نتائج البحث - "Gabilli, E."

1

Academic Journal

Structural and electrical characteristics of platinum-silicide-silicon contacts as influenced by sputter etching and annealing ambient.

المؤلفون: Severi, M., Gabilli, E., Guerri, S., Celotti, G.

المصدر: Journal of Applied Physics; May1977, Vol. 48 Issue 5, p1998-2003, 6p

2

Academic Journal

Annealing of phosphorus implanted silicon wafers by multiscanning electron beam: Solar cells application.

المؤلفون: Bentini, G. G., Galloni, R., Gabilli, E., Nipoti, R., Olzi, E., Servidori, M., Turisini, G., Zignani, F.

المصدر: Journal of Applied Physics; Nov1981, Vol. 52 Issue 11, p6735-6742, 8p

3

Academic Journal

Fabrication of step-edge structures onR-plane sapphire using a selective wet etch process

المؤلفون: Levy, P., Nicoletti, S., Correra, L., Cervera, M., Bianconi, M., Biscarini, F., Corticelli, F., Gabilli, E.

المصدر: Il Nuovo Cimento D ; volume 19, issue 8-9, page 1389-1395 ; ISSN 0392-6737 1826-9893

الاتاحة: http://dx.doi.org/10.1007/bf03185437
http://link.springer.com/content/pdf/10.1007/BF03185437.pdf
http://link.springer.com/article/10.1007/BF03185437/fulltext.html
http://link.springer.com/content/pdf/10.1007/BF03185437

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4

Academic Journal

Spectral behavior of solar cells based on the ‘‘junction near local defect layer’’ design

المؤلفون: Summonte, C., Biavati, M., Gabilli, E., Galloni, R., Guerri, S., Rizzoli, R., Zignani, F.

المصدر: Applied Physics Letters ; volume 63, issue 6, page 785-787 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.109907
https://pubs.aip.org/aip/apl/article-pdf/63/6/785/18497071/785_1_online.pdf

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5

Academic Journal

Arsenic ion implantation through Mo and Mo silicide layers for shallow junction formation

المؤلفون: Angelucci, R., Solmi, S., Armigliato, A., Gabilli, E., Govoni, D., Merli, M., Poggi, A.

المصدر: Solid-State Electronics ; volume 35, issue 7, page 941-947 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/0038-1101(92)90323-5
https://api.elsevier.com/content/article/PII:0038110192903235?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:0038110192903235?httpAccept=text/plain

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6

Conference

Electrical Characterization of Ion Implanted, Thermally Annealed TiN Films Acting as Diffusion Barriers on Shallow Junction Silicon Devices

المؤلفون: Armigliato A., Finetti M., Gabilli E., Guerri S., Ostoja P., Sabato G., SCORZONI, Andrea

المساهمون: Armigliato, A., Finetti, M., Gabilli, E., Guerri, S., Ostoja, P., Sabato, G., Scorzoni, Andrea

مصطلحات موضوعية: diffusion barrier, contact resistivity

وصف الملف: STAMPA

Relation: ispartofbook:MRS Symposium Proceedings, 1985; MRS Symposium, Spring Meeting; volume:45; firstpage:183; lastpage:188; http://hdl.handle.net/11391/923319; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-0022181733; http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8165069

الاتاحة: http://hdl.handle.net/11391/923319
https://doi.org/10.1557/PROC-45-183
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8165069

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7

Academic Journal

Fabrication of step-edge structures on R-plane sapphire using a selective wet etch process.

المؤلفون: Levy, P., Nicoletti, S., Correra, L., Cervera, M., Bianconi, M., Biscarini, F., Corticelli, F., Gabilli, E.

المصدر: Il Nuovo Cimento della Societa Italiana di Fisica: D; 1997, Vol. 19 Issue 8/9, p1389-1395, 7p

8

Book

Effect of Diffuse Scattering in the Strain Profile Determination by Double Crystal X-Ray Diffraction

المؤلفون: Cembali, F ., Seevidoei, M., Gabilli, E ., Lotti, R .

المصدر: January 16 ; page 225-235

الاتاحة: http://dx.doi.org/10.1515/9783112495148-021
https://www.degruyter.com/document/doi/10.1515/9783112495148-021/xml
https://www.degruyter.com/document/doi/10.1515/9783112495148-021/pdf

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9

Book

Influence of Chlorine Implantation on Phosphorus Diffusivity and Oxidation-Induced Defects in Silicon

المؤلفون: Armigliato, A., Solmi, S., Donolato, C., Negrini, P., Gabilli, E ., Garulli, A., Kittler, M.

المصدر: January 16 ; page 207-217

الاتاحة: http://dx.doi.org/10.1515/9783112495148-019
https://www.degruyter.com/document/doi/10.1515/9783112495148-019/xml
https://www.degruyter.com/document/doi/10.1515/9783112495148-019/pdf

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10

Academic Journal

Effect of diffuse scattering in the strain profile determination by double crystal X-ray diffraction

المؤلفون: Cembali, F., Servidori, M., Gabilli, E., Lotti, R.

المصدر: physica status solidi (a) ; volume 87, issue 1, page 225-233 ; ISSN 0031-8965 1521-396X

الاتاحة: http://dx.doi.org/10.1002/pssa.2210870123
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.2210870123
https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.2210870123

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11

Academic Journal

Ambiguity in the Strain Profile Determination by Simulation of Double Crystal X-Ray Rocking Curves

المؤلفون: Cembali, F., Gabilli, E., Lotti, R., Servtdori, M., Zani, A.

المصدر: physica status solidi (a) ; volume 96, issue 1, page K31-K34 ; ISSN 0031-8965 1521-396X

الاتاحة: http://dx.doi.org/10.1002/pssa.2210960151
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.2210960151
https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.2210960151

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12

Academic Journal

As and B Ion Implantation Through Mo and into Mo-Silicide Layers for Shallow Junction Formation

المؤلفون: Angelucci, R., Merli, M., Solmi, S., Armigliato, A., Gabilli, E., Govoni, D., Poggi, A.

المصدر: MRS Proceedings ; volume 157 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-157-751
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400453273

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13

Academic Journal

A Self-Annealing Technique for Simultaneous Titanium Silicide and N + /P Junction Formation

المؤلفون: Finetti, Manuela, Gabilli, E., Lotti, R., Lulli, G., Merli, P.G., Nipoti, R., Antisari, M. Vittori

المصدر: MRS Proceedings ; volume 45 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-45-177
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400511993

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14

Academic Journal

Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon

المؤلفون: Angelucci, R., Gabilli, E., Lotti, R., Negrini, P., Servidori, M., Solmi, S., Anderle, M.

المصدر: MRS Proceedings ; volume 74 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-74-505
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400548933

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15

Academic Journal

Structural Characterization of Dynamic Annealing Effects of P + Implanted SI

المؤلفون: Berti, Marina, Drigo, A.V., Gabilli, E., Lotti, R., Lulli, G., Merli, P.G., Antisari, M. Vittori

المصدر: MRS Proceedings ; volume 45 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-45-97
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400511877

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16

Academic Journal

Transmission Electron Microscopy of Self-Annealed Ion Implanted Silicon

المؤلفون: Gabilli, E., Lotti, R., Lulli, G., Merli, P. G., Antisari, M. Vittori

المصدر: Japanese Journal of Applied Physics ; volume 24, issue 1A, page L14 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.1143/jjap.24.l14
https://iopscience.iop.org/article/10.1143/JJAP.24.L14
https://iopscience.iop.org/article/10.1143/JJAP.24.L14/pdf

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17

Academic Journal

Self-annealed ion implanted solar cells

المؤلفون: Gabilli, E., Lotti, R., Merli, P. G., Nipoti, R., Ostoja, P.

المصدر: Applied Physics Letters ; volume 41, issue 10, page 967-968 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.93357
https://pubs.aip.org/aip/apl/article-pdf/41/10/967/18447330/967_1_online.pdf

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18

Academic Journal

Reduction of phosphorus transient enhanced diffusion due to extended defects in ion implanted silicon

المؤلفون: Servidori, M., Cembali, F., Fabbri, R., Gabilli, E., Negrini, P., Solmi, S., Zaumseil, P., Winter, U., Anderle, M., Canteri, R.

المصدر: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms ; volume 39, issue 1-4, page 347-351 ; ISSN 0168-583X

الاتاحة: http://dx.doi.org/10.1016/0168-583x(89)90800-8
https://api.elsevier.com/content/article/PII:0168583X89908008?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:0168583X89908008?httpAccept=text/plain

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19

Academic Journal

Self annealing effects in P+ implanted silicon

المؤلفون: Berti, M., Drigo, A.V., Gabilli, E., Lotti, R., Lulli, G., Merli, P.G., Vittori Antisari, M.

المصدر: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms ; volume 19-20, page 475-479 ; ISSN 0168-583X

الاتاحة: http://dx.doi.org/10.1016/s0168-583x(87)80094-0
https://api.elsevier.com/content/article/PII:S0168583X87800940?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0168583X87800940?httpAccept=text/plain

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20

Fabrication of step-edge structures on R-plane sapphire using a selective wet etch process

المؤلفون: Levy, P., Nicoletti, S., Correra, L., Cervera, M., Marco Bianconi, Biscarini, F., Corticelli, F., Gabilli, E.

المصدر: ResearcherID
Scopus-Elsevier

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::54f6502a9ffdb552c69ad3169d834d4c
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1997YE56300055&KeyUID=WOS:A1997YE56300055

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