المؤلفون: Alper Ülkü, Esin Uçar, Ramis Berkay Serin, Rifat Kaçar, Murat Artuç, Ebru Menşur, Ahmet Yavuz Oral

المصدر: Micromachines, Vol 15, Iss 6, p 726 (2024)

مصطلحات موضوعية: graded dielectric permittivity gate oxides, κ-graded stacked gate oxides, dielectric permittivity matching, grading profile, effective dielectric constant (κ EFF ), Penn Model, Mechanical engineering and machinery, TJ1-1570

Relation: https://www.mdpi.com/2072-666X/15/6/726; https://doaj.org/toc/2072-666X; https://doaj.org/article/c855f17afeff40a9a54eeec309c96c96

الاتاحة: https://doi.org/10.3390/mi15060726
https://doaj.org/article/c855f17afeff40a9a54eeec309c96c96

المؤلفون: Hallais, Geraldine, Renard, Charles, Barbier, Antoine, Imbernon, Éric, Fourches, Nicolas

المساهمون: Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nano-Magnétisme et Oxydes (LNO), Service de physique de l'état condensé (SPEC - UMR3680), Institut Rayonnement Matière de Saclay (DRF) (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (DRF) (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Département d'Electronique, des Détecteurs et d'Informatique pour la Physique (ex SEDI) (DEDIP), Institut de Recherches sur les lois Fondamentales de l'Univers (IRFU), Université Paris-Saclay-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

المصدر: ISSN: 0168-9002 ; EISSN: 1872-9576 ; Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

مصطلحات موضوعية: Pixel, Pixel detector, Particle physics, Quantum-well, Gate oxides, MOS transistors, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]

Relation: hal-03909178; https://hal.science/hal-03909178; https://hal.science/hal-03909178/document; https://hal.science/hal-03909178/file/1-s2.0-S0168900222011986-main.pdf; INSPIRE: 2616604

الاتاحة: https://hal.science/hal-03909178
https://hal.science/hal-03909178/document
https://hal.science/hal-03909178/file/1-s2.0-S0168900222011986-main.pdf
https://doi.org/10.1016/j.nima.2022.167906

المساهمون: Hubert, D

المصدر: Conference: International Conference on Defects inSemiconductors, Giessen, Germany, July 16-20, 2001

وصف الملف: Medium: ED

URL الوصول: http://www.osti.gov/scitech/servlets/purl/928217

المساهمون: Otano, W. [Univ. of Puerto Rico, Cayey, PR (United States)]

وصف الملف: Medium: ED; Size: 28 p.

URL الوصول: http://www.osti.gov/scitech/servlets/purl/1337470

المساهمون: O'Keefe, Michael

المصدر: Microscopy and Microanalysis; 8; 5; Other Information: Submitted to Microscopy and Microanalysis, Volume 8, No.5; Journal Publication Date: 10/2002; PBD: 17 Jul 2001

وصف الملف: Medium: ED; Size: 29 pages

URL الوصول: http://www.osti.gov/scitech/servlets/purl/835339

المؤلفون: Thomas Walther

المصدر: Nanomaterials; Volume 11; Issue 8; Pages: 2117

مصطلحات موضوعية: energy-dispersive X-ray spectroscopy (EDXS), scanning electron microscopy (SEM), penetration depth, oxide thickness, gate oxides

وصف الملف: application/pdf

Relation: Synthesis, Interfaces and Nanostructures; https://dx.doi.org/10.3390/nano11082117

الاتاحة: https://doi.org/10.3390/nano11082117

المؤلفون: Taylor, Seth T., Mardinly, John, O'Keefe, Michael A.

مصطلحات موضوعية: Materials science, HRTEM image simulations metrology gate oxides defect analysis

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/1t3141dr

المؤلفون: Kisielowski, C., Principe, E., Freitag, B., Hubert, D.

مصطلحات موضوعية: Condensed matter physics, superconductivity and superfluidity, Silicon gate oxides GaN HRTEM Z-contrast EELS

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/899418xt

المؤلفون: Feijoo, P.C., Pampillón Arce, María Ángela, San Andrés Serrano, Enrique, Fierro, J.L.G.

مصطلحات موضوعية: Particle fluxes, Gate oxides, Thin-films, Thermalization, Dielectrics, Integration, Transistors, Technology, Plasma, Si, Electricidad, Electrónica (Física), 2202.03 Electricidad

Time: 537

وصف الملف: application/pdf

Relation: TEC2010-18051; BES-2011-04379; http://dx.doi.org/10.1016/j.tsf.2015.07.045; http://www.sciencedirect.com/; https://hdl.handle.net/20.500.14352/24316

الاتاحة: https://hdl.handle.net/20.500.14352/24316
https://doi.org/10.1016/j.tsf.2015.07.045
http://www.sciencedirect.com/

المؤلفون: Kim, KS, Kim, JY, Kang, HB, Lee, BY, Park, SM

المساهمون: 화학과, 10200281, Park, SM

مصطلحات موضوعية: AIRBORNE MOLECULAR CONTAMINATION, ULTRATHIN GATE OXIDES, SILICON-WAFERS, THERMAL-OXIDATION, MASS-SPECTROMETRY, SURFACE, DEGRADATION, STRATEGIES, INTEGRITY, BEHAVIOR

Relation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY; 155; H426; H431; SCI급, SCOPUS 등재논문; SCI; Electrochemistry; Materials Science, Coatings & Films; Materials Science; 2015-OAK-0000007729; https://oasis.postech.ac.kr/handle/2014.oak/11168; 8442; JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.6, pp.H426 - H431; 000255524100063; 2-s2.0-43049116525

الاتاحة: https://oasis.postech.ac.kr/handle/2014.oak/11168
https://doi.org/10.1149/1.2904453

المؤلفون: Stoneham, AM, Gavartin, J, Shluger, AL, Kimmel, AV, Ramo, DM, Ronnow, HM, Aeppli, G, Renner, C

المصدر: In: JOURNAL OF PHYSICS-CONDENSED MATTER. (pp. pp. 1-22). IOP PUBLISHING LTD (2007)

مصطلحات موضوعية: ELECTRON-SPIN-RESONANCE, ALKALINE-EARTH FLUORIDES, HAFNIUM OXIDE, DIELECTRIC-PROPERTIES, SLOW-ELECTRONS, GATE OXIDES, AB-INITIO, VK CENTER, MODEL, HOLES

وصف الملف: application/pdf

Relation: https://discovery.ucl.ac.uk/id/eprint/112727/1/0953-8984_19_25_255208.pdf; https://discovery.ucl.ac.uk/id/eprint/112727/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/112727/1/0953-8984_19_25_255208.pdf
https://discovery.ucl.ac.uk/id/eprint/112727/

المؤلفون: Anna Regoutz, Thomas Aichinger, Gregor Pobegen

المساهمون: Imperial College London

مصطلحات موضوعية: Technology, GATE OXIDES, Materials science, Interface (computing), Materials Science, Oxide, Materials Science, Multidisciplinary, 02 engineering and technology, Dielectric, 01 natural sciences, Carbide, Physics, Applied, chemistry.chemical_compound, X-ray photoelectron spectroscopy, 0103 physical sciences, Materials Chemistry, 010302 applied physics, Science & Technology, business.industry, Physics, General Chemistry, 021001 nanoscience & nanotechnology, Engineering physics, Semiconductor, chemistry, Physical Sciences, 0210 nano-technology, business, Refractive index

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ea834b53abaf0be6d8a9fd706076597
http://hdl.handle.net/10044/1/65744

المؤلفون: Regoutz, A, Pobegen, G, Aichinger, T

المساهمون: Imperial College London

المصدر: 12085 ; 12079

مصطلحات موضوعية: Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, GATE OXIDES

Relation: Journal of Materials Chemistry C; http://hdl.handle.net/10044/1/65744; https://dx.doi.org/10.1039/c8tc02935k

الاتاحة: http://hdl.handle.net/10044/1/65744
https://doi.org/10.1039/c8tc02935k

المؤلفون: Ronald D. Schrimpf, Alessandro Paccagnella, Edoardo Lerario, Szymon Kulis, Daniel M. Fleetwood, Federico Faccio, Simone Gerardin, Stefano Bonaldo, Stefano Michelis, Giulio Borghello

مصطلحات موضوعية: lightly doped drain spacers, gamma-ray effects, ionisation, isolation technology, MOSFET, passivation, radiation hardening (electronics), semiconductor doping, X-ray effects, TID-induced damage, radiation response, complementary metal- oxide-semiconductor gate oxides, deep-sub-micrometer technologies, ionization mechanisms, ultrahigh total ionizing dose experiments, passivation oxides, linear bipolar technologies, enhanced low-dose rate sensitivity, CMOS technologies, radiation sources, shallow trench isolation oxide, electric field, ELDRS, X-rays, γ-rays, size 65 nm, Degradation, Sensitivity, Electric fields, Radiation effects, Deep-sub-micrometer metal–oxide–semiconductor (MOS), enhanced low-dose-rate sensitivity (ELDRS), total ionizing dose (TID) effects, 02 engineering and technology, 01 natural sciences, law.invention, law, Shallow trench isolation, Transistor, Deep-sub-micrometer metal-oxide-semiconductor (MOS), 021001 nanoscience & nanotechnology, CMOS, Absorbed dose, Optoelectronics, 0210 nano-technology, Nuclear and High Energy Physics, Materials science, Passivation, Radiation, 0103 physical sciences, Electrical and Electronic Engineering, 010308 nuclear & particles physics, business.industry, Doping, Nuclear Energy and Engineering, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65cb68d9de3c1d1374cb70fbdd2807d9
http://hdl.handle.net/11390/1139283

المؤلفون: Prendergast, James, O'Driscoll, Eoin, Mullen, Ed

المصدر: The ITB Journal

مصطلحات موضوعية: integrated circuit, gate oxides, Electrical and Computer Engineering, manag, envir

Relation: https://arrow.tudublin.ie/itbj/vol5/iss1/19

الاتاحة: https://arrow.tudublin.ie/itbj/vol5/iss1/19

المؤلفون: Luca Vandelli, Luca Larcher, Andrea Padovani

المصدر: Journal of Computational Electronics. 12:658-665

مصطلحات موضوعية: Materials science, Dielectric strength, dielectric reliability, Time-dependent gate oxide breakdown, modeling and simulation, Leakage current, Gate oxides, Dielectric breakdown, Non-volatile memory, Dissipation, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Computational physics, Threshold voltage, Modeling and simulation, Modeling and Simulation, Vacancy defect, SILC, Electrical and Electronic Engineering, High-κ dielectric

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5084e9d7372a1795c52d1315aaadaeb0
https://doi.org/10.1007/s10825-013-0526-z

المؤلفون: A. Schäfer, S. Mantl, Wolfgang Skorupa, Jürgen Schubert, René Hübner, Jan Lehmann, Johannes von Borany, Thomas Mikolajick

المصدر: 18th Conference of "Insulating Films on Semiconductors", 25.-28.06.2013, Kraków, Polen
Microelectronic Engineering 109(2013), 381-384

مصطلحات موضوعية: Materials science, Annealing (metallurgy), Oxide, chemistry.chemical_element, Dielectric, law.invention, chemistry.chemical_compound, law, Ternary high-k oxides, Electrical and Electronic Engineering, Metal gate, High-κ dielectric, Flash-lamp, business.industry, Higher-k gate dielectrics, Rare-earth based gate oxides, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Capacitor, chemistry, Electrical properties, Optoelectronics, business, Tin, High-k gate dielectrics

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71aa438c7cb089a92a409c524cdc3dd2
https://doi.org/10.1016/j.mee.2013.04.021

المؤلفون: GHOSH, K, DAS, S, FISSEL, A, OSTEN, HJ, LAHA, A

مصطلحات موضوعية: High-K Application, Electrical Characteristics, Gate Oxides, Silicon, Breakdown, Gd2o3, Si, Epitaxial Oxide, High-K Dielectric, Molecular Beam Epitaxy (Mbe), Reliability

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES,63(7)2852-2857; http://dx.doi.org/10.1109/TED.2016.2566681

الاتاحة: https://doi.org/10.1109/TED.2016.2566681

المؤلفون: H. Jörg Osten, Andreas Fissel, Kankat Ghosh, Sudipta Das, Apurba Laha

المصدر: IndraStra Global.

مصطلحات موضوعية: Silicon, Materials science, Analytical chemistry, chemistry.chemical_element, Molecular Beam Epitaxy (Mbe), Nanotechnology, 02 engineering and technology, Epitaxy, 01 natural sciences, Capacitance, Gate Oxides, X-ray photoelectron spectroscopy, Breakdown, Gd2o3, 0103 physical sciences, High-K Dielectric, Electrical and Electronic Engineering, Thin film, 010302 applied physics, Epitaxial Oxide, Dielectric strength, Order (ring theory), 021001 nanoscience & nanotechnology, Reliability, Electronic, Optical and Magnetic Materials, chemistry, High-K Application, Si, 0210 nano-technology, Molecular beam epitaxy, Electrical Characteristics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::084f6c691121d80dfbc00ac75bde4b28
https://igi.indrastra.com/items/show/47811

المؤلفون: Kaczer, B., De Keersgieter, A., Mahmood, Salman, Degraeve, R., Groeseneken, G.

المصدر: Annu Proc Reliab Phys Symp Annual Proceedings - Reliability Physics (Symposium). :79-83

مصطلحات موضوعية: CMOS integrated circuits, Computer simulation, Electric resistance, Extrapolation, Leakage currents, Parameter estimation, Threshold voltage, Transconductance, Circuit simulations, Gate-oxides, Oxide wear-out, Voltage stress, MOSFET devices

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-157429