المؤلفون: Wang, Hongqi¹ (AUTHOR), Shi, Wei¹ (AUTHOR) swshi@mail.xaut.edu.cn, Ma, Cheng¹ (AUTHOR), Wu, Meilin¹ (AUTHOR), Tao, Jiang¹ (AUTHOR), Chen, Kaipeng¹ (AUTHOR)

المصدر: Journal of Applied Physics. 1/14/2025, Vol. 137 Issue 2, p1-10. 10p.

مصطلحات موضوعية: *GALLIUM arsenide semiconductors, *INERTIAL confinement fusion, *PULSED lasers, *GALLIUM arsenide, *ELECTRIC fields, *LASER pulses

المؤلفون: Komaba, Shintaro¹ (AUTHOR), Taketa, Nana¹ (AUTHOR), Asami, Meita² (AUTHOR), Sugiyama, Masakazu² (AUTHOR), Ikari, Tetsuo¹ (AUTHOR), Fukuyama, Atsuhiko¹ (AUTHOR) a-fukuyama@cc.miyazaki-u.ac.jp

المصدر: Journal of Applied Physics. 4/21/2024, Vol. 135 Issue 15, p1-9. 9p.

مصطلحات موضوعية: *INDIUM gallium arsenide, *PHOTOLUMINESCENCE measurement, *ELECTRIC fields, *QUANTUM wells, *STARK effect, *CARRIER density, *GALLIUM arsenide, *PHOTOLUMINESCENCE

المؤلفون: Schwade, Martin¹ (AUTHOR), Schilcher, Maximilian J.¹ (AUTHOR), Reverón Baecker, Christian¹ (AUTHOR), Grumet, Manuel¹ (AUTHOR), Egger, David A.¹ (AUTHOR) david.egger@tum.de

المصدر: Journal of Chemical Physics. 4/7/2024, Vol. 160 Issue 13, p1-10. 10p.

مصطلحات موضوعية: *GALLIUM arsenide semiconductors, *DENSITY functional theory, *ATOMIC orbitals, *HIGH temperatures, *MACHINE learning

المؤلفون: Wang, T. B.^1,2 (AUTHOR), Wang, Z. X.^1,2 (AUTHOR), Zhang, S. Y.^1,2 (AUTHOR), Li, M.^1,2 (AUTHOR), Tang, G. H.^1,2 (AUTHOR), Zhuang, Y.^1,2 (AUTHOR), Yang, X.^1,2 (AUTHOR), Aierken, A.^1,2 (AUTHOR) erkin@ynnu.edu.cn

المصدر: Journal of Applied Physics. 2/7/2024, Vol. 135 Issue 5, p1-10. 10p.

مصطلحات موضوعية: *INDIUM gallium arsenide, *SOLAR cells, *GALLIUM arsenide, *PHOTOVOLTAIC power systems, *AUDITING standards, *IRRADIATION, *OPEN-circuit voltage

المؤلفون: Zon¹ (AUTHOR), Voranthamrong, Samatcha¹ (AUTHOR), Cheng, Chao-Chia² (AUTHOR), Lo, Tzu-Wei¹ (AUTHOR), Li, Zhen-Lun¹ (AUTHOR), Liu, Chun-Nien¹ (AUTHOR), Chiang, Chun-De³ (AUTHOR), Hung, Li-Wei³ (AUTHOR), Hsu, Ming-Sen³ (AUTHOR), Liu, Wei-Sheng⁴ (AUTHOR), Chyi, Jen-Inn⁵ (AUTHOR), Tu, Charles W.¹ (AUTHOR) ctu@ucsd.edu

المصدر: Journal of Applied Physics. 1/28/2024, Vol. 135 Issue 4, p1-11. 11p.

مصطلحات موضوعية: *INDIUM gallium arsenide, *QUANTUM wells, *MOLECULAR beam epitaxy, *GALLIUM arsenide, *AUDITING standards, *X-ray diffraction

المؤلفون: Huang, Jiahui¹ (AUTHOR) jiahuihuang@ucla.edu, Liu, Wei¹ (AUTHOR) weiliu01@lbl.gov, Cheng, Xiang¹ (AUTHOR), Miranda, Alessio² (AUTHOR), Dwir, Benjamin² (AUTHOR), Rudra, Alok² (AUTHOR), Kapon, Eli² (AUTHOR), Wong, Chee Wei¹ (AUTHOR) cheewei.wong@ucla.edu

المصدر: Journal of Applied Physics. 12/14/2023, Vol. 134 Issue 22, p1-11. 11p.

مصطلحات موضوعية: *INDIUM gallium arsenide, *QUANTUM dots, *QUANTUM information science, *POPULATION transfers, *PHOTONIC crystals, *PHONON scattering

المؤلفون: Leo, Karl¹ (AUTHOR) karl.leo@tu-dresden.de, Fuentes-Hernandez, Canek² (AUTHOR), Konstantatos, Gerasimos³ (AUTHOR), Yokota, Tomoyuki⁴ (AUTHOR)

المصدر: Applied Physics Letters. 1/13/2025, Vol. 126 Issue 2, p1-4. 4p.

مصطلحات موضوعية: *INDIUM gallium arsenide, *ELECTRONIC noise, *OPTOELECTRONIC devices, *GREEN light, *AMORPHOUS semiconductors, *HETEROJUNCTIONS, *POLYMER blends, *INDIUM gallium zinc oxide

المؤلفون: Jang, Junho¹ (AUTHOR), Geum, Dae‐Myeong^1,2 (AUTHOR), Kang, Il‐Suk³ (AUTHOR), Oh, Yeon‐Wha³ (AUTHOR), Jung, Sanghee³ (AUTHOR), Cho, Huijae³ (AUTHOR), Kim, SangHyeon¹ (AUTHOR) shkim.ee@kaist.ac.kr

المصدر: Laser & Photonics Reviews. Dec2024, p1. 11p. 8 Illustrations.

مصطلحات موضوعية: *INDIUM gallium arsenide, *PHOTODETECTORS, *RESONANCE, *WAVELENGTHS, *ABSORPTION, *MULTISPECTRAL imaging

المؤلفون: Liu, Chun¹ (AUTHOR), Xu, Ming^1,2 (AUTHOR) xuming@xaut.edu.cn, Chen, Shengtao¹ (AUTHOR), Sun, Li² (AUTHOR), Zhang, Liqing² (AUTHOR), Li, Qianqian² (AUTHOR), Wang, Jiahao² (AUTHOR)

المصدر: Journal of Physics D: Applied Physics. 12/13/2024, Vol. 57 Issue 49, p1-7. 7p.

مصطلحات موضوعية: *GALLIUM arsenide semiconductors, *ELECTRIC currents, *ELECTRIC distortion, *ELECTRIC transients, *CARRIER density

المؤلفون: Shtrom, Igor V.^1,2,3 (AUTHOR) i.shtorm@spbu.ru, Sibirev, Nickolai V.¹ (AUTHOR), Soshnikov, Ilya P.^3,4 (AUTHOR), Ilkiv, Igor V.^1,2,3 (AUTHOR), Ubyivovk, Evgenii V.^1,4 (AUTHOR), Reznik, Rodion R.^1,2,3 (AUTHOR), Cirlin, George E.^1,2,3,5 (AUTHOR)

المصدر: Nanomaterials (2079-4991). Dec2024, Vol. 14 Issue 23, p1860. 9p.

مصطلحات موضوعية: *GALLIUM arsenide, *NANOWIRES, *ARSENIC, *SUBSTRATES (Materials science), *AUDITING standards, *MOLECULAR beam epitaxy, *SILICON nanowires, *SEMICONDUCTOR nanowires

المؤلفون: Watanabe, Tomonobu M.^1,2 (AUTHOR) tomowatanabe@riken.jp, Ueda, Seiko³ (AUTHOR), Ishida, Saki³ (AUTHOR), Shioi, Go¹ (AUTHOR), Kaneshiro, Junichi¹ (AUTHOR), Magari, Michi³ (AUTHOR)

المصدر: International Journal of Cosmetic Science. Dec2024, Vol. 46 Issue 6, p850-864. 15p.

مصطلحات موضوعية: *INDIUM gallium arsenide, *POLARIZATION microscopy, *CIRCULAR polarization, *HAIR care & hygiene, *NUMERICAL analysis

المؤلفون: Bouagila, S., Ilahi, S., Baira, M., Mandelis, A., Yacoubi, N.

المصدر: Journal of Applied Physics; 10/28/2024, Vol. 136 Issue 16, p1-16, 16p

مصطلحات موضوعية: CHARGE carrier lifetime, LASER beams, AUDITING standards, GALLIUM arsenide, SEMICONDUCTORS

المؤلفون: Newell, A. T.^1,2 (AUTHOR), Logan, J. V.¹ (AUTHOR), Carrasco, R. A.¹ (AUTHOR), Hains, C. P.^1,3 (AUTHOR), Ariyawansa, G.⁴ (AUTHOR), Duran, J. M.⁴ (AUTHOR), Balakrishnan, G.² (AUTHOR), Maestas, D.¹ (AUTHOR), Morath, C. P.¹ (AUTHOR), Webster, P. T.¹ (AUTHOR) preston.webster.2@spaceforce.com

المصدر: Journal of Applied Physics. 10/14/2023, Vol. 134 Issue 14, p1-8. 8p.

مصطلحات موضوعية: *IRRADIATION, *INDIUM gallium arsenide, *QUANTUM efficiency, *PROTONS, *PHOTODETECTORS, *CARRIER density

المؤلفون: Duan, Juanmei^1,2 (AUTHOR) juanmei.duan@uni-oldenburg.de, Liedke, Maciej O.³ (AUTHOR), Dawidowski, Wojciech⁴ (AUTHOR), Li, Rang¹ (AUTHOR), Butterling, Maik³ (AUTHOR), Hirschmann, Eric³ (AUTHOR), Wagner, Andreas³ (AUTHOR), Wang, Mao¹ (AUTHOR), Young, Lawrence Boyu⁵ (AUTHOR), Lin, Yen-Hsun Glen⁵ (AUTHOR), Hong, Minghwei⁵ (AUTHOR), Helm, Manfred^1,2 (AUTHOR), Zhou, Shengqiang¹ (AUTHOR), Prucnal, Slawomir¹ (AUTHOR) s.prucnal@hzdr.de

المصدر: Journal of Applied Physics. 9/7/2023, Vol. 134 Issue 9, p1-14. 14p.

مصطلحات موضوعية: *AUDITING standards, *GALLIUM arsenide, *POSITRON annihilation, *PLASMONICS, *CARRIER density, *NANOFABRICATION

المؤلفون: BOONE, CORY¹, SISCHKA, NICK²

المصدر: Vision Systems Design. Winter2024, p6-9. 3p.

مصطلحات موضوعية: *FOOD inspection, INDIUM gallium arsenide, COMPUTER vision, RED light, IMAGING systems, IMAGE sensors

المؤلفون: Lin, Jingbo¹ (AUTHOR), Zhao, Guijuan¹ (AUTHOR), Zhou, Ziwei¹ (AUTHOR), Liu, Xiacong² (AUTHOR), Wang, Xingliang¹ (AUTHOR), Wei, Wanting¹ (AUTHOR), Hao, Zhiyuan¹ (AUTHOR), Wang, Yuhang¹ (AUTHOR), Liu, Guipeng¹ (AUTHOR) liugp@lzu.edu.cn

المصدر: Physica Status Solidi - Rapid Research Letters. Nov2024, p1. 6p. 6 Illustrations.

مصطلحات موضوعية: *AVALANCHE photodiodes, *INDIUM gallium arsenide, *NOISE, *PERFORMANCE theory

المؤلفون: Wang, Changsi¹ (AUTHOR) chance_w@163.com, Wang, Yan¹ (AUTHOR), Kong, Xin¹ (AUTHOR)

المصدر: International Journal of Numerical Modelling. Nov2024, Vol. 37 Issue 6, p1-10. 10p.

مصطلحات موضوعية: *MONOLITHIC microwave integrated circuits, *GALLIUM arsenide transistors, *SWITCHING circuits, *INSERTION loss (Telecommunication), *AUDITING standards

المؤلفون: Shi, Ming^1,2 (AUTHOR) 2019057@mail.scuec.edu.cn, Zhang, Weimin^1,2 (AUTHOR), Zhou, Bingyu^1,2 (AUTHOR), Hou, Jin^1,2 (AUTHOR), Yang, Chunyong^1,2 (AUTHOR), Wang, Rui³ (AUTHOR) rui.wang-4@manchester.ac.uk

المصدر: Applied Physics Letters. 10/7/2024, Vol. 125 Issue 15, p1-6. 6p.

مصطلحات موضوعية: *AVALANCHE diodes, *INDIUM gallium arsenide, *PHOTON counting, *LIGHT absorption, *OPERATING rooms

المؤلفون: Suchikova, Yana¹ (AUTHOR) ya_suchikova@bdpu.org.ua, Lysak, Anastasiia² (AUTHOR), Kovachov, Sergii¹ (AUTHOR), Konuhova, Marina³ (AUTHOR) marina.konuhova@cfi.lu.lv, Zhydachevskyy, Yaroslav^1,2 (AUTHOR), Popov, Anatoli I.³ (AUTHOR) popov@latnet.lv

المصدر: Physica Status Solidi. A: Applications & Materials Science. Sep2024, Vol. 221 Issue 18, p1-10. 10p.

مصطلحات موضوعية: *GALLIUM arsenide semiconductors, *OPTICAL properties, *RAMAN spectroscopy, *ARSENIC poisoning, *SUBSTRATES (Materials science)

المؤلفون: Tolbanov, O. P.¹ (AUTHOR) top@mail.tsu.ru

المصدر: Russian Physics Journal. Sep2024, Vol. 67 Issue 9, p1492-1499. 8p.

مصطلحات موضوعية: *SEMICONDUCTOR materials, *GALLIUM arsenide, *ELECTRONIC equipment, *PHOTOSENSITIVITY, *SEMICONDUCTORS