المؤلفون: TDI, Inc., Silver Spring, MD 20904, USA ( host institution ), Mastro, M.A. ( author ), Tsvetkov, D. ( author ), Soukhoveev, V. ( author ), Usikov, A. ( author ), Dmitriev, V. ( author ), Luo, B. ( author ), Ren, F. ( author ), Baik, K.H. ( author ), Pearton, S.J. ( author )

مصطلحات موضوعية: GaN, HEMT, HVPE, HFET, RF

وصف الملف: Pages 179-182

Relation: Solid State Electronics; S0038-1101(03)00107-2; SSE; 3473; http://ufdc.ufl.edu/LS00509698/00001

الاتاحة: https://doi.org/10.1016/S0038-1101(03)00107-2
http://ufdc.ufl.edu/LS00509698/00001

المؤلفون: TDI, Inc., Silver Spring, MD 20904, USA ( host institution ), Mastro, M.A. ( author ), Tsvetkov, D. ( author ), Soukhoveev, V. ( author ), Usikov, A. ( author ), Dmitriev, V. ( author ), Luo, B. ( author ), Ren, F. ( author ), Baik, K.H. ( author ), Pearton, S.J. ( author )

مصطلحات موضوعية: HVPE, Nitrite HEMT, 2-DEG profile, Gate-Lag

وصف الملف: Pages 1075-1079

Relation: Solid State Electronics; S0038-1101(02)00473-2; SSE; 3386; http://ufdc.ufl.edu/LS00509667/00001

الاتاحة: https://doi.org/10.1016/S0038-1101(02)00473-2
http://ufdc.ufl.edu/LS00509667/00001

المؤلفون: Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433-7322, USA ( host institution ), Gillespie, J.K. ( author ), Fitch, R.C. ( author ), Moser, N. ( author ), Jenkins, T. ( author ), Sewell, J. ( author ), Via, D. ( author ), Crespo, A. ( author ), Dabiran, A.M. ( author ), Chow, P.P. ( author ), Osinsky, A. ( author ), Mastro, M.A. ( author ), Tsvetkov, D. ( author ), Soukhoveev, V. ( author ), Usikov, A. ( author ), Dmitriev, V. ( author ), Luo, B. ( author ), Pearton, S.J. ( author ), Ren, F. ( author )

وصف الملف: Pages 1859-1862

Relation: Solid State Electronics; S0038-1101(03)00140-0; SSE; 3490; http://ufdc.ufl.edu/LS00509684/00001

الاتاحة: https://doi.org/10.1016/S0038-1101(03)00140-0
http://ufdc.ufl.edu/LS00509684/00001

المؤلفون: Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA ( host institution ), Johnson, J.W ( author ), Han, J ( author ), Baca, A.G ( author ), Briggs, R.D ( author ), Shul, R.J ( author ), Wendt, J.R ( author ), Monier, C ( author ), Ren, F ( author ), Luo, B ( author ), Chu, S.N.G ( author ), Tsvetkov, D ( author ), Dmitriev, V ( author ), Pearton, S.J ( author )

مصطلحات موضوعية: GaN, AlGaN, AlN, SiC, HEMT, AFM, TEM, Mobility

وصف الملف: Pages 513-523

Relation: Solid State Electronics; S0038-1101(01)00284-2; SSE; 2936; http://ufdc.ufl.edu/LS00509538/00001

الاتاحة: https://doi.org/10.1016/S0038-1101(01)00284-2
http://ufdc.ufl.edu/LS00509538/00001