يعرض 1 - 20 نتائج من 85 نتيجة بحث عن '"Forrester C."', وقت الاستعلام: 0.66s تنقيح النتائج
  1. 1
    Academic Journal

    المؤلفون: Yuan, H, Pal, S, Forrester, C, He, Q, Briscoe, J

    Relation: Journal of Materials Chemistry A; @Article{D3TA05617A, author ="Yuan, Haozhen and Pal, Subhajit and Forrester, Chloe and He, Qinrong and Briscoe, Joe", title ="Understanding the impact of Bi stoichiometry towards optimised BiFeO3 photocathodes: structure{,} morphology{,} defects and ferroelectricity", journal ="J. Mater. Chem. A", year ="2024", volume ="12", issue ="28", pages ="17422-17431", publisher ="The Royal Society of Chemistry", doi ="10.1039/D3TA05617A", url ="http://dx.doi.org/10.1039/D3TA05617A", abstract ="BiFeO3 thin films have been widely studied for photoelectrochemical water splitting applications because of its narrow bandgap and good ferroelectricity which can promote the separation of photo-generated charges. Bismuth is well known as a volatile element and excess bismuth is usually added into the precursor to compensate the loss of bismuth during heat treatment{,} but the amount of excess bismuth required and how excess bismuth will affect PEC performance have not been clearly studied. Herein{,} self-doped Bi1+xFeO3 thin films are prepared via simple chemical solution deposition method with excess bismuth from 0–30% in the precursor. The loss of bismuth after annealing is confirmed by EDX and XPS. Multiple factors were investigated and it was found that non-stoichiometric Bi resulted in changes of structure{,} morphology{,} defects{,} electronic properties and PEC performance. An enhanced photocurrent is observed in bismuth-rich BiFeO3 films{,} which can be ascribed to the larger grain size{,} decreased oxygen vacancies{,} lattice distortion and supported charge separation. Moreover{,} the photocathodic performance can be further enhance by ferroelectric poling. Our work indicates that deficient bismuth should be carefully avoided during heat treatment and moreover{,} a slight excess of Bi is beneficial for PEC performance. Therefore{,} we offer a simple way to enhance PEC performance of BiFeO3-based ferroelectric materials through careful control of their stoichiometry."}; https://qmro.qmul.ac.uk/xmlui/handle/123456789/98220

  2. 2
    Academic Journal

    المساهمون: Collins, C. G., Elmendorf, S. C., Hollister, R. D., Henry, G. H. R., Clark, K., Bjorkman, A. D., Myers-Smith, I. H., Prevey, J. S., Ashton, I. W., Assmann, J. J., Alatalo, J. M., Carbognani, M., Chisholm, C., Cooper, E. J., Forrester, C., Jonsdottir, I. S., Klanderud, K., Kopp, C. W., Livensperger, C., Mauritz, M., May, J. L., Molau, U., Oberbauer, S. F., Ogburn, E., Panchen, Z. A., Petraglia, A., Post, E., Rixen, C., Rodenhizer, H., Schuur, E. A. G., Semenchuk, P., Smith, J. G., Steltzer, H., Totland, O., Walker, M. D., Welker, J. M., Suding, K. N.

    Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000663755500001; volume:12; issue:1; firstpage:3442; journal:NATURE COMMUNICATIONS; https://hdl.handle.net/11381/2898943

  3. 3
    Academic Journal
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    Academic Journal
  5. 5
    Academic Journal
  6. 6
    Academic Journal
  7. 7
    Report
  8. 8
    Academic Journal
  9. 9
  10. 10
    Academic Journal

    المؤلفون: Braun L, Dooley M, Forrester C, Duncan A, Mackie K

    المصدر: BMC Complementary and Alternative Medicine, Vol 12, Iss Suppl 1, p P295 (2012)

    مصطلحات موضوعية: Other systems of medicine, RZ201-999

    وصف الملف: electronic resource

  11. 11
    Academic Journal
  12. 12
    Academic Journal
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    Academic Journal
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    Academic Journal
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    Academic Journal
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    Academic Journal
  17. 17
    Academic Journal

    المصدر: Fortnight, 1990 Jun 01(285), 33-33.

  18. 18
    Academic Journal
  19. 19
    Academic Journal
  20. 20
    Conference

    المؤلفون: Forrester, C., Arjomandi, M.

    المساهمون: Australasian Association for Engineering Education Conference (20th : 2009 : Adelaide, South Australia)

    Relation: Proceedings of the 20th 2009 AaeE Conference, 2009: pp.305-310; http://hdl.handle.net/2440/58363; Arjomandi, M. [0000-0002-7669-2221]