المؤلفون: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ), Khanna, Rohit ( author ), Pearton, S.J. ( author ), Ren, F. ( author ), Kravchenko, I. ( author ), Kao, C.J. ( author ), Chi, G.C. ( author )

مصطلحات موضوعية: Ohmic contact formation, Ti/Al/W 2B/Ti/Au metallization scheme, GaN-based power electronic devices

وصف الملف: Pages 1826-1832

Relation: Applied Surface Science; S0169-4332(05)00589-1; http://ufdc.ufl.edu/LS00515268/00001

الاتاحة: https://doi.org/10.1016/j.apsusc.2005.03.143
http://ufdc.ufl.edu/LS00515268/00001