المؤلفون: Katarzyna Lament, Miłosz Grodzicki, Radosław Wasielewski, Piotr Mazur, Antoni Ciszewski

المصدر: Crystals, Vol 14, Iss 3, p 201 (2024)

مصطلحات موضوعية: thin films, organic layers, PTCDI-C8, semiconductors, GaN(0001), Crystallography, QD901-999

Relation: https://www.mdpi.com/2073-4352/14/3/201; https://doaj.org/toc/2073-4352; https://doaj.org/article/c3264eaf90a7480baf6ba256467127fc

الاتاحة: https://doi.org/10.3390/cryst14030201
https://doaj.org/article/c3264eaf90a7480baf6ba256467127fc

المؤلفون: Miłosz Grodzicki

المصدر: Coatings; Volume 11; Issue 2; Pages: 145

مصطلحات موضوعية: GaN(0001), thin films, manganese (Mn), nickel (Ni), palladium (Pd), arsenic (As), antimony (Sb), alloying, photoelectron spectroscopy

وصف الملف: application/pdf

Relation: Selected Papers from International Conferences and Workshops; https://dx.doi.org/10.3390/coatings11020145

الاتاحة: https://doi.org/10.3390/coatings11020145

المؤلفون: Miłosz Grodzicki

المصدر: Materials Proceedings; Volume 2; Issue 1; Pages: 30

مصطلحات موضوعية: GaN(0001), thin films, manganese (Mn), nickel (Ni), arsenic (As), antimony (Sb), alloying, photoelectron spectroscopy

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/CIWC2020-06833

الاتاحة: https://doi.org/10.3390/CIWC2020-06833

المؤلفون: Li, Jun, Wang, Qingxiao, He, Guowei, Widom, Michael, Nemec, Lydia, Blum, Volker, Kim, Moon, Rinke, Patrick, Feenstra, Randall M.

المساهمون: Carnegie Mellon University, University of Texas at Dallas, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Duke University, Computational Electronic Structure Theory, Department of Applied Physics, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: SURFACE RECONSTRUCTIONS, EPITAXIAL GRAPHENE, MOLECULAR-DYNAMICS, GAN(0001)

وصف الملف: application/pdf

Relation: Physical Review Materials; Volume 3, issue 8; Li , J , Wang , Q , He , G , Widom , M , Nemec , L , Blum , V , Kim , M , Rinke , P & Feenstra , R M 2019 , ' Formation of graphene atop a Si adlayer on the C-face of SiC ' , Physical Review Materials , vol. 3 , no. 8 , 084006 , pp. 1-12 . https://doi.org/10.1103/PhysRevMaterials.3.084006; PURE UUID: b36ec352-921b-4ab9-a48a-09c2df7aaf13; PURE ITEMURL: https://research.aalto.fi/en/publications/b36ec352-921b-4ab9-a48a-09c2df7aaf13; PURE FILEURL: https://research.aalto.fi/files/36632134/PhysRevMaterials.3.084006.pdf; https://aaltodoc.aalto.fi/handle/123456789/40337; URN:NBN:fi:aalto-201909205363

الاتاحة: https://aaltodoc.aalto.fi/handle/123456789/40337
https://doi.org/10.1103/PhysRevMaterials.3.084006

المؤلفون: Bui Van Pho, Kazuto Yamauchi, Kouji Inagaki, Miki Hasegawa, Pho Bui Van, Yoshitada Morikawa, 山内 和人, 森川 良忠, 稲垣 耕司, 長谷川 未貴

المصدر: Proceedings of JSPE Semestrial Meeting. 2018, :455

المؤلفون: Pers, Justyna, Grodzicki, Miłosz, Ciszewski, Antoni

المصدر: Copernican Letters; Vol. 7 (2016); 1-5 ; Copernican Letters; Tom 7 (2016); 1-5 ; 2082-968X

مصطلحات موضوعية: Ni-Ga intermetallic compounds, GaN(0001), Grains, STM

وصف الملف: application/pdf

Relation: https://apcz.umk.pl/CL/article/view/CL.2016.001/10425; https://apcz.umk.pl/CL/article/view/CL.2016.001

الاتاحة: https://apcz.umk.pl/CL/article/view/CL.2016.001

المؤلفون: M. Grodzicki

المصدر: Coatings, Vol 11, Iss 145, p 145 (2021)

مصطلحات موضوعية: Materials science, manganese (Mn), chemistry.chemical_element, GaN(0001), Gallium nitride, Surfaces and Interfaces, Substrate (electronics), palladium (Pd), Surfaces, Coatings and Films, chemistry.chemical_compound, chemistry, Chemical engineering, X-ray photoelectron spectroscopy, thin films, lcsh:TA1-2040, Physical vapor deposition, nickel (Ni), Materials Chemistry, Gallium, Thin film, lcsh:Engineering (General). Civil engineering (General), Layer (electronics), Wurtzite crystal structure, arsenic (As)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::665502867f0a9c3b6797530a640a3782
https://www.mdpi.com/2079-6412/11/2/145

المؤلفون: Nieto,J. Alberto, Alejandro Rasero,D., Ortega López,C.

المصدر: Revista mexicana de física v.58 n.6 2012

مصطلحات موضوعية: DFT, método pseudopotencial-ondas planas, adsorción, superficie GaN(0001)

وصف الملف: text/html

الاتاحة: http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2012000600002

المؤلفون: Michael Widom, Volker Blum, Moon Ki Kim, Lydia Nemec, Jun Li, Patrick Rinke, Guowei He, Qingxiao Wang, Randall M. Feenstra

المساهمون: Carnegie Mellon University, University of Texas at Dallas, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Duke University, Computational Electronic Structure Theory, Department of Applied Physics, Aalto-yliopisto, Aalto University

المصدر: Physical Review Materials

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Ab initio, FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, SURFACE RECONSTRUCTIONS, law.invention, Molecular dynamics, chemistry.chemical_compound, law, GAN(0001), Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Scanning transmission electron microscopy, Monolayer, General Materials Science, 010306 general physics, EPITAXIAL GRAPHENE, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Graphene, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Crystallography, chemistry, MOLECULAR-DYNAMICS, Disilane, Epitaxial graphene, 0210 nano-technology, Layer (electronics)

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f7ecd19bb59baf4335c7d89a45ea925
https://doi.org/10.1103/physrevmaterials.3.084006

المؤلفون: Zheng LX, Xie MH, Xu SJ, Cheung SH, Tong SY, Xie MH,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.

مصطلحات موضوعية: Surface Processes, Molecular Beam Epitaxy, Nitrides, Semiconducting Gallium Compounds, Gan(0001) Surfaces, Reconstructions, 半导体材料, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour

Relation: JOURNAL OF CRYSTAL GROWTH; Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY .Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2001 ,227(0 ):376-380; http://ir.semi.ac.cn/handle/172111/12168

الاتاحة: http://ir.semi.ac.cn/handle/172111/12168

المؤلفون: Zheng LX, Xie MH, Seutter SM, Cheung SH, Tong SY, Zheng LX,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.

مصطلحات موضوعية: Gan(0001), Films, 半导体物理, photography--films, finite volume method, photographic film, motion pictures, movies, cinema, feature films--history and criticism, moving-pictures, microfilms, filmstrips, film slides, film strips, slidefilms, anodised layers, anodized layers, claddings, cvd coatings, chemical vapor deposited coatings, chemical vapour deposited coatings, cvd thin films, decorative coatings, electrophoretic coatings, fission reactor fuel claddings, foils, mocvd coatings, optical fibre cladding, optical fiber cladding

Relation: PHYSICAL REVIEW LETTERS; Zheng LX; Xie MH; Seutter SM; Cheung SH; Tong SY .Observation of "ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy ,PHYSICAL REVIEW LETTERS,2000,85(11):2352-2355; http://ir.semi.ac.cn/handle/172111/12458

الاتاحة: http://ir.semi.ac.cn/handle/172111/12458

المؤلفون: Espitia Rico, Miguel José

المساهمون: Rodríguez Martínez, Jairo Arbey

المصدر: Repositorio UN
Universidad Nacional de Colombia
instacron:Universidad Nacional de Colombia

مصطلحات موضوعية: 54 Química y ciencias afines / Chemistry, Structural properties, Propiedades electrónicas, Difusión, DFT, Diffusion, 62 Ingeniería y operaciones afines / Engineering, Propiedades estructurales, Electronic properties, Grafeno, 53 Física / Physics, GaN(0001) Surface, Superficie GaN(0001), Adsorption, Graphene, Dirac cones, Conos de Dirac, Adsorción

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::30a2c2ee07f33877d36abc346752d731
https://repositorio.unal.edu.co/handle/unal/58816

المؤلفون: R.K. Singh, C.S. Pathak, V. Ramgopal Rao, Tejas R. Naik, Manjari Garg, S. Nagarajan

المساهمون: Indian Institute of Technology Delhi, Indian Institute of Technology Bombay, Department of Electronics and Nanoengineering, Aalto-yliopisto, Aalto University

المصدر: IndraStra Global.

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Schottky barrier, Gallium nitride, 02 engineering and technology, Epitaxy, 01 natural sciences, symbols.namesake, chemistry.chemical_compound, 0103 physical sciences, GAN(0001), COPPER DIFFUSION BARRIER, TEMPERATURE, Surface states, 010302 applied physics, Kelvin probe force microscope, ta114, business.industry, Fermi level, Wide-bandgap semiconductor, MONOLAYERS, 021001 nanoscience & nanotechnology, CMOS TECHNOLOGIES, GAN, Semiconductor, chemistry, symbols, Optoelectronics, GROWTH, 0210 nano-technology, business

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d892ab35dc2e60807e441972d54823e7
http://dspace.library.iitb.ac.in/xmlui/handle/100/23587

المؤلفون: Agnarsson, Björn, Qi, B., Szamota-Leandersson, Karolina, Olafsson, S., Göthelid, Mats

المصدر: Thin Solid Films. 517(21):6023-6026

مصطلحات موضوعية: Gallium nitride, Surfactant, Cleaning, Indium, Argon sputtering, Surface defects, Photoemission spectroscopy, stoichiometric gan(0001)-1 x-1, core-level photoemission, molecular-beam epitaxy, electron accumulation, ion-bombardment, n-type, deposition, nitride

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-18636

المؤلفون: Yoshikawa, Akihiko, Wang, Xinqiang, Ishitani, Yoshihiro, Uedono, Akira

المساهمون: Yoshikawa, A (reprint author), Chiba Univ, Grad Sch Elect & Elect Engn, Inage Ku, 1-33 Yayoi Cho, Chiba 2638522, Japan., Chiba Univ, Grad Sch Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan., Chiba Univ, Venture Business Lab, Inage Ku, Chiba 2638522, Japan., Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China., Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan., Chiba Univ, Grad Sch Elect & Elect Engn, Inage Ku, 1-33 Yayoi Cho, Chiba 2638522, Japan.

المصدر: SCI ; EI

مصطلحات موضوعية: InN films, MBE, p-type doping, electrical properties, PROJECTOR AUGMENTED-WAVE, FUNDAMENTAL-BAND GAP, HEXAGONAL INN, GROWTH, GAN(0001), INVERSION, EMISSION, SPECTRA, ALLOYS

Relation: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2010/5/1,207(1011-1023).; 930340; http://hdl.handle.net/20.500.11897/244596; WOS:000278610700002

الاتاحة: https://hdl.handle.net/20.500.11897/244596
https://doi.org/10.1002/pssa.200983118

المؤلفون: Zhang, Hui-Min, Sun, Yi, Li, Wei, Peng, Jun-Ping, Song, Canli, Xing, Ying, Zhang, Qinghua, Guan, Jia-Qi, Li, Zhi, Zhao, Yanfei, Ji, Shuaihua, Wang, Lili, He, Ke, Chen, Xi, Gu, Lin, Ling, Langsheng, Tian, Mingliang, Li, Lian, Xie, X. C, Liu, Jianping, Yang, Hui, Xue, Qi-Kun, Wang, Jian, Ma, Xu-Cun

المصدر: Australian Institute for Innovative Materials - Papers

مصطلحات موضوعية: layer, two-atom, phase, detection, semiconducting, grown, gan(0001), film, superconducting, ga, hexagonal, Engineering, Physical Sciences and Mathematics

وصف الملف: application/pdf

Relation: https://ro.uow.edu.au/aiimpapers/2582; https://ro.uow.edu.au/context/aiimpapers/article/3627/viewcontent/downloadAttachmentForRo.pdf

الاتاحة: https://ro.uow.edu.au/aiimpapers/2582
https://doi.org/10.1103/PhysRevLett.114.107003
https://ro.uow.edu.au/context/aiimpapers/article/3627/viewcontent/downloadAttachmentForRo.pdf

المؤلفون: Sezen, H., Ozbay, E., Aktas, O., Suzer, S.

المصدر: Applied Physics Letters

مصطلحات موضوعية: Recombination, Interfaces, Gan(0001)

وصف الملف: application/pdf

Relation: http://dx.doi.org/10.1063/1.3564892; Sezen, H., Ozbay, E., Aktas, O., & Suzer, S. (2011). Transient surface photovoltage in n-and p-GaN as probed by x-ray photoelectron spectroscopy. Applied Physics Letters, 98(11), 111901.; http://hdl.handle.net/11693/13358

الاتاحة: http://hdl.handle.net/11693/13358
https://doi.org/10.1063/1.3564892

المؤلفون: Smith, KE, Duda, LC, Stagarescu, CB, Downes, J, Korakakis, D, Singh, R, Moustakas, TD, Guo, JH, Nordgren, J

المصدر: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 16(4):2250-2253

مصطلحات موضوعية: PHOTOEMISSION SPECTROSCOPY, WURTZITE GAN, FILMS, ALXGA1-XN, GROWTH, GAN(0001)-(1X1)

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-70744

المؤلفون: Yu.N. Makarov, Roman Talalaev, S. Yu. Karpov, Benjamin Damilano, Nicolas Grandjean, Jean Massies

المصدر: physica status solidi (a). 176:333-336

مصطلحات موضوعية: Reactive nitrogen, Inorganic chemistry, Kinetics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atmosphere, Crystal, Ammonia, chemistry.chemical_compound, Adsorption, chemistry, MOLECULAR-BEAM EPITAXY, NH3, GAN(0001), Growth rate, Molecular beam epitaxy

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8ce34953eaf9f53a3d1ffdcc59b2d9b
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<333::aid-pssa333>3.0.co;2-y

المؤلفون: Kerr, A. J., Chagarov, E., Gu, S., Kaufman-Osborn, T., Madisetti, S., Wu, J., Asbeck, P. M., Oktyabrsky, S., Kummel, A. C.

مصطلحات موضوعية: GaN(0001), XPS modeling, DFTMD modeling, nucleation, gate oxide atomic layer deposition, wet sulfur treatment, gate oxide deposition, gallium surface atoms, oxide interfacial atoms, tetrahedral bonding

وصف الملف: application/pdf

Relation: Kerr, A. J., Chagarov, E., Gu, S., Kaufman-Osborn, T., Madisetti, S., Wu, J., . . . Kummel, A. C. (2014). Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide. Journal of Chemical Physics, 141, 104702. doi:10.1063/1.4894541; http://hdl.handle.net/1951/68925

الاتاحة: http://hdl.handle.net/1951/68925