المؤلفون: Tang, Zhenxun^1,2,3 (AUTHOR), Liu, Linjie^1,2,3 (AUTHOR), Zhang, Jianyuan^1,2,3,4 (AUTHOR), Chen, Weijin^1,2,3,4 (AUTHOR) chenweijin@mail.sysu.edu.cn, Zheng, Yue^1,2,3 (AUTHOR) zhengy35@mail.sysu.edu.cn

المصدر: Journal of Applied Physics. 1/14/2025, Vol. 137 Issue 2, p1-10. 10p.

مصطلحات موضوعية: *FERROELECTRIC devices, *ARTIFICIAL intelligence, *INFORMATION networks, *NEURONS, *INFORMATION processing

المؤلفون: Cheng, Guoting¹ (AUTHOR), Feng, Philip X.-L.¹ (AUTHOR), Guo, Jing¹ (AUTHOR) guoj@ufl.edu

المصدر: Journal of Applied Physics. 10/21/2024, Vol. 136 Issue 15, p1-10. 10p.

مصطلحات موضوعية: *FLEXIBLE electronics, *FERROELECTRIC devices, *STOCHASTIC models, *TRANSISTORS, *VOLTAGE

المؤلفون: Cuesta-Lopez, J.¹ (AUTHOR) jcuesta@ugr.es, Ganeriwala, M. D.¹ (AUTHOR), Marin, E. G.¹ (AUTHOR), Toral-Lopez, A.² (AUTHOR), Pasadas, F.¹ (AUTHOR), Ruiz, F. G.¹ (AUTHOR), Godoy, A.¹ (AUTHOR)

المصدر: Journal of Applied Physics. 9/28/2024, Vol. 136 Issue 12, p1-9. 9p.

مصطلحات موضوعية: *FERROELECTRIC devices, *ARTIFICIAL neural networks, *IONIC mobility, *ION mobility, *ION migration & velocity

المؤلفون: Venkidu, L.^1,2 (AUTHOR), Raja, N.³ (AUTHOR), Venkidu, Vasundharadevi¹ (AUTHOR), Sundarakannan, B.¹ (AUTHOR) sundarakannan@msuniv.ac.in

المصدر: Journal of Applied Physics. 8/28/2024, Vol. 136 Issue 8, p1-16. 16p.

مصطلحات موضوعية: *FERROELECTRIC devices, *OXYGEN reduction, *SOLAR cells, *HYSTERESIS, *SYNCHROTRONS, *PHOTOVOLTAIC effect, *CHARGE carriers

المؤلفون: Zhang, Wen Di, Jiang, An Quan

المصدر: Journal of Applied Physics; 1/14/2025, Vol. 137 Issue 2, p1-6, 6p

مصطلحات موضوعية: RATE of nucleation, DISCONTINUOUS precipitation, FERROELECTRIC devices, HYSTERESIS loop, ELECTRIC fields

المؤلفون: Luo, S. S., Hu, S. W., Shan, D. L., Liu, Y. Y., Lei, C. H., Pan, K.

المصدر: Journal of Applied Physics; 1/7/2025, Vol. 137 Issue 1, p1-11, 11p

مصطلحات موضوعية: NANOFILMS, PIEZORESPONSE force microscopy, FERROELECTRIC devices, FERROELECTRIC materials, FERROELECTRICITY

المؤلفون: Songsong Zhou¹, Rappe, Andrew M.¹ rappe@sas.upenn.edu

المصدر: Proceedings of the National Academy of Sciences of the United States of America. 1/7/2025, Vol. 122 Issue 1, p1-6. 12p.

مصطلحات موضوعية: *FERROELECTRIC devices, *DISCONTINUOUS precipitation, *HAFNIUM oxide, *NUCLEATION, *SYMMETRY

المؤلفون: Han, Runhao^1,2 (AUTHOR), Hong, Peizhen³ (AUTHOR) hongpeizhen@nankai.edu.cn, Ning, Shuai⁴ (AUTHOR), Xu, Qiang¹ (AUTHOR), Bai, Mingkai^1,2 (AUTHOR), Zhou, Jing⁴ (AUTHOR), Li, Kaiyi^1,2 (AUTHOR), Liu, Fei¹ (AUTHOR), Shi, Feng⁵ (AUTHOR), Luo, Feng⁴ (AUTHOR), Huo, Zongliang^1,2,6 (AUTHOR)

المصدر: Journal of Applied Physics. 6/28/2023, Vol. 133 Issue 24, p1-24. 24p.

مصطلحات موضوعية: *FERROELECTRIC thin films, *FERROELECTRIC devices, *THIN films, *MANUFACTURING processes, *COMPLEMENTARY metal oxide semiconductors

المؤلفون: Luo, Cai-Qin¹ (AUTHOR), Pu, Hong-Jie¹ (AUTHOR), Kang, Chao-Yang¹ (AUTHOR), Jia, Cai-Hong¹ (AUTHOR), Zhang, Wei-Feng^1,2 (AUTHOR) wfzhang@henu.edu.cn

المصدر: Applied Physics Letters. 10/28/2024, Vol. 125 Issue 18, p1-6. 6p.

مصطلحات موضوعية: *FERROELECTRIC devices, *ELECTRON transport, *HAFNIUM oxide, *THIN films, *FERROELECTRICITY

المؤلفون: Xue, Yixin^1,2 (AUTHOR), Cui, Dongsheng^1,2 (AUTHOR), Kang, Mengyang^1,2 (AUTHOR), Wang, Yifei^1,2 (AUTHOR), Zhang, Hong^1,2 (AUTHOR), Yuan, Haidong¹ (AUTHOR), Gao, Xiangxiang¹ (AUTHOR), Su, Jie^1,2 (AUTHOR) sujie@xidian.edu.cn, Lin, Zhenhua^1,2 (AUTHOR), Miao, Jinshui³ (AUTHOR), Zhang, Jincheng^1,2 (AUTHOR), Hao, Yue^1,2 (AUTHOR), Chang, Jingjing^1,2 (AUTHOR) jjingchang@xidian.edu.cn

المصدر: Applied Physics Letters. 10/7/2024, Vol. 125 Issue 15, p1-7. 7p.

مصطلحات موضوعية: *ELECTRIC dipole moments, *FERROELECTRIC devices, *IONIC bonds, *ALLOYS, *WURTZITE

Alternate Title: Design and Multi-State Tunneling Characteristics of Perovskite Ferroelectric Ultrathin Films With Low-Driving Fields.

المؤلفون: 董言哲¹ dyz121025@163.com, 路晓艳¹ Luxy@hit.edu.cn

المصدر: Applied Mathematics & Mechanics (1000-0887). Oct2024, Vol. 45 Issue 10, p1320-1331. 12p.

مصطلحات موضوعية: *FERROELECTRIC thin films, *FERROELECTRIC devices, *LANDAU theory, *WKB approximation, *TUNNEL design & construction

المؤلفون: Dong Wang^1,2, Shenglan Hao¹ slhao@phy.ecnu.edu.cn, Brahim Dkhil³, Bobo Tian^1,2 bbtian@ee.ecnu.edu.cn, Chungang Duan^1,4

المصدر: Fundamental Research. Sep2024, Vol. 4 Issue 5, p1272-1291. 20p.

مصطلحات موضوعية: *ARTIFICIAL neural networks, *FERROELECTRIC devices, *FERROELECTRIC materials, *ARTIFICIAL intelligence, *IMAGE reconstruction

المؤلفون: Ju, Dongyeol, Park, Yongjin, Noh, Minseo, Koo, Minsuk, Kim, Sungjun

المصدر: Journal of Chemical Physics; 8/28/2024, Vol. 161 Issue 8, p1-12, 12p

مصطلحات موضوعية: DORSAL root ganglia, MEMRISTORS, BIOLOGICAL systems, NEUROPLASTICITY, FERROELECTRIC devices, NOCICEPTORS

المؤلفون: Li, Wenqi, Xia, Zhiliang, Fan, Dongyu, Fang, Yuxuan, Huo, Zongliang

المصدر: Journal of Applied Physics; 6/21/2024, Vol. 135 Issue 23, p1-6, 6p

مصطلحات موضوعية: AXIAL stresses, FERROELECTRIC materials, STRESS concentration, CAPACITORS, FERROELECTRIC devices, TUNGSTEN bronze

المؤلفون: Yu, Xing¹ (AUTHOR), Zhang, Xiwen² (AUTHOR) xwzhang05@seu.edu.cn, Ma, Liang^1,3 (AUTHOR), Wang, Jinlan^1,3 (AUTHOR) jlwang@seu.edu.cn

المصدر: Advanced Functional Materials. Aug2024, p1. 8p. 5 Illustrations.

مصطلحات موضوعية: *OHMIC contacts, *FERROELECTRIC devices, *ELECTRONIC modulation, *NONVOLATILE memory, *TUNNEL design & construction

المؤلفون: Peixi Zhang¹, Qiang Li¹ qiangli@ustb.edu.cn, Zhiguo Li¹, Xiaoming Shi², Haoyu Wang², Chuanrui Huo¹, Lihui Zhou³, Xiaojun Kuang⁴ kuangxj@glut.edu.cn, Kun Lin⁵, Yili Cao⁵, Jinxia Deng⁵, Chengyi Yu⁵, Xin Chen⁵, Jun Miao⁵, Xianran Xing⁵ xing@ustb.edu.cn

المصدر: Proceedings of the National Academy of Sciences of the United States of America. 6/18/2024, Vol. 121 Issue 25, p1-7. 24p.

مصطلحات موضوعية: *FERROELECTRICITY, *FERROELECTRIC devices, *DENSITY functional theory, *FERROELECTRIC crystals

المؤلفون: Wei, Wei^1,2 (AUTHOR), Zhao, Guoqing¹ (AUTHOR), Zhan, XuePeng¹ (AUTHOR), Zhang, Weiqiang¹ (AUTHOR), Sang, Pengpeng¹ (AUTHOR), Wang, Qianwen¹ (AUTHOR), Tai, Lu^1,2 (AUTHOR), Luo, Qing² (AUTHOR), Li, Yuan¹ (AUTHOR), Li, Can³ (AUTHOR), Chen, Jiezhi¹ (AUTHOR) chen.jiezhi@sdu.edu.cn

المصدر: Journal of Applied Physics. 4/21/2022, Vol. 131 Issue 15, p1-9. 9p.

مصطلحات موضوعية: *PHASE transitions, *FERROELECTRIC devices, *SWITCHING costs, *POLARIZATION (Electricity), *ELECTRIC fields

المؤلفون: Guo, Yangqin, Liu, Chang, Li, Xiangyu

المصدر: Journal of Applied Physics; 12/28/2023, Vol. 134 Issue 24, p1-10, 10p

مصطلحات موضوعية: FERROELECTRIC materials, STRAINS & stresses (Mechanics), FERROELECTRIC devices, FRACTURE toughness, MODEL theory, BRITTLENESS

المؤلفون: Ferreyra, C., Badillo, M., Sánchez, M. J., Acuautla, M., Noheda, B., Rubi, D.

المصدر: Frontiers in Materials; 2025, p1-10, 10p

مصطلحات موضوعية: CHEMICAL solution deposition, FERROELECTRIC devices, OXYGEN vacancy, SCHOTTKY barrier, MEMRISTORS

المؤلفون: Jiang, Shujuan, Wang, Yongwei, Zheng, Guangping

المصدر: Nanomaterials (2079-4991); Jan2025, Vol. 15 Issue 2, p109, 20p

مصطلحات موضوعية: FERROELECTRIC materials, FERROELECTRIC crystals, NONLINEAR optics, FERROELECTRICITY, CURIE temperature, FERROELECTRIC devices