المؤلفون: Do, Van Nam, Dollfus, Philippe, Nguyen, Van Lien

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

URL الوصول: http://arxiv.org/abs/cond-mat/0601517

المؤلفون: Ngo, Van-Chinh, Nguyen, Thi-Kim-Quyen, Pham, Nguyen-Huu-Hanh, Pham, Tu-Huynh, Phan, Thi-Kim-Loan, Do, Van-Nam, Vu, Thanh-Tra

المساهمون: National Foundation for Science and Technology Development

المصدر: Physica B: Condensed Matter ; volume 670, page 415390 ; ISSN 0921-4526

الاتاحة: http://dx.doi.org/10.1016/j.physb.2023.415390
https://api.elsevier.com/content/article/PII:S0921452623007573?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0921452623007573?httpAccept=text/plain

المؤلفون: Do, Van-Nam

المصدر: Advances in Natural Sciences: Nanoscience and Nanotechnology ; volume 5, issue 3, page 033001 ; ISSN 2043-6262

الاتاحة: http://dx.doi.org/10.1088/2043-6262/5/3/033001
https://iopscience.iop.org/article/10.1088/2043-6262/5/3/033001/pdf
https://iopscience.iop.org/article/10.1088/2043-6262/5/3/033001

المؤلفون: Do, Van Nam, Pham, Thanh Huy

المصدر: Advances in Natural Sciences: Nanoscience and Nanotechnology ; volume 1, issue 3, page 033001 ; ISSN 2043-6262

الاتاحة: http://dx.doi.org/10.1088/2043-6254/1/3/033001
https://iopscience.iop.org/article/10.1088/2043-6254/1/3/033001
https://iopscience.iop.org/article/10.1088/2043-6254/1/3/033001/pdf

المؤلفون: Ho, Sy-Ta, Le, Hoang Anh, Nguyen, Van Duy, Do, Van-Nam

المصدر: The European Physical Journal B ; volume 93, issue 10 ; ISSN 1434-6028 1434-6036

الاتاحة: http://dx.doi.org/10.1140/epjb/e2020-10328-6
https://link.springer.com/content/pdf/10.1140/epjb/e2020-10328-6.pdf
https://link.springer.com/article/10.1140/epjb/e2020-10328-6/fulltext.html

المؤلفون: Dollfus, Philippe, Nguyen, Viet Hung, Do, Van Nam, Bournel, Arnaud

المصدر: 2010 14th International Workshop on Computational Electronics ; page 1-6

الاتاحة: http://dx.doi.org/10.1109/iwce.2010.5677935
http://xplorestaging.ieee.org/ielx5/5676247/5677911/05677935.pdf?arnumber=5677935

المؤلفون: Do, Van-Nam, Dollfus, P., Nguyen, V. L.

المصدر: AIP Conference Proceedings ; volume 922, page 325-328 ; ISSN 0094-243X

الاتاحة: http://dx.doi.org/10.1063/1.2759693

المؤلفون: Querlioz, Damien, Dollfus, Philippe, Do, Van-Nam, Bournel, Arnaud, Nguyen, Van Lien

المصدر: Journal of Computational Electronics ; volume 5, issue 4, page 443-446 ; ISSN 1569-8025 1572-8137

الاتاحة: http://dx.doi.org/10.1007/s10825-006-0044-3
https://link.springer.com/content/pdf/10.1007/s10825-006-0044-3.pdf
https://link.springer.com/article/10.1007/s10825-006-0044-3/fulltext.html
http://link.springer.com/content/pdf/10.1007/s10825-006-0044-3

المؤلفون: Université Paris Sud, Do, Van-Nam, Nguyen, Viet-Hung, et al.

المصدر: Journal of Applied Physics, Vol. 104, no.6, p. 063708 (2008)

مصطلحات الفهرس: General Physics and Astronomy, info:eu-repo/semantics/article

URL: http://hdl.handle.net/2078/269108

المؤلفون: Nguyen, Viet Hung, Alarcón, Alfonso, Berrada, Salim, Do, Van Nam, Saint-Martin, Jérôme, Querlioz, Damien, Bournel, Arnaud, Dollfus, Philippe

المصدر: Journal of Physics D: Applied Physics; 2014, Vol. 47 Issue 9, p094007-094016, 10p

مصطلحات موضوعية: GRAPHENE, CHARGE carrier mobility, ELECTRIC admittance, FIELD-effect transistors, BAND gaps