المؤلفون: Shang Yu Tsai, Po‐Hsien Tseng, Chun Chi Chen, Cheng‐Ming Huang, Hung‐Wei Yen, Yi‐Sheng Chen, Kun‐Lin Lin, Ranming Niu, Yu‐Sheng Lai, Fu‐Hsiang Ko

المصدر: Advanced Materials Interfaces, Vol 11, Iss 36, Pp n/a-n/a (2024)

مصطلحات موضوعية: atom probe tomography, block of phonon penetration, boron interstitial‐formed boundaries, heavily boron‐doped silicon layer, thermoelectricity, Physics, QC1-999, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-7350

URL الوصول: https://doaj.org/article/d3efc12db150407e8caf02ff9af5bebb

المؤلفون: Е.С. Арзікулов, М. Раджабова, Сюе Цуй, Лю Тенг, С.Н. Сраєв, Н. Маматкулов, Ш.Дж. Гувондіков, Василь О. Пеленович, Б. Янг

المصدر: East European Journal of Physics, Iss 4 (2024)

مصطلحات موضوعية: Doped silicon, I–V characteristic, Negative differential conductivity, Low dimensional objects, Zinc nanoclusters, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://periodicals.karazin.ua/eejp/article/view/24603; https://doaj.org/toc/2312-4334; https://doaj.org/toc/2312-4539

URL الوصول: https://doaj.org/article/11039db37dee4f6e8bd86233806acda4

المؤلفون: Rizky Kurniawan, Andriayani Andriayani, Saharman Gea, Hadi Kurniawan

المصدر: JIF (Jurnal Ilmu Fisika), Vol 16, Iss 2 (2024)

مصطلحات موضوعية: rice husk, silica, silicon, cobalt-doped silicon, magnetoelectric, Physics, QC1-999

وصف الملف: electronic resource

Relation: http://jif.fmipa.unand.ac.id/index.php/jif/article/view/613; https://doaj.org/toc/1979-4657; https://doaj.org/toc/2614-7386

URL الوصول: https://doaj.org/article/4ebb1e00f3e34b01adc0823655745e4a

المؤلفون: Xueyan Dong, Caixia Dong, Yaoqiang Huo, Lin Cheng, Zhaofeng Yang, Jucai Yang

المصدر: Next Nanotechnology, Vol 6, Iss , Pp 100094- (2024)

مصطلحات موضوعية: Ground state structure of Pr-doped silicon clusters, Structural evolution patterns, Relative stability, Hole-electron excitation, Simulated photoelectron spectroscopy, Technology

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S294982952400055X; https://doaj.org/toc/2949-8295

URL الوصول: https://doaj.org/article/1f97bd9cd2734e42a60e06505ce588cf

المؤلفون: Tanzim Afdol, Md. Omar Faruque, Rabiul Al Mahmud, Rakibul Hasan Sagor, Asrafuzzaman Khan Nahin, Md. Abu Abdullah Aumi, K.M. Sazid Hasan, Sadman Sazid, Najm Mogalli Nasser Nasser

المصدر: Sensing and Bio-Sensing Research, Vol 40, Iss , Pp 100563- (2023)

مصطلحات موضوعية: Surface plasmon, Plasmonics, Hexagonal ring resonator, Metal insulator metal (MIM) waveguide, Silicon insulator silicon (Si-I-Si) waveguide, Doped silicon, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2214180423000156; https://doaj.org/toc/2214-1804

URL الوصول: https://doaj.org/article/080d7a2bcb3441bb8add4a294e5c74ca

المؤلفون: Michael E. Hoenk, April D. Jewell, Gillian Kyne, John Hennessy, Todd Jones, Charles Shapiro, Nathan Bush, Shouleh Nikzad, David Morris, Katherine Lawrie, Jesper Skottfelt

المصدر: Sensors, Vol 23, Iss 24, p 9857 (2023)

مصطلحات موضوعية: CMOS image sensors, delta-doped CCD, radiation damage, stability, image sensor, delta-doped silicon, Chemical technology, TP1-1185

وصف الملف: electronic resource

Relation: https://www.mdpi.com/1424-8220/23/24/9857; https://doaj.org/toc/1424-8220

URL الوصول: https://doaj.org/article/e3d54c54ebac4d1fa97b8414b874f33f

المؤلفون: Nicolò D'Anna, Dario Ferreira Sanchez, Guy Matmon, Jamie Bragg, Procopios C. Constantinou, Taylor J.Z. Stock, Sarah Fearn, Steven R. Schofield, Neil J. Curson, Marek Bartkowiak, Y. Soh, Daniel Grolimund, Simon Gerber, Gabriel Aeppli

المصدر: Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)

مصطلحات موضوعية: doped silicon devices, non‐destructive sub‐surface imaging, X‐ray fluorescence, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/4c5c4e033fa84dad9f3b4d2c476d593f

المؤلفون: Sreyash Sarkar, Ahmed A. Elsayed, Yasser M. Sabry, Frédéric Marty, Jérémie Drévillon, Xiaoyi Liu, Zhongzhu Liang, Elodie Richalot, Philippe Basset, Elyes Nefzaoui, Tarik Bourouina

المصدر: Advanced Photonics Research, Vol 4, Iss 2, Pp n/a-n/a (2023)

مصطلحات موضوعية: conical nanostructurations, highly doped silicon, mid-infrared metamaterials, perfect light absorbers, ultrablack silicon, ultrabroadband absorbers, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2699-9293

URL الوصول: https://doaj.org/article/f24308d18efc4040ab7238b0c47a7227

المؤلفون: Peh, Katharina, Flötotto, Aaron, Lauer, Kevin, Schulze, Dirk, Bratek, Dominik, Krischok, Stefan

مصطلحات موضوعية: article, ScholarlyArticle, ddc:530, boron-doped silicon -- calibration line -- dopant concentration -- low-temperature photoluminescence

وصف الملف: 5 Seiten

Relation: Physica status solidi -- Physica status solidi / B -- 10.1002/(ISSN)1521-3951 -- 1521-3951 -- http://uri.gbv.de/document/gvk:ppn:271600764 -- 1481096-7 -- http://www.bibliothek.uni-regensburg.de/ezeit/?1481096 -- https://onlinelibrary.wiley.com/journal/15213951; https://doi.org/10.1002/pssb.202300300; http://uri.gbv.de/document/gvk:ppn:1852478861

الاتاحة: https://doi.org/10.1002/pssb.202300300
https://www.db-thueringen.de/receive/dbt_mods_00063491
https://www.db-thueringen.de/servlets/MCRFileNodeServlet/dbt_derivate_00065664/1521-3951_260_2023_2300300.pdf
http://uri.gbv.de/document/gvk:ppn:1852478861

المؤلفون: Villeneuve-Faure, Christina, Boumaarouf, Abdelhaq, Shah, Vishal, Gammon, Peter, Lüders, Ulrike, Coq Germanicus, Rosine

المساهمون: Diélectriques Solides et Fiabilité (LAPLACE-DSF), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT), Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Dept. of Electronics, Politecnico di Torino = Polytechnic of Turin (Polito), University of Warwick Coventry

المصدر: ISSN: 1996-1944 ; Materials ; https://hal.science/hal-04187713 ; Materials, 2023, 16 (15), pp.5401. ⟨10.3390/ma16155401⟩.

مصطلحات موضوعية: local oxidation, atomic force microscopy, C-AFM, doping, successive AFM characterizations, doped silicon carbide, MOSFET, [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]

الاتاحة: https://hal.science/hal-04187713
https://hal.science/hal-04187713v1/document
https://hal.science/hal-04187713v1/file/materials-16-05401.pdf
https://doi.org/10.3390/ma16155401

المؤلفون: Yuanjiang Dong, Chang Liu, Fei Li, Huacheng Jin, Baoqiang Li, Fei Ding, Yijun Yang, Zongxian Yang, Fangli Yuan

مصطلحات موضوعية: Medicine, Neuroscience, Physiology, Immunology, Developmental Biology, Mental Health, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, violent volume expansion, uv – vis, single step without, raised carrier concentration, notably narrower bandgap, experimental results showed, better cycle stability, alleviated volume expansion, accelerated electron transfer, ray photoelectron spectroscopy, initial coulombic efficiency, flow rate increased, 4 , 3 , frequency thermal plasma, enhanced electrochemical performances, si without doping, 2 , n – si, doped silicon powders

Relation: https://figshare.com/articles/journal_contribution/Highly_Conductive_Ultrafine_N_Doped_Silicon_Powders_Prepared_by_High-Frequency_Thermal_Plasma_and_Their_Application_as_Anodes_for_Lithium-Ion_Batteries/24796512

الاتاحة: https://doi.org/10.1021/acsaelm.3c01376.s001
https://figshare.com/articles/journal_contribution/Highly_Conductive_Ultrafine_N_Doped_Silicon_Powders_Prepared_by_High-Frequency_Thermal_Plasma_and_Their_Application_as_Anodes_for_Lithium-Ion_Batteries/24796512

المؤلفون: Hiroki Yoshikawa, Taiki Ueshima, Hiroshi Sugimoto, Jingchao Xu, Minoru Mizuhata, Minoru Fujii

مصطلحات موضوعية: Biophysics, Medicine, Neuroscience, Biotechnology, Ecology, Plant Biology, Computational Biology, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, electrodes depend strongly, doped silicon nanoparticles, ∼ 3300 mah, doped si nanoparticles, ∼ 7 nm, initial capacity increases, based negative electrode, doped si nps, negative electrode, ∼ 97, 5 nm, electrode made, si nps, sized boron, phosphorus co, p co, methanol solutions, ion batteries, coulombic efficiency, conductive additives

Relation: https://figshare.com/articles/journal_contribution/Single-Nanometer-Sized_Boron_and_Phosphorus_Co-Doped_Silicon_Nanoparticles_for_Negative_Electrode_of_Lithium-Ion_Batteries/24787038

الاتاحة: https://doi.org/10.1021/acsanm.3c04824.s001
https://figshare.com/articles/journal_contribution/Single-Nanometer-Sized_Boron_and_Phosphorus_Co-Doped_Silicon_Nanoparticles_for_Negative_Electrode_of_Lithium-Ion_Batteries/24787038

المؤلفون: Isabelle P. Gordon (14320782), Wei Xu (28953), Sophia Randak (14320785), T. Richard Jow (1964434), Nicholas P. Stadie (1475125)

مصطلحات موضوعية: Medicine, Ecology, Developmental Biology, Inorganic Chemistry, Chemical Sciences not elsewhere classified, without great alteration, explore direct solid, opposite effect occurs, higher capacity retention, silicon powders relevant, known lattice contraction, silicon starting materials, ion batteries phosphorus, ion batteries, silicon lattice, stabilizing effect, higher angles, doped materials, silicon nanoparticles, ion half, doped silicon, crystal lattice, wide range, varying particle, term cycling, temperature decomposition, successful incorporation, state routes, reflection shifts, ray diffraction

Relation: https://figshare.com/articles/journal_contribution/Stabilizing_Effects_of_Phosphorus-Doped_Silicon_Nanoparticle_Anodes_in_Lithium-Ion_Batteries/21806256

الاتاحة: https://doi.org/10.1021/acs.chemmater.2c02983.s001

المؤلفون: D'Anna, Nicolò, Ferreira Sanchez, Dario, Matmon, Guy, Bragg, Jamie, Constantinou, Procopios C, Stock, Taylor JZ, Fearn, Sarah, Schofield, Steven R, Curson, Neil J, Bartkowiak, Marek, Soh, Y, Grolimund, Daniel, Gerber, Simon, Aeppli, Gabriel

المصدر: Advanced Electronic Materials (2023) (In press).

مصطلحات موضوعية: doped silicon devices, non-destructive sub-surface imaging, X-ray fluorescence

وصف الملف: application/pdf

Relation: https://discovery.ucl.ac.uk/id/eprint/10167842/1/Non%20Destructive%20X%20Ray%20Imaging%20of%20Patterned%20Delta%20Layer%20Devices%20in%20Silicon.pdf; https://discovery.ucl.ac.uk/id/eprint/10167842/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10167842/1/Non%20Destructive%20X%20Ray%20Imaging%20of%20Patterned%20Delta%20Layer%20Devices%20in%20Silicon.pdf
https://discovery.ucl.ac.uk/id/eprint/10167842/

المؤلفون: Hernández, Víctor, Vázquez, Federico

المصدر: Revista Mexicana de Física; Vol. 69 No. 1 Jan-Feb (2023): Revista Mexicana de Física; 011702 1–8 ; Revista Mexicana de Física; Vol. 69 Núm. 1 Jan-Feb (2023): Revista Mexicana de Física; 011702 1–8 ; 2683-2224 ; 0035-001X

مصطلحات موضوعية: doped silicon films, inhomogeneous doping, low/high particle injection regime, irreversible thermodynamics, Shokley-Read-Hall recombination, películas de silicio dopado, dopamiento inhomogeneo, régimen de inyección bajo/alto, termodinámica irreversible, recombinaci´ón Shokley-ReadHall

وصف الملف: application/pdf

Relation: https://rmf.smf.mx/ojs/index.php/rmf/article/view/6601/6661; https://rmf.smf.mx/ojs/index.php/rmf/article/view/6601

الاتاحة: https://rmf.smf.mx/ojs/index.php/rmf/article/view/6601
https://doi.org/10.31349/RevMexFis.69.011702

المؤلفون: Thi Hong Tam Ngo, Minh Nguyet Pham, Nguyen Trong Nghia Dinh

المصدر: Dong Thap University Journal of Science; No. 33 (2018): Part B - Natural Sciences; 72-76 ; Tạp chí Khoa học Đại học Đồng Tháp; Số 33 (2018): Phần B - Khoa học Tự nhiên; 72-76 ; 2815-567X ; 0866-7675

مصطلحات موضوعية: Silicon cluster, DFT method, geometry structure, arsenic doped silicon cluster, binding energy, Cluster Si, phương pháp DFT, cấu trúc hình học, cluster Silic pha tạp Asen, năng lượng liên kết

وصف الملف: application/pdf

Relation: https://dthujs.vn/index.php/dthujs/article/view/624/565; https://dthujs.vn/index.php/dthujs/article/view/624

الاتاحة: https://dthujs.vn/index.php/dthujs/article/view/624
https://doi.org/10.52714/dthu.33.8.2018.610

المؤلفون: Adilbek Sayt-Muratovich Kulumbetov

المصدر: Eurasian Journal of Physics,Chemistry and Mathematics; Vol. 25 (2023): EJPCM; 40-45 ; 2795-7667

مصطلحات موضوعية: atomic force microscopy, silicon, nickel-doped silicon

وصف الملف: application/pdf

Relation: https://geniusjournals.org/index.php/ejpcm/article/view/5486/4608; https://geniusjournals.org/index.php/ejpcm/article/view/5486

الاتاحة: https://geniusjournals.org/index.php/ejpcm/article/view/5486

المؤلفون: Makhmudov Sh.A, Mirzarayimov Zh.Z, Mirzarayimova F.Z, Mamadalieva G.K

المصدر: Eurasian Research Bulletin ; Vol. 16 (2023): ERB; 156-160 ; 2795-7675

مصطلحات موضوعية: thermal and radiation defects, neutron-doped silicon

وصف الملف: application/pdf

Relation: https://geniusjournals.org/index.php/erb/article/view/3206/2724; https://geniusjournals.org/index.php/erb/article/view/3206

الاتاحة: https://geniusjournals.org/index.php/erb/article/view/3206

المؤلفون: Sarah Shafaay, Sherif Mohamed, Mohamed Swillam

المصدر: Sensors, Vol 23, Iss 22, p 9220 (2023)

مصطلحات موضوعية: coupled-ring resonators, plasmonic mode, mid-infrared spectral range, doped silicon, optical sensors, Chemical technology, TP1-1185

وصف الملف: electronic resource

Relation: https://www.mdpi.com/1424-8220/23/22/9220; https://doaj.org/toc/1424-8220

URL الوصول: https://doaj.org/article/9ab6b59186e5427ea9ab74fac1d55bad

المؤلفون: Lin Zhang, Zhen Cui

المصدر: Frontiers in Materials, Vol 9 (2022)

مصطلحات موضوعية: metal-doped silicon carbide, magnetism, transition metal, hybridization orbitals, work function, Technology

وصف الملف: electronic resource

Relation: https://www.frontiersin.org/articles/10.3389/fmats.2022.956675/full; https://doaj.org/toc/2296-8016

URL الوصول: https://doaj.org/article/bec1c72aae10493087064a2f5557ddc0