المؤلفون: Carter, R., Mazurier, J., Pirro, L., Sachse, J-U., Baars, P., Faul, J., Grass, C., Grasshoff, G., Javorka, P., Kammler, T., Preusse, A., Nielsen, S., Heller, T., Schmidt, J., Niebojewski, H., Chou, P-Y., Smith, E., Erben, E., Metze, C., Bao, C., Andee, Y., Aydin, I., Morvan, S., Bernard, J., Bourjot, E., Feudel, T., Harame, D., Nelluri, R., Thees, H.-J., M-Meskamp, L., Kluth, J., Mulfinger, R., Rashed, M., Taylor, R., Weintraub, C., Hoentschel, J., Vinet, M., Schaeffer, J., Rice, B.

المصدر: 2016 IEEE International Electron Devices Meeting (IEDM)

الاتاحة: https://doi.org/10.1109/iedm.2016.7838029
http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838029.pdf?arnumber=7838029

المؤلفون: Capello, L., Metzger, T. H., Werner, M., van den Berg, J. A., Servidori, M., Ottaviano, L., Bongiorno, C., Mannino, G., Feudel, T., Herden, M., Holý, V.

المصدر: Journal of Applied Physics; 11/15/2006, Vol. 100 Issue 10, p103533, 10p, 1 Color Photograph, 2 Charts, 7 Graphs

مصطلحات موضوعية: METAL oxide semiconductors, DOPED semiconductors, ION implantation, SILICON crystals, X-ray scattering, TRANSMISSION electron microscopy, ANNEALING of crystals

المؤلفون: Baldauf, T., Wei, A., Illgen, R., Flachowsky, S., Herrmann, T., Feudel, T., Hontschel, J., Horstmann, M., Klix, W., Stenzel, R.

المصدر: Ulis 2011 Ultimate Integration on Silicon ; volume 6, page 1-4

الاتاحة: http://dx.doi.org/10.1109/ulis.2011.5757974
http://xplorestaging.ieee.org/ielx5/5751927/5757945/05757974.pdf?arnumber=5757974

المؤلفون: Illgen, R., Flachowsky, S., Herrmann, T., Feudel, T., Thron, D., Bayha, B., Klix, W., Horstmann, M., Stenzel, R.

المصدر: 2009 10th International Conference on Ultimate Integration of Silicon ; page 157-160

الاتاحة: http://dx.doi.org/10.1109/ulis.2009.4897561
http://xplorestaging.ieee.org/ielx5/4832838/4897524/04897561.pdf?arnumber=4897561

المؤلفون: Cristianoa, F., Lauwers, A., Pichler, P., Feudel, T., Windil, W.

Time: 670, 620

Relation: Symposium "Front-End Junction and Contact Formation in Future Silicon/Germanium based Devices" 2008; Front-end junction and contact formation in future silicon/germanium based devices; https://publica.fraunhofer.de/handle/publica/359487

الاتاحة: https://publica.fraunhofer.de/handle/publica/359487
https://doi.org/10.1016/j.mseb.2008.10.022

المؤلفون: Wei, A., Wiatr, M., Mowry, A., Gehring, A., Boschke, R., Scott, C., Hoentschel, J., Duenkel, S., Gerhardt, M., Feudel, T., Lenski, M., Wirbeleit, F., Otterbach, R., Callahan, R., Koerner, G., Krumm, N., Greenlaw, D., Raab, M., Horstmann, M.

المصدر: 2007 IEEE Symposium on VLSI Technology ; page 216-217

الاتاحة: http://dx.doi.org/10.1109/vlsit.2007.4339698
http://xplorestaging.ieee.org/ielx5/4339664/4339665/04339698.pdf?arnumber=4339698

المؤلفون: Herrmann, T., Klix, W., Stenzel, R., Duenkel, S., Illgen, R., Hoentschel, J., Feudel, T., Horstmann, M.

المصدر: Simulation of Semiconductor Processes and Devices 2007 ; page 101-104 ; ISBN 9783211728604

الاتاحة: http://dx.doi.org/10.1007/978-3-211-72861-1_24
http://link.springer.com/content/pdf/10.1007/978-3-211-72861-1_24.pdf

المؤلفون: Herrmann, T., Klix, W., Stenzel, R., Feudel, T., Hoentschel, J., Horstmann, M.

المصدر: 2006 International Semiconductor Conference ; page 345-348

الاتاحة: http://dx.doi.org/10.1109/smicnd.2006.284015
http://xplorestaging.ieee.org/ielx5/4063137/4063203/04063243.pdf?arnumber=4063243

المؤلفون: Su, L.T., Pellerin, J., Huang, S.F., Khare, M., Schepis, D., Rim, K., Liming, S., Waite, A., Sato, T., Panda, S., Nii, H., Lee, W., Holt, J., Fried, D., Chidambarrao, D., Chen, H., Kepler, N., Raab, M., Greenlaw, D., Stephan, R., Hubler, P., Ruelke, H., Herzog, O., Engelmann, H.-J., Schaller, M., Salz, H., Trui, B., Trentsch, M., Reichel, C., Press, P., Otterbach, R., Neu, A., Lenski, M., Koerner, G., Klais, J., Javorka, P., Hohage, J., Hempel, K., Hellmich, A., Gerhardt, M., Frohberg, K., Feudel, T., Bierstedt, H., Hontschel, J., Kammler, T., Wei, A., Horstmann, M.

المصدر: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

الاتاحة: http://dx.doi.org/10.1109/iedm.2005.1609315
http://xplorestaging.ieee.org/ielx5/10701/33791/01609315.pdf?arnumber=1609315

المؤلفون: Greenlaw, D., Burbach, G., Feudel, T., Feustel, F., Frohberg, K., Graetsch, F., Grasshoff, G., Hartig, C., Heller, T., Hempel, K., Horstmann, M., Huebler, P., Kirsch, R., Kruegel, S., Langer, E., Pawlowitsch, A., Ruelke, H., Schuehrer, H., Stephan, R., Wei, A., Werner, T., Wieczorek, K., Raab, M.

المصدر: IEEE International Electron Devices Meeting 2003 ; page 11.1.1-11.1.4

الاتاحة: http://dx.doi.org/10.1109/iedm.2003.1269278
http://xplorestaging.ieee.org/ielx5/8960/28396/01269278.pdf?arnumber=1269278

المؤلفون: Mannino, G., Feudel, T., Pichler, P., Servidori, M.

مصطلحات موضوعية: CMOS, silicon

Time: 670, 620, 530

Relation: European Materials Research Society (Spring Meeting) 2004; Symposium B "Material Science Issues in Advanced CMOS Source-Drain Engineering" 2004; EMRS 2004, Symposium B, Material Science Issues in Advanced CMOS Source-Drain Engineering; https://publica.fraunhofer.de/handle/publica/345853

الاتاحة: https://publica.fraunhofer.de/handle/publica/345853
https://doi.org/10.1016/S0921-5107(04)00567-7

المؤلفون: Subba, N., Luning, S., Riccobene, C., Feudel, T., Wei, A., Horstmann, M.

المصدر: Simulation of Semiconductor Processes and Devices 2004 ; page 319-322 ; ISBN 9783709172124 9783709106242

الاتاحة: http://dx.doi.org/10.1007/978-3-7091-0624-2_75
http://link.springer.com/content/pdf/10.1007/978-3-7091-0624-2_75

المؤلفون: Dallmann, G., Feudel, T., Syhre, H., Lendenmann, H., Fichtner, W.

المصدر: Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics ; volume 93 1, page 305-308

الاتاحة: http://dx.doi.org/10.1109/ispsd.1994.583749
http://xplorestaging.ieee.org/ielx2/4460/12642/00583749.pdf?arnumber=583749

المؤلفون: Suzuki, K., Aoki, M., Kataoka, Y., Sasaki, N., Hoefler, A., Feudel, T., Strecker, N., Fichtner, W.

المصدر: International Electron Devices Meeting. Technical Digest ; page 799-802

الاتاحة: http://dx.doi.org/10.1109/iedm.1996.554100
http://xplorestaging.ieee.org/ielx3/4251/12029/00554100.pdf?arnumber=554100

المؤلفون: Fichtner, W., Feudel, T., Kells, K., Lilja, K., Litsios, J., Muller, S., Strecker, N.

المصدر: Proceedings of IEEE International Electron Devices Meeting ; page 93-96

الاتاحة: http://dx.doi.org/10.1109/iedm.1993.347391
http://xplorestaging.ieee.org/ielx2/1088/8045/00347391.pdf?arnumber=347391

المؤلفون: Westermann, M., Feudel, T., Strecker, N., Gappisch, S., Höfler, A., Fichtner, W.

المصدر: 3-Dimensional Process Simulation ; page 162-177 ; ISBN 9783709174302 9783709169056

الاتاحة: http://dx.doi.org/10.1007/978-3-7091-6905-6_8
http://link.springer.com/content/pdf/10.1007/978-3-7091-6905-6_8.pdf

المؤلفون: Werner, M, van den Berg, JA, Armour, DG, Carter, G, Feudel, T, Herden, M, Bersani, M, Giubertoni, D, Ottaviano, L, Bongiorno, C, Mannino, G, Bailey, P, Noakes, TCQ

مصطلحات موضوعية: QC Physics, Subjects outside of the University Themes

وصف الملف: application/pdf

Relation: http://usir.salford.ac.uk/id/eprint/357/1/van_den_Berg_3.pdf; Werner, M, van den Berg, JA, Armour, DG, Carter, G, Feudel, T, Herden, M, Bersani, M, Giubertoni, D, Ottaviano, L, Bongiorno, C, Mannino, G, Bailey, P and Noakes, TCQ 2005, 'Shallow BF2 implants in Xe-bombardment-preamorphized Si: the interaction between Xe and F' , Applied Physics Letters, 86 (15) , p. 151904.

الاتاحة: http://usir.salford.ac.uk/id/eprint/357/
http://usir.salford.ac.uk/id/eprint/357/1/van_den_Berg_3.pdf
http://link.aip.org/link/?APPLAB/86/151904/1
https://doi.org/10.1063/1.1900305

المؤلفون: Capello L, Metzger T H, Werner M, Berg J A van den, Servidori M, Herden M, Feudel T

Relation: urn:ISSN:0921-5107; Mater Sci Eng B; http://purl.org/net/epubs/series/1128; Council for the Central Laboratory of the Research Councils (1994-2007); Surface and Nuclear Division ( -2011); SRS - MEIS; http://purl.org/net/epubs/work/34855

الاتاحة: http://purl.org/net/epubs/work/34855

المؤلفون: Werner, M., Van den Berg, Jakob, Armour, D.G., Carter, G., Feudel, T., Herden, M., Bersani, M., Giubertoni, D., Bailey, Paul, Noakes, T.C.Q.

مصطلحات موضوعية: Q Science (General), QC Physics

Relation: Werner, M., Van den Berg, Jakob, Armour, D.G., Carter, G., Feudel, T., Herden, M., Bersani, M., Giubertoni, D., Bailey, Paul and Noakes, T.C.Q. (2004) The interaction between Xe and F in Si (100) pre-amorphised with 20keV Xe and implanted with low energy BF2. Materials Science and Engineering: B, 114-11. pp. 198-202. ISSN 0921-5107

الاتاحة: http://eprints.hud.ac.uk/id/eprint/14838/
https://doi.org/10.1016/j.mseb.2004.07.059

المؤلفون: Werner M, van den Berg JA, Armour DG, Carter G, Feudel T, Herden M, Bersani M, Giubertoni D, Bailey P, Noakes TCQ

مصطلحات موضوعية: Materials

Relation: urn:ISSN:0921-5107; Mater Sci Eng B; http://purl.org/net/epubs/series/1128; Council for the Central Laboratory of the Research Councils (1994-2007); SRS - MEIS; http://purl.org/net/epubs/work/35136

الاتاحة: http://purl.org/net/epubs/work/35136