يعرض 1 - 20 نتائج من 3,391 نتيجة بحث عن '"Ferroelectric RAM"', وقت الاستعلام: 1.36s تنقيح النتائج
  1. 1
    Academic Journal
    High Mobility Flexible Ferroelectric Organic Transistor Nonvolatile Memory With an Ultrathin AlOX Interfacial Layer.

    المؤلفون: Meili Xu1, Shuxu Guo1, Lanyi Xiang1, Ting Xu1, Wenfa Xie1, Wei Wang1

    المصدر: IEEE Transactions on Electron Devices. Mar2018, Vol. 65 Issue 3, p1113-1118. 6p.

    مصطلحات موضوعية: NONVOLATILE memory, FERROELECTRIC RAM, ORGANIC field-effect transistors, SEMICONDUCTOR films, FERROELECTRIC polymers, ATOMIC force microscopy


    أضف إلى المفضلة
  2. 2
    Academic Journal
    Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices.

    المؤلفون: Lin, Y. S.1, Zeng, F.1, Tang, S. G.1, Liu, H. Y.1, Chen, C.1, Gao, S.1, Wang, Y. G.1, Pan, F.1

    المصدر: Journal of Applied Physics. Feb2013, Vol. 113 Issue 6, p064510. 5p.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *X-ray photoelectron spectroscopy, *TRANSMISSION electron microscopy, *VALENCE (Chemistry), *ELECTRIC resistance, *INTERFACES (Physical sciences)


    أضف إلى المفضلة
  3. 3
    Academic Journal
    Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol.

    المؤلفون: Ghenzi, N.1, Sánchez, M. J.2, Rozenberg, M. J.3,4, Stoliar, P.1,5, Marlasca, F. G.1, Rubi, D.1,5, Levy, P.1

    المصدر: Journal of Applied Physics. Apr2012, Vol. 111 Issue 8, p084512. 5p. 4 Graphs.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *POLARITY (Physics), *FERROELECTRIC crystals, *FERROELECTRIC devices, *OPTICAL polarization


    أضف إلى المفضلة
  4. 4
    Academic Journal
    Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament.

    المؤلفون: Rahaman, S. Z.1, Maikap, S.1, Chen, W. S.2, Lee, H. Y.2, Chen, F. T.2, Tien, T. C.3, Tsai, M. J.2

    المصدر: Journal of Applied Physics. Mar2012, Vol. 111 Issue 6, p063710. 8p.

    مصطلحات موضوعية: *NANOSTRUCTURED materials, *FERROELECTRIC RAM, *TRANSMISSION electron microscopy, *ELECTRONICS, *PHYSICS


    أضف إلى المفضلة
  5. 5
    Academic Journal
    Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure.

    المؤلفون: Chen, C.1, Pan, F.1, Wang, Z. S.1, Yang, J.1, Zeng, F.1

    المصدر: Journal of Applied Physics. Jan2012, Vol. 111 Issue 1, p013702. 6p. 1 Diagram, 6 Graphs.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *ALUMINUM, *ZINC oxide, *SILICON, *ARRHENIUS equation, *SUBSTRATES (Materials science), *THIN films


    أضف إلى المفضلة
  6. 6
    Academic Journal
    Multi-level phase change memory devices with Ge2Sb2Te5 layers separated by a thermal insulating Ta2O5 barrier layer.

    المؤلفون: Gyanathan, Ashvini1, Yeo, Yee-Chia1

    المصدر: Journal of Applied Physics. Dec2011, Vol. 110 Issue 12, p124517. 7p. 2 Diagrams, 1 Chart, 11 Graphs.

    مصطلحات موضوعية: *PHASE change materials, *FERROELECTRIC RAM, *THERMAL insulation, *CRYSTALLIZATION, *THERMAL conductivity, *THERMAL analysis, *SILICA, *SUBSTRATES (Materials science)


    أضف إلى المفضلة
  7. 7
    Academic Journal
    A solution processed nonvolatile resistive memory device with Ti/CdSe quantum dot/Ti-TiOx/CdSe quantum dot/indium tin-oxide structure.

    المؤلفون: Kannan, V.1, Rhee, J. K.1

    المصدر: Journal of Applied Physics. Oct2011, Vol. 110 Issue 7, p074505. 4p.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *QUANTUM dots, *TIN compounds, *OXIDES, *TEMPERATURE


    أضف إلى المفضلة
  8. 8
    Academic Journal
    Diode and photocurrent effect in ferroelectric BaTiO3-δ.

    المؤلفون: Won, C. J.1, Park, Y. A.1, Lee, K. D.1, Ryu, H. Y.1, Hur, N.1

    المصدر: Journal of Applied Physics. Apr2011, Vol. 109 Issue 8, p084108. 4p.

    مصطلحات موضوعية: *FERROELECTRIC crystals, *FERROELECTRIC RAM, *DIODES, *VACUUM tubes, *GERMANIUM diodes


    أضف إلى المفضلة
  9. 9
    Academic Journal
    Structural and electrical characteristics of high-k Tb2O3 and Tb2TiO5 charge trapping layers for nonvolatile memory applications.

    المؤلفون: Tung-Ming Pan1 tmpan@mail.cgu.edu.tw, Fa-Hsyang Chen1, Ji-Shing Jung1

    المصدر: Journal of Applied Physics. Oct2010, Vol. 108 Issue 7, p074501. 5p. 6 Graphs.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *PHOTOELECTRON spectroscopy, *MOLECULAR spectroscopy, *PARTICLES (Nuclear physics), *PHOTOELECTRICITY


    أضف إلى المفضلة
  10. 10
    Academic Journal
    Conductive path formation in glasses of phase change memory.

    المؤلفون: Simon, M.1 mark.simon@utoledo.edu, Nardone, M.1, Karpov, V. G.1, Karpov, I. V.2

    المصدر: Journal of Applied Physics. Oct2010, Vol. 108 Issue 6, p064514. 9p. 1 Color Photograph, 7 Diagrams, 1 Chart, 5 Graphs.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *PHASE transitions, *CHALCOGENIDES, *INFORMATION resources management, *PERCOLATION


    أضف إلى المفضلة
  11. 11
    Academic Journal
    Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers.

    المؤلفون: Xu, X. G.1, Zhang, D. L.1, Li, X. Q.1, Bao, J.1, Jiang, Y.1, Jalil, M. B. A.2

    المصدر: Journal of Applied Physics. Dec2009, Vol. 106 Issue 12, p123902-123906. 4p. 6 Graphs.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *METALLIC composites, *ELECTRIC resistance, *MAGNETIC fields, *MAGNETIC devices, *FERROMAGNETIC materials, *FERROMAGNETISM


    أضف إلى المفضلة
  12. 12
    Academic Journal
    Degradation mechanisms of organic ferroelectric field-effect transistors used as nonvolatile memory.

    المؤلفون: Ng, Tse Nga1, Russo, Beverly1, Arias, Ana Claudia1

    المصدر: Journal of Applied Physics. Nov2009, Vol. 106 Issue 9, p094504-1-094504-5. 5p. 6 Graphs.

    مصطلحات موضوعية: *ORGANIC field-effect transistors, *FERROELECTRIC RAM, *HYSTERESIS, *ELECTRIC breakdown, *DIELECTRIC devices


    أضف إلى المفضلة
  13. 13
    Academic Journal
    Analytical model for low-frequency noise in amorphous chalcogenide-based phase-change memory devices.

    المؤلفون: Betti Beneventi, G.1,2, Calderoni, A.1, Fantini, P.1, Larcher, L.2, Pavan, P.2

    المصدر: Journal of Applied Physics. Sep2009, Vol. 106 Issue 5, p054506-1-054506-8. 8p. 2 Diagrams, 11 Graphs.

    مصطلحات موضوعية: *CHALCOGENIDES, *FERROELECTRIC RAM, *PHASE transitions, *RELAXATION phenomena, *ELECTRIC noise, *SIGNAL-to-noise ratio


    أضف إلى المفضلة
  14. 14
    Academic Journal
    Physical concepts of memory device operation based on piezoacousto and pyroelectric properties of ferroelectric films.

    المؤلفون: Krieger, Ju. H.1

    المصدر: Journal of Applied Physics. Mar2009, Vol. 105 Issue 6, p061629-061235. 6p. 5 Diagrams, 3 Charts.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *PYROELECTRICITY, *FERROELECTRIC thin films, *RANDOM access memory, *POLARIZATION (Electricity)


    أضف إلى المفضلة
  15. 15
    Academic Journal
    Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices.

    المؤلفون: Sun, B.1, Liu, Y. X.1, Liu, L. F.1, Xu, N.1, Wang, Y.1, Liu, X. Y.1, Han, R. Q.1, Kang, J. F.1

    المصدر: Journal of Applied Physics. Mar2009, Vol. 105 Issue 6, p061630-061634. 4p. 1 Diagram, 7 Graphs.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *TRANSITION metal oxides, *THIN films, *ELECTRODES, *OXYGEN, *IONS, *TITANIUM nitride, *ZIRCONIUM oxide


    أضف إلى المفضلة
  16. 16
    Academic Journal
    An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O3 thin film capacitor using the switching transient current measurements.

    المؤلفون: Kim, Gun Hwan1, Lee, Hyun Ju1, Jiang, An Quan2, Park, Min Hyuk1, Hwang, Cheol Seong1

    المصدر: Journal of Applied Physics. Feb2009, Vol. 105 Issue 4, pN.PAG. 5p. 1 Diagram, 4 Graphs.

    مصطلحات موضوعية: *FERROELECTRIC thin films, *FERROELECTRIC RAM, *CAPACITORS, *ELECTRODIFFUSION, *HYSTERESIS loop, *LEAD alloys


    أضف إلى المفضلة
  17. 17
    Academic Journal
    Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices.

    المؤلفون: Kim, Yong-Mu1, Lee, Jang-Sik1

    المصدر: Journal of Applied Physics. Dec2008, Vol. 104 Issue 11, p114115. 6p. 7 Graphs.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *HAFNIUM oxide, *ELECTRIC fields, *THIN films, *X-ray diffraction, *ELECTRIC conductivity


    أضف إلى المفضلة
  18. 18
    Academic Journal
    Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application.

    المؤلفون: Liu, Qi1,2, Guan, Weihua1, Long, Shibing1, Liu, Ming1, Zhang, Sen1, Wang, Qin1, Chen, Junning2

    المصدر: Journal of Applied Physics. Dec2008, Vol. 104 Issue 11, p114514. 5p. 8 Graphs.

    مصطلحات موضوعية: *ZIRCONIUM oxide, *FERROELECTRIC RAM, *GOLD, *IONS, *HOPPING conduction


    أضف إلى المفضلة
  19. 19
    Academic Journal
    Electrical switching dynamics in circular and rectangular Ge2Sb2Te5 nanopillar phase change memory devices.

    المؤلفون: Ozatay, O.1, Stipe, B.1, Katine, J. A.1, Terris, B. D.1

    المصدر: Journal of Applied Physics. Oct2008, Vol. 104 Issue 8, p084507. 7p. 2 Diagrams, 6 Graphs.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *PHASE transitions, *ELECTRONIC pulse techniques, *ELECTRIC resistance, *INFORMATION retrieval


    أضف إلى المفضلة
  20. 20
    Academic Journal
    Electrical behavior of memory devices based on fluorene-containing organic thin films.

    المؤلفون: Dimitrakis, Panagiotis1, Normand, Pascal1, Tsoukalas, Dimitris2, Pearson, Christopher3, Ahn, Jin H.3, Mabrook, Mohammed F.3, Zeze, Dagou A.3, Petty, Michael C.3, Kamtekar, Kiran T.4, Wang, Changsheng4, Bryce, Martin R.4, Green, Mark5

    المصدر: Journal of Applied Physics. Aug2008, Vol. 104 Issue 4, p044510. 11p. 1 Diagram, 16 Graphs.

    مصطلحات موضوعية: *FERROELECTRIC RAM, *FLUORENE, *ORGANIC thin films, *NANOPARTICLES, *GOLD, *THIN films, *AMINES


    أضف إلى المفضلة
أدوات البحث: أحصل على تغذية RSS – أرسل هذا البحث بالبريد الإلكتروني – حفظ البحث – جدول التنبيهات: لا شيء