المؤلفون: F. M. Bufler, H. Arimura, P. Favia, G. Eneman, P. Matagne, N. Horiguchi, G. Hellings

المصدر: IEEE Transactions on Electron Devices. 69:6384-6387

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e5cf92e950f90bc2415db502ee6fd6d2
https://doi.org/10.1109/ted.2022.3204934

المؤلفون: T. Nuytten, J. Bogdanowicz, L. Witters, G. Eneman, T. Hantschel, A. Schulze, P. Favia, H. Bender, I. De Wolf, W. Vandervorst

المصدر: APL Materials, Vol 6, Iss 5, Pp 058501-058501-6 (2018)

مصطلحات موضوعية: Biotechnology, TP248.13-248.65, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2166-532X

URL الوصول: https://doaj.org/article/3e32e14132ee4fffbb250fe3586355c3

المؤلفون: A. Veloso, G. Eneman, P. Matagne, B. Vermeersch, A. Jourdain, H. Arimura, B. O'Sullivan, R. Chen, A. De Keersgieter, E. Simoen, D. Radisic, Y. Oniki, A. Laffitte, S. Brus, E. Beyne, E. Dentoni Litta, N. Horiguchi

المصدر: 2022 International Electron Devices Meeting (IEDM).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8a79086230a5230b81cef74e3d9866df
https://doi.org/10.1109/iedm45625.2022.10019521

المؤلفون: A. Veloso, G. Eneman, A. De Keersgieter, P. Favia, A. Hikavyy, R. Chen, A. Jourdain, N. Horiguchi

المصدر: 2022 International Conference on IC Design and Technology (ICICDT).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::78568099a5be6f3150233819e0fc5fbb
https://doi.org/10.1109/icicdt56182.2022.9933131

المؤلفون: A. Veloso, P. Matagne, T. Huynh-Bao, G. Eneman, R. Loo, K. Wostyn, S. Brus, J. Boemmels, D. Mocuta, J. Ryckaert

المصدر: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.

مصطلحات موضوعية: 010302 applied physics, Fabrication, Materials science, 0103 physical sciences, Nanowire, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 0210 nano-technology, 01 natural sciences

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8828ebfc83e70a88f39aedf01a4ad6b9
https://doi.org/10.7567/ssdm.2018.c-1-03

المؤلفون: L. Pantisano, L. Trojman, J. Mitard, B. DeJaeger, S. Severi, G. Eneman, T. Hoffmann, I. Ferain, M. Meuris, M. Heyns, CRUPI, GIOVANNI

المساهمون: L. Pantisano, L. Trojman, J. Mitard, B. DeJaeger, S. Severi, G. Eneman, G. Crupi, T. Hoffmann, I. Ferain, M. Meuri, M. Heyns

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781424418053; info:eu-repo/semantics/altIdentifier/wos/WOS:000259442500019; ispartofbook:IEEE Symposium on VLSI Technology; IEEE Symposium on VLSI Technology; firstpage:52; lastpage:53; http://hdl.handle.net/11570/1898726; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-51949100953

الاتاحة: http://hdl.handle.net/11570/1898726
https://doi.org/10.1109/VLSIT.2008.4588560

المؤلفون: K. Takakura, H. Ohyama, K. Hayama, Y. Aoki, G. Eneman, P. Verheyen, E. Simoen, R. Loo, C. Claeys

المصدر: Materials Science in Semiconductor Processing. 9:732-736

مصطلحات موضوعية: Mechanics of Materials, Mechanical Engineering, General Materials Science, Condensed Matter Physics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b753073be86b145d16e6f53bad49ca79
https://doi.org/10.1016/j.mssp.2006.08.053

المؤلفون: G. Hellings, J. Mitard, G. Eneman, B. De Jaeger, D.P. Brunco, D. Shamiryan, T. Vandeweyer, M. Meuris, M.M. Heyns, K. De Meyer

المصدر: IEEE Electron Device Letters. 30:88-90

مصطلحات موضوعية: Fabrication, Materials science, Silicon, Equivalent series resistance, business.industry, Electrical engineering, chemistry.chemical_element, Germanium, Short-channel effect, Electronic, Optical and Magnetic Materials, chemistry, MOSFET, Microelectronics, Optoelectronics, Electrical and Electronic Engineering, business, Boron

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e94d42cbc942b38b7bfbef787dfccf26
https://doi.org/10.1109/led.2008.2008824

المؤلفون: S. Jakschik, T. Hoffmann, H.-J. Cho, A. Veloso, R. Loo, S. Hyun, H. Sorada, A. Inoue, M.d. Potter, G. Eneman, S. Severi, P. Absil, S. Biesemans

المصدر: 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

مصطلحات موضوعية: Electron mobility, Materials science, Silicon, business.industry, Transistor, Electrical engineering, chemistry.chemical_element, Substrate (electronics), law.invention, chemistry, law, Optoelectronics, Field-effect transistor, business, Dram, Communication channel, High-κ dielectric

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::875ffe1d0c24c4cd29bfa6bafe06ee4e
https://doi.org/10.1109/vtsa.2007.378905

المؤلفون: Eddy Simoen, G. Eneman, Sheron Shamuilia, V. Simons, Eugenijus Gaubas, R. Delhougne, R. Loo, K. De Meyer, C. Claeys

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::06221613f76e5983cfb500aa0f90697e
https://doi.org/10.4028/3-908451-13-2.285

المؤلفون: E. Simoen, J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, M. Myronov, M. Meuris, T. Hoffmann, C. Claeys

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://wrap.warwick.ac.uk/38489/1/WRAP_Leadley_9573062-px-181011-ted_noise_in_sge_pre-pub.pdf.

مصطلحات موضوعية: low-frequency noise, generation-recombination noise, strained and relaxed germanium, hole mobility

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.465.3542; http://wrap.warwick.ac.uk/38489/1/WRAP_Leadley_9573062-px-181011-ted_noise_in_sge_pre-pub.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.465.3542
http://wrap.warwick.ac.uk/38489/1/WRAP_Leadley_9573062-px-181011-ted_noise_in_sge_pre-pub.pdf

المؤلفون: G. Giusi, E. Simoen, G. Eneman, P. Verheyen, F. Crupi, K. De Meyer, C. Claeys, C. Ciofi

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://www.felicecrupi.it/wp-content/uploads/2011/03/EDL06_A.pdf.

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.453.8417; http://www.felicecrupi.it/wp-content/uploads/2011/03/EDL06_A.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.453.8417
http://www.felicecrupi.it/wp-content/uploads/2011/03/EDL06_A.pdf

المؤلفون: E. Simoen, G. Eneman, S. Shamuilia, V. Simons, E. Gaubas, R. Delhougne, R. Loo, K. De Meyer, C. Claeys

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://www.scientific.net/SSP.108-109.285.pdf.

مصطلحات موضوعية: Strained-silicon, strain-relaxed buffer layers, threading and misfit dislocations, carrier

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.430.4160; http://www.scientific.net/SSP.108-109.285.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.430.4160
http://www.scientific.net/SSP.108-109.285.pdf

المؤلفون: Paola Favia, Mihaela Popovici, G. Eneman, Gang Wang, Mireia Bargallo-Gonzalez, Eddy Simoen, Nicolas Menou, Hugo Bender

المصدر: ECS Meeting Abstracts. :1572-1572

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::689653f84c650a2ccb98fba35a80b8b4
https://doi.org/10.1149/ma2010-02/23/1572

المؤلفون: P Favia, O Richard, G Eneman, H Mertens, H Arimura, E Capogreco, A Hikavyy, L Witters, P Kundu, R Loo, E Vancoille, H Bender

المصدر: Semiconductor Science & Technology; Dec2019, Vol. 34 Issue 12, p1-1, 1p

مصطلحات موضوعية: NANOWIRE devices, COMPLEMENTARY metal oxide semiconductors, NANOWIRES, FIELD-effect transistors, GEOMETRIC quantum phases, TRANSISTORS, SEMICONDUCTOR devices, TRANSMISSION electron microscopy

المؤلفون: C Claeys, P-C Hsu, L He, Y Mols, R Langer, N Waldron, G Eneman, N Collaert, M Heyns, E Simoen

المصدر: Journal of Physics: Conference Series; 2019, Vol. 1190 Issue 1, p1-1, 1p

المؤلفون: P C (Brent) Hsu, E Simoen, G Eneman, C Merckling, A Alian, R Langer, N Collaert, M Heyns

المصدر: Journal of Physics: Conference Series; 2019, Vol. 1190 Issue 1, p1-1, 1p

المؤلفون: A Veloso, P Matagne, E Simoen, B Kaczer, G Eneman, H Mertens, D Yakimets, B Parvais, D Mocuta

المصدر: Journal of Physics: Condensed Matter; 9/26/2018, Vol. 30 Issue 38, p1-1, 1p