of Technology Bombay

المصدر: ACS Applied Electronic Materials ; ISSN 2637-6113 2637-6113

الاتاحة: https://doi.org/10.1021/acsaelm.4c02067
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c02067

View record in BASE

6

Report

Decoherence assisted spin squeezing generation in superposition of tripartite GHZ and W states

المؤلفون: Sharma, Kapil K., Ganguly, Swaroop

المصدر: EPJ Web Conf. Volume 198, 2019

مصطلحات موضوعية: Quantum Physics

URL الوصول: http://arxiv.org/abs/1806.01730

View record in Arxiv

7

Report

Electrical-equivalent van der Waals gap for 2D bilayers

المؤلفون: Vaidya, Dhirendra, Lodha, Saurabh, Ganguly, Swaroop

المصدر: Phys. Rev. Applied 10, 034070 (2018)

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

URL الوصول: http://arxiv.org/abs/1803.10009

View record in Arxiv

8

Academic Journal

Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors.

المؤلفون: Rai, Narendra, Sarkar, Ritam, Mahajan, Ashutosh, Laha, Apurba, Saha, Dipankar, Ganguly, Swaroop

المصدر: Journal of Applied Physics; 12/28/2023, Vol. 134 Issue 24, p1-12, 12p

مصطلحات موضوعية: STRAY currents, MODULATION-doped field-effect transistors, ELECTRON traps, GALLIUM nitride, ELECTRON emission, THERMAL electrons, ELECTRIC fields

9

Academic Journal

The avian compass can be sensitive even without sustained electron spin coherence

المؤلفون: Jain, Rakshit, Poonia, Vishvendra S., Saha, Kasturi, Saha, Dipankar, Ganguly, Swaroop

المصدر: Proceedings: Mathematical, Physical and Engineering Sciences, 2021 Jun 01. 477(2250), 1-14.

URL الوصول: https://www.jstor.org/stable/27097778

10

Report

Analytical Modeling of Metal Gate Granularity based Threshold Voltage Variability in NWFET

المؤلفون: Vardhan, P Harsha, Mittal, Sushant, Ganguly, Swaroop, Ganguly, Udayan

مصطلحات موضوعية: Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/1801.00935

View record in Arxiv

11

Report

The Avian Compass can be Sensitive even without Sustained Quantum Coherence

المؤلفون: Jain, Rakshit, Poonia, Vishvendra Singh, Saha, Kasturi, Saha, Dipankar, Ganguly, Swaroop

مصطلحات موضوعية: Quantum Physics

URL الوصول: http://arxiv.org/abs/1712.04623

View record in Arxiv

12

Report

Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures

المؤلفون: Date, Mihir, Mukherjee, Sudipta, Ghosh, Joydeep, Saha, Dipankar, Ganguly, Swaroop, Laha, Apurba

مصطلحات موضوعية: Physics - Applied Physics

URL الوصول: http://arxiv.org/abs/1712.03419

View record in Arxiv

13

Report

Quantum Biomimetic Modeling of Diamond NV$^{-}$ Center Spin Dynamics

المؤلفون: Poonia, Vishvendra Singh, Saha, Dipankar, Ganguly, Swaroop

مصطلحات موضوعية: Physics - Atomic Physics, Quantum Physics

URL الوصول: http://arxiv.org/abs/1709.07632

View record in Arxiv

14

Academic Journal

P-type NiOX dielectric-based CMOS inverter logic gate using enhancement-mode GaN nMOS and diamond pMOS transistors.

المؤلفون: Patil, Mahalaxmi, Pradhan, Subrat K., Shukla, Vivek K., Rai, Padmnabh, Paul, Jayanti, Sheikh, Aaqib H., Parvez, Bazila, Ganguly, Swaroop, Saha, Kasturi, Saha, Dipankar

المصدر: Applied Physics Letters; 12/16/2024, Vol. 125 Issue 25, p1-7, 7p

مصطلحات موضوعية: TWO-dimensional electron gas, PERMITTIVITY, METALWORK, THRESHOLD voltage, LOGIC circuits, METAL oxide semiconductor field-effect transistors

15

Report

On the functional window of the avian compass

المؤلفون: Poonia, Vishvendra Singh, Kondabagil, Kiran, Saha, Dipankar, Ganguly, Swaroop

المصدر: Phys. Rev. E 95, 052417 (2017)

مصطلحات موضوعية: Physics - Biological Physics

URL الوصول: http://arxiv.org/abs/1702.03388

View record in Arxiv

16

Report

Fringe field control of one-dimensional room temperature quantum transport in site controlled AlGaN/GaN lateral nanowires

المؤلفون: Akhil, K. S., Khachariya, Dolar, Meer, Mudassar, Ganguly, Swaroop, Saha, Dipankar

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics

URL الوصول: http://arxiv.org/abs/1606.02564

View record in Arxiv

17

Report

Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires

المؤلفون: Banerjee, Debashree, Nadar, Maharaja B., Upadhyay, Pankaj, Singla, Raksha, Sankaranarayanan, Sandeep, Khachariya, Dolar, Pande, Nakul, Takhar, Kuldeep, Ganguly, Swaroop, Saha, Dipankar

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science

URL الوصول: http://arxiv.org/abs/1503.02279

View record in Arxiv

18

Academic Journal

Strain‐Engineered Unified SiNx Deposition for Device Passivation and Capacitance Dielectric in GaN Monolithic Microwave Integrated Circuit.

المؤلفون: Sahu, Jyoti, Parvez, Bazila, Patil, Mahalaxmi, S. J., Ranie, Sahu, Arpit, Basak, Subhajit, Upadhyay, Bhanu, Ganguly, Swaroop, Saha, Dipankar

المصدر: Physica Status Solidi. A: Applications & Materials Science; Nov2024, Vol. 221 Issue 21, p1-6, 6p

مصطلحات موضوعية: MODULATION-doped field-effect transistors, MONOLITHIC microwave integrated circuits, DIELECTRIC devices, SILICON nitride, CHEMICAL vapor deposition, SILICON nitride films

19

Dissertation/ Thesis

Ferromagnetic resonant tunneling diodes : physics and applications

المؤلفون: Ganguly, Swaroop

مصطلحات موضوعية: Diodes, Semiconductor, Tunneling (Physics)

وصف الملف: electronic

الاتاحة: http://hdl.handle.net/2152/2424

View record in Networked Digital Library of Theses & Dissertations

20

Ferromagnetic resonant tunneling diodes physics and applications

المؤلفون: Ganguly, Swaroop.

مصطلحات موضوعية: Diodes, Semiconductor. Tunneling (Physics)

الاتاحة: http://repositories.lib.utexas.edu/bitstream/handle/2152/2424/gangulyd59974.pdf

View record in Networked Digital Library of Theses & Dissertations

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