المؤلفون: Xia Xiao, Jiajun Guo, Zexin Gao, Dashuai Zhai, Ruxin Liu, Shuchao Qin, Mehran Khan Alam, Zhi Sun

المصدر: Materials Research Express, Vol 10, Iss 5, p 056301 (2023)

مصطلحات موضوعية: complementary resistive switching, single sandwich structure, egg albumen, interfacial Schottky emission, non-inert electrodes, Materials of engineering and construction. Mechanics of materials, TA401-492, Chemical technology, TP1-1185

Relation: https://doi.org/10.1088/2053-1591/acd67d; https://doaj.org/toc/2053-1591; https://doaj.org/article/9521125f2b5c414e9751128a9cbf9ce4

الاتاحة: https://doi.org/10.1088/2053-1591/acd67d
https://doaj.org/article/9521125f2b5c414e9751128a9cbf9ce4

المؤلفون: Saludes-Tapia, Mercedes, Gonzalez, Mireia Bargallo, Campabadal, Francesca, Suñé, Jordi, Miranda, Enrique

مصطلحات موضوعية: Resistive switching, Complementary resistive switching, Memristor

وصف الملف: application/pdf

Relation: Agencia Estatal de Investigación TEC2017-84321-C4-1-R; Agencia Estatal de Investigación TEC2017-84321-C4-4-R; Solid-state electronics; Vol. 194 (August 2022), art. 108312; https://ddd.uab.cat/record/265734; urn:10.1016/j.sse.2022.108312; urn:oai:ddd.uab.cat:265734; urn:scopus_id:85129612598; urn:articleid:18792405v194p108312; urn:oai:egreta.uab.cat:publications/9e7668f9-2316-4341-9bb3-570ddd5ffa0f

الاتاحة: https://ddd.uab.cat/record/265734

المؤلفون: Saludes-Tapia, Mercedes, Bargallo Gonzalez, Mireia, Campabadal, Francesca, Suñé, Jordi, Miranda, Enrique

مصطلحات موضوعية: Complementary Resistive Switching, Memristor, Memdiode, Snapback, Snapforward

وصف الملف: application/pdf

Relation: Ministerio de Ciencia e Innovación TEC2017-84321-C4-1-R; Ministerio de Ciencia e Innovación TEC2017-84321-C4-4-R; Solid-state electronics; Vol. 185 (November 2021), art. 108083; https://ddd.uab.cat/record/249235; urn:10.1016/j.sse.2021.108083; urn:oai:ddd.uab.cat:249235; urn:scopus_id:85109095097; urn:articleid:18792405v185p108083; urn:oai:egreta.uab.cat:publications/b07cc130-3a4c-4259-b642-8e7e57ef6f15

الاتاحة: https://ddd.uab.cat/record/249235

المؤلفون: Saurabh Srivastava (757699), Joseph Palathinkal Thomas (1716220), Xiaoyi Guan (9529324), Kam Tong Leung (164863)

مصطلحات موضوعية: Medicine, Cell Biology, Genetics, Molecular Biology, Neuroscience, Biotechnology, Evolutionary Biology, Ecology, Developmental Biology, Cancer, Chemical Sciences not elsewhere classified, sneak path constraints, oxide multilayer stacking, new heterojunction design, incorrect output reading, density memory integration, current retention properties, quality switching performance, complementary resistive switching, bipolar resistive switching, junction matrix remains, junction active matrix, bar memristor arrays, 2 , switching mechanism, x <, bar structure, bar cells, work demonstrates, voltage range

Relation: https://figshare.com/articles/journal_contribution/Induced_Complementary_Resistive_Switching_in_Forming-Free_TiO_sub_i_x_i_sub_TiO_sub_2_sub_TiO_sub_i_x_i_sub_Memristors/16547299

الاتاحة: https://doi.org/10.1021/acsami.1c09775.s001

المؤلفون: Hojeong Ryu, Junhyeok Choi, Sungjun Kim

المصدر: Metals; Volume 10; Issue 11; Pages: 1410

مصطلحات موضوعية: spike-timing-dependent plasticity, X-ray photoelectron spectroscopy, current sweep, complementary resistive-switching characteristics, high-κ dielectric

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/met10111410

الاتاحة: https://doi.org/10.3390/met10111410

المؤلفون: Chiao-Fan Chiu, Sreekanth Ginnaram, Asim Senapati, Yi-Pin Chen, Siddheswar Maikap

المصدر: Electronics; Volume 9; Issue 9; Pages: 1466

مصطلحات موضوعية: GdO x /Al 2 O 3, Cu filament, complementary resistive switching, hopping conduction, nonvolatile memory

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics9091466

الاتاحة: https://doi.org/10.3390/electronics9091466

المؤلفون: Junhyeok Choi, Sungjun Kim

المصدر: Coatings; Volume 10; Issue 8; Pages: 765

مصطلحات موضوعية: HfAlO x -based memristor, complementary resistive switching, microstructures, nonlinearity

وصف الملف: application/pdf

Relation: Thin Films; https://dx.doi.org/10.3390/coatings10080765

الاتاحة: https://doi.org/10.3390/coatings10080765

المؤلفون: Mengdi, Qian, Fina, Ignasi, Sánchez Barrera, Florencio, Fontcuberta, Josep

المساهمون: Ministerio de Ciencia, Innovación y Universidades (España), Generalitat de Catalunya

مصطلحات موضوعية: BaTiO3, Complementary resistive switching, Ferroelectric, Ferroelectric tunnel junctions

Relation: #PLACEHOLDER_PARENT_METADATA_VALUE#; info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496; MICIU/ICTI2017-2020/MAT2017-85232-R; info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2014-56063-C2-1-R; info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2015-73839-JIN; Postprint; http://dx.doi.org/10.1002/smll.201805042; Sí; Small 15(11): 1805042 (2019); http://hdl.handle.net/10261/181854; http://dx.doi.org/10.13039/501100002809

الاتاحة: http://hdl.handle.net/10261/181854
https://doi.org/10.13039/501100002809

المؤلفون: M. Saludes-Tapia, M.B. Gonzalez, F. Campabadal, J. Suñé, E. Miranda

المصدر: Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

مصطلحات موضوعية: Complementary resistive switching, Materials Chemistry, Resistive switching, Electrical and Electronic Engineering, Memristor, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::335a8cd5d9e87a3ea37db00ac3d7ed27
https://ddd.uab.cat/record/265734

المؤلفون: AMBROGIO, STEFANO, BALATTI, SIMONE, IELMINI, DANIELE, Gilmer, David C.

المساهمون: Ambrogio, Stefano, Balatti, Simone, Gilmer, David C., Ielmini, Daniele

مصطلحات موضوعية: Complementary resistive switching (CRS), crossbar array, ion migration, metal insulator transition, resistive switching, resistive-switching random access memory (RRAM), Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000338027200021; volume:61; issue:7; firstpage:2378; lastpage:2386; numberofpages:9; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; http://hdl.handle.net/11311/964756; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84903184045

الاتاحة: http://hdl.handle.net/11311/964756
https://doi.org/10.1109/TED.2014.2325531

المؤلفون: Jordi Suñé, Enrique Miranda, M. Saludes-Tapia, Mireia Bargallo Gonzalez, Francesca Campabadal

المصدر: Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

مصطلحات موضوعية: Computer science, 02 engineering and technology, Memristor, Memdiode, 01 natural sciences, law.invention, law, Robustness (computer science), 0103 physical sciences, Materials Chemistry, Electronic engineering, Electrical and Electronic Engineering, 010302 applied physics, Flexibility (engineering), Complementary Resistive Switching, SIMPLE (military communications protocol), Series (mathematics), Snapback, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Snapforward, Variety (universal algebra), Crossbar switch, 0210 nano-technology

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b79712859dd353fc84f40b3d39b28ad
https://doi.org/10.1016/j.sse.2021.108083

المؤلفون: Labalette, Marina

Thesis Advisors: Lyon, Université de Sherbrooke (Québec, Canada), Drouin, Dominique, Souifi, Abdelkader

مصطلحات موضوعية: Electronique, Microélectronique, Mémoires en microélectronique, Filière CMOS, Mémoires résistives OxRRAM, Mémoires resistives complémentaires - CRS, Intégration monolithique BEOL - back end of line, Caractérisation électrique en mode quasi statique - QS, Caractérisation électrique en mode pulsé, Architecture de mémoire haute densité, Configuration 1T1R, Procédé nanodamascène, Electronics, Microelectronics, Memory on Silicon, Oxide based resistive memories OxRRAM, Complementary resistive switching devices - CRS, Cmos beol, 3D monolithic integration, DC and pulsed electrical characterization, High density integration, 1T1R configuration, 621.397 072

الاتاحة: http://www.theses.fr/2018LYSEI037/document

المؤلفون: LABALETTE, Marina

المساهمون: STAR, ABES, INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon, Université de Sherbrooke (Québec, Canada), Dominique Drouin, Abdelkader Souifi

المصدر: Electronique. Université de Lyon; Université de Sherbrooke (Québec, Canada), 2018. Français. ⟨NNT : 2018LYSEI037⟩

مصطلحات موضوعية: Mémoires résistives OxRRAM, High density integration, Configuration 1T1R, Complementary resistive switching devices - CRS, Intégration monolithique BEOL - back end of line, Mémoires en microélectronique, 1T1R configuration, 3D monolithic integration, Microélectronique, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Memory on Silicon, Filière CMOS, Microelectronics, DC and pulsed electrical characterization, Procédé nanodamascène, Architecture de mémoire haute densité, Cmos beol, Caractérisation électrique en mode quasi statique - QS, Mémoires resistives complémentaires - CRS, Electronics, Oxide based resistive memories OxRRAM, Electronique, Caractérisation électrique en mode pulsé

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::fb617a478252d8bf70e56adee1d2d43e
https://theses.hal.science/tel-02067918

المؤلفون: Labalette, Marina

المساهمون: INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon, Université de Sherbrooke (Québec, Canada), Dominique Drouin, Abdelkader Souifi

المصدر: https://theses.hal.science/tel-02067918 ; Electronique. Université de Lyon; Université de Sherbrooke (Québec, Canada), 2018. Français. ⟨NNT : 2018LYSEI037⟩.

مصطلحات موضوعية: Electronics, Microelectronics, Memory on Silicon, Oxide based resistive memories OxRRAM, Complementary resistive switching devices - CRS, Cmos beol, 3D monolithic integration, DC and pulsed electrical characterization, High density integration, 1T1R configuration, Electronique, Microélectronique, Mémoires en microélectronique, Filière CMOS, Mémoires résistives OxRRAM, Mémoires resistives complémentaires - CRS, Intégration monolithique BEOL - back end of line, Caractérisation électrique en mode quasi statique - QS, Caractérisation électrique en mode pulsé, Architecture de mémoire haute densité, Configuration 1T1R, Procédé nanodamascène, [SPI.TRON]Engineering Sciences [physics]/Electronics

Relation: NNT: 2018LYSEI037

الاتاحة: https://theses.hal.science/tel-02067918
https://theses.hal.science/tel-02067918v1/document
https://theses.hal.science/tel-02067918v1/file/these.pdf

المؤلفون: Labalette, Marina

المساهمون: Lyon, Université de Sherbrooke (Québec, Canada), Drouin, Dominique, Souifi, Abdelkader

مصطلحات موضوعية: Electronique, Microélectronique, Mémoires en microélectronique, Filière CMOS, Mémoires résistives OxRRAM, Mémoires resistives complémentaires - CRS, Intégration monolithique BEOL - back end of line, Caractérisation électrique en mode quasi statique - QS, Caractérisation électrique en mode pulsé, Architecture de mémoire haute densité, Configuration 1T1R, Procédé nanodamascène, Electronics, Microelectronics, Memory on Silicon, Oxide based resistive memories OxRRAM, Complementary resistive switching devices - CRS, Cmos beol, 3D monolithic integration, DC and pulsed electrical characterization, High density integration, 1T1R configuration, 621.397 072

Relation: http://www.theses.fr/2018LYSEI037/document

الاتاحة: http://www.theses.fr/2018LYSEI037/document

المؤلفون: Josep Fontcuberta, Ignasi Fina, Florencio Sánchez, Mengdi Qian

المساهمون: Ministerio de Ciencia, Innovación y Universidades (España), Generalitat de Catalunya

المصدر: Digital.CSIC. Repositorio Institucional del CSIC
instname

مصطلحات موضوعية: Materials science, Complementary resistive switching, Binary number, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Biomaterials, Tunnel junction, General Materials Science, business.industry, Reading (computer), General Chemistry, 021001 nanoscience & nanotechnology, Ferroelectricity, 0104 chemical sciences, BaTiO3, Computer data storage, Electrode, Optoelectronics, Ferroelectric tunnel junctions, State (computer science), 0210 nano-technology, business, AND gate, Ferroelectric, Biotechnology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41f49fee41b47aee6e74feb3cdc3fa4a
https://doi.org/10.1002/smll.201805042

المؤلفون: Simone Balatti, David Gilmer, Stefano Ambrogio, Daniele Ielmini

مصطلحات موضوعية: Materials science, Oxide, chemistry.chemical_compound, Electrical resistivity and conductivity, Conductive filament, Electronic engineering, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, resistive-switching random access memory (RRAM), Local field, Leakage (electronics), Resistive touchscreen, ion migration, Complementary resistive switching (CRS), crossbar array, metal insulator transition, resistive switching, Electronic, Optical and Magnetic Materials, business.industry, Electrical engineering, Resistive random-access memory, chemistry, Resistive switching memory, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09eadd944062b6d7aaa55b995a7296a5
http://hdl.handle.net/11311/964756

المؤلفون: Stefano Ambrogio, Simone Balatti, Daniele Ielmini, David Gilmer

المصدر: ESSDERC

مصطلحات موضوعية: Risk, Resistive touchscreen, Engineering, Complementary Resistive Switching, business.industry, resistive switching, Electrical engineering, compact model, Resistive RAM, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Reliability and Quality, Electronic engineering, Crossbar switch, Safety, business, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6eb4b6fe4fdf4c41d30af8da1ce562f0
http://hdl.handle.net/11311/964743

المؤلفون: Chai, Yang, Wu, Yi, Takei, Kuniharu, Chen, Hong-Yu, Yu, Shimeng, Chan, Philip Ching Ho, Javey, Ali, Wong, H. S. Philip

مصطلحات موضوعية: Amorphous carbon (a-C), Carbon nanotube (CNT), Complementary resistive switching, Nonvolatile memory, Resistive random access memory (RRAM), Resistive switching memory

Relation: http://repository.ust.hk/ir/Record/1783.1-35015; IEEE Transactions on Electron Devices, v. 58, (11), November 2011, article number 6026917, p. 3933-3939; https://doi.org/10.1109/TED.2011.2164615; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0018-9383&rft.volume=58&rft.issue=11&rft.date=2011&rft.spage=3933&rft.aulast=Chai&rft.aufirst=Yang&rft.atitle=Nanoscale+Bipolar+and+Complementary+Resistive+Switching+Memory+Based+on+Amorphous+Carbon&rft.title=I.E.E.E.+transactions+on+electron+devices; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000296099400037; http://www.scopus.com/record/display.url?eid=2-s2.0-80054950125&origin=inward

الاتاحة: http://repository.ust.hk/ir/Record/1783.1-35015
https://doi.org/10.1109/TED.2011.2164615
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0018-9383&rft.volume=58&rft.issue=11&rft.date=2011&rft.spage=3933&rft.aulast=Chai&rft.aufirst=Yang&rft.atitle=Nanoscale+Bipolar+and+Complementary+Resistive+Switching+Memory+Based+on+Amorphous+Carbon&rft.title=I.E.E.E.+transactions+on+electron+devices
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000296099400037
http://www.scopus.com/record/display.url?eid=2-s2.0-80054950125&origin=inward

المؤلفون: 林吉欽

مصطلحات موضوعية: 互補式記憶體, 鈦, 銦錫氧化物, 界面反應, complementary resistive switching, Ti, ITO, TiOx

Relation: http://ir.lib.ntust.edu.tw/handle/987654321/50024; http://ir.lib.ntust.edu.tw/bitstream/987654321/50024/-1/index.html

الاتاحة: http://ir.lib.ntust.edu.tw/handle/987654321/50024
http://ir.lib.ntust.edu.tw/bitstream/987654321/50024/-1/index.html