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1Academic Journal
المؤلفون: Knauer, A., Kolbe, T., Hagedorn, S., Hoepfner, J., Guttmann, M., Cho, H.K., Rass, J., Ruschel, J., Einfeldt, S., Kneissl, M., Weyers, M.
مصطلحات موضوعية: Aluminum gallium nitride, Annealing, Gallium alloys, III-V semiconductors, Lattice mismatch, Light emitting diodes, Metallorganic vapor phase epitaxy, Quantum efficiency, Semiconductor alloys, Semiconductor quantum wells
Time: 530
وصف الملف: application/pdf
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2Academic Journal
المؤلفون: Cho, Hyun Kyong, Kang, J. H., Sulmoni, Luca, Kunkel, K., Rass, Jens, Susilo, Norman, Wernicke, Tim, Einfeldt, S., Kneissl, Markus
مصطلحات موضوعية: 530 Physik, light emitting diode, plasma etch, ohmic contact, low resistance n-contact, high Al mole fraction n-AlGaN, operating voltage
وصف الملف: application/pdf
Relation: https://depositonce.tu-berlin.de/handle/11303/16377; http://dx.doi.org/10.14279/depositonce-15153
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3Academic Journal
المؤلفون: Cho, H K, Mogilatenko, A, Susilo, N, Ostermay, I, Seifert, S, Wernicke, T, Kneissl, M, Einfeldt, S
المصدر: Semiconductor Science and Technology ; volume 37, issue 10, page 105016 ; ISSN 0268-1242 1361-6641
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4Academic Journal
المؤلفون: Glaab, J., Ruschel, J., Lobo Ploch, N., Cho, H. K., Mehnke, F., Sulmoni, L., Guttmann, M., Wernicke, T., Weyers, M., Einfeldt, S., Kneissl, M.
المساهمون: Bundesministerium für Bildung und Forschung, Deutsche Forschungsgemeinschaft
المصدر: Journal of Applied Physics ; volume 131, issue 1 ; ISSN 0021-8979 1089-7550
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5Academic Journal
المؤلفون: Weßler, CF, Weiland, M, Wiesner‐Reinhold, M, Schreiner, M, Einfeldt, S, Neugart, S
المصدر: Lebensmittelchemie ; volume 78, issue S3 ; ISSN 0937-1478 1521-3811
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6Academic Journal
المؤلفون: Barabash, R I, Ice, G E, Liu, W, Roder, C, Figge, S, Einfeldt, S, Hommel, D, Katona, T M, Speck, J S, DenBaars, S P, Davis, R F
المصدر: Physica Status Solidi B-Basic Solid State Physics. 243(7)
وصف الملف: application/pdf
URL الوصول: https://escholarship.org/uc/item/9236x8vt
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7Academic Journal
المؤلفون: Piva F., Grigoletto M., Brescancin R., De Santi C., Buffolo M., Ruschel J., Glaab J., Hauer Vidal D., Guttmann M., Rass J., Einfeldt S., Susilo N., Wernicke T., Kneissl M., Meneghesso G., Zanoni E., Meneghini M.
المساهمون: Piva, F., Grigoletto, M., Brescancin, R., De Santi, C., Buffolo, M., Ruschel, J., Glaab, J., Hauer Vidal, D., Guttmann, M., Rass, J., Einfeldt, S., Susilo, N., Wernicke, T., Kneissl, M., Meneghesso, G., Zanoni, E., Meneghini, M.
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000973333200008; volume:122; issue:15; firstpage:151108; journal:APPLIED PHYSICS LETTERS; https://hdl.handle.net/11577/3477947; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85152953302; https://pubs.aip.org/aip/apl/article/122/15/151108/2878603/Impact-of-Mg-doping-on-the-performance-and
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8Academic Journal
المؤلفون: Cho, H.K., Kang, J.H., Sulmoni, L., Kunkel, K., Rass, J., Susilo, N., Wernicke, T., Einfeldt, S., Kneissl, M.
مصطلحات موضوعية: high Almole fraction n-AlGaN, light emitting diode, low resistance n-contact, ohmic contact, operating voltage, plasma etch
Time: 530
وصف الملف: application/pdf
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9Academic Journal
المؤلفون: Netzel, C., Hoffmann, V., Einfeldt, S., Weyers, M.
مصطلحات موضوعية: Konferenzschrift, charge carrier diffusion, Gallium nitride, MOVPE growth, photoluminescence
Time: 670
وصف الملف: application/pdf
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10Academic Journal
المؤلفون: Amano, H., Collazo, R., Santi, C.D., Einfeldt, S., Funato, M., Glaab, J., Hagedorn, S., Hirano, A., Hirayama, H., Ishii, R., Kashima, Y., Kawakami, Y., Kirste, R., Kneissl, M., Martin, R., Mehnke, F., Meneghini, M., Ougazzaden, A., Parbrook, P.J., Rajan, S., Reddy, P., Römer, F., Ruschel, J., Sarkar, B., Scholz, F., Schowalter, L.J., Shields, P., Sitar, Z., Sulmoni, L., Wang, T., Wernicke, T., Weyers, M., Witzigmann, B., Wu, Y.-R., Wunderer, T., Zhang, Y.
وصف الملف: text
Relation: https://eprints.whiterose.ac.uk/166405/1/Amano_2020_J._Phys._D__Appl._Phys._53_503001.pdf; Amano, H., Collazo, R., Santi, C.D. et al. (33 more authors) (2020) The 2020 UV emitter roadmap. Journal of Physics D: Applied Physics, 53 (50). 503001. ISSN 0022-3727
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11Academic Journal
المؤلفون: Cho, H K, Kang, J H, Sulmoni, L, Kunkel, K, Rass, J, Susilo, N, Wernicke, T, Einfeldt, S, Kneissl, M
المصدر: Semiconductor Science and Technology ; volume 35, issue 9, page 095019 ; ISSN 0268-1242 1361-6641
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12Conference
المؤلفون: Meneghini, M, Piva, F, De Santi, C, Trivellin, N, Buffolo, M, Roccato, N, Brescancin, R, Grigoletto, M, Fiorimonte, D, Einfeldt, S, Glaab, J, Ruschel, J, Susilo, N, Wernicke, T, Kneissl, M, Meneghesso, G, Zanoni, E
المساهمون: Meneghini, M, Piva, F, De Santi, C, Trivellin, N, Buffolo, M, Roccato, N, Brescancin, R, Grigoletto, M, Fiorimonte, D, Einfeldt, S, Glaab, J, Ruschel, J, Susilo, N, Wernicke, T, Kneissl, M, Meneghesso, G, Zanoni, E
مصطلحات موضوعية: UV LED, degradation, reliability
Relation: info:eu-repo/semantics/altIdentifier/isbn/9781510648739; info:eu-repo/semantics/altIdentifier/isbn/9781510648746; info:eu-repo/semantics/altIdentifier/wos/WOS:000836321400010; ispartofbook:Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII; SPIE OPTO, 2022; volume:12001; firstpage:43; serie:PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING; https://hdl.handle.net/11577/3455440; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85131222710
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13Academic Journal
المؤلفون: Piva, F., Grigoletto, M., Brescancin, R., De Santi, C., Buffolo, M., Ruschel, J., Glaab, J., Hauer Vidal, D., Guttmann, M., Rass, J., Einfeldt, S., Susilo, N., Wernicke, T., Kneissl, M., Meneghesso, G., Zanoni, E., Meneghini, M.
المصدر: Applied Physics Letters; 4/10/2023, Vol. 122 Issue 15, p1-5, 5p
مصطلحات موضوعية: QUANTUM wells, POINT defects, LIGHT emitting diodes, EPITAXY, GALLIUM alloys
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14Academic Journal
المؤلفون: Ruschel, J., Glaab, J., Brendel, M., Rass, J., Stölmacker, C., Lobo-Ploch, N., Kolbe, T., Wernicke, T., Mehnke, F., Enslin, J., Einfeldt, S., Weyers, M., Kneissl, M.
المصدر: Journal of Applied Physics; 2018, Vol. 124 Issue 8, pN.PAG-N.PAG, 7p, 1 Diagram, 11 Graphs
مصطلحات موضوعية: LIGHT emitting diodes, ELECTRO-optical effects, MAGNETIC control, ELECTROLUMINESCENT devices, ELECTRIC field effects
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15Academic Journal
المؤلفون: Amano H., Collazo R., De Santi C., Einfeldt S., Funato M., Glaab J., Hagedorn S., Hirano A., Hirayama H., Ishii R., Kashima Y., Kawakami Y., Kirste R., Kneissl M., Martin R., Mehnke F., Meneghini M., Ougazzaden A., Parbrook P. J., Rajan S., Reddy P., Romer F., Ruschel J., Sarkar B., Scholz F., Schowalter L. J., Shields P., Sitar Z., Sulmoni L., Wang T., Wernicke T., Weyers M., Witzigmann B., Wu Y. -R., Wunderer T., Zhang Y.
المساهمون: Amano, H., Collazo, R., De Santi, C., Einfeldt, S., Funato, M., Glaab, J., Hagedorn, S., Hirano, A., Hirayama, H., Ishii, R., Kashima, Y., Kawakami, Y., Kirste, R., Kneissl, M., Martin, R., Mehnke, F., Meneghini, M., Ougazzaden, A., Parbrook, P. J., Rajan, S., Reddy, P., Romer, F., Ruschel, J., Sarkar, B., Scholz, F., Schowalter, L. J., Shields, P., Sitar, Z., Sulmoni, L., Wang, T., Wernicke, T., Weyers, M., Witzigmann, B., Wu, Y. -R., Wunderer, T., Zhang, Y.
مصطلحات موضوعية: AlGaN, InGaN, light emitting diode, ultraviolet, UV-LED
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000573488200001; volume:53; issue:50; firstpage:503001; journal:JOURNAL OF PHYSICS D. APPLIED PHYSICS; http://hdl.handle.net/11577/3365213; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85091661098
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16Conference
المؤلفون: Monti, D., Meneghini, M., De Santi, C., DA RUOS, SILVIA, Meneghesso, G., Zanoni, E., Glaab, J., Rass, J., Einfeldt, S., Mehnke, F., Enslin, J., Wernicke, T., Kneissl, M.
المساهمون: Monti, D., Krames, Michael R., Meneghini, M., De Santi, C., DA RUOS, Silvia, Meneghesso, G., Zanoni, E., Glaab, J., Rass, J., Einfeldt, S., Mehnke, F., Enslin, J., Wernicke, T., Kneissl, M.
مصطلحات موضوعية: AlGaN, defect migration, degradation, light-emitting diode, UV-B, Electronic, Optical and Magnetic Material, Condensed Matter Physic, Applied Mathematic, Electrical and Electronic Engineering
Relation: info:eu-repo/semantics/altIdentifier/isbn/9781510615939; info:eu-repo/semantics/altIdentifier/wos/WOS:000452797000005; ispartofbook:Proceedings of SPIE - The International Society for Optical Engineering; Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII 2018; volume:10554; firstpage:35; journal:PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING; alleditors:Krames, Michael R.; http://hdl.handle.net/11577/3276913; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85047836736; http://spie.org/x1848.xml
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17Academic Journal
المؤلفون: Monti D., De Santi C., DA RUOS, SARA, PIVA, FRANCESCO, Glaab J., Rass J., Einfeldt S., Mehnke F., Enslin J., Wernicke T., Kneissl M., Meneghesso G., Zanoni E., Meneghini M.
المساهمون: Monti, D., De Santi, C., DA RUOS, Sara, Piva, Francesco, Glaab, J., Rass, J., Einfeldt, S., Mehnke, F., Enslin, J., Wernicke, T., Kneissl, M., Meneghesso, G., Zanoni, E., Meneghini, M.
مصطلحات موضوعية: AlGaN, degradation, diffusion processe, light-emitting diodes (LEDs), ultraviolet (UV) sources
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000477697400022; volume:66; issue:8; firstpage:3387; lastpage:3392; numberofpages:6; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; http://hdl.handle.net/11577/3309206; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85069899059; https://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=16
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18Academic Journal
المؤلفون: Schwarz, Uli, Schuck, P., Mason, M., Grober, R., Roskowsky, A., Einfeldt, S., Davis, R.
مصطلحات موضوعية: 530 Physik, ddc:530
وصف الملف: application/pdf
Relation: https://epub.uni-regensburg.de/2607/1/PhysRevB.67.045321.pdf; Schwarz, Uli, Schuck, P., Mason, M., Grober, R., Roskowsky, A., Einfeldt, S. und Davis, R. (2003) Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC. Physical Review B 67, S. 45321.
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19Report
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20Report