يعرض 1 - 20 نتائج من 59,516 نتيجة بحث عن '"GALLIUM nitride"', وقت الاستعلام: 0.65s تنقيح النتائج
  1. 1
    Academic Journal
    Demonstration of grain reorientation during GaN early stage coalescence grown by novel pendeo-epitaxy approach.

    المؤلفون: Wehbe, Maya1,2 (AUTHOR) maya.wehbe@cea.fr, Charles, Matthew1 (AUTHOR), Pino Muñoz, Daniel2 (AUTHOR), Baril, Kilian3 (AUTHOR), Labchir, Nabil4 (AUTHOR), Labau, Sebastien4 (AUTHOR), Gourgon, Cecile4 (AUTHOR), Alloing, Blandine3 (AUTHOR), Coulon, Pierre-Marie3 (AUTHOR), Zuniga-Perez, Jesús3,5 (AUTHOR), Zatterin, Edoardo6 (AUTHOR), Gergaud, Patrice1 (AUTHOR)

    المصدر: Journal of Applied Physics. 12/14/2024, Vol. 136 Issue 22, p1-11. 11p.

    مصطلحات موضوعية: *GALLIUM nitride, *X-ray microscopy, *ELECTRON diffraction, *GRAIN farming, *CATHODOLUMINESCENCE


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  2. 2
    Academic Journal
    High breakdown voltages on pseudo-vertical p–n diodes by selective area growth of GaN on silicon.

    المؤلفون: Kaltsounis, Thomas1,2 (AUTHOR), El Amrani, Mohammed1 (AUTHOR), Plaza Arguello, David1 (AUTHOR), El Rammouz, Hala1 (AUTHOR), Lafossas, Matthieu1 (AUTHOR), Torrengo, Simona1 (AUTHOR), Mendizabal, Laurent1 (AUTHOR), Gueugnot, Alain1 (AUTHOR), Mariolle, Denis1 (AUTHOR), Jalabert, Thomas1 (AUTHOR), Buckley, Julien1 (AUTHOR), Cordier, Yvon2 (AUTHOR), Charles, Matthew1 (AUTHOR) matthew.charles@cea.fr

    المصدر: Journal of Applied Physics. 11/7/2024, Vol. 136 Issue 17, p1-9. 9p.

    مصطلحات موضوعية: *METAL organic chemical vapor deposition, *GALLIUM nitride, *BREAKDOWN voltage, *HIGH voltages, *DOPING agents (Chemistry)


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  3. 3
    Academic Journal
    Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics.

    المؤلفون: Lex, A.1,2,3,4 (AUTHOR) andreas.lex@ams-osram.com, Avramescu, A.1 (AUTHOR), Vögl, F.1,4 (AUTHOR), Brandl, M.1 (AUTHOR), Binder, M.1 (AUTHOR), Hetzl, M.1 (AUTHOR), Spende, H.2,3,4 (AUTHOR), Wolter, S.2,3,4 (AUTHOR), Waag, A.2,3,4 (AUTHOR), von Malm, N.1 (AUTHOR)

    المصدر: Journal of Applied Physics. 7/14/2024, Vol. 136 Issue 2, p1-9. 9p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *SURFACE passivation, *QUANTUM efficiency, *SURFACE recombination, *SURFACE defects


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  4. 4
    Academic Journal
    Linearly polarized GaN micro-LED with adjustable directional emission integrated with a continuous metasurface.

    المؤلفون: Zhang, Hanbin1 (AUTHOR), Wang, Hancheng1 (AUTHOR), Du, Jian1 (AUTHOR), Chen, Wenhao1 (AUTHOR), Wang, Jin1 (AUTHOR), Xue, Junjun1 (AUTHOR), Zhi, Ting1 (AUTHOR) zhit@njupt.edu.cn

    المصدر: Journal of Applied Physics. 7/14/2024, Vol. 136 Issue 2, p1-11. 11p.

    مصطلحات موضوعية: *THREE-dimensional display systems, *GALLIUM nitride, *EMISSION control, *THREE-dimensional imaging, *CATHODOLUMINESCENCE


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  5. 5
    Academic Journal
    High-voltage AlGaN/GaN heterojunction lateral photoconductive semiconductor switch based on semi-insulating 4H-SiC substrate.

    المؤلفون: Li, Yangfan1 (AUTHOR), Xiao, Longfei1 (AUTHOR) xiaolongfeixlf@163.com, Luan, Chongbiao2 (AUTHOR) luanchongbiao@163.com, Qin, Yan2 (AUTHOR), Sun, Xun1 (AUTHOR), Sha, Huiru1 (AUTHOR), Jiao, Jian1 (AUTHOR), Chen, Xiufang1 (AUTHOR), Li, Hongtao2 (AUTHOR), Xu, Xiangang1 (AUTHOR)

    المصدر: Journal of Applied Physics. 6/21/2024, Vol. 135 Issue 23, p1-8. 8p.

    مصطلحات موضوعية: *TWO-dimensional electron gas, *GALLIUM nitride, *SEMICONDUCTOR switches, *HETEROJUNCTIONS, *CURRENT distribution, *ELECTRIC fields


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  6. 6
    Academic Journal
    Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers.

    المؤلفون: Chichibu, Shigefusa F.1 (AUTHOR) chichibulab@yahoo.co.jp, Shima, Kohei1 (AUTHOR), Uedono, Akira2 (AUTHOR), Ishibashi, Shoji3 (AUTHOR), Iguchi, Hiroko4 (AUTHOR), Narita, Tetsuo4 (AUTHOR), Kataoka, Keita4 (AUTHOR), Tanaka, Ryo5 (AUTHOR), Takashima, Shinya5 (AUTHOR), Ueno, Katsunori5 (AUTHOR), Edo, Masaharu5 (AUTHOR), Watanabe, Hirotaka6 (AUTHOR), Tanaka, Atsushi6 (AUTHOR), Honda, Yoshio6 (AUTHOR), Suda, Jun6 (AUTHOR), Amano, Hiroshi6 (AUTHOR), Kachi, Tetsu6 (AUTHOR), Nabatame, Toshihide7 (AUTHOR), Irokawa, Yoshihiro7 (AUTHOR), Koide, Yasuo7 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/14/2024, Vol. 135 Issue 18, p1-20. 20p.

    مصطلحات موضوعية: *EPITAXIAL layers, *GALLIUM nitride, *PHOTOLUMINESCENCE, *POSITRON annihilation, *OPTOELECTRONIC devices, *MERCURY vapor, *INDIUM gallium nitride


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  7. 7
    Academic Journal
    Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping.

    المؤلفون: Xu, Zhiyu1 (AUTHOR) zhiyux@gatech.edu, Daeumer, Matthias A.2 (AUTHOR), Cho, Minkyu1 (AUTHOR), Yoo, Jae-Hyuck2 (AUTHOR), Detchprohm, Theeradetch1 (AUTHOR), Bakhtiary-Noodeh, Marzieh3 (AUTHOR), Shao, Qinghui2 (AUTHOR), Laurence, Ted A.2 (AUTHOR), Key, Daryl4 (AUTHOR), Letts, Edward4 (AUTHOR), Hashimoto, Tadao4 (AUTHOR), Dupuis, Russell D.1 (AUTHOR), Shen, Shyh-Chiang1 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/28/2024, Vol. 135 Issue 20, p1-8. 8p.

    مصطلحات موضوعية: *GALLIUM nitride, *PIN diodes, *PERSONAL identification numbers, *PHOTOLUMINESCENCE, *LUMINESCENCE


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  8. 8
    Academic Journal
    Field emission characteristics of AlGaN/GaN nanoscale lateral vacuum diodes.

    المؤلفون: Hernandez, Nathaniel1,2 (AUTHOR), Cahay, Marc1,2 (AUTHOR) cahaymm@ucmail.uc.edu, O'Mara, Jonathan3,4 (AUTHOR), Ludwick, Jonathan2,5 (AUTHOR), Walker Jr., Dennis E.3 (AUTHOR), Back, Tyson5 (AUTHOR), Hall, Harris3 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/28/2024, Vol. 135 Issue 20, p1-8. 8p.

    مصطلحات موضوعية: *FIELD emission, *GALLIUM nitride, *TWO-dimensional electron gas, *DIODES, *RECTIFICATION (Electricity)


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  9. 9
    Academic Journal
    Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals.

    المؤلفون: Dub, M.1,2 (AUTHOR) mdub@unipress.waw.pl, Sai, P.1 (AUTHOR), Ivonyak, Y.1 (AUTHOR), But, D. B.1 (AUTHOR), Kacperski, J.1 (AUTHOR), Prystawko, P.1 (AUTHOR), Kucharski, R.1 (AUTHOR), Słowikowski, M.2 (AUTHOR), Cywiński, G.1 (AUTHOR), Knap, W.1,2 (AUTHOR), Rumyantsev, S.1 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/21/2024, Vol. 135 Issue 19, p1-9. 9p.

    مصطلحات موضوعية: *PLASMONICS, *GALLIUM nitride, *CRYSTALS, *PLASMA oscillations, *FREQUENCY tuning


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  10. 10
    Academic Journal
    Theoretical study of the influence of GaOx interfacial layer on the GaN/SiO2 interface property.

    المؤلفون: Hattori, Shuto1 (AUTHOR) hattori.shuto.f2@s.mail.nagoya-u.ac.jp, Oshiyama, Atsushi2 (AUTHOR), Shiraishi, Kenji1,2 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/7/2024, Vol. 135 Issue 17, p1-7. 7p.

    مصطلحات موضوعية: *ATOMIC structure, *GALLIUM nitride, *VALENCE bands


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  11. 11
    Academic Journal
    Effect of phase transition on the piezoelectric properties of scandium-alloyed gallium nitride.

    المؤلفون: Hirata, Kenji1 (AUTHOR) kenji.hirata@aist.go.jp, Ikemoto, Yu2 (AUTHOR), Uehara, Masato1,2 (AUTHOR), Yamada, Hiroshi1,2 (AUTHOR), Anggraini, Sri Ayu1 (AUTHOR), Akiyama, Morito1 (AUTHOR)

    المصدر: Journal of Applied Physics. 4/28/2024, Vol. 135 Issue 16, p1-10. 10p.

    مصطلحات موضوعية: *GALLIUM nitride, *PHASE transitions, *MICROELECTROMECHANICAL systems, *ELASTIC constants, *BORON nitride


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  12. 12
    Academic Journal
    Photoluminescence from CdGa and HgGa acceptors in GaN.

    المؤلفون: Reshchikov, M. A.1 (AUTHOR) mreshchi@vcu.edu, Andrieiev, O.1 (AUTHOR), Vorobiov, M.1 (AUTHOR), Demchenko, D. O.1 (AUTHOR), McEwen, B.2 (AUTHOR), Shahedipour-Sandvik, F.2 (AUTHOR)

    المصدر: Journal of Applied Physics. 4/21/2024, Vol. 135 Issue 15, p1-10. 10p.

    مصطلحات موضوعية: *GALLIUM nitride, *PHOTOLUMINESCENCE, *IONIZATION energy


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  13. 13
    Academic Journal
    Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures.

    المؤلفون: Yassine, M.1 (AUTHOR) mohamed.yassine@inatech.uni-freiburg.de, Yassine, A.1 (AUTHOR), Nair, A.2 (AUTHOR), Sundarapandian, B.2 (AUTHOR), Afshar, N.1 (AUTHOR), Kirste, L.2 (AUTHOR), Fichtner, S.3,4 (AUTHOR), Ambacher, O.1 (AUTHOR)

    المصدر: Journal of Applied Physics. 4/21/2024, Vol. 135 Issue 15, p1-13. 13p.

    مصطلحات موضوعية: *HETEROSTRUCTURES, *GALLIUM nitride, *POWER electronics, *CRYSTAL lattices, *WURTZITE, *BORON nitride, *ZINC oxide films, *SPHALERITE


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  14. 14
    Academic Journal
    Nitrogen vacancy–acceptor complexes in gallium nitride.

    المؤلفون: Vorobiov, Mykhailo1 (AUTHOR) vorobiovm@vcu.edu, Demchenko, Denis O.1 (AUTHOR), Andrieiev, Oleksandr1 (AUTHOR), Reshchikov, Michael A.1 (AUTHOR)

    المصدر: Journal of Applied Physics. 4/21/2024, Vol. 135 Issue 15, p1-12. 12p.

    مصطلحات موضوعية: *GALLIUM nitride, *CONDUCTION bands, *VALENCE bands, *EXCITED states, *NITROGEN, *MAGNESIUM, *BERYLLIUM


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  15. 15
    Academic Journal
    Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN.

    المؤلفون: Gong, Jiarui1,2 (AUTHOR), Su, Xin2 (AUTHOR), Qiu, Shuoyang2 (AUTHOR), Zhou, Jie2 (AUTHOR), Liu, Yang2 (AUTHOR), Li, Yiran2 (AUTHOR), Kim, Donghyeok2 (AUTHOR), Tsai, Tsung-Han2 (AUTHOR), Ng, Tien Khee3 (AUTHOR), Ooi, Boon S.3 (AUTHOR) boon.ooi@kaust.edu.sa, Ma, Zhenqiang2 (AUTHOR) mazq@engr.wisc.edu

    المصدر: Journal of Applied Physics. 3/21/2024, Vol. 135 Issue 11, p1-8. 8p.

    مصطلحات موضوعية: *GALLIUM nitride, *SURFACE cleaning, *P-type semiconductors, *ACTIVATION energy, *CHARGE carriers


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  16. 16
    Academic Journal
    Two-carrier model-fitting of Hall effect in semiconductors with dual-band occupation: A case study in GaN two-dimensional hole gas.

    المؤلفون: Dill, Joseph E., Chang, Chuan F. C., Jena, Debdeep, Xing, Huili Grace

    المصدر: Journal of Applied Physics; 1/14/2025, Vol. 137 Issue 2, p1-10, 10p

    مصطلحات موضوعية: HALL effect, CHARGE carriers, GALLIUM nitride, GENERATIVE adversarial networks, SEMICONDUCTORS, CARRIER density


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  17. 17
    Academic Journal
    Electrical and structural analysis of GaN/ZnO/Ga2O3 bonded interfaces; observation of spinel ZnGa2O4 after annealing.

    المؤلفون: Kosanovic, Stefan, Sun, Kai, Jian, Ashley, Zhai, Xin, Mishra, Umesh, Ahmadi, Elaheh

    المصدر: Journal of Applied Physics; 12/21/2024, Vol. 136 Issue 23, p1-9, 9p

    مصطلحات موضوعية: SEMICONDUCTOR wafer bonding, OHMIC resistance, CRYSTAL orientation, SUBSTRATES (Materials science), GALLIUM nitride


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  18. 18
    Academic Journal
    Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type.

    المؤلفون: Litschgi, Simon1 (AUTHOR) simon.litschgi@cea.fr, Dussaigne, Amélie1 (AUTHOR), Barbier, Frédéric1 (AUTHOR), Veux, Guillaume1 (AUTHOR), Cibié, Anthony1 (AUTHOR), Gayral, Bruno2 (AUTHOR), Rol, Fabian1 (AUTHOR) fabian.rol@cea.fr

    المصدر: Applied Physics Letters. 1/6/2025, Vol. 126 Issue 1, p1-6. 6p.

    مصطلحات موضوعية: *CHARGE carrier lifetime, *INDIUM gallium nitride, *STARK effect, *SUBSTRATES (Materials science), *GALLIUM nitride


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  19. 19
    Academic Journal
    Short range optical communication with GaN‐on‐Si microLED and microPD matrices.

    المؤلفون: Le Maitre, Patrick1 (AUTHOR) patrick.lemaitre@cea.fr, Cibié, Anthony1 (AUTHOR), Rol, Fabian1 (AUTHOR), Jacob, Stéphanie1 (AUTHOR), Michit, Nicolas1 (AUTHOR), El Badaoui, Sultan1 (AUTHOR), Simon, Julia1 (AUTHOR), Miralles, Bastien1 (AUTHOR), Ballot, Clément1 (AUTHOR), Aventurier, Bernard1 (AUTHOR), De Martino, Paolo1 (AUTHOR)

    المصدر: Journal of the Society for Information Display. Dec2024, Vol. 32 Issue 12, p797-814. 18p.

    مصطلحات موضوعية: *OPTICAL communications, *INDIUM gallium nitride, *VISIBLE spectra, *GALLIUM nitride, *LIGHTING, *DATA transmission systems


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  20. 20
    Dynamic Thermal Coupling in GaN MMIC Power Amplifiers

    المؤلفون: Kristensen, Tobias, 1998, Nilsson, Torbjörn M.J., Divinyi, Andreas, Bremer, Johan, 1991, Thorsell, Mattias, 1982

    المصدر: IEEE Transactions on Microwave Theory and Techniques. 73(1):38-44

    مصطلحات موضوعية: power amplifiers (PAs), Dispersive effects, gallium nitride (GaN), time-varying systems, electrothermal device modeling

    وصف الملف: electronic

    URL الوصول: https://research.chalmers.se/publication/543101
    https://research.chalmers.se/publication/543101/file/543101_Fulltext.pdf

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