المؤلفون: Qaeed, Motahher. A., Mindil, A., Eid, Alharthi A.

المصدر: International Journal of Membrane Science and Technology; Vol. 10 No. 3 (2023): Continuous publication; 3388-3396 ; 2410-1869

مصطلحات موضوعية: P-GaN, Hall Effect, p-n junction, Magnesium, FESEM, Ideality Factor and Series Resistance

وصف الملف: application/pdf

Relation: https://www.cosmosscholars.com/phms/index.php/ijmst/article/view/3367/2239; https://www.cosmosscholars.com/phms/index.php/ijmst/article/view/3367

الاتاحة: https://www.cosmosscholars.com/phms/index.php/ijmst/article/view/3367
https://doi.org/10.15379/ijmst.v10i3.3367

المؤلفون: Qaeed, Motahher A., Hendi, Abdulmajeed, Obaid, Ahmed S., Thahe, Asad A., Osman, Abdalghaffar M., Ismail, A., Mindil, A., Eid, Alharthi A., Aqlan, Faisal, Osman, Nadir M. A., AL-Farga, Ammar, Al-Maaqar, Saleh M., Saif, Ala’eddin A.

المصدر: Scientific Reports ; volume 13, issue 1 ; ISSN 2045-2322

الاتاحة: http://dx.doi.org/10.1038/s41598-023-31221-7
https://www.nature.com/articles/s41598-023-31221-7.pdf
https://www.nature.com/articles/s41598-023-31221-7