المؤلفون: Ma BS, Wang WJ, Su FH, Den JJ, Jiang CP, Liu HL, Ding K, Zhao JH, Li GH, Ma, BS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

مصطلحات موضوعية: Gamnas, Raman Spectrum, Coupled Plamon-lo-phonon Mode, Hole Density, Gaas, Mocvd, (Ga, Films, Mn)As, Gan, 光电子学, carrier density, gallium arsenide, atomic layer deposition, photography--films, finite volume method, carrier concentration, carrier lifetime, carrier diffusion length, electron lifetime (semiconductors), carrier mean free path, mean free path, carrier, carrier mobility, mobility, carrier relaxation time, relaxation time, electrical conductivity transitions, semiconductor-metal transition, switching transitions

Relation: JOURNAL OF INFRARED AND MILLIMETER WAVES; Ma BS; Wang WJ; Su FH; Den JJ; Jiang CP; Liu HL; Ding K; Zhao JH; Li GH .Study on Raman spectra of GaMnAs ,JOURNAL OF INFRARED AND MILLIMETER WAVES,2006,25(3):207-212; http://ir.semi.ac.cn/handle/172111/10570

الاتاحة: http://ir.semi.ac.cn/handle/172111/10570