المؤلفون: Pargam Vashishtha, Pukhraj Prajapat, Lalit Goswami, Aditya Yadav, Akhilesh Pandey, Govind Gupta

المصدر: Electronic Materials, Vol 3, Iss 4, Pp 357-367 (2022)

مصطلحات موضوعية: AlN buffer, GaN epitaxy, temperature modulation, nano obelisks, nanopyramids, nanowax/wane, Instruments and machines, QA71-90

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2673-3978/3/4/29; https://doaj.org/toc/2673-3978

URL الوصول: https://doaj.org/article/aace0bf21e454f568f0f78327e29576e

المؤلفون: Yi Zhang, Guangmin Zhu, Jiangbo Wang, Zichun Le

المصدر: Materials; Volume 16; Issue 3; Pages: 1104

مصطلحات موضوعية: composited patterned substrate, GaN epitaxy, sputtering AlN, light-emitting diode

وصف الملف: application/pdf

Relation: Optics and Photonics; https://dx.doi.org/10.3390/ma16031104

الاتاحة: https://doi.org/10.3390/ma16031104

المؤلفون: He Guan, Guiyu Shen, Shibin Liu, Chengyu Jiang, Jingbo Wu

المصدر: Micromachines; Volume 14; Issue 1; Pages: 168

مصطلحات موضوعية: AlGaN/GaN epitaxy, HEMT, simulation

وصف الملف: application/pdf

Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi14010168

الاتاحة: https://doi.org/10.3390/mi14010168

المؤلفون: Martin Velazquez-Rizo, Pavel Kirilenko, Daisuke Iida, Zhe Zhuang, Kazuhiro Ohkawa

المصدر: Crystals; Volume 12; Issue 2; Pages: 211

مصطلحات موضوعية: GaN, photocatalysis, surface states, NiO/GaN epitaxy

وصف الملف: application/pdf

Relation: Materials for Energy Applications; https://dx.doi.org/10.3390/cryst12020211

الاتاحة: https://doi.org/10.3390/cryst12020211

المؤلفون: Fay, Mike W., Harrison, Ian, Larkins, Eric C., Novikov, Sergei V., Foxon, C.T., Brown, Paul D.

المساهمون: McVitie, Stephen, McComb, David

مصطلحات موضوعية: EELS TEM GaN Epitaxy Doping PAMBE

Relation: Fay, Mike W., Harrison, Ian, Larkins, Eric C., Novikov, Sergei V., Foxon, C.T. and Brown, Paul D. (2004) TEM assessment of As-doped GaN epitaxial layers grown on sapphire. In: Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003. Institute of Physics conference series (179). Institute of Physics Publishing, Bristol, pp. 23-26. ISBN 0750309679

الاتاحة: http://eprints.nottingham.ac.uk/1442/

المؤلفون: Zubel, Irena, Kramkowska, Małgorzata, Ninierza, Tomasz

المساهمون: Gaj, Miron. Redakcja, Urbańczyk, Wacław. Redakcja

المصدر: ; http://aleph.bg.pwr.wroc.pl/F/?func=find-b&request=000122307+&find_code=SYS&adjacent=N&local_base=TUR&x=64&y=13&filter_code_1=WLN&filter_request_1=&filter_code_2=WYR&filter_request_2=&filter_code_3=WYR&filter_request_3=&filter_code_4=WFT&filter_request_4=&filter_code_5=WSB&filter_request_5= ; http://opticaapplicata.pwr.edu.pl/

مصطلحات موضوعية: optyka, textured silicon substrates, anisotropic etching, GaN epitaxy

Relation: oai:dbc.wroc.pl:publication:110838; Optica Applicata; Optica Applicata, Vol. 39, 2009; Optica Applicata, Vol. 39, 2009, nr 4; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki; https://dbc.wroc.pl/dlibra/docmetadata?showContent=true&id=62182; oai:dbc.wroc.pl:62182

الاتاحة: https://dbc.wroc.pl/dlibra/docmetadata?showContent=true&id=62182

المؤلفون: Stemmer, Jens

مصطلحات موضوعية: AIN intermediate layers, Dewey Decimal Classification::600 | Technik::620 | Ingenieurwissenschaften und Maschinenbau, ddc:620, AIGaN/GaN HEMTs, GaN epitaxy

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5819d5c303faa5e4265967a29cda031

المؤلفون: Li, Z.-F., Lu, W., Ye, H.-J., Yuan, X.-Z., Shen, X.-C., Li, G., Chua, S.J.

المساهمون: ELECTRICAL ENGINEERING

المصدر: Scopus

مصطلحات موضوعية: α-GaN epitaxy thin film, Carrier contration, IR reflection spectra, LO phonon-plasmon coupling mode, Mobility, Raman spectra

Relation: Li, Z.-F.,Lu, W.,Ye, H.-J.,Yuan, X.-Z.,Shen, X.-C.,Li, G.,Chua, S.J. (2000-08). Optical spectroscopy study on carrier concentration and mobility in GaN. Wuli Xuebao/Acta Physica Sinica 49 (8) : 1618-1619. ScholarBank@NUS Repository.; http://scholarbank.nus.edu.sg/handle/10635/80904; NOT_IN_WOS

الاتاحة: http://scholarbank.nus.edu.sg/handle/10635/80904

المؤلفون: Łukasiewicz, T., Majchrowski, A., Mierczyk, Z.

المصدر: Opto - Electronics Review.

مصطلحات موضوعية: oxide single crystals growth, diode pumped solid state lasers, nonlinear absorbers, laser frequency conversion, acoustooptics, Nd:YAG, CLBO, BBO, GdCOB, Nd:YVO, Nd:KGW, substrates for GaN epitaxy, TeO2

URL الوصول: http://yadda.icm.edu.pl/baztech/element/bwmeta1.element.baztech-article-BWA2-0005-0050

المؤلفون: van Erp, Remco Franciscus Peter

المساهمون: Matioli, Elison de Nazareth

مصطلحات موضوعية: Manifold microchannels, Microfluidics, Power electronics, Power ICs, Thermal management, Microscale heat transfer, Microchannel cooling, GaN-on-Si, GaN epitaxy

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6faac07b68ff048626bbe44e039aebb0
https://infoscience.epfl.ch/record/294601

المؤلفون: Figge, Stephan

مصطلحات الفهرس: GaN, Epitaxy, laser diode

URL: http://elib.suub.uni-bremen.de/peid=D00106673

المؤلفون: Figge, Stephan

مصطلحات الفهرس: GaN, Epitaxy, laser diode

URL: http://elib.suub.uni-bremen.de/peid=D00106673

المؤلفون: Figge, Stephan

مصطلحات الفهرس: GaN, Epitaxy, laser diode

URL: http://elib.suub.uni-bremen.de/peid=D00106673

المؤلفون: McVitie, Stephen, McComb, David, Fay, Mike W., Harrison, Ian, Larkins, Eric C., Novikov, Sergei V., Foxon, C.T., Brown, Paul D.

مصطلحات الفهرس: EELS TEM GaN Epitaxy Doping PAMBE, Book Section, PeerReviewed

URL: http://eprints.nottingham.ac.uk/1442/
http://eprints.nottingham.ac.uk/1442

المؤلفون: McVitie, Stephen, McComb, David, Fay, Mike W., Harrison, Ian, Larkins, Eric C., Novikov, Sergei V., Foxon, C.T., Brown, Paul D.

مصطلحات الفهرس: EELS TEM GaN Epitaxy Doping PAMBE, Book Section, PeerReviewed

URL: http://eprints.nottingham.ac.uk/1442/
http://eprints.nottingham.ac.uk/1442

المؤلفون: McVitie, Stephen, McComb, David, Fay, Mike W., Harrison, Ian, Larkins, Eric C., Novikov, Sergei V., Foxon, C.T., Brown, Paul D.

مصطلحات الفهرس: EELS TEM GaN Epitaxy Doping PAMBE, Book Section, PeerReviewed

URL: http://eprints.nottingham.ac.uk/1442/
http://eprints.nottingham.ac.uk/1442