المؤلفون: Roopesh Singh, Shivam Verma

المصدر: IEEE Open Journal of Nanotechnology, Vol 6, Pp 27-34 (2025)

مصطلحات موضوعية: Fin field effect transistor (FinFET), ferroelectric field effect transistor (FeFET), magnetic tunnel junction (MTJ), junctionless-accumulation-mode (JAM), ferroelectric random-access memory (FeRAM), spin transfer torque (STT), Chemical technology, TP1-1185, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10845186/; https://doaj.org/toc/2644-1292

URL الوصول: https://doaj.org/article/d1addcab1886427f9660354310aeeb09

المؤلفون: Athle, Robin, Hill, Megan O., Irish, Austin, Chen, Huaiyu, Timm, Rainer, Kristensson, Elias, Wallentin, Jesper, Borg, Mattias

المصدر: ACS Applied Materials and Interfaces NanoLund: Centre for Nanoscience. 16(41)

مصطلحات موضوعية: BEOL compatibility, FeRAM, ferroelectric, hafnium oxide, thin films, Naturvetenskap, Fysik, Atom- och molekylfysik och optik, Natural Sciences, Physical Sciences, Atom and Molecular Physics and Optics

URL الوصول: https://lup.lub.lu.se/record/1a1aaf89-d33f-439b-a932-658d4ac31272
http://dx.doi.org/10.1021/acsami.4c10002

المؤلفون: Mohammad Adnaan, Sou-Chi Chang, Hai Li, Yu-Ching Liao, Ian A. Young, Azad Naeemi

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 107-115 (2024)

مصطلحات موضوعية: Ferroelectric memory, ferroelectric random access memory (FeRAM), hysteresis, memory circuit benchmarking, phase-field model, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10738514/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/ed3b0828f2af4993b5db0f2f6910f599

المؤلفون: Yadav, Gunjan, Ramírez, Lucía, Pérez, Barrett, Nick, Coignus, Jean, Vaxelaire, Nicolas, Grenouillet, Laurent, Rueff, Jean, Pascal, Ceolin, Denis

المساهمون: Service de physique de l'état condensé (SPEC - UMR3680), Institut Rayonnement Matière de Saclay (DRF) (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Etude des NanoStructures et Imagerie de Surface (LENSIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (DRF) (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), ANR-22-PEXD-0018,MicroElec,High throughput heterostructures elaboration and characterisation for microelectronic applications(2022), European Project: 101135656,Ferro4EdgeAI

المصدر: 2024 22nd Non-Volatile Memory Technology Symposium (NVMTS)
NVMTS 2024 - 22nd Non-Volatile Memory Technology Symposium
https://hal.science/hal-04891777
NVMTS 2024 - 22nd Non-Volatile Memory Technology Symposium, Oct 2024, Busan, South Korea
https://ieeexplore.ieee.org/document/10830905

مصطلحات موضوعية: HZO, HAXPES, FeRAM, Polarization, Oxygen vacancies, [PHYS]Physics [physics]

جغرافية الموضوع: Busan, South Korea

Relation: info:eu-repo/grantAgreement//101135656/EU/Scalable, Ferroelectric-based Accelerators for Energy Efficient Edge Artificial Intelligence/Ferro4EdgeAI

الاتاحة: https://hal.science/hal-04891777
https://hal.science/hal-04891777v1/document
https://hal.science/hal-04891777v1/file/Polarization-Dependent_Oxygen_Vacancy_Distribution_in_Ferroelectric_Hf0.5_Zr0.5_O2_Capacitors.pdf

المؤلفون: Li Chen, Chen Liu, Hock Koon Lee, Binni Varghese, Ronald Wing Fai Ip, Minghua Li, Zhan Jiang Quek, Yan Hong, Weijie Wang, Wendong Song, Huamao Lin, Yao Zhu

المصدر: Materials, Vol 17, Iss 3, p 627 (2024)

مصطلحات موضوعية: AlScN, ferroelectric, capacitor, FeRAM, selector-free memory array, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85

Relation: https://www.mdpi.com/1996-1944/17/3/627; https://doaj.org/toc/1996-1944; https://doaj.org/article/58a0a0e1fe74441aaef1bd343d92f168

الاتاحة: https://doi.org/10.3390/ma17030627
https://doaj.org/article/58a0a0e1fe74441aaef1bd343d92f168

المؤلفون: Laguerre, J., Bocquet, Marc, Billoint, O., Martin, S., Coignus, J., Carabasse, C., Magis, T., Dewolf, T., Andrieu, F., Grenouillet, L.

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), IEEE

المصدر: IMW 2023 - 2023 IEEE International Memory Workshop ; https://hal.science/hal-04130967 ; IMW 2023 - 2023 IEEE International Memory Workshop, IEEE, May 2023, Monterey (CA), United States. pp.1-4, ⟨10.1109/IMW56887.2023.10145972⟩

مصطلحات موضوعية: non-volatile memory FeRAM etched FeCAP compact model advanced technology nodes, non-volatile memory, FeRAM, etched FeCAP, compact model, advanced technology nodes, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Monterey (CA), United States

Relation: hal-04130967; https://hal.science/hal-04130967; https://hal.science/hal-04130967/document; https://hal.science/hal-04130967/file/IMW2023_JL.pdf

الاتاحة: https://hal.science/hal-04130967
https://hal.science/hal-04130967/document
https://hal.science/hal-04130967/file/IMW2023_JL.pdf
https://doi.org/10.1109/IMW56887.2023.10145972

المؤلفون: Naomi Yazaki, Ryosuke Motoyoshi, Shiyu Numata, Kazuaki Ohshima, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake, Masaharu Kobayashi, Shunpei Yamazaki

المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 467-472 (2023)

مصطلحات موضوعية: C-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO), 1T1C, FeRAM, single damascene, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10225501/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/130a499579cf486f97ff60e88658e798

المؤلفون: Ram, Mamidala Karthik, Dahlberg, Hannes, Wernersson, Lars Erik

المصدر: IEEE Electron Device Letters NanoLund: Centre for Nanoscience. 45(10):1827-1830

مصطلحات موضوعية: Capacitors, Cryogenic, Cryogenics, FeRAM, Ferroelectric, Non-volatile, Nucleation Limited Switching, Performance evaluation, Random access memory, Semiconductor device measurement, Switches, Switching Dynamics, Voltage measurement, Naturvetenskap, Fysik, Den kondenserade materiens fysik, Natural Sciences, Physical Sciences, Condensed Matter Physics

URL الوصول: https://lup.lub.lu.se/record/787a150e-e58d-41a3-aee2-90731adf6187
http://dx.doi.org/10.1109/LED.2024.3448378

المؤلفون: Noel, Jean-Philippe, Valea, Emanuele, Grenouillet, Laurent, Chapuis, Bastien, Fisher, Clément, Recoquillay, Arnaud, Giraud, Bastien

المساهمون: Laboratoire Fonctions Innovantes pour circuits Mixtes (LFIM), Université Grenoble Alpes (UGA)-Département Systèmes et Circuits Intégrés Numériques (DSCIN (CEA, LIST)), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département Composants Silicium (DCOS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Laboratoire Systèmes et Photonique pour le Monitoring (CEA, LIST) (LSPM (CEA, LIST)), Département d'instrumentation Numérique (CEA, LIST) (DIN (CEA, LIST)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, CYBERALPS, ANR-15-IDEX-0002,UGA,IDEX UGA(2015)

المصدر: VLSI SoC - 2023 IFIP/IEEE 31st International Conference on Very Large Scale Integration ; https://cea.hal.science/cea-04463300 ; VLSI SoC - 2023 IFIP/IEEE 31st International Conference on Very Large Scale Integration, Oct 2023, Dubai, United Arab Emirates. ⟨10.1109/VLSI-SoC57769.2023.10321864⟩ ; https://ieeexplore.ieee.org/document/10321864

مصطلحات موضوعية: signal processing, sensor, instrumentation, Serial Ferroelectric RAM (FeRAM), Electronic architecture, embedded system, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [INFO.INFO-TS]Computer Science [cs]/Signal and Image Processing

جغرافية الموضوع: Dubai, United Arab Emirates

الاتاحة: https://cea.hal.science/cea-04463300
https://cea.hal.science/cea-04463300v1/document
https://cea.hal.science/cea-04463300v1/file/JPNOEL_VLSISOC23.pdf
https://doi.org/10.1109/VLSI-SoC57769.2023.10321864

المؤلفون: Yung‐Fang Tan, Kai‐Chun Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, Wen‐Chung Chen, Yu‐Hsuan Yeh, Chung‐Wei Wu, Chao‐Cheng Lin, Simon M. Sze

المصدر: Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)

مصطلحات موضوعية: Boolean logic, computing in memory, FeFETs, ferroelectric random access memory (FeRAM), Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/75ad7ea120e049e78534b617a7080747

المؤلفون: Jun Okuno, Takafumi Kunihiro, Kenta Konishi, Monica Materano, Tarek Ali, Kati Kuehnel, Konrad Seidel, Thomas Mikolajick, Uwe Schroeder, Masanori Tsukamoto, Taku Umebayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 29-34 (2022)

مصطلحات موضوعية: Ferroelectric random-access memory, FeRAM, capacitor under bitline, CUB, hafnium oxide, zirconium oxide, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9621226/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/4381b49e3fa94cfc82b7bdd0a97bd89b

المؤلفون: Timofey V. Perevalov, Igor P. Prosvirin, Evgenii A. Suprun, Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder, Vladimir A. Gritsenko

المصدر: Journal of Science: Advanced Materials and Devices, Vol 6, Iss 4, Pp 595-600 (2021)

مصطلحات موضوعية: FeRAM, XPS, Oxygen vacancy, Electronic structure, HfZrO, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2468217921000642; https://doaj.org/toc/2468-2179

URL الوصول: https://doaj.org/article/0620fcd7a2354341b6e062c7f47dc50a

المؤلفون: Jan, A, Rembert, T, Taper, S, Symonowicz, J, Strkalj, N, Moon, T, Lee, YS, Bae, H, Lee, HJ, Choe, DH, Heo, J, MacManus-Driscoll, J, Monserrat, B, Di Martino, G

مصطلحات موضوعية: DF spectroscopy, fatigue, HZO ultra-thin FeRAM, oxygen vacancies, phase changes, Raman and PL, wake-up

وصف الملف: application/pdf; text/xml

Relation: https://doi.org/10.17863/CAM.91195; https://www.repository.cam.ac.uk/handle/1810/347231

الاتاحة: https://www.repository.cam.ac.uk/handle/1810/347231
https://doi.org/10.17863/CAM.94648

المؤلفون: Bo Peng, Donglin Zhang, Zhongqiang Wang, Jianguo Yang

المصدر: Micromachines; Volume 14; Issue 8; Pages: 1572

مصطلحات موضوعية: FeRAM, nondestructive readout, offset-canceled sense amplifier

وصف الملف: application/pdf

Relation: E：Engineering and Technology; https://dx.doi.org/10.3390/mi14081572

الاتاحة: https://doi.org/10.3390/mi14081572

المؤلفون: Jaewook Yoo, Hyeonjun Song, Hongseung Lee, Seongbin Lim, Soyeon Kim, Keun Heo, Hagyoul Bae

المصدر: Electronics; Volume 12; Issue 10; Pages: 2297

مصطلحات موضوعية: HZO, ferroelectric memory device, NVM, in-memory computing, neuromorphic, FTJ, Fe-diode, FeFET, FeRAM

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics12102297

الاتاحة: https://doi.org/10.3390/electronics12102297

المؤلفون: Francois, T., Coignus, J., Makosiej, A., Giraud, B., Carabasse, C., Barbot, J., Martin, S., Castellani, N., Magis, T., Grampeix, H., van Duijn, S., Mounet, C., Chiquet, P., Schroeder, U., Slesazeck, S., Mikolajick, T., Nowak, E., Bocquet, Marc, Barrett, N., Andrieu, F., Grenouillet, L.

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département Systèmes et Circuits Intégrés Numériques (DSCIN (CEA, LIST)), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), NaMLab gGmbH, Service de physique de l'état condensé (SPEC - UMR3680), Institut Rayonnement Matière de Saclay (DRF) (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-03596923 ; IEEE Transactions on Electron Devices, 2022, pp.1-7. ⟨10.1109/TED.2021.3138360⟩.

مصطلحات موضوعية: High Performance Operation and Solder Reflow Compatibility in BEOL-integrated 16kbit HfO2:Si-based 1T-1C FeRAM Arrays 16kbit array, ferroelectric random-access memory (FeRAM), 130-nm technology node, HfO2:Si, hafnium oxide, solder reflow, data retention, endurance, emerging memory, nonvolatile memory (NVM), ferroelectric memories, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: hal-03596923; https://hal.science/hal-03596923; https://hal.science/hal-03596923/document; https://hal.science/hal-03596923/file/Francois,%20TED2021,%20High%20Performance%20Operation%20and%20Solder%20Reflow%20Compatibility%20in%20BEOL-integrated%2016kbit%20HfO2Si-based%201T-1C%20FeRAM%20Arrays.pdf

الاتاحة: https://hal.science/hal-03596923
https://hal.science/hal-03596923/document
https://hal.science/hal-03596923/file/Francois,%20TED2021,%20High%20Performance%20Operation%20and%20Solder%20Reflow%20Compatibility%20in%20BEOL-integrated%2016kbit%20HfO2Si-based%201T-1C%20FeRAM%20Arrays.pdf
https://doi.org/10.1109/TED.2021.3138360

المؤلفون: Jae Hur, Yuan-Chun Luo, Zheng Wang, Sarah Lombardo, Asif Islam Khan, Shimeng Yu

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 168-174 (2021)

مصطلحات موضوعية: Cryogenic temperature, device reliability, ferroelectric, ferroelectric field-effect transistor (FeFET), ferroelectric random access memory (FeRAM), Hf0.5Zr0.5O2 (HZO), Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9627158/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/eaf1046bc0d94e6a985458b021b89d78

المؤلفون: Ravsher, Taras, Mulaosmanovic, Halid, Breyer, Evelyn T., Havel, Viktor, Mikolajick, Thomas, Slesazeck, Stefan

مصطلحات موضوعية: Ferro-Elektrik, Memristor, Speicher-Logik, Rechner mit Arbeitsspeicher, ferroelektrische Kondensatoren (FeCAP), ferroelektrische Tunnelübergang (FTJ), Ferroelektrischer Direktzugriffsspeicher (FeRAM), ferroelectrics, memristor, logic-in-memory, compute-in-memory, ferroelectric capacitors (FeCAP), ferroelectric tunnel junction (FTJ), Ferroelectric Random-Access Memory (FeRAM), info:eu-repo/classification/ddc/621.3, ddc:621.3

Relation: info:eu-repo/grantAgreement/European Commission/Horizon 2020/780302//Energy - Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2/3eFERRO

الاتاحة: https://tud.qucosa.de/id/qucosa%3A77006
https://tud.qucosa.de/api/qucosa%3A77006/attachment/ATT-0/

المؤلفون: Slesazeck, Stefan, Havel, Viktor, Breyer, Evelyn, Mulaosmanovic, Halid, Hoffmann, Michael, Max, Benjamin, Duenkel, Stefan, Mikolajick, Thomas

مصطلحات موضوعية: Ferroelektrischer Speicher, FeRAM, FeFET, FTJ, Ferroelectric Memory, FeRAM, FeFET, FTJ, info:eu-repo/classification/ddc/621.3, ddc:621.3

الاتاحة: https://tud.qucosa.de/id/qucosa%3A77685
https://tud.qucosa.de/api/qucosa%3A77685/attachment/ATT-0/

المؤلفون: Fengyuan Zhang (1424125), Hua Fan (495346), Bing Han (38992), Yudong Zhu (2869754), Xiong Deng (429533), David Edwards (5663), Amit Kumar (81180), Deyang Chen (1511182), Xingsen Gao (1424122), Zhen Fan (59888), Brian J. Rodriguez (1513639)

مصطلحات موضوعية: Biophysics, Medicine, Cell Biology, Molecular Biology, Neuroscience, Physiology, Biotechnology, Astronomical and Space Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, loading force, layer width, BiFeO 3, loading force increases, magnitude increases, nanometer range, force-induced changes, polarization switching-induced disp., Boosting Polarization Switching-Induced, injection currents, storage density, injection decreases, access memory, barrier height, force microscopy, FeRAM devices, Mechanical Force

Relation: https://figshare.com/articles/journal_contribution/Boosting_Polarization_Switching-Induced_Current_Injection_by_Mechanical_Force_in_Ferroelectric_Thin_Films/14678941

الاتاحة: https://doi.org/10.1021/acsami.1c04912.s001