المؤلفون: Mohit Kumar, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier, Julien Buckley

المصدر: Crystals, Vol 15, Iss 1, p 56 (2025)

مصطلحات موضوعية: p++-InGaN, contact resistivity, Schottky barrier height, polarization effects, carrier transport mechanism, GaN-based heterostructures, Crystallography, QD901-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2073-4352/15/1/56; https://doaj.org/toc/2073-4352

URL الوصول: https://doaj.org/article/0d3b57e52abb48c58e8a1dc1465ebb83

المؤلفون: Wenping Gu, Xiaobo Xu, Lin Zhang, Zhiyuan Gao, Xiaochuan Hu, Zan Zhang

المصدر: Crystals, Vol 8, Iss 5, p 198 (2018)

مصطلحات موضوعية: GaN-based heterostructures, neutron-irradiation, structural defects, annealing, Crystallography, QD901-999

Relation: http://www.mdpi.com/2073-4352/8/5/198; https://doaj.org/toc/2073-4352; https://doaj.org/article/a1b5139b95184a71b1197c7852e323cd

الاتاحة: https://doi.org/10.3390/cryst8050198
https://doaj.org/article/a1b5139b95184a71b1197c7852e323cd

المؤلفون: A. Minj, CAVALCOLI, DANIELA, CAVALLINI, ANNA

المساهمون: A. Minj, D.Cavalcoli, A.Cavallini

مصطلحات موضوعية: AFM, CONDUCTIVE AFM, CURRENT VOLTAGE ANALYSES, GAN BASED HETEROSTRUCTURES, IMAGE FORCE

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/pmid/22369762; info:eu-repo/semantics/altIdentifier/wos/WOS:000301661700015; volume:23; firstpage:115701; lastpage:115707; numberofpages:6; journal:NANOTECHNOLOGY; http://hdl.handle.net/11585/113709; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84857828080

الاتاحة: http://hdl.handle.net/11585/113709
https://doi.org/10.1088/0957-4484/23/11/115701

المؤلفون: Albert Minj, Daniela Cavalcoli, Anna Cavallini

المساهمون: A. Minj, D.Cavalcoli, A.Cavallini

مصطلحات موضوعية: Materials science, business.industry, Mechanical Engineering, Analytical chemistry, Bioengineering, Heterojunction, Thermionic emission, General Chemistry, Method of image charges, Thermal conduction, CURRENT VOLTAGE ANALYSES, Mechanics of Materials, GAN BASED HETEROSTRUCTURES, Optoelectronics, Rectangular potential barrier, General Materials Science, Electrical and Electronic Engineering, AFM, CONDUCTIVE AFM, business, Fermi gas, Electrical conductor, IMAGE FORCE, Voltage

وصف الملف: STAMPA

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fab3acf1abc834147b49929542caa4f3
http://hdl.handle.net/11585/113709

المؤلفون: Lisesivdin, S.B., Balkan, N., Makarovsky O., Pataǹ, A., Yildiz, A., Caliskan, M.D., Kasap, M., Ozcelik, S., Ozbay, E.

المصدر: Journal of Applied Physics

مصطلحات موضوعية: GaN-based heterostructures, Heterostructures, Sheet electron density, Shubnikov-de Haas, Spin-orbit couplings, Split energy, Sub-band, Two-dimensional electron gas (2DEG), Zero fields, Zero-field spin splitting, Carrier concentration, Crystals, Electron gas, Electrons, Gallium alloys, Gallium nitride, Semiconducting gallium, Spin dynamics, Two dimensional electron gas, Phase interfaces

وصف الملف: application/pdf

Relation: http://dx.doi.org/10.1063/1.3120782; 218979; http://hdl.handle.net/11693/22719

الاتاحة: http://hdl.handle.net/11693/22719
https://doi.org/10.1063/1.3120782