المؤلفون: Faifer, V. N.

المصدر: AIP Conference Proceedings ; volume 788, page 254-258 ; ISSN 0094-243X

الاتاحة: http://dx.doi.org/10.1063/1.2062972

المؤلفون: Clarysse, T., Bogdanowicz, J., Goossens, J., Moussa, A., Rosseel, E., Vandervorst, Wilfried, Petersen, D., Lin, R., Nielsen, P., Hansen, O., Defranoux, C., Vertikov, A., Gostein, M., Bennett, N., Cowern, N., Faifer, V.

Relation: E-MRS Sprng Meeting Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices location:Strasbourg, France date:26-30 May 2008; https://lirias.kuleuven.be/handle/123456789/261550

الاتاحة: https://lirias.kuleuven.be/handle/123456789/261550

المؤلفون: Faifer, V. N., Schroder, D. K., Current, M. I., Clarysse, T., Timans, P. J., Zangerle, T., Vandervorst, W., Wong, T. M. H., Moussa, A., McCoy, S., Gelpey, J., Lerch, W., Paul, S., Bolze, D., Seiler, David G., Diebold, Alain C., McDonald, Robert, Garner, C. Michael, Herr, Dan, Khosla, Rajinder P., Secula, Erik M.

المصدر: AIP Conference Proceedings ; volume 931, page 246-250 ; ISSN 0094-243X

الاتاحة: http://dx.doi.org/10.1063/1.2799377

المؤلفون: Feng, A., Souchkov, V. V., Wong, T. M. H., Faifer, V. N., Current, M. I., Seiler, David G., Diebold, Alain C., McDonald, Robert, Garner, C. Michael, Herr, Dan, Khosla, Rajinder P., Secula, Erik M.

المصدر: AIP Conference Proceedings ; volume 931, page 255-260 ; ISSN 0094-243X

الاتاحة: http://dx.doi.org/10.1063/1.2799379

المؤلفون: Borland, J., Shishiguchi, S., Mineji, A., Krull, W., Jacobson, D., Tanjyo, M., Lerch, W., Paul, S., Gelpey, J., McCoy, S., Venturini, J., Current, M., Faifer, V., Hillard, R., Benjamin, M., Walker, T., Buczkowski, A., Zhiqiang Li, Chen, J.

المصدر: 2006 International Workshop on Junction Technology ; page 4-9

الاتاحة: http://dx.doi.org/10.1109/iwjt.2006.1669436

المؤلفون: Current, M. I., Faifer, V. N., Wong, T. M. H., Nguyen, T., Koo, A.

المصدر: AIP Conference Proceedings ; volume 866, page 582-585 ; ISSN 0094-243X

الاتاحة: http://dx.doi.org/10.1063/1.2401585

المؤلفون: Clarysse, T., Moussa, A., Zangerle, T., Schaus, F., Vandervorst, Wilfried, Faifer, V., Current, M.

Relation: Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures vol:26 issue:1 pages:420-424; https://lirias.kuleuven.be/handle/123456789/223395

الاتاحة: https://lirias.kuleuven.be/handle/123456789/223395

المؤلفون: Faifer, V. N., Current, M. I., Schroder, D. K.

المصدر: Applied Physics Letters ; volume 89, issue 15 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.2362596
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2362596/13176906/151123_1_online.pdf

المؤلفون: Lakhov, V. M., Mityukhlyaev, V. B., Pravdivtsev, A. E., Todua, P. A., Faifer, V. N.

المصدر: Measurement Techniques ; volume 43, issue 5, page 422-424 ; ISSN 0543-1972 1573-8906

الاتاحة: http://dx.doi.org/10.1007/bf02503657
http://link.springer.com/content/pdf/10.1007/BF02503657.pdf
http://link.springer.com/article/10.1007/BF02503657/fulltext.html
http://link.springer.com/content/pdf/10.1007/BF02503657

المؤلفون: Current, M., Faifer, V., Halim, J., Ohno, N.

المصدر: 2007 International Workshop on Junction Technology; 2007, p43-46, 4p

المؤلفون: Current, M. I., Faifer, V. N., Wong, T. M. H., Walecki, W., Nguyen, T.

المصدر: MRS Online Proceedings Library; 2006, Vol. 945 Issue 1, p1-6, 6p

المؤلفون: Faifer, V., Dyukov, V., Pravdivtsev, A., Skurida, D.

المصدر: ESSDERC '94: 24th European Solid State Device Research Conference; 1994, p601-604, 4p

المؤلفون: Faifer, V. N., Schroder, D. K., Current, M. I., Clarysse, T., Timans, P. J., Zangerle, T., Vandervorst, W., Wong, T. M. H., Moussa, A., McCoy, S., Gelpey, J., Lerch, W., Paul, S., Bolze, D., Halim, J.

المصدر: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Sep/Oct2007, Vol. 25 Issue 5, p1588-1592, 5p, 1 Diagram, 1 Chart, 5 Graphs

مصطلحات موضوعية: CHEMICAL vapor deposition, VAPOR-plating, METAL organic chemical vapor deposition, ELECTRONS, ELECTRODES

المؤلفون: Faifer, V. N., Current, M. I., Wong, T. M. H., Souchkov, V. V.

المصدر: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jan/Feb2006, Vol. 24 Issue 1, p414-420, 7p, 2 Diagrams, 7 Graphs

مصطلحات موضوعية: COMPLEMENTARY metal oxide semiconductors, SEMICONDUCTOR doping, DOPED semiconductors, SEMICONDUCTOR wafers, SEMICONDUCTORS

المؤلفون: Bogdankevich, O V, Davydov, V O, Kudeyarov, Yu A, Zverev, M M, Faĭfer, V N, Shustov, A V

المصدر: Soviet Journal of Quantum Electronics ; volume 18, issue 12, page 1572-1574 ; ISSN 0049-1748

الاتاحة: http://dx.doi.org/10.1070/qe1988v018n12abeh012763
http://stacks.iop.org/0049-1748/18/i=12/a=A17/pdf

المؤلفون: Bogdankevich, O V, Davydov, V O, Zverev, M M, Kudeyarov, Yu A, Faĭfer, V N

المصدر: Soviet Journal of Quantum Electronics ; volume 17, issue 5, page 695-696 ; ISSN 0049-1748

الاتاحة: http://dx.doi.org/10.1070/qe1987v017n05abeh009090
http://stacks.iop.org/0049-1748/17/i=5/a=A42/pdf