يعرض 1 - 20 نتائج من 77 نتيجة بحث عن '"Duan, XR"', وقت الاستعلام: 0.59s تنقيح النتائج
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    Academic Journal
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    Academic Journal
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    Academic Journal
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    Academic Journal
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    Academic Journal
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    Academic Journal
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    Academic Journal
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    Academic Journal
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    Academic Journal
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    Academic Journal
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    Conference

    المؤلفون: Wang, YG, Shi, K, Jia, GS, Xu, MZ, Tan, CH, Duan, XR

    المساهمون: Wang, YG (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China.

    المصدر: SCI

    Relation: 2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS.; 1061526; http://hdl.handle.net/20.500.11897/293748; WOS:000227342201013

  17. 17
    Academic Journal
  18. 18
    Conference

    المؤلفون: Xu, MZ, Tan, CH, Chen, H, Duan, XR

    المساهمون: Xu, MZ (reprint author), Peking Univ, Dept Comp Sci & Technol, Beijing 100871, Peoples R China., Peking Univ, Dept Comp Sci & Technol, Beijing 100871, Peoples R China.

    المصدر: SCI

    مصطلحات موضوعية: SILICON, MODELS

    Relation: SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS.; 1062516; http://hdl.handle.net/20.500.11897/293965; WOS:000174745900217

  19. 19
    Conference

    المؤلفون: Mu, FC, Xu, MZ, Tan, CH, Duan, XR

    المساهمون: Mu, FC (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China.

    المصدر: SCI

    مصطلحات موضوعية: ACCELERATION, STRESS

    Relation: SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS.; 1062523; http://hdl.handle.net/20.500.11897/293972; WOS:000174745900236

  20. 20
    Conference

    المؤلفون: Mu, FC, Xu, MZ, Tan, CH, Duan, XR

    المساهمون: Mu, FC (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China., Peking Univ, Inst Microelect, Beijing 100871, Peoples R China.

    المصدر: EI ; SCI

    مصطلحات موضوعية: DEVICE DEGRADATION, CHANNEL MOSFETS, MODEL, TRANSISTORS, DAMAGE

    Relation: MICROELECTRONICS RELIABILITY.2001/11/1,41(1909-1913).; 771950; http://hdl.handle.net/20.500.11897/152062; WOS:000172356800021