المؤلفون: Galloway, K. F.

الوصول للمادة أونلاين: https://purl.fdlp.gov/GPO/gpo98314
https://doi.org/10.6028/NBS.IR.81-2230-3
https://www.govinfo.gov/content/pkg/GOVPUB-C13-5a2216e6a3b5bf58c562db7cd6faa73f/pdf/GOVPUB-C13-5a2216e6a3b5bf58c562db7cd6faa73f.pdf

المؤلفون: Galloway, K. F.

الوصول للمادة أونلاين: https://purl.fdlp.gov/GPO/gpo104952
https://doi.org/10.6028/NBS.IR.77-1235
https://www.govinfo.gov/content/pkg/GOVPUB-C13-f44c2866887fc7c091d26c47a5736dc6/pdf/GOVPUB-C13-f44c2866887fc7c091d26c47a5736dc6.pdf

المؤلفون: Galloway, K. F.

الوصول للمادة أونلاين: https://purl.fdlp.gov/GPO/gpo99148
https://doi.org/10.6028/NBS.IR.76-1093
https://www.govinfo.gov/content/pkg/GOVPUB-C13-6f4680192b1bd2d95c71396a30c37c91/pdf/GOVPUB-C13-6f4680192b1bd2d95c71396a30c37c91.pdf

المؤلفون: Johnson, R. A., Witulski, A. F., Ball, D. R., Galloway, K. F., Sternberg, A. L., Reed, R. A., Schrimpf, R. D., Alles, J. M., Lauenstein, J. M., Javanainen, A., Raman, A., Chakraborty, P. S., Arslanbekov, R. R.

مصطلحات موضوعية: Schottky diodes, Silicon carbide, single-event effects, vertical MOSFET, elektroniikkakomponentit, puolijohteet, säteilyfysiikka, diodit

وصف الملف: application/pdf; 135-139; fulltext

Relation: IEEE Transactions on Nuclear Science; 67; CONVID_33260673

الاتاحة: http://urn.fi/URN:NBN:fi:jyu-201910174498

المؤلفون: Ball, D. R., Sierawski, B. D., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Javanainen, Arto, Lauenstein, J-M.

مصطلحات موضوعية: silicon carbide, SiC, power, MOSFET, heavy ion, neutron, cross-section, failure in time, FIT, single event burnout, SEB, Monte Carlo, MRED, säteilyfysiikka, transistorit

وصف الملف: application/pdf; 337-343; fulltext

Relation: IEEE Transactions on Nuclear Science; 66; CONVID_28818479

الاتاحة: http://urn.fi/URN:NBN:fi:jyu-201912135275

المؤلفون: Cadena, R. M., Ball, D. R., Zhang, E. X., Islam, S., Senarath, A., McCurdy, M. W., Farzana, E., Speck, J. S., Karom, N., O’Hara, A., Tuttle, B. R., Pantelides, S. T., Witulski, A. F., Galloway, K. F., Alles, M. L., Reed, R. A., Fleetwood, D. M., Schrimpf, R. D.

المساهمون: Air Force Center of Excellence in Radiation Effects

المصدر: IEEE Transactions on Nuclear Science ; volume 70, issue 4, page 363-369 ; ISSN 0018-9499 1558-1578

الاتاحة: http://dx.doi.org/10.1109/tns.2023.3237979
http://xplorestaging.ieee.org/ielx7/23/10103954/10020170.pdf?arnumber=10020170

المؤلفون: Witulski, A. F., Arslanbekov, R., Raman, A., Schrimpf, R. D., Sternberg, A., Galloway, K. F., Javanainen, Arto, Grider, D., Lichtenwalner, D. J., Hull, B.

مصطلحات موضوعية: single event effects, heavy ions, silicon carbide, power diodes, junction barrier schottky (JBS) diode, single-event burnout, thermal coefficients of silicon carbide

وصف الملف: 256-261; application/pdf

Relation: IEEE Transactions on Nuclear Science; 65; CONVID_27817017

الاتاحة: http://urn.fi/URN:NBN:fi:jyu-201801251329

المؤلفون: Galloway, K. F, Witulski, A. F, Schrimpf, R. D, Sternberg, A. L, Ball, D. R, Javanainen, A, Reed, R. A, Sierawski, B. D, Lauenstein, J.-M

مصطلحات موضوعية: Chemistry And Materials (General), Electronics And Electrical Engineering

Relation: Reliability Concerns for Flying SiC Power MOSFETs in Space

URL الوصول: https://ntrs.nasa.gov/citations/20180002440

المؤلفون: Ball, D. R., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Hutson, J. M., Lauenstein, J.-M.

المساهمون: NASA ESI Program, NEPP Program at NASA Goddard

المصدر: IEEE Transactions on Nuclear Science ; volume 68, issue 7, page 1430-1435 ; ISSN 0018-9499 1558-1578

الاتاحة: http://dx.doi.org/10.1109/tns.2021.3079846
http://xplorestaging.ieee.org/ielx7/23/9489263/09429247.pdf?arnumber=9429247

المؤلفون: Muthuseenu, K., Barnaby, H. J., Galloway, K. F., Koziukov, A. E., Maksimenko, T. A., Vyrostkov, M. Y., Bu-Khasan, K. B., Kalashnikova, A. A., Privat, A.

المساهمون: Defense Threat Reduction Agency

المصدر: IEEE Transactions on Electron Devices ; volume 68, issue 8, page 4004-4009 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2021.3091952
http://xplorestaging.ieee.org/ielx7/16/9493680/09477631.pdf?arnumber=9477631

المؤلفون: Muthuseenu, K., Barnaby, H. J., Galloway, K. F., Koziukov, A. E., Maksimenko, T. A., Vyrostkov, M. Y., Bu-Khasan, K. B., Kalashnikova, A. A., Privat, A.

المساهمون: Defense Threat Reduction Agency

المصدر: IEEE Transactions on Nuclear Science ; volume 68, issue 5, page 611-616 ; ISSN 0018-9499 1558-1578

الاتاحة: http://dx.doi.org/10.1109/tns.2021.3053168
http://xplorestaging.ieee.org/ielx7/23/9434988/09328811.pdf?arnumber=9328811

المؤلفون: Ball, D. R., Hutson, J. M., Javanainen, A., Lauenstein, J.-M., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Sierawski, B. D., Witulski, A. F., Reed, R. A., Schrimpf, R. D.

المساهمون: National Aeronautics and Space Administration, NASA Goddard through the NASA Electronic Parts and Packaging Program, University of Jyväskylä through the European Space Agency/European Space Research and Technology Centre (ESA/ESTEC) Program, Academy of Finland

المصدر: IEEE Transactions on Nuclear Science ; volume 67, issue 1, page 22-28 ; ISSN 0018-9499 1558-1578

الاتاحة: http://dx.doi.org/10.1109/tns.2019.2955922
http://xplorestaging.ieee.org/ielx7/23/8974631/08915993.pdf?arnumber=8915993

المؤلفون: Brews, J. R., Allenspach, M., Schrimpf, R. D., Galloway, K. F., Titus, J. L., Wheatley, C. F.

Relation: https://doi.org/10.1109/23.273457; oai:zenodo.org:1261261

الاتاحة: https://doi.org/10.1109/23.273457

المؤلفون: Barnaby, H. J., Schrimpf, R. D., Galloway, K. F., Li, X., Yang, J., Liu, C.

المساهمون: JPL/NASA prime, National Natural Science Foundation of China

المصدر: IEEE Transactions on Nuclear Science ; volume 64, issue 1, page 149-155 ; ISSN 0018-9499 1558-1578

الاتاحة: http://dx.doi.org/10.1109/tns.2016.2615628
http://xplorestaging.ieee.org/ielx7/23/7869239/07586134.pdf?arnumber=7586134

المؤلفون: Galloway, K. F.

المصدر: 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology ; volume 33, page 1-4

الاتاحة: http://dx.doi.org/10.1109/icsict.2012.6467626
http://xplorestaging.ieee.org/ielx7/6459619/6466666/06467626.pdf?arnumber=6467626

المؤلفون: Zupac, D., Galloway, K. F., Schrimpf, R. D., Augier, P.

المصدر: Journal of Applied Physics. 3/15/1993, Vol. 73 Issue 6, p2910. 6p. 6 Graphs.

مصطلحات موضوعية: *METAL oxide semiconductors, *POWER transistors, *IRRADIATION, *ANNEALING of metals

المؤلفون: Saigne, F., Dusseau, L., Albert, L., Fesquet, J., Gasiot, J., David, J. P., Ecoffet, R., Schrimpf, R. D., Galloway, K. F.

المصدر: Journal of Applied Physics; 10/15/1997, Vol. 82 Issue 8, p4102, 6p, 13 Graphs

مصطلحات موضوعية: METAL oxide semiconductors, ANNEALING of metals

المؤلفون: Boch, J., Saigné, F., Schrimpf, R. D., Dusseau, L., David, J.-P., Galloway, K. F., Fesquet, J., Gasiot, J., Ecoffet, R.

المساهمون: Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Vanderbilt University Nashville, Centre National d'Études Spatiales Toulouse (CNES)

المصدر: Conférence IEEE-NSREC2002 ; https://hal.science/hal-02019332 ; Conférence IEEE-NSREC2002, 2002, Phoenix, United States

مصطلحات موضوعية: [SPI.TRON]Engineering Sciences [physics]/Electronics

جغرافية الموضوع: Phoenix, United States

Relation: hal-02019332; https://hal.science/hal-02019332

الاتاحة: https://hal.science/hal-02019332

المؤلفون: Galloway, K. F., Pease, R. L., Schrimpf, R. D., Emily, D. W.

المصدر: IEEE Transactions on Nuclear Science ; volume 60, issue 3, page 1731-1739 ; ISSN 0018-9499 1558-1578

الاتاحة: http://dx.doi.org/10.1109/tns.2013.2244615
http://xplorestaging.ieee.org/ielx7/23/6530644/06478853.pdf?arnumber=6478853

المؤلفون: Li, Xingji, Yang, Jianqun, Fleetwood, Daniel M., Liu, Chaoming, Wei, Yidan, Barnaby, H. J., Galloway, K. F.

المصدر: IEEE Transactions on Nuclear Science; Jun2018, Vol. 65 Issue 6, p1271-1276, 6p

مصطلحات موضوعية: ELECTRONICS, IRRADIATION, FIELD-effect transistors, ELECTRONS, TRANSISTORS