المؤلفون: Fastow, R.

المصدر: Journal of Applied Physics. 9/15/1995, Vol. 78 Issue 6, p4222. 5p.

مصطلحات موضوعية: *PHOTODIODES, *ELECTRIC impedance

المؤلفون: Fastow, R., Goren, D., Nemirovsky, Y.

المصدر: Journal of Applied Physics. 10/1/1990, Vol. 68 Issue 7, p3405. 8p.

مصطلحات موضوعية: *SEMICONDUCTORS, *TRANSIENTS (Dynamics)

المؤلفون: Golan, A., Fastow, R., Eizenberg, M.

المصدر: Journal of Applied Physics. 2/15/1990, Vol. 67 Issue 4, p1940. 7p. 4 Black and White Photographs, 1 Diagram, 1 Chart, 7 Graphs.

مصطلحات موضوعية: *SEMICONDUCTOR wafers, *ELECTRONICS, *SILICON

المؤلفون: Fastow, R., Nemirovsky, Y.

المصدر: Journal of Applied Physics. 8/15/1989, Vol. 66 Issue 4, p1705. 6p. 1 Diagram, 2 Charts, 6 Graphs.

مصطلحات موضوعية: *MERCURY cadmium tellurides, *PHOTOCONDUCTIVE cells, *RECOMBINATION in semiconductors

المؤلفون: Fastow, R., Brener, R., Kalish, R., Eizenberg, M.

المصدر: Journal of Applied Physics. 4/15/1988, Vol. 63 Issue 8, p2586. 5p. 1 Chart, 2 Graphs.

مصطلحات موضوعية: *ION bombardment, *ALLOYS, *INTERFACES (Physical sciences)

المؤلفون: Fastow, R., Mayer, J. W.

المصدر: Journal of Applied Physics. 1/1/1987, Vol. 61 Issue 1, p175. 7p. 1 Black and White Photograph, 1 Diagram, 3 Charts, 5 Graphs.

مصطلحات موضوعية: *IRRADIATION, *METALS, *SILICON

المؤلفون: Brat, T., Eizenberg, M., Fastow, R., Palmstrom, C. J., Mayer, J. W.

المصدر: Journal of Applied Physics; 1/15/1985, Vol. 57 Issue 2, p264, 6p, 6 Black and White Photographs, 8 Graphs

مصطلحات موضوعية: PROTON beams, IRIDIUM, THIN films, SILICON crystals

المؤلفون: Wei, M., Banerjee, R., Zhang, L., Masad, A., Reidy, S., Ahn, J., Chao, H., Lim, C., Castro, T., Karpenko, O., Ru, M., Fastow, R., Brand, A., Guo, X., Gorman, J., McMahon, W.J., Woo, B.J., Fazio, A.

المصدر: 2007 IEEE Symposium on VLSI Technology

الاتاحة: http://dx.doi.org/10.1109/vlsit.2007.4339702
http://xplorestaging.ieee.org/ielx5/4339664/4339665/04339702.pdf?arnumber=4339702

المؤلفون: Nemirovsky, Y., Fastow, R., Meyassed, M., Unikovsky, A.

المصدر: AIP Conference Proceedings ; volume 235, page 1829-1839 ; ISSN 0094-243X

الاتاحة: http://dx.doi.org/10.1063/1.41060

المؤلفون: Fastow, R.

المصدر: Solid-State Electronics ; volume 35, issue 7, page 1025-1026 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/0038-1101(92)90338-d
https://api.elsevier.com/content/article/PII:003811019290338D?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:003811019290338D?httpAccept=text/plain

المؤلفون: Ophir-Arad, E., Fastow, R., Kalish, R.

المصدر: Applied Physics Letters ; volume 57, issue 20, page 2098-2100 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.103953
https://pubs.aip.org/aip/apl/article-pdf/57/20/2098/18479427/2098_1_online.pdf

المؤلفون: Bahir, G., Adar, R., Fastow, R.

المصدر: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1991, Vol. 9 Issue 2, p266-272, 7p

المؤلفون: Ben-Tzur, M., Fastow, R., Eizenberg, M., Rosenberg, J., Frenkel, M.

المصدر: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1990, Vol. 8 Issue 6, p4069-4073, 5p

المؤلفون: Fastow, R., Nemirovsky, Y.

المصدر: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1990, Vol. 8 Issue 2, p1245-1250, 6p

المؤلفون: Fastow, R., Brener, R., Eizenberg, M., Brat, T., Mayer, J. W.

المصدر: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1987, Vol. 5 Issue 2, p164-168, 5p

المؤلفون: Fastow, R., Ahmed, K., Haddad, S., Randolph, M., Huster, C., Hom, P.

المصدر: IEEE Electron Device Letters; Apr2000, Vol. 21 Issue 4, p184-186, 3p

المؤلفون: Hewett, C. A., Lac, S. S., Fastow, R., Mayer, J. W.

المصدر: Physica Status Solidi (a) ; volume 84, issue 1, page 49-54 ; ISSN 0031-8965 1521-396X

الاتاحة: http://dx.doi.org/10.1002/pssa.2210840106
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.2210840106
https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.2210840106

المؤلفون: Olowolafe, J. O., Fastow, R.

المصدر: MRS Proceedings ; volume 35 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-35-553
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400405051

المؤلفون: Palmstrom, C. J., Fastow, R.

المصدر: MRS Proceedings ; volume 13 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-13-715
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400275982

المؤلفون: Fastow, R. M., Leamy, H. J., Celler, G. K., Wong, Y. H., Doherty, C. J.

المصدر: MRS Proceedings ; volume 1 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-1-495
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400267602