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1Academic JournalIncreasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulation
المؤلفون: Tikhomirov, V G, Gudkov, A G, Agasieva, S V, Dynaiev, D D, Popov, M K, Chizhikov, S V
المصدر: Journal of Physics: Conference Series ; volume 1410, issue 1, page 012191 ; ISSN 1742-6588 1742-6596