المؤلفون: Millesimo M., Fiegna C., Posthuma N., Borga M., Bakeroot B., Decoutere S., Tallarico A. N.

المساهمون: Millesimo M., Fiegna C., Posthuma N., Borga M., Bakeroot B., Decoutere S., Tallarico A.N.

مصطلحات موضوعية: Forward gate stre, gate reliability, isolation failure, lifetime model, p-GaN high-electron-mobility transistor (HEMT), temperature dependency, time-dependent gate breakdown (TDGB)

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000711645500060; volume:68; issue:11; firstpage:5701; lastpage:5706; numberofpages:6; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; https://hdl.handle.net/11585/838778; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85115168496; https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9540042

الاتاحة: https://hdl.handle.net/11585/838778
https://doi.org/10.1109/TED.2021.3111144
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9540042

المؤلفون: Niels Posthuma, Claudio Fiegna, Andrea Natale Tallarico, M. Millesimo, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere

المساهمون: Millesimo M., Fiegna C., Posthuma N., Borga M., Bakeroot B., Decoutere S., Tallarico A.N.

المصدر: IEEE Transactions on Electron Devices

مصطلحات موضوعية: Materials science, Electric breakdown, p-GaN high-electron-mobility transistor (HEMT), 01 natural sciences, law.invention, Stress (mechanics), Forward gate stre, Reliability (semiconductor), law, 0103 physical sciences, Constant voltage, Electrical and Electronic Engineering, lifetime model, 010302 applied physics, gate reliability, business.industry, Transistor, isolation failure, Electronic, Optical and Magnetic Materials, Power (physics), temperature dependency, Logic gate, Voltage dependency, Optoelectronics, time-dependent gate breakdown (TDGB), business

وصف الملف: ELETTRONICO

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2541fee9ac90d47520eed73f3f08f3fd
http://hdl.handle.net/11585/838778

المؤلفون: Tallarico A. N., Stoffels S., Posthuma N., Bakeroot B., Decoutere S., Sangiorgi E., Fiegna C.

المساهمون: Tallarico A.N., Stoffels S., Posthuma N., Bakeroot B., Decoutere S., Sangiorgi E., Fiegna C.

مصطلحات موضوعية: Forward gate stre, gate metal retraction (GMR), impact ionization, isolation, p-GaN HEMT, reliability, threshold voltage instability, time-dependent gate breakdown, trapping mechanisms

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000494419900048; volume:66; issue:11; firstpage:4829; lastpage:4835; numberofpages:7; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; http://hdl.handle.net/11585/705168; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85074449027; https://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=16

الاتاحة: http://hdl.handle.net/11585/705168
https://doi.org/10.1109/TED.2019.2938598
https://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=16

المؤلفون: Claudio Fiegna, Stefaan Decoutere, Steve Stoffels, Benoit Bakeroot, Enrico Sangiorgi, Andrea Natale Tallarico, Niels Posthuma

المساهمون: Tallarico A.N., Stoffels S., Posthuma N., Bakeroot B., Decoutere S., Sangiorgi E., Fiegna C.

مصطلحات موضوعية: 010302 applied physics, trapping mechanisms, Materials science, reliability, Condensed matter physics, p-GaN HEMT, gate metal retraction (GMR), Schottky diode, Biasing, High-electron-mobility transistor, 01 natural sciences, Electronic, Optical and Magnetic Materials, Threshold voltage, time-dependent gate breakdown, Impact ionization, Forward gate stre, Logic gate, Ionization, 0103 physical sciences, impact ionization, Electrical and Electronic Engineering, isolation, Voltage, threshold voltage instability

وصف الملف: ELETTRONICO

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd0c41c66a1d80c6163fbb46aa75e710
http://hdl.handle.net/11585/705168