المؤلفون: Soohyung Park (1325910), Thorsten Schultz (4330594), Dongguen Shin (2879045), Niklas Mutz (1511944), Areej Aljarb (4356247), Hee Seong Kang (11262148), Chul-Ho Lee (127684), Lain-Jong Li (1344654), Xiaomin Xu (1448977), Vincent Tung (4528429), Emil J. W. List-Kratochvil (3664411), Sylke Blumstengel (1354353), Patrick Amsalem (1796827), Norbert Koch (168547)

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Biotechnology, Cancer, Space Science, Physical Sciences not elsewhere classified, Information Systems not elsewhere classified, charge injection barriers, monolayer MoS 2, band gap renormalization, screening, 2 D semiconductors, Φ sub, electron, dielectric, substrate, Substrate Dielectric Screening, interface, Schottky-Mott rule, 2 D semiconductor MoS 2, MoS 2 gap states, vacuum level alignment, energy level alignment mechanisms, 4.5 eV

Relation: https://figshare.com/articles/journal_contribution/The_Schottky_Mott_Rule_Expanded_for_Two-Dimensional_Semiconductors_Influence_of_Substrate_Dielectric_Screening/15152197

الاتاحة: https://doi.org/10.1021/acsnano.1c04825.s001