المؤلفون: S. Satham Hussain, Hossein Rashmonlou, F. Mofidnakhaei, R. Jahir Hussain, Sankar Sahoo, Said Broumi

المصدر: Neutrosophic Sets and Systems, Vol 51, Pp 269-294 (2022)

مصطلحات موضوعية: quadripartitioned neutrosophic graph, quadripartitioned neutrosophic graph structure, 𝜙-permutation, 𝜙-complement, operations, Mathematics, QA1-939, Electronic computers. Computer science, QA75.5-76.95

وصف الملف: electronic resource

Relation: http://fs.unm.edu/NSS/QuadripartitionedNeutrosophicGraph17.pdf; https://doaj.org/toc/2331-6055; https://doaj.org/toc/2331-608X

URL الوصول: https://doaj.org/article/07c68921e1764eecb50a9d6da134b49e

المؤلفون: A. V. Mudryi, V. D. Zhivulko, F. Mofidnakhaei, G. D. Ivlev, M. V. Yakushev, R. W. Martin, A. V. Dvurechenskii, V. A. Zinovyev, Zh. V. Smagina, P. A. Kuchinskaja

المصدر: Приборы и методы измерений, Vol 0, Iss 1, Pp 38-45 (2015)

مصطلحات موضوعية: silicon p-n structures, current-voltage characteristics, dislocations, electroluminescence, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: https://pimi.bntu.by/jour/article/view/59; https://doaj.org/toc/2220-9506; https://doaj.org/toc/2414-0473

URL الوصول: https://doaj.org/article/393468440e0a41e78c0dfb41243de808

المؤلفون: M. Ghasabian, F. Mofidnakhaei, Saeed Talebi

المصدر: Kerntechnik. 86:202-209

مصطلحات موضوعية: Nuclear and High Energy Physics, Radiation, Materials science, 020401 chemical engineering, Nuclear Energy and Engineering, 020209 energy, Nuclear engineering, 0202 electrical engineering, electronic engineering, information engineering, General Materials Science, 02 engineering and technology, 0204 chemical engineering, Safety, Risk, Reliability and Quality, Rod

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::767c024f17a65289f3d3ffc6ba5ee9c5
https://doi.org/10.1515/kern-2021-0004

المؤلفون: Kishore Kumar P.K, null Manshath A., Hossein Rashmanlou, Morteza Taheri, Yahya Talebi, null F. Mofidnakhaei

المصدر: International Journal of Fuzzy Mathematical Archive. 19:25-35

مصطلحات موضوعية: General Engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b8f5c568736daa708bcaea6732554707
https://doi.org/10.22457/ijfma.v19n1a02224

المؤلفون: Zahra Sadri Irani, Hossein Rashmanlou, null F. Mofidnakhaei

المصدر: International Journal of Fuzzy Mathematical Archive. 19:49-60

مصطلحات موضوعية: General Engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::eeb81b060c5924f62c16adef7c30f7c8
https://doi.org/10.22457/ijfma.v19n1a04226

المؤلفون: Hussain, S. Satham, Rashmonlou, Hossein, F, Mofidnakhaei, Hussain, R Jahir, Sahoo, Sankar, Broumi, Said

المصدر: Neutrosophic Sets and Systems

وصف الملف: application/pdf

Relation: https://digitalrepository.unm.edu/nss_journal/vol51/iss1/17; https://digitalrepository.unm.edu/cgi/viewcontent.cgi?article=2130&context=nss_journal

الاتاحة: https://digitalrepository.unm.edu/nss_journal/vol51/iss1/17
https://digitalrepository.unm.edu/cgi/viewcontent.cgi?article=2130&context=nss_journal

المؤلفون: A. V. Mudryi, V. D. Zhivulko, F. Mofidnakhaei, G. D. Ivlev, M. V. Yakushev, R. W. Martin, A. V. Dvurechenskii, V. A. Zinovyev, Zh. V. Smagina, P. A. Kuchinskaja, А. В. Мудрый, В. Д. Живулько, Ф. Мофиднахаи, Г. Д. Ивлев, М. В. Якушев, Р. В. Мартин, А. В. Двуреченский, В. А. Зиновьев, Ж. В. Смагина, П. А. Кучинская

المصدر: Devices and Methods of Measurements; № 1 (2014); 38-45 ; Приборы и методы измерений; № 1 (2014); 38-45 ; 2414-0473 ; 2220-9506 ; undefined

مصطلحات موضوعية: электролюминесценци, current-voltage characteristics, dislocations, electroluminescence, вольт-амперные характеристики, дислокации

وصف الملف: application/pdf

Relation: https://pimi.bntu.by/jour/article/view/59/59; Герасименко, Н.Н. Кремний – материал наноэлектроники / Н.Н. Герасименко, Ю.Н. Пархоменко. – M. : Техносфера, 2007. – 352 с.; Green, M.A. Efficient silicon light-emitting diodes / M.A. Green [et al.] // Nature. – 2001. – Vol. 412. – P. 805–808.; Emel’yanov, A.M. Silicon light-emitting diodes with strong near-band-edge luminescence / A.M. Emel’yanov, N.A. Sobolev // Semiconductors. – 2008. – Vol. 42, Is. 3. – P. 329–333.; Ng, W.L. An efficient room-temperature siliconbased light-emitting diode / W.L. Ng [et. al.] // Nature. – 2001. – Vol. 410. – P. 192 – 194.; Trupke, Th. Very efficient light emission from bulk crystalline silicon // Th. Trupke [et al.] // Appl. Phys. Lett. – 2003. – Vol. 82, Is. 18. – P. 2996–2998.; Kveder, V. Silicon light-emitting diodes based on dislocation-related luminescence / V. Kveder [et al.] // Phys. Stat. Sol. (a). – 2005. – Vol. 202, № 5. – P. 901–910.; Sveinbjörnsson, E.Ő. Room temperature electroluminescence from dislocationrich silicon / E.Ő. Sveinbjörnsson, J. Weber // Appl. Phys. Lett. – 1996. – Vol. 69, № 18. – P. 2686–2688.; Emel’yanov, A.M. Silicon LEDs emiting in the band-to-band transition region: Effects of temperature and current strength / A.M. Emel’yanov, N.A. Sobolev, E.I. Shek // Physics of Solid State. – 2004. – Vol. 46, Is. 1. – P. 40–44.; Davies, G. The optical properties of luminescence centers in silicon / G. Davies // Physics Reports. – 1989. – Vol. 176, № 3–4. – P. 83–188.; Päsler, R. Dispersion-related description of temperature dependencies of band gaps in semiconductors / R. Päsler // Phys. Rev. B. – 2002. – Vol. 66. – P. 085201-1–085201-18.; Bresler, M.S. Electroluminescence efficiency of silicon diodes / M. Bresler, O. Gusev [et. al] // Physics of Solid State. – 2004. – Vol. 46, Is. 1. – P. 5–9.; Emel’yanov, A.M. The mechanism of radiative recombination in the region of interband transitions in single crystal silicon / A.M. Emel’yanov // Technical Physics Letters. – 2004. – Vol. 30, Is. 11. – P. 964–966.; Drozdov, N.A. Recombination radiation on dislocations in silicon / N.A. Drozdov, A.A. Patrin, V.D. Tkachev // JETP Lett. – 1976. – Vol. 23. – P. 597–599.; Kveder, V.V. Dislocation-related electroluminescence at room temperature in plastically deformed silicon / V.V. Kveder [et al.] // Phys. Rev. B. – 1995. – Vol. 51, № 16. – P. 10520–10526.; Sauer, R. Dislocation-related photoluminescence in silicon / R. Sauer [et al.] // Appl. Phys. A. – 1985. – Vol. 36. – P. 1–13.; Luckert, F. Excitation power and temperature dependence of excitons in CuInSe2 / F. Luckert [et al.] // J. Appl. Phys. – 2012. – Vol. 111. – P. 093507-1–093507-8.; https://pimi.bntu.by/jour/article/view/59; undefined

الاتاحة: https://pimi.bntu.by/jour/article/view/59

المؤلفون: F. Khastehdel Fumani, F. Mofidnakhaei, Javad Vahedi, Saeed Mahdavifar

المصدر: Phase Transitions. 91:1256-1267

مصطلحات موضوعية: Quantum phase transition, Physics, Quantum discord, Condensed matter physics, Context (language use), Quantum entanglement, 01 natural sciences, 010305 fluids & plasmas, Transverse magnetic field, 0103 physical sciences, General Materials Science, 010306 general physics, Anisotropy, Instrumentation, Quantum, Spin-½

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a4bc8db950bbcf4933bc5a038a823fc8
https://doi.org/10.1080/01411594.2018.1527916

المؤلفون: C. Mohammadizadeh, N. Refahati, F. Mofidnakhaei

المصدر: Research Journal of Environmental and Earth Sciences. 6:466-468

مصطلحات موضوعية: Materials science, Nanostructure, business.industry, General Arts and Humanities, Physics::Optics, Substrate (electronics), Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Quantum dot, Nano, Radiative transfer, Optoelectronics, Quantum efficiency, Spontaneous emission, Luminescence, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::caede134ef2b107b53e05e5ceef1ce92
https://doi.org/10.19026/rjees.6.5258