يعرض 1 - 20 نتائج من 152 نتيجة بحث عن '"GERMANIUM silicide"', وقت الاستعلام: 0.85s تنقيح النتائج
  1. 1
    Academic Journal
    Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based Biosensors.

    المؤلفون: Kanungo, Sayan1, Chattopadhyay, Sanatan2, Gupta, Partha Sarathi1, Sinha, Kunal1, Rahaman, Hafizur1

    المصدر: IEEE Transactions on Electron Devices. Jun2016, Vol. 63 Issue 6, p2589-2596. 8p.

    مصطلحات موضوعية: GERMANIUM silicide, DIELECTRICS, QUANTUM tunneling, FIELD-effect transistors, BIOSENSORS


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  2. 2
    Academic Journal
    Effect of Ge/Si substitutions on the local geometry of Si framework sites in zeolites: A combined high resolution 29Si MAS NMR and DFT/MM study on zeolite Beta polymorph C (BEC).

    المؤلفون: Whittleton, Sarah R.1, Vicente, Aurelie2, Fernandez, Christian2, Rastegar, Somayeh F.1, Fishchuk, Anna V.1, Sklenak, Stepan1 stepan.sklenak@jh-inst.cas.cz

    المصدر: Microporous & Mesoporous Materials. Sep2018, Vol. 267, p124-133. 10p.

    مصطلحات موضوعية: *GERMANIUM silicide, *SUBSTITUTION reactions, *ZEOLITES, *DENSITY functional theory, *NUCLEAR magnetic resonance spectroscopy, *POLYMORPHISM (Crystallography)


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  3. 3
    Academic Journal
    Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors.

    المؤلفون: Bae, Tae-Eon1, Kato, Kimihiko1, Suzuki, Ryota1, Nakane, Ryosho1, Takenaka, Mitsuru1, Takagi, Shinichi1

    المصدر: Applied Physics Letters. 8/6/2018, Vol. 113 Issue 6, pN.PAG-N.PAG. 4p. 1 Diagram, 5 Graphs.

    مصطلحات موضوعية: *ELECTRIC properties of germanium silicide, *QUANTUM tunneling, *FIELD-effect transistors, *FERMI level, *METAL oxide semiconductors


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  4. 4
    Academic Journal
    Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(0 0 1) heterostructures.

    المؤلفون: Bolkhovityanov, Yu.B.1, Deryabin, A.S.1, Gutakovskii, A.K.1, Sokolov, L.V.1 sokolov@isp.nsc.ru

    المصدر: Journal of Crystal Growth. Feb2018, Vol. 483, p265-268. 4p.

    مصطلحات موضوعية: *EDGE dislocations, *GERMANIUM silicide, *HETEROSTRUCTURES, *CRYSTAL growth, *BUFFER layers


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  5. 5
    Academic Journal
    Fabrication of high-quality strain relaxed SiGe(1 1 0) films by controlling defects via ion implantation.

    المؤلفون: Kato, M.1 g1581306@tcu.ac.jp, Arimoto, K.2, Yamanaka, J.2, Nakagawa, K.2, Sawano, K.1

    المصدر: Journal of Crystal Growth. Nov2017, Vol. 477, p197-200. 4p.

    مصطلحات موضوعية: *SEMICONDUCTORS, *GERMANIUM silicide films, *MOLECULAR beam epitaxy, *CRYSTAL structure, *ION implantation, *CRYSTAL defects


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  6. 6
    Academic Journal
    Temperature depopulation of the GeSi/Si quantum dots with non-equilibrium charge carriers.

    المؤلفون: Sofronov, A.N.1 sofronov@rphf.spbstu.ru, Vorobjev, L.E.1, Firsov, D.A.1, Balagula, R.M.1, Tonkikh, A.A.2,3

    المصدر: Superlattices & Microstructures. Jul2017, Vol. 107, p228-233. 6p.

    مصطلحات موضوعية: *GERMANIUM silicide, *TEMPERATURE effect, *SILICON, *QUANTUM dots, *DENSITY of states, *VALENCE bands


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  7. 7
    Academic Journal
    Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires.

    المؤلفون: Conesa-Boj, S.1,2, Li, A.1,2, Koelling, S.2, Brauns, M.3, Ridderbos, J.3, Nguyen, T. T.3, Verheijen, M. A.1,4, Koenraad, P. M.2, Zwanenburg, F. A.3, Bakkers, E. P. A. M.1,2

    المصدر: Nano Letters. Apr2017, Vol. 17 Issue 4, p2259-2264. 6p.

    مصطلحات موضوعية: *GERMANIUM silicide, *HETEROSTRUCTURES, *NANOWIRES, *STRAINS & stresses (Mechanics), *CRYSTAL defects, *HOLE mobility


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  8. 8
    Academic Journal
    Ge redistribution in SiO2/SiGe structures under thermal oxidation: Dynamics and predictions.

    المؤلفون: Long, Ethan, Azarov, Alexander, Klo\w, Frode, Galeckas, Augustinas, Yu Kuznetsov, Andrej, Diplas, Spyridon

    المصدر: Journal of Applied Physics; Jan2012, Vol. 111 Issue 2, p024308, 10p, 11 Graphs

    مصطلحات موضوعية: OXIDATION, GERMANIUM, SILICA, THIN films, GERMANIUM silicide, SIMULATION methods & models, GIBBS' free energy, SUBSTRATES (Materials science), GERMANIUM silicide films


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  9. 9
    Academic Journal
    Experimental observation of motion of edge dislocations in Ge/GeSi/Si(001) ( x = 0.2-0.6) heterostructures.

    المؤلفون: Bolkhovityanov, Yu.1 bolkhov@isp.nsc.ru, Gutakovskii, A.1, Deryabin, A.1, Sokolov, L.1

    المصدر: Journal of Experimental & Theoretical Physics. Nov2016, Vol. 123 Issue 5, p832-837. 6p.

    مصطلحات موضوعية: *GERMANIUM silicide, *EDGE dislocations, *HIGH resolution electron microscopy, *BUFFER layers, *ANNEALING of metals, *HETEROSTRUCTURES


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  10. 10
    Academic Journal
    The electronic properties of bare and alkali metal adsorbed two-dimensional GeSi alloy sheet.

    المؤلفون: Qiu, Wenhao1, Ye, Han1 Han_ye@bupt.edu.cn, Yu, Zhongyuan1, Liu, Yumin1

    المصدر: Superlattices & Microstructures. Sep2016, Vol. 97, p250-257. 8p.

    مصطلحات موضوعية: *ALKALI metals, *GERMANIUM silicide, *CHEMICAL bonds, *METAL absorption & adsorption, *SURFACE chemistry


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  11. 11
    Academic Journal
    Numerical study of liquid phase diffusion growth of SiGe subjected to accelerated crucible rotation.

    المؤلفون: Sekhon, M.1 mssekhon@uvic.ca, Lent, B.1, Dost, S.1

    المصدر: Journal of Crystal Growth. Mar2016, Vol. 438, p90-98. 9p.

    مصطلحات موضوعية: *GERMANIUM silicide, *CRYSTAL growth, *HEAT convection, *TRAPEZOIDS, *CRYSTAL structure, *NUMERICAL analysis


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  12. 12
    Academic Journal
    Evolution of thermal, structural, and optical properties of SiGe superlattices upon thermal treatment.

    المؤلفون: Chen, Peixuan1,2, Etzelstorfer, Tanja1, Hackl, Florian1, Katcho, Nebil A.3,4, Chang, Hung‐Tai5, Nausner, Lukas1, Lee, Sheng‐Wei5, Fromherz, Thomas1, Stangl, Julian1, Schmidt, Oliver G.2, Mingo, Natalio3, Rastelli, Armando1

    المصدر: Physica Status Solidi. A: Applications & Materials Science. Mar2016, Vol. 213 Issue 3, p533-540. 8p.

    مصطلحات موضوعية: *GERMANIUM silicide films, *SUPERLATTICES, *THERMAL conductivity, *X-ray diffraction, *SECONDARY ion mass spectrometry, *TRANSMISSION electron microscopy


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  13. 13
    Academic Journal
    Thermoelectric properties of Ge/Si heterostructures: A combined theoretical and experimental study.

    المؤلفون: Fiedler, Gregor1, Nausner, Lukas2, Hu, Yang2, Chen, Peixuan2, Rastelli, Armando2, Kratzer, Peter1

    المصدر: Physica Status Solidi. A: Applications & Materials Science. Mar2016, Vol. 213 Issue 3, p524-532. 9p.

    مصطلحات موضوعية: *GERMANIUM silicide films, *HETEROSTRUCTURES, *THERMOELECTRIC materials, *SUPERLATTICES, *MOLECULAR beam epitaxy, *ELECTRICAL conductivity measurement


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  14. 14
    Academic Journal
    Structural evolution of Ge-rich Si1-xGex films deposited by jet-ICPCVD.

    المؤلفون: Yu Wang1, Meng Yang1, Gang Wang1, Xiaoxu Wei1,2, Junzhuan Wang1,2, Yun Li1,2, Youdou Zheng1,2, Yi Shi1,2, Zewen Zou3

    المصدر: AIP Advances. 2015, Vol. 5 Issue 11, p1-7. 7p.

    مصطلحات موضوعية: *GERMANIUM silicide films, *PLASMA-enhanced chemical vapor deposition, *INDUCTIVELY coupled plasma spectrometry

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  15. 15
    Academic Journal
    Facet engineering for SiGe/Si stressors in advanced CMOS technology.

    المؤلفون: Kasim, Johnson1 johnson.kasim@globalfoundries.com, Reichel, Carsten2, Dilliway, Gabriela2, Bai, Bo2, Zakowsky, Nadja2

    المصدر: Solid-State Electronics. Aug2015, Vol. 110, p19-22. 4p.

    مصطلحات موضوعية: *GERMANIUM silicide, *COMPLEMENTARY metal oxide semiconductors, *STRESS measurement (Mechanics), *NICKEL, *TEMPERATURE effect


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  16. 16
    Academic Journal
    Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer.

    المؤلفون: Baidakova, N. banatale@ipmras.ru, Bobrov, A.1, Drozdov, M., Novikov, A., Pavlov, D.1, Shaleev, M.2, Yunin, P., Yurasov, D., Krasilnik, Z.

    المصدر: Semiconductors. Aug2015, Vol. 49 Issue 8, p1104-1110. 7p.

    مصطلحات موضوعية: *GERMANIUM silicide, *HETEROSTRUCTURES, *SUBSTRATES (Materials science), *CRYSTAL structure, *ELECTRIC insulators & insulation, THERMAL properties of semiconductors


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  17. 17
    Academic Journal
    Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition.

    المؤلفون: Gallagher, J. D.1, Senaratne, C. L.2, Sims, P.2, Aoki, T.3, Menéndez, J.1, Kouvetakis, J.2

    المصدر: Applied Physics Letters. 4/23/2015, Vol. 106 Issue 9, p1-4. 4p. 1 Diagram, 4 Graphs.

    مصطلحات موضوعية: *GERMANIUM silicide, *HETEROSTRUCTURES, *ELECTROLUMINESCENCE, *PIN diodes, *DISLOCATIONS in crystals, *DARK currents (Electric)


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  18. 18
    Academic Journal
    Influence of absorber layer dopants on performance of Ge/Si single photon avalanche diodes.

    المؤلفون: Pilgrim, Neil J., Ikonic, Zoran, Kelsall, Robert W.

    المصدر: Journal of Applied Physics; Apr2013, Vol. 113 Issue 14, p144508, 8p, 1 Diagram, 9 Graphs

    مصطلحات موضوعية: DOPING agents (Chemistry), TRACE elements, DIODES, GERMANIUM silicide films, SEMICONDUCTOR doping


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  19. 19
    Academic Journal
    Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells.

    المؤلفون: Giorgioni, A., Gatti, E., Grilli, E., Chernikov, A., Chatterjee, S., Chrastina, D., Isella, G., Guzzi, M.

    المصدر: Journal of Applied Physics; Jan2012, Vol. 111 Issue 1, p013501, 4p, 6 Graphs

    مصطلحات موضوعية: PHOTOLUMINESCENCE, QUANTUM wells, GERMANIUM silicide, ELECTRON scattering, CONDUCTION bands, STARK effect, PHONONS


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  20. 20
    Academic Journal
    Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation.

    المؤلفون: Gunji, Marika, Marshall, Ann F., McIntyre, Paul C.

    المصدر: Journal of Applied Physics; Jan2011, Vol. 109 Issue 1, p014324, 6p, 4 Black and White Photographs, 4 Graphs

    مصطلحات موضوعية: SILICON compounds, GERMANIUM compounds, RELAXATION phenomena, TRANSMISSION electron microscopy, OXIDATION, GERMANIUM silicide films


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